Abstract: A method for plasma treatment is disclosed which effects detection of the amount of particles in an plasma generation area measuring the electron density in the particles based on the numerical value of the electric density in the plasma generation area.

Abstract: The ashing method comprises the steps of forming resist on a part of an underlying layer, ion-implanting elements into the underlying layer and the resist, placing the resist in radical atmosphere including oxygen radical and then ashing an upper layer portion which includes the impurity elements and is formed an a surface of the resist, and ashing remaining portion of the resist by increasing an amount of the oxygen radical in the radical atmosphere.

Abstract: A method and apparatus employing a microwave applicator for use with an ECR plasma source for applications including etching and chemical vapor deposition is provided. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises at least one pair of coaxial resonant multiport microwave antenna arrays, injects and distributes microwave power about a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals and selected orientations relative to a coaxial transmission line, for efficiently distributing microwave power uniformly about the plasma forming portion.

Abstract: A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide

Abstract: The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.

Abstract: A dry etching method utilizing electron cyclotron resonance excited by microwaves is divided into at least a first etching step for etching a region which extends to the vicinity of a boundary between the non-etching layer and the etching layer but does not reach the non-etching layer and a second etching step conducted after the first etching step.At least one among the four control factors of output power of the magnetron, electron cyclotron resonance point, etching pressure and magnetic field intensity distribution or a combination of five control factors including the foregoing four plus a high-frequency bias power applied to the rear surface of the object to be etched is changed as desired between the first etching step and the second etching step.

Abstract: A modular semiconductor wafer processing system comprises a chamber with a wafer support and gas manifold structure that supplies reactive gases through a showerhead delivery system to one side of a wafer-being-processed and that exhausts both the reactive gases and a non-reactive gas flow. The other side of the wafer is protected from the reactive gases by evenly delivering the non-reactive gases from a platen close to the wafer. The gap between the wafer and platen, and the choice of non-reactive gas and its flow rate are adjusted to optimize the protection afforded to the wafer's one side while still allowing, for example, the stripping of a silicon nitride film from the wafer's other side.

Abstract: A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.

Abstract: For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length L.sub.g of the endless annular wave guide tube, the wavelength .lambda..sub.g of the microwave in the endless annular wave guide tube, the circumferential length L.sub.

Abstract: A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.

Abstract: In an ashing method for ashing a wafer having an aluminum wiring layer etched by a chlorine containing gas, the wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH.sub.3 OH, C.sub.2 H.sub.5 OH, n--C.sub.3 H.sub.7 OH, and i--C.sub.3 H.sub.7 OH is used as an ashing gas, a flow ratio between the alcohol gas and the oxygen gas is set in the range of 1:1 to 1:5, pressure in an ashing chamber is set to 200 Pa or more, and temperature in the ashing chamber is set in the range of 200.degree. C. to 270.degree. C. Accordingly, corrosion in the aluminum wiring layer due to a residual component of the chloride containing gas in a photoresist film can be prevented.

Abstract: Silicon material layers formed on an oxide underlayer are attached using a plasma including a gas mixture of a halogen and oxygen. Intensities of first emissions from the plasma at a first wavelength and second emissions from the plasma at a second wavelength are measured. A ratio of the first emissions intensity to the second emissions intensity is determined. The selectivity of silicon layers to oxide underlayers is measured for various conditions of the plasma under which the emissions intensity ratio is obtained. A correlation between the emissions intensity ratio and the selectivity is then established for various etching parameters. A plasma condition to obtain a desired selectivity may then be appropriately set using the established correlation.

Abstract: A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.

Abstract: A method for limiting contaminant particle deposition upon integrated circuit layers within plasma assisted process reactor chambers. First, a plasma assisted process is undertaken upon an integrated circuit layer within a plasma assisted process reactor chamber. The plasma assisted process employs a first reactant gas composition, a first radio frequency power and a first reactor chamber pressure appropriate to the plasma assisted process and the integrated circuit layer. Immediately following the plasma assisted process is undertaken a first plasma purge step. The first plasma purge step employs a first concentration of an oxidizing reactant gas, a first concentration of a non-oxidizing reactant gas, a second radio frequency power and a second reactor chamber pressure. The second radio frequency power is lower than the first radio frequency power and the second reactor chamber pressure is higher than the first reactor chamber pressure.

Abstract: A method for generating plasma, comprising irradiating an electromagnetic wave to an energy converter capable of converting an irradiated electromagnetic wave to an electric energy and discharging said electric energy, in the presence of a rare gas in a chamber. A method for activating plasma, further comprising applying an electric cr magnetic field to said generated plasma, a process for treating a substrate, using the generated and optionally activated plasma, and apparatuses therefor are also disclosed.