Abstract: The present invention pertains to a physical tempered glass and a solar panel utilizing the same. The physical tempered glass of the present invention has a thickness of about 0.5 mm to about 2.8 mm, a compressive strength of about 120 MPa to about 300 MPa, a bending strength of about 120 MPa to about 300 MPa and a tensile strength of about 90 MPa to about 180 MPa. The present invention also relates to the preparation of the physical tempered glass and the solar panel.

Abstract: The invention provides a color filter producing method that is based on dry etching and makes it possible to produce a color filter which has fine and rectangular pixels and is excellent in flatness, and color filters produced by the method. The method is a color filter producing method of forming a first colorant-containing layer on a support, removing the first colorant-containing layer corresponding to a region where a second colorant-containing layer is to be formed by dry etching, forming the second colorant-containing layer so as to be embedded into the layer-removed region, removing the first and second colorant-containing layers corresponding to a region where a third colorant-containing layer is to be formed by dry etching, forming the third colorant-containing layer so as to be embedded into the layer-removed region, and removing the colorant-containing layers laminated on other colorant-containing layers.

Abstract: An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.

Abstract: A method for producing an infrared light detector (1) has the steps of: providing a plurality of connection pins (11, 12), which are kept parallel to one another and arranged with one of the longitudinal ends (17, 18) thereof in a horizontal plane, and a printed circuit board (6) with a planar underside (8), in which a recess (15, 16) of the same form in each case is provided for each of the connection pins (11, 12); filling the recesses (15, 16) with a solder paste, so that in each of the recesses (15, 16) there is a solder paste body (21) with the same amount of solder paste; positioning the printed circuit board (6) over the connection pins (11, 12), so that each of the connection pins (11, 12) extends with its longitudinal end (17, 18) in the recess (15, 16) assigned to it and dips in the solder paste body (21) located in the respective recess (15, 16); liquefying the solder paste bodies (21), so that electrically conducting connections are formed between the connection pins (11, 12) and the solder paste

Abstract: The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.

Abstract: Certain embodiments provide a solid-state imaging device including a curved guide having a curved portion of a concave shape, a sensor substrate, an adhesive, a transparent substrate, and an external electrode. The sensor substrate includes a sensor section, for receiving light collected by a lens and generating charges in accordance with a light receiving quantity, on a surface, has the curved guide fixed on a back surface, and has a region including the sensor section curved downward to a convex shape along the curved portion of the curved guide. The adhesive is formed at a periphery of the sensor section. The transparent substrate is a plate-like substrate fixed on the sensor substrate by the adhesive. The external electrode is formed on the back surface of the sensor substrate, and is electrically connected to the sensor section through a through-electrode provided on the sensor substrate.

Abstract: An optical system has a first relief-type diffraction grating fiducial, or alignment mark, on a transparent surface of a first optical wafer or plate, the grating arranged to deflect light away from an optical path and appear black. The first wafer may have lenses. The first fiducial is aligned to another fiducial on a second wafer having further optical devices as part of system assembly; or the fiducials are aligned to alignment marks or fiducials on an underlying photosensor. Once the optical devices are aligned and the wafers bonded, they are diced to provide aligned optical structures for a completed camera system. Alternatively, an optical wafer is made by aligning a second relief-type diffraction grating fiducial on a first master to a first relief-type diffraction grating fiducial on an optical wafer preform, pressing the first master into a blob to form optical shapes and adhere the blob to the optical wafer preform.

Abstract: A solar module includes a substrate member, a plurality of photovoltaic strips arranged in an array configuration overlying the substrate member, and a concentrator structure comprising extruded glass material operably coupled to the plurality of photovoltaic strips. A plurality of elongated convex regions are configured within the concentrator structure. The plurality of elongated convex regions are respectively coupled to the plurality of photovoltaic strips. Each of the plurality of elongated convex regions includes a length and a convex surface region characterized by a radius of curvature, each of the elongated convex regions being configured to have a magnification ranging from about 1.5 to about 5. A coating material rendering the glass self-cleaning overlies the plurality of elongated convex regions.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a plurality of vertical transfer channel regions and a plurality of photoelectric conversion regions arranged in a matrix; a plurality of vertical transfer electrodes, each constructed of a gate electrode and a first metal light-shielding film, formed via a gate insulating film; a transparent insulating film formed in gaps existing between the vertical transfer electrodes above the vertical transfer channel regions; and a second metal light-shielding film formed via a first interlayer insulating film to cover at least the vertical transfer channel regions.

Abstract: Disclosed herein is a stacked chip package including an image sensor including a recess formed on a surface thereof, and a digital signal processor chip that is positioned within the recess. Also disclosed herein is a method of fabricating a stacked chip package including the steps of forming a recess on a surface of an image sensor and positioning a digital signal processor in the recess of the image sensor.

Abstract: A solar cell module includes lower and upper substrates that are spaced apart from each other, a plurality of spaced apart solar cells, a plurality of gratings, and a light-transmissive encapsulant disposed between the lower and upper substrates to encapsulate the solar cells and the gratings. Each of the gratings has a grating center, and four reflecting regions formed around the grating center. Each of the reflecting regions has a light entrance face that has a plurality of valleys and peaks. The valleys and peaks alternate with each other along a direction from the grating center to a corresponding one of the corners of a corresponding one of the four adjacent solar cells.

Abstract: The objective of this invention is to provide a type of photodiode and the method of manufacturing the photodiode characterized by the fact that it has a higher photoelectric conversion efficiency (sensitivity) than that in the prior art. PIN photodiode 100 has a p-type silicon substrate, p-type silicon layer 112, n-type silicon layer 114 formed on p-type silicon layer 112 and having a junction plane with silicon layer 112, n-type low-resistance silicon region 116 that is formed to a prescribed depth from the surface of silicon layer 114 and has an impurity concentration higher than that of silicon layer 114, silicon oxide film 120 formed on silicon region 116, and silicon nitride film 122 formed on silicon oxide film 120.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.

Abstract: A method of fabricating a III-V solar cell package includes providing a solar cell having a first side and an opposite second side, forming a first insulating layer on the first side of the solar cell, forming a second insulating layer on the second side of the solar cell, forming a light-transmitting layer on the first insulating layer, forming a protection layer on the second insulating layer, and laminating the light-transmitting layer and the protection layer so as to attach the first insulating layer to the light-transmitting layer and the solar cell and to attach the second insulating layer to the protection layer and the solar cell, thereby forming a flexible solar cell package since the insulating layers, the light-transmitting layer and the protection layer are all flexible.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device mounted on a substrate; a bonding wire that electrically connects a pad formed on the solid-state imaging device to a lead island formed on the substrate; a frame member that has a frame-like shape and surrounds side portions of the solid-state imaging device; and a light-transmissive optical member so accommodated in the frame member that the optical member faces an imaging surface of the solid-state imaging device, wherein the frame member has a leg portion extending from the side where the optical member is present toward the imaging surface, and the frame member is integrally fixed to the solid-state imaging device with an end of the bonding wire that is connected to the pad covered with the leg portion.

Abstract: In a radiation detector, a scintillator converts radiations penetrating through a sensor panel to light, and the light is detected by a photosensor in the sensor panel. A reflector layer including a specular reflection and retro-reflection layers is provided on the opposite side of the scintillator to the sensor panel. The specular reflection layer specularly reflects short-wavelength components of the light from the scintillator, and lets long-wavelength components of the light pass through it. The photosensor can detect the short-wavelength components efficiently at positions close to their origins because they are guided along columnar crystals of the scintillator. Since long-wavelength components are less refrangible and tend to deviate from their origins, causing crosstalk, the retro-reflection layer retroreflects the long-wavelength components toward the sensor panel, so that the long-wavelength components also reach the sensor panel at positions close to their origins.

Abstract: A coloured photovoltaic module and method for its production, where the module includes: a photovoltaic cell; and an appearance modifying film, encapsulant or glazing; where the appearance modifying film, encapsulant or glazing includes: a light-control film; graphic material; a phosphor; a dichroic film; nano-particles; micro-dots; metal flakes; paint; an additive material for 3-D printing, Selective Laser Augmentation (SLA) or Selective Laser Sintering (SLS); or any combination thereof.

Abstract: Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate which includes a first surface and a second surface opposite to the first surface, a pixel which is provided in the semiconductor substrate and which photoelectrically converts light emitted via a lens on the second surface, a support substrate which is provided on a first insulating layer covering an element on the first surface and which includes a trench, and a first device which is provided on the first insulating layer and which is accommodated in the trench of the support substrate.

Abstract: The invention relates to a solar concentrator comprising a solid body consisting of a transparent material that has a light coupling surface and a light decoupling surface, the solid body having a light guide part that tapers towards the light decoupling surface, being located between the light coupling surface and the light decoupling surface and being delimited by a light guide surface between the light coupling surface and the light decoupling surface, the light guide surface merging into the light decoupling surface with a constant first derivation. The invention also relates to a method for the production of a solar concentrator, wherein the transparent material is precision-moulded between the moulds.

Abstract: In a method for manufacturing a semiconductor device according to an embodiment, a trench is formed in an outer peripheral portion of a chip region on a bonding surface of a support substrate, and a semiconductor substrate having a chip ring in the outer peripheral portions of the chip regions on an inside of a dicing line respectively and the support substrate are bonded to position the trench from above the chip ring to the inside of the dicing line. In the method for manufacturing a semiconductor device, furthermore, the semiconductor substrate and the support substrate which are bonded to each other are subjected to dicing along the dicing line.

Abstract: A camera module package is disclosed. The camera module package is capable of preventing defects caused by foreign bodies and enhancing product reliability by reducing the time consumed in a packaging process for manufacturing a camera module, and of reducing the size of a package and manufacturing costs by excluding the use of gold wires.

Abstract: A camera module includes a sensor chip having a backside surface and a main surface including a sensor forming region and a sensor peripheral region surrounding the sensor forming region, in which a light receiving portion is disposed in the sensor forming region; a lens chip having a non-lens forming surface and a lens forming surface including a lens forming region and a lens peripheral region surrounding the lens forming region, in which a lens portion disposed in the lens forming region; a spacer portion for bonding the sensor peripheral region to the lens peripheral region with a specific space in between so that the light receiving portion faces the lens portion; and a cover including an opening portion for passing light from outside toward the lens portion and the light receiving portion.

Abstract: An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component.

Abstract: The present invention discloses a method for reducing the tilt of a transparent window during manufacturing of an image sensor. The method includes the following steps: providing a semimanufacture of the image sensor; carrying out a preheating process; carrying out an adhesive spreading process; carrying out a transparent window closing process; and carrying out a packaging process. By carrying out the preheating process, the environmental conditions can be stabilized during the adhesive spreading process and the transparent window closing process such that the transparent window can be kept highly flat after combining By the implementation of the present invention, the chance of tilt and crack of the transparent window during manufacturing of the image sensor can be reduced, thereby achieving the goal for a better yield rate.

Abstract: A method of manufacturing a radiological image detection apparatus includes: bonding a phosphor to a sensor panel constructed such that a plurality of photoelectric conversion elements are arranged on a substrate; connecting a wiring member to a connection portion that is provided on a front face of the sensor panel opposite to the phosphor and that is electrically connected to the photoelectric conversion elements; covering with a first protective film the connection portion connected to the wiring member; peeling off the substrate from the sensor panel in which the first protective film is formed; and covering, with a second protective film having a moisture prevention property, at least a part corresponding to the connection portion in a rear face of a sensor portion exposed when the substrate is peeled off from the sensor panel.

Abstract: A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate.

Abstract: A radiological image detection apparatus includes: a first scintillator and a second scintillator that emit fluorescent lights in response to irradiation of radiation; and a first photodetector and a second photodetector that detect the fluorescent lights; in which the first photodetector, the first scintillator, the second photodetector, and the second scintillator are arranged in order from a radiation incident side, and a high activator density region in which an activator density is relatively higher than an average activator density in a concerned scintillator is provided to at least one of the first scintillator located in vicinity of the first photodetector and the second scintillator located in vicinity of the second photodetector.

Abstract: A radiological image detection apparatus, includes: two scintillators that convert irradiated radiation into lights; and a photodetector arranged between two scintillators, that detects the lights converted by two scintillators as an electric signal; in which: an activator density in the scintillator arranged at least on a radiation incident side out of two scintillators in vicinity of the photodetector is relatively higher than an activator density in the scintillator on an opposite side to a photodetector side.

Abstract: A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

Abstract: A semiconductor structure having a transistor region and an optical device region includes a transistor in a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulating layer, the first insulating layer is over a second semiconductor layer, and the second semiconductor layer is over a second insulating layer. A gate dielectric of the transistor is in physical contact with a top surface of the first semiconductor layer, and the transistor is formed in the transistor region of the semiconductor structure. A waveguide device in the optical device region and a third semiconductor layer over a portion of the second semiconductor layer.

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: Embodiments of a method and apparatus are described which provide a photovoltaic module in which light is diverted away from inactive areas of the photovoltaic module to active areas which generate electrical charges. A front support structure of a module is configured to redirect incident light to the active areas.

Abstract: There are provided a camera module and a method of manufacturing the same. The camera module according to embodiments of the present invention includes: a lens assembly including at least one lens element layer and two lenses integrally formed on each lens element layer, the two lenses having the same focal distance and different optical axes; an image sensor package receiving light incident through the lens assembly and having two image sensor chips disposed therein, the two image sensor chips corresponding to the respective two lenses; and a housing receiving the lens assembly and the image sensor package therein.

Abstract: A radiation detecting apparatus includes a scintillator, a plurality of photoelectric conversion elements, and a substrate having a first surface opposing the scintillator and a second surface opposite from the first surface. The substrate, the photoelectric conversion elements and the scintillator are arranged in this order from the side of the radiation detecting apparatus where radiation enters, and the second surface includes a plurality of depressions arranged in orthogonal projection areas where orthogonal projections of the plurality of projected photoelectric conversion elements are positioned and projections parts of which are positioned in the orthogonal projection areas and the remaining areas other than the parts of which are positioned between the orthogonal projection areas.

Abstract: A multi-junction photovoltaic structure which includes a first photovoltaic sub-cell having at least one junction, a second photovoltaic sub-cell having at least one junction and having a band gap smaller than a smallest band gap of the first photovoltaic sub-cell, and an interlayer that provides optical coupling between the first and second photovoltaic cells, wherein the interlayer has a physical thickness substantially similar or less than a vacuum wavelength of light corresponding to a smallest band gap of the second photovoltaic sub-cell.

Abstract: A charged coupled device (CCD) module fixed between a lens assembly and a main board having a first plate surface is disclosed. The CCD module comprises a hard PCB having a first surface and a second surface, a CCD component, and at least one fixed member. The first surface of the hard PCB faces the first plate surface of the main board. The CCD component facing the lens assembly is located on the second surface of the hard PCB. The fixed member is used for combining the hard PCB and the main board. The hard PCB and the fixed member can be used as a buffer to reduce possible damages to the CCD component and/or the main board.

Abstract: A manufacturing method of a solid-state imaging device includes: preparing a photoelectric conversion device; forming an insulating layer on a surface of the photoelectric conversion device; forming a wire-grid polarizer on a support base; bonding a forming surface of the wire-grid polarizer on the support base to the insulating layer on the surface of the photoelectric conversion device and removing the support base from the wire-grid polarizer.

Abstract: A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads.

Abstract: We describe a phase modulating spatial light modulator (SLM). The SLM comprises a substrate bearing multiple SLM pixels, each of the SLM pixels comprising a MEMS (micro electromechanical system) optical phase modulating structure. The MEMS optical phase modulating structure comprises: a pixel electrode; a spring support structure around a perimeter of the pixel electrode; and a mirror spring supported by the spring support structure. The mirror spring comprises a mirror support and a plurality of mirror spring arms each extending between the mirror support and the spring support structure, and a mirror mounted on the mirror support. Each mirror spring arm has a spiral or serpentine shape. A voltage applied to the pixel electrode flexes the mirror spring and causes the mirror to translate perpendicularly to the substrate substantially without tilting.

Abstract: A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a first surface and a second surface facing away from the first surface, photodiodes disposed on the first surface, and a wiring layer disposed on the second surface and having wiring lines electrically connected to the photodiodes and bonding pads electrically connected to the wiring lines. The second semiconductor chip includes a second semiconductor chip body having a third surface facing the wiring layer, and through-electrodes electrically connected to the bonding pads and passing through the second semiconductor chip body. The first insulation layer is disposed on the wiring layer, and the second insulation layer is disposed on the third surface of the second semiconductor chip body facing the first insulation layer and is joined to the first insulation layer.

Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more grating couplers may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chip via one or more optical fibers and/or optical source assemblies. The optical signals may be coupled to the grating couplers via a light path etched in the chip, which may be refilled with silicon dioxide. The chip may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the grating couplers via metal reflectors, which may be integrated in dielectric layers on the chip.

Abstract: The present disclosure relates to a camera module including a PCB (Printed Circuit Board, an image sensor and a lens assembly, wherein the PCB formed with an opening, a staircase sill formed at an edge of the opening to insert a lens assembly, and an accommodation structural unit provided at a lower distal end of the opening to insert the image sensor, and wherein the image sensor is assembled to the accommodation structural unit of the PCB, and the lens assembly is inserted into the staircase sill of the PCB for assembly.

Abstract: The present invention relates to devices and method for textured semiconductor materials. Devices and methods shown provide a textured surface with properties that provide a high breakdown voltage. The devices and methods of the present invention can be used to make semiconductor substrates for use in photovoltaic applications such as solar cells.

Abstract: It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.

Abstract: Low cost large area photodetector arrays are provided. In a first embodiment, the photodetectors comprise an inorganic photoelectric conversion material formed in a single thick layer of material. In a second embodiment, the photodetectors comprise a lamination of several thin layers of an inorganic photoelectric conversion material, the combined thickness of which is large enough to absorb incoming x-rays with a high detector quantum efficiency. In a third embodiment, the photodetectors comprise a lamination of several layers of inorganic or organic photoelectric conversion material, wherein each layer has a composite scintillator coating.

Abstract: A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.

Abstract: An array of aligned and dispersed carbon nanotubes includes an elongate drawn body including a plurality of channels extending therethrough from a first end to a second end of the body, where the channels have a number density of at least about 100,000 channels/mm2 over a transverse cross-section of the body. A plurality of carbon nanotubes are disposed in each channel, and the carbon nanotubes are sufficiently dispersed and aligned along a length of the channels for the array to comprise an average resistivity per channel of about 9700 ?m or less.