Abstract: A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm3+, 1190 to 1260 nm, and Er3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho3+, Tm3+, and Er3+-doped metal oxide, such as ZrO2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.

Abstract: Perovskite/silicon tandem solar cells have the potential to achieve high efficiencies through improvements to the optical and electrical parameters of perovskite/silicon tandem devices, via photon management, particularly using the optical band-edge shifting properties of silicon via surface modification of silicon. Silicon can directly extract the light generated charge carriers, which can achieve an efficiency of over 28%.

Abstract: A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

Abstract: A method of fabricating an airfoil, and the airfoil or airfoil skin so fabricated, including a solar cell array arranged on the surface of the airfoil by providing and utilizing an assembly fixture having a smooth, concave surface. An uncured supporting film composed of a composite material (such as a carbon fiber composite) is mounted directly on the back side of the solar cells; and the film of composite material is co-cured on the assembly fixture so that the array of interconnected solar cells is bonded to the supporting film. The bonded and cured film of composite material and an array of interconnected solar cells is then removed from the assembly fixture.

Abstract: A tandem solar cell includes a substrate a plurality of sub-cells stacked on the substrate and configured to sequentially perform photoelectric conversion with different wavelength band, and a metal disk array disposed on at least one of interfaces between adjacent sub-cells. A center wavelength of wavelength bands corresponding to the sub-cells gradually decreases as progressing downward with respect to an uppermost layer. The metal disk array reflects a light transmitting a sub-cell disposed over the metal disk array without being absorbed therein. The metal disk array is inserted by means of wafer bonding.

Abstract: A multijunction solar cell assembly of two or more spatially split solar cell subassemblies, each of which includes a respective monolithic semiconductor body composed of a tandem stack of solar subcells, where the subassemblies are interconnected electrically to one another so that a series electrical circuit is formed between groups of one or more subcells in each subassembly. In some cases, relatively high band gap semiconductor materials can be used for the upper subcells. The solar cell assemblies can be particularly advantageous for applications in space.

Abstract: This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells.

Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.

Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic device comprises a plurality of stacked p-n junctions. The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The optoelectronic semiconductor device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a multi-junction photovoltaic device to enhance its efficiency through photon recycling.

Abstract: A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Abstract: An optical element has a plano-plano body formed of a first material having a greater refraction index n1 and a second material having a lesser refraction index n2. Both indices are greater than one. The absolute value of the index contrast, log10 (n1/n2), is in the range from about 0.001 to about 0.17, preferably from about 0.01 to about 0.05. The materials have an induced absorbance rate ?Abs/Dose less than or equal to about 0.4, preferably less than or equal to about 0.2. The materials are arranged such that an interface with at least one cusp is defined therebetween. The cusp has an apex pointed toward the material having the greater index of refraction. The cusp is operative to produce a region of increased light intensity on one surface of the optical element in response to light incident on the other surface of the optical element.

Abstract: A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate with a lower surface and an upper surface; providing a second substrate with a lower surface and an upper surface; bonding the first substrate to the second substrate at the upper surface of the first substrate and the lower surface of the second substrate; and subsequently forming at least one first solar cell layer on the lower surface of the first substrate and at least one second solar cell layer at the upper surface of the second substrate.

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Abstract: A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

Abstract: Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and methods of making such devices. The VC Q-BIC material has two or more quantum dot layers, where the layers have quantum dots (individual quantum dots or quantum dot clusters) in a semiconductor material, and adjacent quantum dot layers are separated by a spacer layer of doped semiconductor material. The VC-QBIC nanomaterial provides long photocarrier lifetime, which improves the responsivity and sensitivity of detectors or conversion efficiency in solar cells as compared to previous comparable devices.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.

Abstract: A cell arrangement including a plurality of solar sub cells stacked above one another, wherein at least one solar sub cell of the plurality of solar sub cells comprises an alloy of gallium, nitrogen, arsenic and antimony.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first engineered substrate; providing a second substrate; forming at least one first solar cell layer on the first engineered substrate to obtain a first wafer structure; forming at least one second solar cell layer on the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure; detaching the first engineered substrate; removing the second substrate; and bonding a third substrate to the at least one first solar cell layer.

Abstract: A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top window material and the top first transparent conductive oxide material. The first interface region is substantially free from one or more entities from the top first transparent conductive oxide material diffused into the top window material. A top absorber material comprising a copper species, an indium species, and a sulfur species underlies the top window material. A top second transparent conductive oxide material underlies the top absorber material. A second interface region is disposed between the top second transparent conductive oxide material and the top absorber material. The bottom cell includes a bottom first transparent conductive oxide material.

Abstract: The present invention relates to a multi junction solar cell having at least four p-n junctions. The individual subcells thereby have band gaps of 1.9 eV, 1.4 eV, 1.0 eV and 0.7 eV. The multi junction solar cells according to the invention are used in space and also in terrestrial concentrator systems.

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate, providing a second substrate having a lower surface and an upper surface, forming at least one first solar cell layer on the first substrate to obtain a first wafer structure, forming at least one second solar cell layer on the upper surface of the second substrate to obtain a second wafer structure, and bonding the first wafer structure to the second wafer structure, wherein the at least one first solar cell layer is bonded to the lower surface of the second substrate and removing the first substrate.

Abstract: Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.

Abstract: Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an MOCVD process, wherein the graded interlayer is composed of (InxGa1-x)yAl1-yAs, and is formed in the MOCVD reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the MOCVD reactor, the band gap of the graded interlayer remains constant at 1.5 eV throughout the thickness of the graded interlayer.

Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10?4 ohms-cm2.

Abstract: The present invention provides an organic display device, comprising: an organic solar module for obtaining solar energy and converting the obtained solar energy into electric power, and an ultraviolet organic light emitting module driven to emit ultraviolet light by the electric power obtained from the organic solar module. The present invention can fully use solar energy and carry out ultraviolet display by combining the ultraviolet organic light emitting module with the organic solar module.

Abstract: Disclosed is an electronic apparatus in which a thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or which prevents interference between a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit. This electronic apparatus includes a thermoelectric conversion element (100) including a semiconductor layer of stacked heterostructure (38) which performs thermoelectric conversion using Seebeck effect and at least one of a photoelectric conversion element (102) in which at least a portion of the semiconductor layer of stacked heterostructure (38) performs photoelectric conversion and a transistor (104) or a diode having at least a portion of the semiconductor layer of stacked heterostructure (38) as an operating layer.

Abstract: A solar cell making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer, wherein the round P-N junction preform defines a first surface and a second surface; forming a first electrode preform on the first surface and forming a second electrode preform on the second surface, thereby forming a round solar cell preform; and forming a photoreceptive surface with the P-N junction exposed on the photoreceptive surface by cutting the round solar cell preform into a plurality of arc shaped solar cells, the photoreceptive surface being on a curved surface of the arc shaped solar cell and being configured to receive incident light beams.

Abstract: Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.

Abstract: [Problem] A baseboard and extension modules can be connected without the use of lead lines connected between the baseboard and extension module. [Solution] A baseboard includes first connectors; an extension module includes a second connector that fits with the first connectors; the first connectors and the second connector include ground terminals, source terminals, and signal terminals connected to signal lines; each of the ground terminal, each of the source terminal, and each of the signal terminals constituting a suit of terminals, a plurality of the suit constituting the first connectors; the ground terminals, the source terminals, and the signal terminals disposed at a constant pitch on the baseboard; the second connector including a suit of terminals, the suit including a ground terminal, a source terminal, and a signal terminal; and the baseboard and the extension module are directly connected only by the first connector and the second connector.

Abstract: The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.

Abstract: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.

Abstract: A method of forming a self-organized nanostructured solar cell is provided. The method includes depositing a semiconductor film on a substrate, where the semiconductor film includes a mixture of at least two constituents, then activating the semiconductor film during or after the deposition. Here, the activated semiconductor film self-assembles into an organized nanostructure geometry on the substrate, where the organized nanostructure includes a first structure of the at least one constituent having a first polarity and a second structure of the at least one constituent having a second polarity opposite to the first polarity. Further, the invention includes depositing a contact on a top surface of the organized nanostructure geometry.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: A module and a method for manufacturing a module are disclosed. An embodiment of a module includes a first semiconductor device, a frame arranged on the first semiconductor device, the frame including a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.

Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4(111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

Abstract: Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: A high-efficiency four-junction solar cell includes: an InP growth substrate; a first subcell formed over the growth substrate, with a first band gap, and a lattice constant matched with that of the growth substrate; a second subcell formed over the first subcell, with a second band gap larger than the first band gap, and a lattice constant matched with that of the growth substrate; a third subcell formed over the second subcell, with a third band gap larger than the second band gap, and a lattice constant matched with that of the substrate lattice; a composition gradient layer formed over the third subcell, with a fourth band gap larger than the third band gap; and a fourth subcell formed over the composition gradient layer, with a fifth band gap larger than the third band gap, and a lattice constant mismatched with that of the substrate.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.

Abstract: In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

Abstract: The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer (3), b1) depositing a first intrinsic a-Si:H layer (21) at a first deposition rate, b2) depositing a second intrinsic a-Si:H layer (22) at a second deposition rate, and c) depositing a negatively doped Si layer (5), whereby the second deposition rate is greater than the first deposition rate. The thin film solar cell manufactured is characterized by an increased initial and stabilized efficiency while at the same time the overall deposition rate, even by depositing two different intrinsic layers (21, 22), is kept at a reasonable and economic level.

Abstract: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: A high-concentration multi-junction solar cell and method for fabricating same is provided. The high-concentration multi-junction solar cell comprises a top cell, an intermediate cell, a bottom cell and two tunneling junctions connecting the top cell and intermediate cell and the intermediate cell and bottom cell. The emitter layers of the top and intermediate cells both employ the graded doping concentrations and have high open circuit voltage and short circuit current. The top cell emitter layer is over several hundred nanometers thicker than that of the traditional multi-junction cell so as to decrease the whole series resistance of the multi-junction cell, improve the fill factor, and gain higher photoelectric conversion efficiency.