Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm?1 to 1520 cm?1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm?1 to 1450 cm?1 and an infrared wave number range of from more than 1450 cm?1 to 1520 cm?1, a peak positioned within the infrared wave number range of from 1380 cm?1 to 1450 cm?1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm?1 to 1750 cm?1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transfo

Abstract: A method of fabricating a photovoltaic device 100, includes the steps of providing a glass substrate 102, depositing a molybdenum layer 104 on a surface of the glass substrate, directing light through the glass substrate to the near-substrate region of the molybdenum layer 206, detecting an optical property of the near-substrate region of the molybdenum layer after interaction with the incident light 208 and determining a density of the near-substrate region of the molybdenum layer from the detected optical property 210. A molybdenum deposition parameter may be controlled based upon the determined density of the near-substrate region of the molybdenum layer 218. A non-contact method measures a density of the near-substrate region of a molybdenum layer and a deposition chamber 300.

Abstract: Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase Vt. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease Vt. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies Vt. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.

Abstract: A manufacturing method of white-light emitting elements that is one example of the present invention is a manufacturing method of a white-light emitting element with the light emitting diode chip covered with the fluorescent-body-containing resin member that has been formed with the fluorescent-body-containing resin material containing a resin and fluorescent bodies, and includes: an irradiating step of irradiating the fluorescent-body-containing resin material with the blue laser beam; a measuring step of measuring the fluorescence strength of the fluorescence light emission from the fluorescent bodies that have been excited by the blue laser beam with which the irradiation has been carried out; and an applying step of applying, to the light emitting diode chip, a quantity of the fluorescent-body-containing resin material, the quantity being based on the fluorescence strength that has been measured.

Abstract: An optical property evaluation apparatus includes: a light conversion filter converting light emitted from an LED chip or a bare LED package, which is to be evaluated, into a different wavelength of light, and emitting a specific color of light; and an optical property measurement unit receiving the specific color of light emitted from the light conversion filter and measuring the optical properties of the received light.

Abstract: In a method of determining the distance (d) between an integrated circuit (1) and a substrate (2) emitted light enters the at least semi transparent substrate (2), passes through the substrate (2) and an at least semi transparent material (8), is reflected by the integrated circuit (1), passes again through the material (8) and the substrate (2), and leaves the substrate (2). The at least semi transparent material (8), particularly is an at least semi transparent adhesive, provided between the substrate (2) and the integrated circuit (1). The distance (d) between the substrate (2) and the integrated circuit (1) is determined by evaluating the intensities of the light leaving and entering the substrate (2), particularly by evaluating the ratio between the intensities of the light leaving and entering the substrate (2).

Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.

Abstract: A method of bonding a first substrate and a second substrate includes the steps of rotating first substrate with an adhesive mass thereon, and second substrate contacting the mass and overlying the first substrate, controlling a vertical height of a heated control platen spaced apart from and not contacting the second substrate so as to control a temperature of the adhesive mass, so as to at least one of bond the first and second substrates in alignment with one another, or achieve a sufficiently planar adhesive interface between the first and second substrates.

Abstract: A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.

Abstract: An optical semiconductor package has a base material that includes a principal surface, an optical semiconductor element that is located on the principal surface of the base material to project or receive light, and an optical transparency sealing layer that seals the optical semiconductor element while covering the principal surface of the base material. An air gap having a shape surrounding an optical axis of the optical semiconductor element is provided in the optical transparency sealing layer such that the light is reflected by an interface of a portion corresponding to an inner circumferential surface of the air gap in an interface formed by the air gap and the optical transparency sealing layer.

Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.

Abstract: The present invention relates to an apparatus and a method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures on semiconductor substrates in real-time during epitaxial growth. The method includes either assigning a pre-calculated 3D-model from a data base to the sample or calculating a 3D-model of the sample using the measured optical reflectances of the plurality of different measuring positions of the sample, where calculation or pre-calculation of the 3D-model includes calculation of the interference effects of light reflected from the front and back interfaces of the nano-structure and calculation of the interference effects due to superposition of neighbouring wave-fronts reflected from the nano-structure area and wave-fronts reflected from the substrate area between the nano-structures.

Abstract: An apparatus for depositing and inspecting an organic light emitting display panel includes a depositor part configured to deposit thin film layers on a panel, the thin film layers including an anode layer, an organic film layer, and a cathode layer, and an inspector part configured to measure spectra of light reflected from the thin film layers, compare the measured spectra to reference spectra, and determine thickness correctness of individual thin film layers.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select the first and second intensities that ensure good anneal temperature uniformity as a function of wafer position. The first and second intensities can also be selected to minimize edge damage or slip generation.

Abstract: The present disclosure provides a semiconductor structure including a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has a first dimension in a first direction and a second dimension in a second direction perpendicular to the first direction, and the first dimension is substantially greater than the second dimension; and each of the dummy active regions has a third dimension in the first direction and a fourth dimension in the second direction, and the third dimension is substantially greater than the fourth dimension. The plurality of dummy active regions are configured such that thermal annealing effect in the dummy region is substantially equal to that of the device region.

Abstract: A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space between a plurality of control plates (81) of a control plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate, while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. A difference in the amount of thermal expansion between the vapor deposition source and the control plate unit is detected and corrected. It is thereby possible to form, at a desired position on a large-sized substrate, the coating film in which edge blur and variations in the edge blur are suppressed.

Abstract: A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.

Abstract: A method of semiconductor processing comprises providing a semiconductor wafer in a processing chamber; feeding at least one tungsten-containing precursor in a gas state into the processing chamber for atomic layer deposition (ALD) of tungsten; feeding at least one reducing chemical in a gas state into the processing chamber; and monitoring a concentration of at least one gaseous byproduct in the chamber; and providing a signal indicating concentration of the at least one gaseous byproduct in the chamber. The byproduct is produced by a reaction between the at least one tungsten-containing precursor and the at least one reducing chemical during the ALD.

Abstract: An LED illumination device (10) having a first LED chip (1) and a second LED chip (2) is described, wherein the first LED chip (1) is suitable to emit radiation having a first emission characteristic (A1) and the second LED chip (2) is suitable to emit radiation having a second emission characteristic (A2). The first emission characteristic (A1) and the second emission characteristic (A2) have temperature-dependent changes (?A1T, ?A1T), wherein the temperature-dependent change (?A1T) in the first emission characteristic (A1) and the temperature-dependent change (?A2T) in the second emission characteristic (A2) are, in operation, at least partially compensated for or are synchronised with respect to each other such that the chromaticity co-ordinate remains stable. Furthermore, a method for producing such an illumination device (10) is described.

Abstract: A method for forming a multilayer structure comprises the steps of: depositing a first polymerizable layer on a substrate; applying microwave energy to the polymerizable layer while monitoring at least one property of the layer; and, ending the application of microwave energy when the monitored property indicates that the polymerizable layer has reached a desired degree of cure. The property monitored may be optical, e.g., Raman spectrum, or electrical, e.g., dielectric loss. This process control strategy lowers the overall thermal budget, and is especially suitable for curing polymer films on silicon. The method may be used repetitively to cure multiple layers of polymeric material when a thicker film is needed.

Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

Abstract: A technique is provided which can exactly recognize a chip to be picked up when picking up the chip from a wafer sheet in a process of die bonding a thin chip. A camera is coupled to one end of a lens barrel, an objective lens is attached to an opposite end of the lens barrel, and an image of a main surface of a chip is photographed through the objective lens. A surface-emitting lighting unit, a diffusing plate and a half mirror are internally provided between the lens barrel and the chip. Further, another lens barrel having a coaxial drop lighting function of radiating light to the main surface of the chip along the same optical axis as that of the camera is disposed.

Abstract: An exposure apparatus includes a light emission part 10 generating EUV light by plasma excitation of a predetermined atom, a condenser part 20 condensing the EUV light emitted from the light emission part, an exposure part 30 irradiating a substrate via a mask with the EUV light condensed by the condenser part, a first plasma position monitor 11a detecting the position of an emission point of the EUV light within the light emission part, and a light emission part drive unit 13 adjusting the position of the light emission part. The exposure apparatus determines a first shift amount between the emission point detected by the plasma position monitor and a reference light emission position, and drives the light emission part drive unit according to the first shift amount.

Abstract: A method for manufacturing a P-I-N microcrystalline silicon structure for thin-film solar cells, includes the steps of: (a) forming a P-type layer; (b) forming an I-type layer including a plurality of sub-layers successively stacked on the P-type layer using gas mixtures including fluoride and hydride that have different gas ratios, respectively; and (c) forming an N-type layer on the I-type layer. First, second, and third I-type sub-layers may be formed on the P-type layer using gas mixtures including fluoride and hydride at a first, second, and third gas ratios, respectively. Then, advantageously, the third gas ratio may be larger than the second gas ratio and the second gas ratio may be larger than the first gas ratio, and the first gas ratio may be 8%, the second gas ratio may range between 15% and 35%, and the third gas ratio may range between 35% and 50%.

Abstract: A method for producing a radiation arrangement includes providing a first substrate, arranging a first radiation source or generating first electromagnetic radiation thereon, arranging a first deflection element on the first substrate in a beam path of the first electromagnetic radiation such that the first electromagnetic radiation is deflected in a direction away from the first substrate, providing a second substrate, forming a first coupling-out region in the second substrate at a predefined position, determining an actual position of the first coupling-out region, detecting the deflected first electromagnetic radiation as a result of which a beam path of the deflected first electromagnetic radiation can be determined, aligning the first radiation source and the first deflection element on the first substrate depending on the determined actual position of the first coupling-out region.

Abstract: A method of dicing a semiconductor wafer comprises scribing at least one dielectric layer along dice lanes to remove material from a surface of the wafer using a laser with a pulse-width between 1 picosecond and 1000 picoseconds and with a repetition frequency corresponding to times between pulses shorter than a thermal relaxation time of the material to be scribed. The wafer is then diced through a metal layer and at least partially through a substrate of the semiconductor wafer.

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a multiple photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the multiple photovoltaic cell portion.

Abstract: An SRAM cell structure. In one embodiment, a bit cell first level contacts formed at a first and a second CVdd node, a first and a second CVss node, at a bit line node, at a bit line bar node, at a data node and at a data bar node; and second level contacts formed on each of the first level contacts at the first and second CVdd nodes, the first and second CVss nodes, the bit line node and the bit line bar node; wherein the first level contacts formed at the data node and the data bar node do not have a second level contact formed thereon. In another embodiment, a word line is formed and bit lines and a CVdd and a CVss line are formed overlying the SRAM cell and coupled to the corresponding ones of the nodes. Methods are disclosed for forming the cell structure.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: An apparatus for checking thickness dimensions in a semiconductor wafer (1) during grinding operations includes an optical probe (3) which transmits infrared radiations on the surface (2) being machined of the wafer (1), and detects beams that are reflected by said surface, by an opposite surface (2?) of the wafer and/or by surfaces (2?, 2??) separating different layers in the wafer. The beam of emitted and reflected radiations travels along a path (4) with known and constant discontinuities, in part through the air (15) and in part through a cushion (30) of low flow liquid, which flows with substantially laminar flow. A support and positioning element (7) for the optical probe includes hydraulic ducts (22,25) that generate the liquid cushion. A method for checking the thickness dimensions includes the generation of the liquid cushion at the path along which the beam of emitted and reflected radiations travels.

Abstract: A system and method for driving pixels of an OLED display using a backplane for an active matrix device comprising a substrate arranged to electrically connect to a plurality of semiconductor elements, a plurality of first semiconductor elements mounted on the substrate, each comprising one or more circuit elements configured to drive one or more active elements of the active matrix device, and a plurality of second semiconductor elements mounted on the substrate, each comprising one or more circuit elements configured to control one or more of the first semiconductor elements.

Abstract: Packaging methods, material dispensing methods and apparatuses, and automatic measurement systems are disclosed. In one embodiment, a method of packaging semiconductor devices includes coupling a second die to a top surface of a first die, dispensing a first amount of underfill material between the first die and the second die, and capturing an image of the underfill material. Based on the image captured, a second amount or no additional amount of underfill material is dispensed between the first die and the second die.

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract: In a resin coating which is used in the manufacture of an LED package which is made by covering an LED element with resin that includes fluorescent substance, a light-passing member (43) on which the resin (8) is test coated for light emission characteristic measurement is carried on a light-passing member carrying unit (41), a deviation between a measurement result obtained after the light emission characteristic of the light that the resin (8) emits, when an light source unit (45), which is placed above, emits excitation light which excites the fluorescent substance, and irradiates the excitation light from above to the resin (8) which is coated on the light-passing member (43), is measured and the light emission characteristic prescribed beforehand is obtained, and an appropriate resin coating quantity with which the resin should be coated on the LED element is derived for practical production based on the deviation.

Abstract: Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition.

Abstract: A method is provided including depositing a layer of material on a substrate, during deposition of the material, at a predetermined depth, laterally implanting a first dopant and a second dopant in the material, the second dopant being different from the first dopant, etching the material, during etching, detecting the positions and intensities of the first and second dopants, and calculating lateral homogeneity of the material in situ from the intensities of the first and second dopants.

Abstract: A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.

Abstract: A method of scribing a substrate along a scribeline includes causing a laser beam to impinge on the major surface, the point of impingement of the beam constituting a light spot, the substrate being positioned with respect to the laser beam such that the light spot is disposed proximal to the scribeline. The substrate and laser beam are moved relative to one another, such that the light spot is caused to translate substantially along the scribeline, whereby localized energy is transferred from the laser beam to the substrate along the course of the scribeline. The positioning of the light spot with respect to the scribeline is monitored by imaging a flash of light produced during the relative motion. Image recognition software is used to analyze the image and determine momentary position information. The momentary position information is used to regulate a laser beam position setpoint.

Abstract: A surface inspection apparatus (1) has a stage (5) for supporting a wafer (10) on which predetermined patterns have been formed by exposure using an exposure device (100); an illumination system (20) for irradiating an illuminating light on the surface of the wafer (10) supported by the stage (5); an imaging device (35) for detecting light from the surface of the wafer (10) on which illuminating light has been irradiated, and outputting a detection signal; and an image processing unit (40) for determining the focus state during exposure, on the basis of the detection signal sent from the imaging device (35).

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

Abstract: This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect isolation method includes the steps of: detecting at least a defect formed in thin-film solar cell and acquiring the positions of the defects, and applying a laser light to scribe the outer circumference of the defects according to the positions of the defects so as to form at least an isolation groove having a closed-curve configuration.

Abstract: A laser beam irradiation apparatus includes a laser beam oscillation unit including a pulse laser beam oscillator for oscillating a pulse laser beam and a cycle frequency setting unit for setting the cycle frequency, an acousto-optic deflection unit for deflecting the optical axis of the pulse laser beam oscillated from the laser beam oscillation section, and a control unit for controlling the acousto-optic deflection unit. The control unit outputs a driving pulse signal having a predetermined time width including a pulse width of the pulse laser beam oscillated from the pulse laser beam oscillator to the acousto-optic deflection unit based on the cycle frequency setting signal from the cycle frequency setting section.

Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

Abstract: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.

Abstract: A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on the carrier structure, rather than on the more expensive ceramic substrate. In like manner, other devices, such as sensors and control elements, may be mounted on the carrier structure as well. Because the carrier and substrate structures are formed independent of the encapsulation and other after-formation processes, these structures can be tested prior to encapsulation, thereby avoiding the cost of these processes being applied to inoperative structures.

Abstract: A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting device stack and the substrate, within the light-emitting device stack, and/or between the light-emitting device stack and a metal contact layer in an end-type contact.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: A light emitting apparatus is fabricated by measuring light output of a semiconductor light emitting device, and selectively applying luminous material to the light emitting device based on the measured output of the light emitting device. An amount of luminous material, different compositions of luminous material and/or different doping levels of luminous material may be selectively applied based on the measured output of the light emitting device.