Making Electromagnetic Responsive Array Patents (Class 438/73)
  • Patent number: 10741603
    Abstract: A method for manufacturing an image sensor comprises: forming a trench around a photodiode, wherein the photodiode comprises a first doped region with a first conductivity type dopant formed in a semiconductor substrate with a second conductivity type dopant; forming a covering portion in the trench, the covering portion with the second conductivity type dopant covering at least a portion of a sidewall or a bottom wall of the trench, wherein a doping concentration of the covering portion is higher than a doping concentration of the semiconductor substrate; and diffusing the second conductivity type dopant in the covering portion into the semiconductor substrate so as to form a second doped region with the second conductivity type dopant surrounding the at least a portion of the sidewall or the bottom wall of the trench.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: August 11, 2020
    Assignee: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION
    Inventors: Xiaolu Huang, Xiangnan Lv, Yosuke Kitamura
  • Patent number: 10714516
    Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes doping a substrate to form a first well region having a first doping type, and selectively etching an upper surface of the substrate to define a trench extending into the first well region. The trench is filled with one or more dielectric materials. The substrate is implanted to form a first photodiode region within the substrate. The first photodiode region is separated from the trench by the first well region. A first part of the one or more dielectric materials is removed from within the trench to expose a sidewall of the substrate that defines the trench and that is proximate to the first photodiode region. A doped epitaxial material having the first doping type is formed along the sidewall of the substrate.
    Type: Grant
    Filed: September 22, 2019
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yueh-Chuan Lee, Chia-Chan Chen
  • Patent number: 10696032
    Abstract: A bonding method utilizing carbon nanotubes provides first and second objects to be bonded and a carbon nanotube structure. The carbon nanotube structure comprises a super-aligned carbon nanotube film comprising carbon nanotubes, the carbon nanotubes extending substantially along a same direction. The carbon nanotube structure is laid on surface of first object and surface of second object is pressed onto the carbon nanotube structure. Pressure being applied to the first object and the second object bonds the two together.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: June 30, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xiang Jin, Zi-Peng Wu, Wen-Tao Miao, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10689573
    Abstract: The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: June 23, 2020
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Akinobu Horita, Kenji Shimada, Kenichi Takahashi, Toshiyuki Oie, Aya Ito
  • Patent number: 10672810
    Abstract: In some embodiments, the present disclosure relates to an integrated chip having a photodetector arranged within a semiconductor substrate having a first doping type. One or more dielectric materials are disposed within a trench defined by interior surfaces of the semiconductor substrate. A doped epitaxial material arranged within the trench at a location laterally between the one or more dielectric materials and the photodetector. The doped epitaxial material has a second doping type that is different than the first doping type.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: June 2, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yueh-Chuan Lee, Chia-Chan Chen
  • Patent number: 10600658
    Abstract: A method includes placing a substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the substrate, thereby pressing the substrate onto the first curved surface and bending the substrate, and removing the bended substrate from the first bending tool.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 24, 2020
    Assignee: Infineon Technologies AG
    Inventors: Andre Wedi, Guido Boenig, Niels Oeschler, Christian Stahlhut
  • Patent number: 10546889
    Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: January 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
  • Patent number: 10186543
    Abstract: An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: January 22, 2019
    Assignee: SK Hynix Inc.
    Inventor: Yun-Hui Yang
  • Patent number: 10162085
    Abstract: The present invention relates to a large area organic light emitting panel and, more particularly, to a large area organic light emitting panel which prevents an observer in front of the panel from recognizing a seam connecting organic light emitting panels, i.e. which can implement a seamless effect. To this end, the present invention provides a large area organic light emitting panel comprising: a plurality of organic light emitting panels arranged vertically and horizontally; and a seam part, formed between the plurality of organic light emitting panels, for connecting the plurality of organic light emitting panels and refracting, to the front, light laterally emitted from the organic light emitting panels by a wave guiding effect.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: December 25, 2018
    Assignee: Corning Precision Materials Co., Ltd.
    Inventors: Joo Young Lee, Kyoung Wook Park
  • Patent number: 10008465
    Abstract: An active substrate includes a plurality of active components distributed over a surface of a destination substrate, each active component including a component substrate different from the destination substrate, and each active component having a circuit and connection posts on a process side of the component substrate. The connection posts may have a height that is greater than a base width thereof, and may be in electrical contact with the circuit and destination substrate contacts. The connection posts may extend through the surface of the destination substrate contacts into the destination substrate connection pads to electrically connect the connection posts to the destination substrate contacts.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: June 26, 2018
    Assignee: X-Celeprint Limited
    Inventor: Christopher Bower
  • Patent number: 9973678
    Abstract: In various embodiments, methods, techniques, and related apparatuses for phase-detect autofocus devices are disclosed. In one embodiment, a phase-detect system includes a first color filter formed over a first pixel and a second pixel formed adjacent to the first pixel with a second color filter being formed over the second pixel. The second color filter has a color different from a color of the first color filter. A micro-lens spans the first pixel and the second pixel, configured to capture a phase difference in spatial frequency information present in an imaged scene. The first pixel and the second pixel are placed adjacent to each other in at least one of a horizontal direction, a vertical direction, and/or a diagonal direction, with an arrangement of the two pixels being replicated at either regular and/or irregular intervals across the sensor. Other methods and apparatuses are disclosed.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: May 15, 2018
    Assignee: INVISAGE TECHNOLOGIES, INC.
    Inventors: Emanuele Mandelli, Gregory Chow, Naveen Kolli
  • Patent number: 9748412
    Abstract: A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: August 29, 2017
    Assignee: International Business Machines Corporation
    Inventors: Jeehwan Kim, Ning Li, Devendra K. Sadana, Brent A. Wacaser
  • Patent number: 9716126
    Abstract: A method of manufacturing a solid-state image sensor includes forming a first element isolation and a first active region of a pixel area, and a second isolation and a second active region of a peripheral circuit area, forming a gate electrode film covering the first element isolation, the first active region, the second element isolation and the second active region, implanting an n-type impurity selectively into at least a part of the gate electrode film corresponding to the pixel area, and forming, after the implanting of the n-type impurity, a first gate electrode of the pixel area and a second gate electrode of the peripheral circuit area by patterning the gate electrode film. The part of the gate electrode film includes a portion located above a boundary between the first element isolation and the first active region.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: July 25, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masatsugu Itahashi, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Yusuke Onuki, Takumi Ogino, Keita Torii
  • Patent number: 9685481
    Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: June 20, 2017
    Assignee: International Business Machines Corporation
    Inventors: Ning Li, Devendra K. Sadana, Robert L. Wisnieff
  • Patent number: 9543352
    Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: January 10, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Volume Chien, Zen-Fong Huang, Chia-Yu Wei, Chi-Cherng Jeng, Hsin-Chi Chen
  • Patent number: 9490294
    Abstract: To provide a semiconductor device having improved performance and reduce a production cost. The semiconductor device has a plurality of photodiodes placed in array form on the main surface of a semiconductor substrate, a p+ type semiconductor region surrounding each photodiode in plan view, and a plurality of transistors placed between the direction-Y adjacent photodiodes. A method of manufacturing the semiconductor device includes forming the p+ type semiconductor region by implanting a p type impurity into the semiconductor substrate through a mask layer opened at a p+ type semiconductor region formation region and implanting an n type impurity into the semiconductor substrate through the mask layer. In the latter step, in the main surface of the semiconductor substrate, an impurity ion is implanted into a region between photodiode formation regions adjacent in the Y direction but not into a region between the photodiode formation regions adjacent in the X direction.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: November 8, 2016
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yuki Yamamoto, Tomohiro Yamashita
  • Patent number: 9412780
    Abstract: An image sensor has photodiodes formed in a Si substrate and configured to prevent carriers generated at a deep position of the Si substrate from affecting adjacent photodiodes due to lateral diffusion (crosstalk between pixels). A modified layer is formed between adjacent photodiodes and at a depth below that of the photodiodes by a laser to generate a recombination level to thereby suppress crosstalk between pixels.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: August 9, 2016
    Assignee: SII Semiconductor Corporation
    Inventor: Takeshi Koyama
  • Patent number: 9293490
    Abstract: An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: March 22, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Volume Chien, Yu-Heng Cheng, Huan-En Lin, Chi-Cherng Jeng, Fu-Tsun Tsai
  • Patent number: 9269817
    Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: February 23, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno, Shunpei Yamazaki
  • Patent number: 9219097
    Abstract: A method for producing a solid-state imaging element which has photoconversion pixels, the method including forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: December 22, 2015
    Assignee: SONY CORPORATION
    Inventors: Sanghoon Ha, Hiroaki Ishiwata
  • Patent number: 9214223
    Abstract: A resistance memory device and a memory apparatus and data processing apparatus having the same are provided. The resistance memory device includes a pair of electrode layers and a variable resistance layer interposed between the pair of electrode layers. The variable resistance layer includes at least one variable resistance material layer and a piezoelectric material layer coupled to the at least one variable resistance material layer.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: December 15, 2015
    Assignee: SK HYNIX INC.
    Inventors: Hyun Mi Hwang, Hyung Dong Lee
  • Patent number: 9171799
    Abstract: A photoelectric conversion apparatus includes a semiconductor substrate on which a photoelectric conversion element and a transistor are arranged and a plurality of wiring layers including a first wiring layer and a second wiring layer above the first wiring layer, in which a connection between the semiconductor substrate and any of the plurality of wiring layers, between a gate electrode of the transistor and any of the plurality of wiring layers, or between the first wiring layer and the second wiring layer, has a stacked contact structure.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: October 27, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hiroaki Naruse, Kenji Togo, Masatsugu Itahashi
  • Patent number: 9136407
    Abstract: A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: September 15, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masayuki Tsuchiya
  • Patent number: 9117716
    Abstract: A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: August 25, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Min-young Jung
  • Patent number: 9099389
    Abstract: A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: August 4, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung Chien Wang, Yeur-Luen Tu, Cheng-Ta Wu, Chia-Shiung Tsai
  • Patent number: 9087936
    Abstract: According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: July 21, 2015
    Assignee: Agency for Science, Technology and Research
    Inventors: Fei Sun, Ning Duan, Guo-Qiang Patrick Lo
  • Patent number: 9083121
    Abstract: One embodiment relates to a connector that includes a diode. The diode has an anode and a cathode. The connector further includes a first electrical connection which connects to the anode, a second electrical connection which also connects to the anode, and a third electrical connection which connects to the cathode. Another embodiment relates to a photovoltaic laminate which includes a string of photovoltaic cells and three electrical conductors extending out of two discrete penetrations of the laminate. A first electrical conductor is connected to a first end of the string, a second electrical conductor is connected to a second end of the string, and a third electrical conductor is also connected to the second end of the string. The first and third electrical conductors extend out of the first discrete penetration, while the second electrical conductor extends out of the second discrete penetration. Other features and embodiments are also disclosed.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: July 14, 2015
    Assignee: SunPower Corporation
    Inventors: David DeGraaff, Adam Detrick
  • Publication number: 20150145096
    Abstract: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Wen-I HSU, Feng-Chi HUNG, Chun-Chieh CHUANG, Dun-Nian YAUNG, Jen-Cheng LIU
  • Publication number: 20150145085
    Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.
    Type: Application
    Filed: May 16, 2014
    Publication date: May 28, 2015
    Applicant: SK hynix Inc.
    Inventors: Do-Hwan KIM, Jong-Chae KIM, Kyoung-Oug RO, Il-Ho SONG
  • Publication number: 20150145087
    Abstract: A manufacturing method for a photoelectric conversion apparatus in which a microlens is arranged for multiple electric charge accumulation regions formed on a semiconductor substrate, includes forming a first impurity region of a first conductive type on the semiconductor substrate; and forming a second impurity region of a second conductive type that is opposite the first conductive type in a part of the first impurity region to isolate the first impurity region into multiple regions such that each of the multiple electric charge accumulation regions includes isolated first impurity regions.
    Type: Application
    Filed: November 19, 2014
    Publication date: May 28, 2015
    Inventor: Junji Iwata
  • Patent number: 9041073
    Abstract: Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: May 26, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jungchak Ahn, Yitae Kim
  • Patent number: 9040973
    Abstract: Pixel electrodes have end portions inclined at inclination angles ?, where 30°???85°, relative to a substrate surface of a substrate. An organic layer disposed on the pixel electrodes is formed by vapor deposition using deposition beams that enter the substrate surface at incident angles ? smaller than 90°??max, where ?max is the maximum inclination angle among the inclination angles of the end portions of the pixel electrodes, under a deposition substrate temperature condition lower than the glass transition temperature of the organic layer.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: May 26, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Shinji Imai
  • Patent number: 9040341
    Abstract: A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: May 26, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chen Lu, Ching-Sen Kuo, Shih-Chi Fu, Ming-Ying Hsieh
  • Publication number: 20150140722
    Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 21, 2015
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Publication number: 20150137299
    Abstract: There is provided a solid state imaging device according to the embodiment. The solid state imaging device includes an imaging area and an element isolation unit having a light shielding effect. In the imaging area, a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor layer. The element isolation unit is embedded so as to surround a light-receiving region of each photoelectric conversion element. A center position of an opening region surrounding the light-receiving region is positioned on the center side of the imaging area than a corresponding center position of the light-receiving region.
    Type: Application
    Filed: September 2, 2014
    Publication date: May 21, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Tetsuya YAMAGUCHI
  • Publication number: 20150140719
    Abstract: An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive path between the front side and the back side of the semiconductor body; and a conductive contact, defining a conductive path on the front side of the semiconductor body, between the active area and the vertical conductive connection, wherein the vertical conductive connection is formed on the lateral surface of the die, outside the active area.
    Type: Application
    Filed: January 20, 2015
    Publication date: May 21, 2015
    Inventor: CROCIFISSO MARCO ANTONIO RENNA
  • Patent number: 9035413
    Abstract: A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: May 19, 2015
    Assignee: Robert Bosch GmbH
    Inventors: Georg Bischopink, Silvia Kronmueller, Christoph Schelling
  • Patent number: 9034682
    Abstract: A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Sub Shim, Jung-Chak Ahn, Bum-Suk Kim, Kyung-Ho Lee
  • Patent number: 9035412
    Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: May 19, 2015
    Assignee: OSI Optoelectronics, Inc.
    Inventors: Peter Steven Bui, Narayan Dass Taneja
  • Publication number: 20150123233
    Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.
    Type: Application
    Filed: January 16, 2014
    Publication date: May 7, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
  • Publication number: 20150123178
    Abstract: The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GE1 of an amplification transistor and is not introduced into the interior of a semiconductor substrate 1S. Concretely as shown in FIG. 20, a resist film FR1 is patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE1. Then fluorine is injected into the interior of the gate electrode GE1 exposed from an opening OP1 by an ion implantation method using the resist film FR1 in which the opening OP1 is formed as a mask.
    Type: Application
    Filed: October 25, 2014
    Publication date: May 7, 2015
    Inventors: Yukio Nishida, Tomohiro Yamashita, Yuki Yamamoto
  • Patent number: 9023736
    Abstract: A solar cell module manufacturing apparatus includes a stage, a holding member, a moving mechanism, and a pushing member. The stage suctions a plurality of elongated solar cells that is arranged to form a solar cell module. The holding member releasably holds a portion of a solar cell to be placed on the stage. The moving mechanism moves the holding member forward and backward with respect to the stage. The moving mechanism moves the holding member backward in a state that an end portion in a front side of the cell held by the holding member that has been moved forward is suctioned on the stage, and then the portion of the cell is released by the holding member. The pushing member moves over the cell such that the pushing member pushes a lift portion of the cell down to the stage while the holding member moves backward.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: May 5, 2015
    Assignee: Toray Engineering Co., Ltd.
    Inventors: Takashi Iwade, Toyoharu Terada, Kazunori Nakakita
  • Patent number: 9024361
    Abstract: Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: May 5, 2015
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohri, Yasunori Sogoh
  • Publication number: 20150118787
    Abstract: A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers.
    Type: Application
    Filed: December 4, 2014
    Publication date: April 30, 2015
    Inventors: Yi-Shin Chu, Cheng-Tao Lin, Meng-Hsun Wan, Szu-Ying Chen, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20150115243
    Abstract: A solid-state image pickup device includes: an organic photoelectric conversion layer; a passivation layer formed to cover a top of the organic photoelectric conversion layer; and an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.
    Type: Application
    Filed: April 17, 2013
    Publication date: April 30, 2015
    Inventor: Yuki Miyanami
  • Publication number: 20150114446
    Abstract: A multilayer back electrode for a photovoltaic thin-film solar cell, including: at least one bulk back electrode layer, at least one, ohmic, contact layer, obtained by applying at least one ply containing/essentially made of at least one metal chalcogenide, selected from molybdenum, tungsten, tantalum, cobalt, and/or niobium, and the chalcogen being selected from selenium and/or sulfur, with physical or chemical gas phase deposition while using at least one metal chalcogenide source, or obtained by applying at least one metal ply (first ply), the first ply and the bulk back electrode layer not corresponding in their composition, in the particular metal used or, if multiple metals are in the metal ply and the bulk back electrode layer, with regard to at least one, in particular all of these metals (Mo, W, Ta, Nb, and/or Co) and a metal chalcogenide ply (second ply), use of the back electrode for manufacturing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the back
    Type: Application
    Filed: February 18, 2013
    Publication date: April 30, 2015
    Applicant: Robert Bosch GmbH
    Inventor: Volker Probst
  • Patent number: 9018031
    Abstract: A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer is bonded to the silicon oxide layer on the first wafer. After that, an SOI wafer including the silicon oxide layer formed on the second wafer and the single crystal silicon layer formed on the silicon oxide layer is formed by separating the first wafer including the single crystal silicon layer from the second wafer including the single crystal silicon layer in the defect layer. Then, a photodiode is formed in the single crystal silicon layer. An interconnect layer is formed on a surface of the single crystal silicon layer which is opposite to the silicon oxide layer.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: April 28, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventor: Akira Tsukamoto
  • Patent number: 9018034
    Abstract: Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: April 28, 2015
    Assignee: Jusung Engineering Co., Ltd.
    Inventor: Cheol Hoon Yang
  • Publication number: 20150111320
    Abstract: A device having a plurality of thin film photovoltaic cells (PV) formed over a passivation layer. The device comprises a plurality of thin film photovoltaic (PV) cells formed over the passivation layer, each PV cell includes at least a lower conducting layer (LCL) and an upper conducting layer (UCL); and a conducting path connecting at least a UCL of a first PV cell to at least a LCL of a second PV cell, wherein at least a first array of PV cells comprised of at least a first portion of the plurality of PV cells is connected by the respective UCL and LCL of each PV cell to provide a first voltage output. In an embodiment the passivation layer is formed over a target integrated circuit (TIC), the TIC having a top surface and a bottom surface.
    Type: Application
    Filed: December 23, 2014
    Publication date: April 23, 2015
    Applicant: Sol Chip, Ltd.
    Inventors: Shani KEYSAR, Reuven HOLZER, Ofer NAVON, Ram FRIEDLANDER
  • Publication number: 20150111335
    Abstract: A method for module-level processing of photovoltaic cells is provided. The method includes: bonding at least one crystalline silicon photovoltaic substrate to a carrier by means of an adhesive layer, thereby leaving part of the adhesive layer uncovered; after bonding, exposing the uncovered part of the adhesive layer and the at least one crystalline silicon photovoltaic substrate to a plasma; and removing a surface portion of the at least one crystalline photovoltaic substrate. The method may further include performing an annealing step of the adhesive before bonding the at least one photovoltaic substrate to the carrier, and performing an outgassing step of the adhesive after bonding the at least one photovoltaic substrate to the carrier. The method may further include module-level rear side processing of the at least one crystalline silicon photovoltaic substrate to make a photovoltaic module.
    Type: Application
    Filed: September 8, 2014
    Publication date: April 23, 2015
    Applicants: KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D, IMEC VZW
    Inventors: Stefano Granata, Twan Bearda