Radiation Or Energy Treatment Modifying Properties Of Semiconductor Region Of Substrate (e.g., Thermal, Corpuscular, Electromagnetic, Etc.) Patents (Class 438/795)
  • Patent number: 10367063
    Abstract: A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: July 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hao-Ling Tang, Jon-Hsu Ho, Shao-Hwang Sia, Wen-Hsing Hsieh, Ching-Wei Tsai
  • Patent number: 10340151
    Abstract: A ceiling heat insulator installed above a side wall heat insulator of a heating apparatus for a substrate processing apparatus for processing a substrate is provided. The ceiling heat insulator includes a gas-flow path installed therein to allow a cooling gas to pass therethrough so that the ceiling heat insulator has a solid cross-sectional area in an outer edge side of the ceiling heat insulator that is smaller than that in a center side of the ceiling heat insulator.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: July 2, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tetsuya Kosugi, Motoya Takewaki, Masaaki Ueno, Hitoshi Murata
  • Patent number: 10340294
    Abstract: Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: July 2, 2019
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION KOREA AEROSPACE UNIVERSITY
    Inventor: Jong Hyun Seo
  • Patent number: 10236408
    Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: March 19, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masataka Sato, Naoki Ikezawa, Junpei Yanaka, Satoru Idojiri
  • Patent number: 10185232
    Abstract: A liquid immersion exposure apparatus includes a projection system, a liquid supply inlet, a first liquid collection outlet, and a separator fluidically connected to the first liquid collection outlet, the separator separating one of liquid and gas, which have been collected via the first liquid collection outlet, from the other. A stage which holds a substrate has a second liquid collection outlet that collects a portion of the liquid supplied from the liquid supply inlet which comes from a gap between an upper surface of the substrate and an upper surface of the stage.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: January 22, 2019
    Assignee: NIKON CORPORATION
    Inventors: Nobutaka Magome, Naoyuki Kobayashi
  • Patent number: 10148244
    Abstract: A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material deposited on a facial surface of the element. In one instance, the resonance of the element can be adjusting by using a feedback loop to control annealing of the deposited film.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: December 4, 2018
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Michael David Henry, Janet Nguyen, Matt Eichenfield, Roy H. Olsson
  • Patent number: 10147640
    Abstract: A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. The removal of the pore-filling agent includes heating a substrate holder upon which the substrate rests to a holder temperature greater than 100 degrees C. and less than 400 degrees C., and while heating the substrate holder, exposing the substrate to electromagnetic (EM) radiation, wherein the EM radiation includes emission at a wavelengths within the ultraviolet (UV) spectrum, visible spectrum, infrared (IR) spectrum, or microwave spectrum, or combination thereof.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: December 4, 2018
    Assignee: Tokyo Electron Limited
    Inventor: Junjun Liu
  • Patent number: 10135217
    Abstract: The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a transparent window spaced apart from the light source by a distance; and an optical system disposed between the light source and the transparent window. The transparent window is configured such that emergent light of the light source is vertically incident onto the transparent window after passing through the optical system.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: November 20, 2018
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiangjun Tian, Yan Chen, Xueyong Wang, Zhi Wang
  • Patent number: 10126540
    Abstract: A method of focusing a telecentric imaging system (30), particularly as a part of a measuring machine (10) includes measuring an image of a feature (25) of an object (24) through the telecentric imaging system (30) in a telecentric operating mode and measuring an image of the feature (25) of the object (24) through the telecentric imaging system (30) in a non-telecentric operating mode. A value is acquired characterizing a function by which the size of the imaged feature varies in the non-telecentric mode with the relative displacement of the object (24) through the depth of field (D). The measures of the image of the feature (25) of the object (24) in the telecentric and non-telecentric modes are related to each other and to the acquired value as an estimate of a relative displacement of the object (24) from the best focus position.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: November 13, 2018
    Assignee: Quality Vision International, Inc.
    Inventors: David E. Lawson, Stephanie M. Bloch
  • Patent number: 10103267
    Abstract: A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Yuan-Nien Chen
  • Patent number: 10083843
    Abstract: Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: September 25, 2018
    Assignee: Ultratech, Inc.
    Inventors: Andrew M. Hawryluk, Serguei Anikitchev
  • Patent number: 10014178
    Abstract: The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: July 3, 2018
    Assignee: IMEC VZW
    Inventors: Wilfried Vandervorst, Janusz Bogdanowicz
  • Patent number: 9991114
    Abstract: A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: June 5, 2018
    Assignee: ORTHOGONAL, INC.
    Inventors: Douglas Robert Robello, Terrence Robert O'Toole, Frank Xavier Byrne, Diane Carol Freeman, Charles Warren Wright, Sandra Rubsam, Kenneth Nicholas Boblak, Meng Zhao
  • Patent number: 9985055
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: May 29, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Satoru Tone
  • Patent number: 9984868
    Abstract: Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 29, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Woong Jae Lee, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty
  • Patent number: 9953125
    Abstract: Embodiments of the present invention may provide the capability to design SRAM cells may be designed that is compatible with the requirements of InGaAs integration by selective epitaxy in SiO2 cavities without sacrificing density and area scaling. In an embodiment of the present invention, a computer-implemented method for designing a hybrid integrated circuit may comprise receiving data representing a layout of a static random-access memory cell array, identifying areas between active channel regions that do not overlap with transistor gates of static random-access memory cells of the static random-access memory cell array, selecting from among the identified areas at least one area, expanding the selected areas to determine whether the expanded area intersects with a p-doped active Si semiconductor or p-channel semiconductor area, and marking as Si seed locations the identified expanded areas that do not intersect on both sides with a channel active transistor region.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: April 24, 2018
    Assignee: International Business Machines Corporation
    Inventors: Daniele Caimi, Lukas Czornomaz, Veeresh V. Deshpande, Vladimir Djara, Jean Fompeyrine
  • Patent number: 9922855
    Abstract: A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element to adjust the temperature of the substrate support device to a temperature value based on the temperature difference. The temperature value is not equal to the desired temperature for the substrate support device. The method further includes loading the substrate onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature and, during a second period that follows the first period, controlling the temperature of the substrate support device to the desired temperature for the substrate support device.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: March 20, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Tao Zhang, Ole Waldmann, Eric A. Pape
  • Patent number: 9904163
    Abstract: Disclosed is a mask for use in a lithography system having a defined resolution. The mask comprises first and second patterns that are greater than the defined resolution and a sub-resolution feature that is less than the defined resolution. Portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area. The size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: February 27, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-De Ho, Ching-Yu Chang, Kuei-Liang Lu, Ming-Feng Shieh
  • Patent number: 9829804
    Abstract: The invention relates to a substrate holding device comprising a holding plate, a base plate, an array of supports, and an array of droplets of a heat absorbing material. The holding plate comprises a first side for holding a substrate. The base plate is arranged at a distance from the holding plate and provides a gap between the base plate and the holding plate at a side of the holding plate opposite to the first side. The array of supports is arranged in between the holding plate and the base plate. The array of liquid and/or solid droplets is arranged in between the holding plate and the base plate, and the droplets are arranged to contact both the base plate and the holding plate. The droplets are arranged spaced apart from each other and from the supports, and are arranged adjacent to each other in a direction along the gap.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: November 28, 2017
    Assignee: MAPPER LITHOGRAPHY IP B.V.
    Inventors: Paul Ijmert Scheffers, Jerry Johannes Martinus Peijster
  • Patent number: 9824894
    Abstract: Described herein are methods for flattening a substrate, such as a semiconductor wafer, to reduce bowing in such substrates. Methods include treating or bombarding a backside surface of a substrate with particles of varying doses, densities, and spatial locations. Particle bombardment and selection is such that the substrate becomes more planar by selectively increasing or decreasing z-height points to reduce overall deflection. One or more tensile or compressive films can be added to the backside surface to be selectively relaxed at specific point locations. Such methods can correct bowing in substrates resulting from various fabrication processes such as thermal annealing.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: November 21, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Anton J. deVilliers
  • Patent number: 9793122
    Abstract: A processing system for forming a cross-section of an object. The processing system comprises a focused ion beam system for forming the cross-section from a pre-prepared surface region of the object and a laser and a light optical system for forming the pre-prepared surface region by laser ablation of a processing region of the object with a first and a second laser beam. The light optical system is configured to direct the first and the second laser beams onto common impingement locations of a common scanning line in the processing region for scanning the first laser beam and for scanning the second laser beam. For each of the impingement locations, an angle between a first incidence direction along an axis of the first laser beam and a second incidence direction along an axis of the second laser beam is greater than 10 degrees, measured in a stationary coordinate system.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: October 17, 2017
    Assignee: CARL ZEISS MICROSCOPY GMBH
    Inventor: Carl Kuebler
  • Patent number: 9768281
    Abstract: An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: September 19, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroki Ohara, Toshinari Sasaki
  • Patent number: 9679773
    Abstract: According to various embodiments, a method may include: disposing a dopant in a semiconductor region; forming a radiation absorption layer including or formed from at least one allotrope of carbon over at least a portion of the semiconductor region; and activating the dopant at least partially by irradiating the radiation absorption layer at least partially with electromagnetic radiation to heat the semiconductor region at least partially.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: June 13, 2017
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Manfred Engelhardt
  • Patent number: 9620361
    Abstract: An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: April 11, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Byoung-Kwon Choo, Sang-Hoon Ahn, Byoung-Ho Cheong, Joo-Woan Cho, Hyun-Jin Cho, Soo-Yeon Han
  • Patent number: 9614098
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 4, 2017
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ce Zhao, Chunsheng Jiang, Guangcai Yuan
  • Patent number: 9580835
    Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: February 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
  • Patent number: 9558961
    Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: respectively forming a first layer and a second layer at the top of a protruding portion and at the bottom of a depressed portion of a treatment target having protrusions/depressions in such a manner that sidewalls of the protruding portion is exposed, supplying a treatment liquid to the treatment target having the first layer and the second layer, bringing a catalyst into contact with or closer to the first layer and thereby increasing the dissolution rate of the first layer in dissolving into the treatment liquid and dissolving the first layer into the treatment liquid, and sequentially dissolving the protruding portion and the second layer into the treatment liquid after the dissolution of the first layer.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: January 31, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akifumi Gawase, Yukiteru Matsui, Kenji Iwade, Takahiko Kawasaki
  • Patent number: 9530650
    Abstract: The goal is the improvement of technologies of modification of material properties by decreasing expenditures of energy and time and extending possibilities for modification of the materials by creating and maintaining a metastable state, which is characterized by a change in the structure of the material. The invention belongs to the technological field of manufacturing materials with desired properties, and in part to the field of methods of defect generation in crystals, and it can be applied in industries that apply the process of material doping with impurities in order to manufacture materials having a desired concentration of defects and an increased concentration of charge carriers, to create a metastable structural state of the material, as well as to measure energy and doses of radio waves.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: December 27, 2016
    Inventors: Romaldas Purlys, Arvydas Juozapas Janavicius, Vitalij Balandin, Mindaugas Viliunas, Saulius Balakauskas, Andrius Poskus
  • Patent number: 9397224
    Abstract: A transistor in a display device is expected to have higher withstand voltage, and it is an object to improve the reliability of a transistor which is driven by high voltage or large current. A semiconductor device includes a transistor in which buffer layers are provided between a semiconductor layer forming a channel formation region and source and drain electrode layers. The buffer layers are provided between the semiconductor layer forming a channel formation region and the source and drain electrode layers in order to particularly relieve an electric field in the vicinity of a drain edge and improve the withstand voltage of the transistor.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: July 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 9373649
    Abstract: The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: June 21, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Wei Yang, Ke Wang
  • Patent number: 9343267
    Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: May 17, 2016
    Assignee: D2S, Inc.
    Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
  • Patent number: 9343348
    Abstract: The invention relates to a substrate for producing a substrate-product substrate combination by aligning, bringing into contact, and bonding a contact side of the large-area substrate to a support surface of a carrier substrate, whereby the substrate has a diameter d1, which can be reduced during back-thinning.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: May 17, 2016
    Inventor: Erich Thallner
  • Patent number: 9343292
    Abstract: Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: May 17, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Tomoyuki Obu, Masaki Kurokawa
  • Patent number: 9330919
    Abstract: A method for manufacturing a substrate is provided. The method includes irradiating a single crystal substrate with a beam of laser or charged particles while moving an irradiation point of the beam with respect to the single crystal substrate so that a trajectory of the irradiation point on a surface of the single crystal substrate describes a striped pattern of straight lines. Non-crystalline regions are formed in the single crystal substrate along the trajectory. The irradiation is repeated multiple times so that directions of the striped patterns are different from each other among the multiple times of irradiation. The repetition of the irradiation changes warpage of the single crystal substrate. All of directions of the straight lines described in the multiple times of irradiation are not parallel to any of directions of crystal axes of the single crystal substrate in a plane parallel to the surface.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: May 3, 2016
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Yuto Kurokawa
  • Patent number: 9312398
    Abstract: High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: April 12, 2016
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Timothy P. Holme, Friedrich B. Prinz, Andrei Iancu
  • Patent number: 9305940
    Abstract: A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: April 5, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Bong-Kyun Kim, Young-Min Moon
  • Patent number: 9252279
    Abstract: To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: February 2, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Watanabe, Mitsuo Mashiyama, Takuya Handa, Kenichi Okazaki
  • Patent number: 9230837
    Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: January 5, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
  • Patent number: 9221269
    Abstract: Methods and systems for high speed surface blackening and/or coloring are disclosed, including generating electromagnetic radiation from an ultrashort pulse laser (UPL); coupling the electromagnetic radiation from the UPL to a scanner comprising a scanning and focus range, wherein the scanner is configured to receive the electromagnetic radiation from the UPL and to scan and focus the electromagnetic radiation onto a sample; using a computer to adjust the pulse repetition rate and the energy of the UPL; using a five degree of freedom motorized stage to position the sample; using a dichroic filter positioned between the scanner and the sample; focusing an imager through the dichroic filter and onto the surface of the sample; using a processor to acquire and process images to monitor the surface blackening and/or coloring of the sample within the scanning and focus range of the electromagnetic radiation. Other embodiments are described and claimed.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: December 29, 2015
    Inventor: Jian Liu
  • Patent number: 9211610
    Abstract: A device for cutting a structure including nanotubes, including: a mechanism to polarize linearly laser pulses emitted in a direction of the structure, wherein a duration of the laser pulses is roughly between 1 femtosecond and 300 femtoseconds; and a mechanism to focus the linearly polarized laser pulses on the structure.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: December 15, 2015
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Pascal Boulanger, Olivier Sublemontier, Olivier Gobert
  • Patent number: 9166058
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: October 20, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Kengo Akimoto, Yasuo Nakamura
  • Patent number: 9147703
    Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: September 29, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Wen-De Wang
  • Patent number: 9142465
    Abstract: Precise annealing of identified defective regions of a Focal Plane Array (“FPA”) (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: September 22, 2015
    Assignee: Sandia Corporation
    Inventor: Daniel A. Bender
  • Patent number: 9136192
    Abstract: A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: September 15, 2015
    Assignee: SINTOKOGIO, LTD.
    Inventors: Kouichi Inoue, Kazuyoshi Maeda, Norihito Shibuya
  • Patent number: 9123820
    Abstract: A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: September 1, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Sumio Katoh
  • Patent number: 9111804
    Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: August 18, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hidekazu Miyairi, Kengo Akimoto, Kojiro Shiraishi
  • Patent number: 9111883
    Abstract: The present invention provides a method for evaluating silicon single crystal wherein an amount ?[C] of carriers generated due to oxygen donors produced when a heat treatment is performed to the silicon single crystal is calculated and evaluated, the amount ?[C] being calculated from oxygen concentration [Oi] in the silicon single crystal, a temperature T of the heat treatment, a time t of the heat treatment, and an oxygen diffusion coefficient D(T) at the temperature T by using the following relational expression: ?[C]=?[Oi]5×exp(??·D(T)·[Oi]·t) (where ? and ? are constants). As a result, there is provided a method that enables evaluating an amount of carriers generated due to oxygen donors in silicon single crystal in a further versatile manner.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: August 18, 2015
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Ryoji Hoshi, Hiroyuki Kamada, Suguru Matsumoto
  • Patent number: 9105570
    Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: August 11, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
  • Patent number: 9087696
    Abstract: In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: July 21, 2015
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: James S. Im, Yikang Deng, Qiongying Hu, Ui-Jin Chung, Alexander B. Limanov
  • Patent number: 9064797
    Abstract: Systems and methods are provided for dopant activation in a semiconductor structure for fabricating semiconductor devices. For example, a substrate is provided. A semiconductor structure is formed on the substrate. Pre-amorphization implantation is performed on the semiconductor structure. Microwave radiation is applied to the semiconductor structure to activate dopants in the semiconductor structure for fabricating semiconductor devices. Microwave-radiation absorption of the semiconductor structure is increased after the pre-amorphization implantation.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: June 23, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Hsiung Tsai, Chen-Feng Hsu, Yi-Tang Lin, Clement Hsingjen Wann