Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Abstract: It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.

Abstract: A method coats a substrate with an aluminum-doped zinc oxide. The method includes generating a nucleation coating between 5 nm and 400 nm thick and having zinc oxide or doped zinc oxide, in particular aluminum-doped zinc oxide, on a surface of a substrate by atomizing a solid target. A quasi-epitaxially propagating top coating is generated and contains an aluminum-doped zinc oxide on the nucleation coating and the top coating is wet chemically etched.

Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Abstract: The present invention relates to a method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles. Because of its own advantages in cost and transparency, Al-doped ZnO (AZO) transparent conductive film is becoming the most commonly used transparent conducting oxide (TCO) replacement for solar cells. In this invention, a colloidal chemical means is adopted for enabling a chemical reaction between metal salts, water, and polyhydric alcohols at a room-temperature environment, and thereby, a process for fabricating spherical AZO nanoparticles in a diameter ranged between 100 nm to 400 nm according to different parameter configurations can be achieved while controlling the actual Al/Zn ratio to be ranged between 0.1% to 3%. In addition, a dip coating means is adopted for densely distributing the spherical AZO nanoparticles on a substrate into a monolayer close-packed structure.

Abstract: The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.

Abstract: A via forming method that includes forming via-holes in a substrate is provided. The method includes putting the substrate, having the via-holes, in a first solution to fill the via-holes with the first solution. Metal particles are sunk into the via-holes by supplying a second solution containing the metal particles to the first solution. A first curing process of heat-treating the substrate is performed so as to form vias in the via-holes. A multi-chip package that includes the substrate having the vias is also provided.

Abstract: Disclosed is an optical device including an optical member and a contact layer stacked on at least one of top and bottom surfaces of the optical member. The contact layer has at least one transparent conducting oxynitride (TCON) layer. The TCON consists of at least one of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and palladium (Pd).

Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.

Abstract: Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.

Abstract: The invention relates to a substrate comprising at least one scattering film made of a transparent conductive oxide (TCO) and to a process for manufacturing such a substrate. It also relates to a solar cell comprising such a substrate. The substrate according to the invention comprises a layer of spherical particles made of a material chosen from dielectric and transparent conductive oxides, the layer being coated with a TCO film and the diameters of said spherical particles belonging to at least two populations of different diameters. The invention is applicable in particular to solar cells.

Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.

Abstract: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.

Abstract: To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion of a connecting wiring on an active matrix substrate is electrically connected to an FPC by an anisotropic conductive film. The connecting wiring is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film, a side surface of the connecting wiring is covered with a protecting film made of an insulating material, thereby exposure to air of the metallic film can be avoided.

Abstract: A method for depositing at least one thin-film electrode onto a transparent conductive oxide film is provided. At first, the transparent conductive oxide film is deposited onto a substrate to be processed. Then, the substrate and the transparent conductive oxide film are subjected to a processing environment containing a processing gas acting as a donor material or an acceptor material with respect to the transparent conductive oxide film. The at least one thin-film electrode is deposited onto at least portions of the transparent conductive oxide film. A partial pressure of the processing gas acting as the donor material or the acceptor material with respect to the transparent conductive oxide film is varied while depositing the at least one thin-film electrode onto at least portions of the transparent conductive oxide film. Thus, a modified transparent conductive oxide film having reduced interface resistance and bulk resistance can be obtained.

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract: The present invention provides: a display panel substrate that has an excellent boundary surface adhesion between an insulating film and electrodes formed on the substrate, that particularly requires a configuration in which the lower electrode, the insulating film, and an upper electrode are layered on the substrate in this order from the substrate side, and that includes an auxiliary metal wiring for reducing the wiring resistance, where detachment between the lower electrode and the insulating film is sufficiently suppressed when the lower electrode must be made of ITO; a method for manufacturing such a display panel substrate; and a display panel and a display device including such a display panel substrate. A display panel substrate of the present invention has a lower electrode, an insulating film, and an upper electrode layered thereon in this order from the substrate side.

Abstract: The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.

Abstract: Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.

Abstract: An anode for an organic light emitting device which introduces a metal oxide to improve flows of charges, and an organic light emitting device using the anode. The anode for the organic light emitting device has excellent charge injection characteristics, thereby improving power consumption of the organic light emitting device.

Abstract: The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract: A manufacturing method of thin film transistor substrate of a liquid crystal display panel includes following steps. A substrate is provided. Then, a transparent conducting layer and an opaque conducting layer are formed on the substrate. Thereafter, the transparent conducting layer and the opaque conducting layer are patterned by a gray-tone mask to form at least one storage capacitor electrode. Next, a first insulating layer is formed on the storage capacitor electrode. Then, at least one gate electrode is formed on the substrate. Subsequently, at least one gate insulating layer, a patterned semiconductor layer, a source electrode, a drain electrode, and a second insulating layer are formed sequentially on the gate electrode. Moreover, at least one pixel electrode is formed on the first insulating layer and the second insulating layer. A part of the pixel electrode overlaps a part of the storage capacitor electrode to form a storage capacitor.

Abstract: A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.

Abstract: A method for controlling surface morphology of a transparent conductive oxide film (TCO) is provided. A substrate is provided as a basis for forming a solar cell. Onto the substrate, a seed layer is deposited. Then, the method includes depositing the transparent conductive oxide film (TCO) above the seed layer. The seed layer is adapted to control the surface morphology of the transparent conductive oxide film. The surface of the transparent conductive oxide film is etched in order to provide a front contact of the solar cell.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.

Abstract: Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain molybdenum are deposited onto a substrate and subsequently processed to form molybdenum-doped indium oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas, silane (SiH4) gas, diborane (B2H6) and ethylene (C2H4) gas, wherein the ethylene (C2H4) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.

Abstract: To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material.

Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber.

Abstract: Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.

Abstract: Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.

Abstract: A photovoltaic cell comprising a selectively patterned, transparent, conductive coating (TCC) on a sunward surface. The selectively patterned TCC is contiguous with at least some highly conductive gridlines on the sunward surface. A portion of the sunward surface of the semiconductor wafer is not covered by either the gridlines or the TCC. Also disclosed are methods of manufacturing a photovoltaic cell comprising a selectively patterned, transparent, conductive coating (TCC) on a sunward surface. The methods include the step of modeling the optical and electrical properties of the semiconductor, the gridlines, and the TCC to determine a pattern for the TCC that results in a low relative power loss for the photovoltaic cell.

Abstract: An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In2O3 film, and the thickness of the indium oxide layer is about 40 nm, and the depth of the nanowire is less than 10 nm.

Abstract: A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence state in the molybdenum oxide. The nickel component exists in a mixed valence state in the nickel oxide. The composite may be utilized in various electronic devices, including optoelectronic devices. In particular, the composite may be utilized as a transparent conductive electrode. As compared to conventional transparent conduct oxides such as indium tin oxide, the composite exhibits superior properties, including a higher work function.

Abstract: A structure and a method. The method includes: forming a dielectric layer on a substrate; forming electrically conductive first and second wires in the dielectric layer, top surfaces of the first and second wires coplanar with a top surface of the dielectric layer; and either (i) forming an electrically conductive third wire on the top surface of the dielectric layer, and over the top surfaces of the first and second wires, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy or (ii) forming an electrically conductive third wire between the top surface of the dielectric layer and the substrate, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy.

Abstract: A method for generating an electrode layer pattern in an organic functional device (101; 201) comprising a first transparent electrode layer (103; 203), a second electrode layer (104; 204) and an organic functional layer (102; 202) sandwiched between said first and second electrode layers (103, 104; 203, 204). The method comprises the steps of arranging (601) a laser (704; 804) to irradiate said organic functional device (701; 801) through said first transparent electrode layer (103; 203), selecting (602) a set of laser parameters in order to enable said laser (704; 804) to locally modify an electric conductivity of said second electrode layer (104; 204), and locally modifying, by said laser (704; 804) in accordance with said set of laser parameters, the electric conductivity of said second electrode layer (104; 204), thereby generating said electrode layer pattern.

Abstract: An embodiment of the invention provides a chip package, which includes a substrate having an upper surface and a lower surface, a chip disposed in or on the substrate, a pad disposed in or on the substrate and electrically connected to the chip, a hole extending from the lower surface toward the upper surface, exposing the pad, wherein a lower opening of the hole near the lower surface has a width that is shorter than that of an upper opening of the hole near the upper surface, an insulating layer located overlying a sidewall of the hole, and a conducting layer located overlying the insulating layer and electrically connected to the pad.

Abstract: A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The polished surface of the silicon carbide substrate is then masked to define a predetermined location for at least one via that is opposite the device metal contact and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, the via is metallized.

Abstract: Disclosed is a semiconductor electrode which comprises a transparent electrode that is arranged on the surface of a light-transmitting substrate. The transparent electrode is provided with a metal oxide layer on a surface that is on the reverse side of a surface that is in contact with the substrate. The metal oxide layer contains fine silicon particles, which absorb a specific wavelength (11), and fine metal oxide particles. The fine silicon particles are arranged between the fine metal oxide particles.

Abstract: A method for depositing at least one thin-film electrode onto a transparent conductive oxide film is provided. At first, the transparent conductive oxide film is deposited onto a substrate to be processed. Then, the substrate and the transparent conductive oxide film are subjected to a processing environment containing a processing gas acting as a donor material or an acceptor material with respect to the transparent conductive oxide film. The at least one thin-film electrode is deposited onto at least portions of the transparent conductive oxide film. A partial pressure of the processing gas acting as the donor material or the acceptor material with respect to the transparent conductive oxide film is varied while depositing the at least one thin-film electrode onto at least portions of the transparent conductive oxide film. Thus, a modified transparent conductive oxide film having reduced interface resistance and bulk resistance can be obtained.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.

Abstract: An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed.

Abstract: One object of the present invention is to provide a transparent electrode substrate with an ITO film formed thereon, used for example as the transparent electrode plate in a dye sensitized solar cell, for which the electrical resistance does not increase even when exposed to high temperatures of 300° C. or higher. In order to achieve the object, the present invention provides a substrate for a transparent electrode, wherein two or more layers of different transparent conductive films are formed on a transparent substrate, and an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film.

Abstract: A photovoltaic module may contain a front contact configured to transfer electrical current from the module.

Abstract: An electrode for a photoelectric conversion device, a method of preparing the same and a photoelectric conversion device including the same. In one embodiment, an electrode for a photoelectric conversion device includes a transparent conductive layer, a metal electrode layer and an intermediate electrode layer. The transparent conductive layer is formed on a substrate. The metal electrode layer is disposed on the transparent conductive layer to have a pattern. The intermediate electrode layer is interposed between the transparent conductive layer and the metal electrode layer to join the transparent conductive layer and the metal electrode layer. Accordingly, the photoelectric conversion device is enhanced.

Abstract: Methods of depositing a TCO layer on a substrate and precursor for solar cells are described.

Abstract: A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.