Forming Array Of Gate Electrodes Patents (Class 438/587)
  • Patent number: 11075201
    Abstract: A fin field effect transistor (FinFET) having a tunable tensile strain and an embodiment method of tuning tensile strain in an integrated circuit are provided. The method includes forming a source/drain region on opposing sides of a gate region in a fin, forming spacers over the fin, the spacers adjacent to the source/drain regions, depositing a dielectric between the spacers; and performing an annealing process to contract the dielectric, the dielectric contraction deforming the spacers, the spacer deformation enlarging the gate region in the fin.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: July 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Chiang, Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu, Jiun-Jia Huang
  • Patent number: 11043572
    Abstract: Provided is a metal gate structure and related methods that include forming a first fin and a second fin on a substrate. In various embodiments, the first fin has a first gate region and the second fin has a second gate region. By way of example, a metal-gate line is formed over the first and second gate regions. In some embodiments, the metal-gate line extends from the first fin to the second fin, and the metal-gate line includes a sacrificial metal portion. In various examples, a line-cut process is performed to separate the metal-gate line into a first metal gate line and a second gate line. In some embodiments, the sacrificial metal portion prevents lateral etching of a dielectric layer during the line-cut process.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzung-Chi Lee, Tung-Heng Hsieh, Bao-Ru Young, Chia-Sheng Fan
  • Patent number: 11018019
    Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductive plug, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure. The protection layer is present between the conductive plug and the spacer.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Patent number: 10998444
    Abstract: A stacked FinFET mask-programmable read only memory (ROM) is provided. The stacked FinFET mask-programmable ROM includes a fin structure extending upward from an insulator layer. In accordance with the present application, the fin structure includes, from bottom to top, a lower programmable semiconductor fin portion having a first threshold voltage, an insulator fin portion, and an upper programmable semiconductor fin portion having a second threshold voltage. A lower gate structure contacts a sidewall of the lower programmable semiconductor fin portion, and an upper gate structure contacts a sidewall of the upper programmable semiconductor fin portion.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: May 4, 2021
    Assignee: International Business Machines Corporation
    Inventors: Alexander Reznicek, Karthik Balakrishnan, Tak Ning, Bahman Hekmatshoartabari
  • Patent number: 10867854
    Abstract: Double plug methods for tone inversion patterning are described. In an embodiment, a method may include receiving the substrate having a multi-line layer formed thereon. Such a method may also include forming a patterned recess in the multi-line layer, the recess defining an inversion pattern on the substrate. The methods may also include depositing a first plug layer in the patterned recess using a first deposition process. Additionally, the methods may include depositing a second plug layer in the patterned recess using a second deposition process, the second deposition process being different from the first deposition process.
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: December 15, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Angelique Raley
  • Patent number: 10861800
    Abstract: An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Chun Kuan, Chih-Teng Liao, Yi-Wei Chiu, Tzu-Chan Weng
  • Patent number: 10727223
    Abstract: A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.
    Type: Grant
    Filed: April 28, 2018
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Chih Yu, Chien-Mao Chen
  • Patent number: 10699962
    Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: June 30, 2020
    Assignee: Tessera, Inc.
    Inventors: Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
  • Patent number: 10679950
    Abstract: An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Chun Kuan, Chih-Teng Liao, Yi-Wei Chiu, Tzu-Chan Weng
  • Patent number: 10643998
    Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: May 5, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myoung Ho Kang, Gyeongseop Kim, Jeong Lim Kim, Jae Myoung Lee, Heung Suk Oh, Yeon Hwa Lim, Joong Won Jeon, Sung Min Kim
  • Patent number: 10607999
    Abstract: A method may include providing a substrate, the substrate comprising a substrate base and a patterning stack, disposed on the substrate base. The substrate may include first linear structures in the patterning stack, the first linear structures being elongated along a first direction; and second linear structures in the patterning stack, the second linear structures being elongated along a second direction, the second direction forming a non-zero angle with respect to the first direction. The method may also include selectively forming a set of sidewall spacers on one set of sidewalls of the second linear structures.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: March 31, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Sony Varghese, Naushad Variam
  • Patent number: 10515860
    Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and gate stacks over the substrate, wherein each of the gate stacks includes an electrode layer, a first hard mask (HM) layer over the electrode layer, and a second HM layer over the first HM layer. The method further includes depositing a dielectric layer over the substrate and the gate stacks and filling spaces between the gate stacks; and performing a first chemical mechanical planarization (CMP) process to partially remove the dielectric layer. The method further includes performing an etching process to remove the second HM layer and to partially remove the dielectric layer, thereby exposing the first HM layer. The method further includes performing a second CMP process to at least partially remove the first HM layer.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Jen Shen, Ying-Ho Chen, Yung-Cheng Lu
  • Patent number: 10475789
    Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: November 12, 2019
    Assignee: Samsung Electroncis Co., Ltd.
    Inventors: Myoung Ho Kang, Gyeongseop Kim, Jeong Lim Kim, Jae Myoung Lee, Heung Suk Oh, Yeon Hwa Lim, Joong Won Jeon, Sung Min Kim
  • Patent number: 10431466
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: October 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Steven C. H. Hung
  • Patent number: 10411026
    Abstract: The present disclosure includes methods of forming, and semiconductor structures for, integrated computing structures formed on silicon. An example method includes forming, on a silicon semiconductor material, an integrated computing structure by forming a number of complementary metal-oxide-semiconductor (CMOS) devices including a plurality of materials, forming a non-volatile memory (NVM) device including a plurality of materials, and forming the plurality of materials of the CMOS devices and the plurality of materials of the NVM device from a plurality of same materials shared at a corresponding plurality of positions within the structure. A particular function is provided by each of the plurality of same materials at the corresponding plurality of positions.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: September 10, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Arup Bhattacharyya
  • Patent number: 10276391
    Abstract: Structures for a field-effect transistor and methods of forming a structure for field-effect transistor. A gate structure includes a work function metal layer, a first conductor layer, and a second conductor layer arranged over the work function metal layer. The second conductor layer has a sidewall and a top surface, and the first conductor layer has a first section arranged between the second conductor layer and the work function metal layer and a second section arranged adjacent to a first portion of the sidewall of the second conductor layer. A dielectric cap is arranged on the gate structure. The dielectric cap has a first section arranged over the top surface of the second conductor layer and a second section arranged adjacent to a second portion of the sidewall of the second conductor layer.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: April 30, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Hui Zang, Ruilong Xie, Laertis Economikos
  • Patent number: 10276658
    Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: April 30, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
  • Patent number: 10157797
    Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: December 18, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
  • Patent number: 10157796
    Abstract: The disclosure relates to methods including: forming a soft mask; forming a first marking trench within a portion of the soft mask by selectively removing a portion of the soft mask at a first location, over one of a pair of gate trenches; forming an insulative liner on the soft mask and within the first marking trench; forming an anti-reflective film on the insulative liner and within the first marking trench; selectively removing the anti-reflective film and the insulative liner at a second location to expose a portion of the soft mask positioned over the other one of the pair of gate trenches; forming a second marking trench by removing another portion of the soft mask at the second location; and removing a portion of the soft mask at the first and second marking trenches to expose a lower surface of each of the pair of gate trenches.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: December 18, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Laertis Economikos, Chanro Park, Ruilong Xie, Pei Liu
  • Patent number: 10090164
    Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: October 2, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ekmini A. De Silva, Isabel C. Estrada-Raygoza, Yann A. M. Mignot, Indira P. V. Seshadri, Yongan Xu
  • Patent number: 10014221
    Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: July 3, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
  • Patent number: 9837427
    Abstract: Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the time of forming sidewalls having two kinds of different widths on a substrate. A sidewall-shaped silicon oxide film is formed over each sidewall of a gate electrode of a low breakdown voltage MISFET and a pattern including a control gate electrode and a memory gate electrode. Then, a silicon oxide film beside the gate electrode is removed, and a silicon oxide film is formed on a semiconductor substrate, and then etchback is performed. Accordingly, a sidewall, formed of a silicon nitride film and the silicon oxide film, is formed beside the gate electrode, and a sidewall, formed of the silicon nitride film and the silicon oxide films, is formed beside the pattern.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: December 5, 2017
    Assignee: Renesas Electronics Corporation
    Inventor: Masaaki Shinohara
  • Patent number: 9728646
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile by the thermal hydrogen treatment.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: August 8, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Shiu-Ko Jangjian, Cheng-Wei Chen, Ting-Chun Wang
  • Patent number: 9595475
    Abstract: A method for fabricating a semiconductor device having a multi-stage fin profile includes providing a substrate and forming a first spacer having a first spacer width over the substrate. The first spacer masks a first portion of the substrate during a first etch process. By way of example, the first etch process is performed on the substrate to form a first-stage fin region, where a width of the first-stage fin region is substantially equal to about the first spacer width. A second spacer having a second spacer width is formed over the substrate, where the second spacer and the first-stage fin region mask a second portion of the substrate during a second etch process. In some examples, the second etch process is performed on the substrate to form a second-stage fin region, where a width of the second-stage fin region is greater than the width of the first-stage fin region.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: March 14, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Jhon Jhy Liaw
  • Patent number: 9515070
    Abstract: A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: December 6, 2016
    Assignee: International Business Machines Corporation
    Inventors: David V. Horak, Effendi Leobandung, Stefan Schmitz, Junli Wang
  • Patent number: 9484458
    Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: November 1, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Wook Lee, Myeong-Cheol Kim, Sang-Min Lee, Young-Ju Park, Hyung-Yong Kim, Myung-Hoon Jung
  • Patent number: 9466501
    Abstract: Provided is a method of planarizing a semiconductor device. A dielectric layer is formed over a substrate. A plurality of openings is formed in the dielectric layer. The openings have varying distribution densities. The openings are filled with a metal material. A first chemical-mechanical-polishing (CMP) process is performed to remove portions of the metal material over the dielectric layer. Thereafter, a sacrificial layer is formed over the dielectric layer and the metal material. The sacrificial layer has a planar surface. The sacrificial layer is formed through one of: a spin-on process or a flowable chemical vapor deposition (FCVD) process. A second CMP process is then performed to remove the sacrificial layer and portions of the dielectric layer and the metal material therebelow. The second CMP process uses a slurry configured to have a substantially similar polishing selectivity between the sacrificial layer, the dielectric layer, and the metal material.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: October 11, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Hsien Lu, Chang-Sheng Lin
  • Patent number: 9437637
    Abstract: A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: September 6, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Atsushi Kanome, Nobutaka Ukigaya, Koji Hara, Satoshi Yoshizaki, Masahiko Kondo
  • Patent number: 9343412
    Abstract: A method of forming a MOSFET structure is provided. In the method, an epitaxial layer is formed. A cap layer is formed above the epitaxial layer. A first trench is formed above the epitaxial layer. A protection layer is deposited within the first trench. The protection layer is a material selected from the group consisting of germanium and silicon-germanium.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: May 17, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ching-Feng Fu, Yu-Chan Yen, Chih-Hsin Ko, Chun-Hung Lee, Huan-Just Lin, Hui-Cheng Chang
  • Patent number: 9293568
    Abstract: Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may include forming a masking layer above the fin, and the method may involve removing a first portion of the masking layer. The method may include decreasing the first width of the fin while maintaining the initial height.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: March 22, 2016
    Assignee: Applied Materials, Inc.
    Inventor: Jungmin Ko
  • Patent number: 9263442
    Abstract: Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement gate structures.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: February 16, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Brent A. Anderson, Edward J. Nowak
  • Patent number: 9209308
    Abstract: There is provided a thin film transistor, comprising a substrate (1) and a gate layer (3), a gate insulating layer (4), an active layer (5), an electrode metal layer (8) and a passivation layer (9) which are formed on the substrate (1) in sequence; the electrode metal layer (8) comprises a source electrode (8a) and a drain electrode (8b), which are separated from each other with a channel region being defined therebetween; between the gate layer (3) and the substrate (1), there is formed a first transparent conductive layer (2); between the active layer (5) and the electrode metal layer (8), there is formed a second transparent conductive layer (7). The transparent conductive layers (2, 7) are added so that adhesive force between the gate metal layer (3) and the substrate (1) is enhanced, diffusion of the electrode metal to the active layer (5) is prevented.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: December 8, 2015
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xuehui Zhang, Xiang Liu, Jainshe Xue
  • Patent number: 9093470
    Abstract: Producing a vertical transistor includes providing a conductive gate structure having a reentrant profile on a substrate. A conformal dielectric material layer is formed on the conductive gate structure. A conformal semiconductor material layer is formed on the dielectric material layer, over the conductive gate structure. An electrode is formed located over the conductive gate structure and in contact with a first portion of the semiconductor layer and another electrode is formed vertically separated from the electrode and located in contact with a second portion of the semiconductor layer by printing an inhibitor that wicks along the reentrant profile of the conductive gate structure and depositing a conductive inorganic thin film using an atomic layer deposition process where the inhibitor is absent to form a channel in the semiconductor layer along the reentrant profile between the electrodes by inhibiting deposition of conductive material between the electrodes with the wicked inhibitor.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: July 28, 2015
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Shelby Forrester Nelson, Carolyn Rae Ellinger
  • Patent number: 9087870
    Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent fins extend from a bulk semiconductor substrate. A silicon layer is formed overlying the recessed eHARP oxide fill. The silicon layer is converted to a thermal oxide layer to further fill the STI trench with oxide material.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: July 21, 2015
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Wei Hua Tong, Huang Liu, HongLiang Shen, Jin Ping Liu, Seung Kim
  • Publication number: 20150145023
    Abstract: To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a high-k/metal configuration. The high-k insulating film arranged between the control gate electrode portion and the memory gate electrode portion relaxes an electric field intensity at the end portion (corner portion) of the memory gate electrode portion on the side of the control gate electrode portion. This results in reduction in uneven distribution of charges in a charge accumulation portion (silicon nitride film) and improvement in erase accuracy.
    Type: Application
    Filed: November 20, 2014
    Publication date: May 28, 2015
    Inventors: Tsuyoshi Arigane, Daisuke Okada, Digh Hisamoto
  • Publication number: 20150137250
    Abstract: The present invention further provides a string select line (SSL) of a three-dimensional memory array, including: a dielectric substrate; an SSL structure disposed on the dielectric substrate, wherein the SSL structure includes a plurality of dielectric layers and a plurality of first conductive layers, the dielectric layers and the first conductive layers stacked alternatively; a second conductive layer covering sidewalls and a top portion of the SSL structure; and an oxide layer disposed between the first conductive layers and the second conductive layer, and contacting with the first conductive layers and the second conductive layer.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: MACRONIX International Co., Ltd.
    Inventor: Erh-Kun Lai
  • Publication number: 20150140742
    Abstract: Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The walls are spaced from one another by trenches that extend primarily along the first direction. Steps are formed along bottoms of the trenches. Gatelines are formed on the steps and along lower regions of the walls. After the gatelines are formed, the walls are patterned into spaced-apart pillars that have bottom regions below the gatelines. In some embodiments the gated devices may be transistors or thyristors.
    Type: Application
    Filed: January 21, 2015
    Publication date: May 21, 2015
    Inventors: Carlo Pozzi, Marcello Mariani, Gianpietro Carnevale
  • Patent number: 9034698
    Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: May 19, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshihisa Ozu, Shota Yoshimura, Hiroto Ohtake, Kosuke Kariu, Takashi Tsukamoto
  • Patent number: 9034710
    Abstract: A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.
    Type: Grant
    Filed: January 7, 2014
    Date of Patent: May 19, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Gurtej S. Sandhu
  • Publication number: 20150129961
    Abstract: A semiconductor device includes a plurality of gates formed upon a semiconductor substrate that includes a plurality of outer active areas (e.g. CMOS/PMOS areas, source/drain regions, etc.) and one or more inner active areas. An isolator is formed upon one or more inner gates associated with the one or more inner active areas. A contact bar electrically connects the outer active areas and/or outer gates and is formed upon the isolator. The isolator electrically insulates the contact bar from the one or more inner active areas and/or the one or more inner gates.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 14, 2015
    Applicants: STMicroelectronics, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wai-Kin Li, Chieh-Yu Lin, Yannick Daurelle
  • Publication number: 20150132936
    Abstract: A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on sidewalls of the open parts, forming conductive layer patterns in the open parts, and causing the conductive layer patterns and the sacrificial spacers to reach each other, and defining air gaps on the sidewalls of the open parts.
    Type: Application
    Filed: January 23, 2015
    Publication date: May 14, 2015
    Inventors: Il-Cheol RHO, Jong-Min LEE
  • Patent number: 9024288
    Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: May 5, 2015
    Assignee: BOE Technology Group Co., Ltd.
    Inventor: Tuo Sun
  • Patent number: 9023724
    Abstract: A method of manufacturing a semiconductor memory device comprises forming a plurality of gate lines on a semiconductor substrate, forming an insulating layer on the gate lines, and performing a cleaning process using a surfactant-free cleaning solution having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: May 5, 2015
    Assignee: SK Hynix Inc.
    Inventors: Duk Eui Lee, Seung Cheol Lee
  • Patent number: 9018710
    Abstract: A semiconductor device includes a substrate including first and second regions. A first gate stack structure containing a first effective work function adjust species is formed over the first region and a second gate stack structure containing a second effective work function adjust species is formed over the second region. A channel region is formed under the first gate stack structure and contains a threshold voltage adjust species.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: April 28, 2015
    Assignee: SK Hynix Inc.
    Inventors: Seung-Mi Lee, Yun-Hyuck Ji
  • Publication number: 20150108561
    Abstract: Provided is a semiconductor device and a method of fabricating the same. The method may include forming trenches in a substrate and lower gate patterns on the substrate between the trenches, forming sacrificial patterns filling the trenches, forming a porous insulating layer on the lower gate patterns to cover top surfaces of the sacrificial patterns, removing the sacrificial patterns through pores of the porous insulating layer to form air gaps surrounded by the trenches and the porous insulating layer, and forming a liner insulating layer on inner surfaces of the trenches through the pores of the porous insulating layer.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 23, 2015
    Inventors: HyoJoong Kim, Songha Oh, Changgoo Jung
  • Patent number: 9012270
    Abstract: Methods for forming a DSA pre-patterned semiconductor transistor layout and the resulting devices are disclosed. Embodiments may include forming a pre-patterned transistor layout by directed self-assembly (DSA), forming a metal layer over the DSA pre-patterned transistor layout, including: forming a plurality of horizontal metal lines; and forming a plurality of vertical metal segments discontinuous from and between adjacent horizontal metal lines; and forming one or more bridging dots each connecting one of the plurality of horizontal metal lines to one of the plurality of vertical metal segments, wherein locations of the bridging dots determine logic functions of resulting transistor cells.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 21, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ji Xu, Vito Dai
  • Patent number: 9012318
    Abstract: Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: April 21, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Jerome A. Imonigie, Prashant Raghu
  • Patent number: 9012286
    Abstract: Disclosed herein are various methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate to define at least one fin (or fins) for the device, prior to forming a gate structure above the fin (or fins), performing a first epitaxial growth process to grow a first semiconductor material on exposed portions of the fin (or fins) and forming the gate structure above the first semiconductor material on the fin (or fins).
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: April 21, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventor: Min-Hwa Chi
  • Publication number: 20150104935
    Abstract: Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain.
    Type: Application
    Filed: December 17, 2014
    Publication date: April 16, 2015
    Applicant: INTEL CORPORATION
    Inventor: MARK T. BOHR
  • Publication number: 20150104934
    Abstract: A semiconductor device includes a substrate including an active region, an insulation layer formed over the substrate, a plurality of openings formed in the insulation layer, a plurality of contact plugs filling the plurality of openings, a silicide layer formed over the substrate and between the substrate and each contact plug of the contact plugs in order to cover a bottom of each contact plug. The semiconductor device may decrease contact resistance by forming a silicide layer before the formation of openings regardless of the linewidth and aspect ratio of the openings. Also, because it does not have to consider step coverage based on the aspect ratio of openings, there is no limitation in the method of depositing a metal layer. Therefore, productivity may be improved.
    Type: Application
    Filed: December 16, 2014
    Publication date: April 16, 2015
    Inventor: Hyung-Kyun KIM