Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: The present invention relates to a photovoltaic module structure 1 and to a method for establishing an electrically conductive connection between two spaced contact layers 4?, 6?, in particular in the photovoltaic module structure 1 according to the invention. The production method is particularly simple and economical and the photovoltaic module structure 1 according to the invention enables a significant gain in efficiency.

Abstract: The invention relates to a serial connection of thin layer solar cells. The aim of the invention is to provide a structuring method which provides a reliable and effective connection, prevents short-circuits and enlarges usable solar cell surfaces. The aim of the invention is achieved according to claims 1 and 14, the solution being suitable for mass production.

Abstract: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.

Abstract: A thin film solar cell includes, on a substrate, a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer, and a second electrode layer including a conductive material that reflects light. The thin film solar cell includes a plurality of unit solar battery cells divided by scribe lines. The second electrode layer and the first electrode layer of the unit solar battery cell adjacent to the second electrode layer are connected in the scribe line formed in the photoelectric conversion layer. The unit solar battery cells are electrically connected in series. The scribe lines on both sides of at least one of the unit solar battery cells are formed such that the unit solar battery cell held between the scribe lines meanders while having fixed width in a predetermined direction and have same shapes that overlap when the scribe lines translate in the predetermined direction.

Abstract: Disclosed is a method for producing and for connecting in series photovoltaic elements to form a solar module, and a solar module.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

Abstract: A heat sink has a number of fixing frames. The fixing frames are soldered with of solar cell devices. And, the fixing frames are defined with insulating ink. Hence, the fixing frames can be used for insulating and locating the of a solar cell devices. Besides, with the insulating ink, solar cells of the solar cell devices are prevented from being contacted with the heat sink. As a result, a good electrical property is obtained on assembling and using the solar cell devices.

Abstract: A solar cell includes a substrate of a first conductive type having at least one via hole; an emitter layer of a second conductive type opposite to the first conductive type; and at least one first electrode positioned from a first surface of the substrate to the at least one via hole, and at least one first electrode current collector positioned from the at least one via hole to a second surface of the substrate, wherein the at least one via hole has a radius of about 10 ?m to about 40 ?m, and at least one of a portion of the at least one first electrode and a portion of the at least one electrode current collector, in the at least one via hole, includes at least one cavity.

Abstract: A solar battery module includes a first cell line formed by arraying a plurality of solar battery cells in a first direction, a first inter-cell lead that connects the solar battery cells in the first cell line in an array direction, a second cell line formed by arraying the solar battery cells in parallel to the first cell line, a second inter-cell lead that connects the solar battery cells forming the second cell line in an array direction, and an inter-line lead that extends in a direction perpendicular to the first direction and electrically connects the first inter-cell lead and the second inter-cell lead, in which at least a portion of the inter-line lead overlaps the solar battery cell.

Abstract: The invention permits a plurality of strips of resin adhesive film having a desired width and unwound from a single feeding reel to be simultaneously pasted on a solar cell. For this purpose, the invention comprises the steps of: unwinding a resin adhesive film sheet from a reel on which the resin adhesive film sheet is wound; splitting the unwound resin adhesive film into two or more film strips in correspondence to lengths of wiring material to bond; pasting the strips of resin adhesive film on an electrode of the solar cell; and placing the individual lengths of wiring material on the electrode of the solar cell having the plural strips of resin adhesive film pasted thereon and thermally setting the resin adhesive film by heating so as to fix together the electrode of the solar cell and the wiring material.

Abstract: In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; and depositing a top-contact layer over the a photovoltaic-absorber layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact.

Abstract: For forming the separating lines, (5, 6, 7) which are produced in the functional layers (2, 3, 4) deposited on a transparent substrate (1) during manufacture of a photovoltaic module with series-connected cells (C1, C2, . . . ), there are used laser scanners (8) whose laser beam (14) produces in the field (17) scanned thereby a plurality of adjacent separating line sections (18) in the functional layer (2, 3, 4). The laser scanners (8) are then moved relative to the coated substrate (1) in the direction (Y) of the separating lines (5, 6, 7) by a distance corresponding at the most to the length (L) of the scanned field (17) to thereby form continuous separating lines (5, 6, 7) through mutually flush separating line sections (18).

Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

Abstract: An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.

Abstract: A plasma vapor deposition system for making multi-junction silicon thin film solar cell modules and panels including a flexible substrate disposed about and removably supported by a dual-walled cylindrical substrate support for axially rotating the flexible substrate about its longitudinal axis, the dual-walled cylindrical substrate support comprising an inner wall spaced apart by an outer wall to define a coaxial cavity; a plasma vapor deposition torch located substantially adjacent to the flexible substrate for depositing at least one thin film material layer on an outer surface of the flexible substrate; and a traversing platform for supporting the rotatable substrate support relative to the plasma vapor deposition torch, the rotatable substrate support being traversed along its longitudinal axis by the traversing platform.

Abstract: A method of connecting two solar cells is disclosed. In one embodiment, the method comprises gripping an interconnect with a head of positioning device, heating the interconnect with the head of the positioning device to between two predetermined temperatures, where one is higher than the other, positioning the interconnect so as to overlay two adjacent solar cells, coupling the interconnect to each of the two adjacent solar cells, and releasing the interconnect from the head.

Abstract: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.

Abstract: Disclosed is a solar cell module wherein peeling between a substrate and a photoelectric conversion layer is not easily generated. In the solar cell module, a plurality of photoelectric conversion elements, each of which has a transparent electrode (12), a photoelectric conversion unit (14), and a rear surface electrode (16) sequentially stacked on a transparent substrate (10), are connected in series, and the solar cell module is provided with a slit (S2) formed by removing the transparent electrode (12) to a first width (D1), and a slit (S5), which overlaps the region where the transparent electrode (12) has been removed, and which has the photoelectric conversion unit (14) and the rear surface electrode (16) removed therefrom to a second width (D2) that is equal to or less than the first width (D1). On the surface of the transparent substrate (10) in the slit (S2), recesses and protrusions (34) are provided.

Abstract: A method of making a monolithic photovoltaic module having a flexible substrate is described. The method includes the following steps. First, a flexible substrate is provided, and a first adhesive layer, a metal layer, and a second adhesive layer are formed thereon. The second adhesive layer, the metal layer and the first adhesive layer are etched with at least one etching paste. In addition, a patterned semiconductor body layer patterned by an etching paste or a laser scribing is formed thereon. Furthermore, transparent top electrodes patterned by an etching paste or a cold laser scribing are formed on the patterned semiconductor body layer.

Abstract: A solar cell module with current control and a method of fabricating the same are provided. A plurality of rectifying diodes is formed simultaneously in series at a bus line formation area when solar cell units are fabricated. The rectifying diodes formed in series at the bus line formation area enables the solar cell to have the efficacy of current rectification when being shaded, and the output power of the solar cell is stabilized.

Abstract: For forming the separating lines, (5, 6, 7) which are produced in the functional layers (2, 3, 4) deposited on a transparent substrate (1) during manufacture of a photo-voltaic module with series-connected cells (C1, C2, . . . ), at least one laser scanner (8) is used whose laser beam (14) produces in the field (17) scanned thereby a plurality of separating line sections (18, 18?) disposed side by side in the functional layer (2, 3, 4). The laser scanner (8) is moved relative to the coated substrate (1) in the direction (Y) of the separating lines (5, 6, 7), thereby giving rise to an overlap (36) of adjacent fields (17, 17?). At the same time, the laser scanner (8) produces separating line sections (18, 18?) which are of hook-shaped configuration at least at one end (32) so as to form a catching area in which the ends (31, 32) of the separating line sections (18, 18?) of adjacent fields (17, 17?) overlap.

Abstract: A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle ? in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In some embodiments, photovoltaic materials can be scribed using picosecond pulse widths and certain wavelength and laser fluence levels.

Abstract: Methods and devices are provided for improved roofing devices. In one embodiment of the present invention, a photovoltaic roofing assembly is provided that comprises of a roofing membrane and a plurality of photovoltaic cells supported by the roofing membrane. The photovoltaic cells may be lightweight, flexible cells formed on a lightweight foil and disposed as a layer on top of the roofing membrane. The roofing assembly may include at least one flexible encapsulant film that protects the plurality of photovoltaic cells from environmental exposure damage, wherein the encapsulant film is formed using a non-vacuum process. Optionally, the process may be a lamination process. In other embodiments, the process is a non-vacuum, non-lamination process. The resulting roofing membrane and the photovoltaic cells are constructed to be rolled up in lengths suitable for being transported to a building site for unrolling and being affixed to a roof structure.

Abstract: An increased efficiency Concentrator Photovoltaic System having a plurality of solar cells laterally spaced from each other on a substrate panel. The solar cells are mounted on electrically conductive areas of an otherwise non-conductive top surface of the substrate with each cell isolated from another by a non-conductive area. The individual cells are connected using ribbons or wires, between the front contact of the solar cells to the conductive area of another cell to form a circuit connecting the cells in a desired configuration. A plurality of tubular enclosures for concentrating light on the solar cells are mounted directly above the solar cells.

Abstract: Convey means for pitch-feeding the semiconductor cell to which the conductive tapes have been attached, lead wire processing means for forming-processing the lead wire, provisional pressure-bonding means which is provided at a part opposed to the semiconductor cell that is pitch-fed, holds the lead wires which are forming-processed, repeats provisional pressure-bonding of the lead wires to the conductive tapes provided on the upper surface and lower surface of the semiconductor cell that is pitch-fed, and alternately connects the upper surfaces and lower surfaces of the neighboring semiconductor cells, and main pressure-bonding means which is disposed on a downstream side of the provisional pressure-bonding means in a direction of conveyance of the semiconductor cell, and which mainly pressure-bonds, simultaneously, the paired upper and lower lead wires which have been provisionally pressure-bonded to the upper surface and lower surface of the semiconductor cell.

Abstract: An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

Abstract: The invention relates to a photovoltaic device comprising at least one photovoltaic cell (60) provided with active thin layers (15) deposited on a substrate (10), said active layers being unsegmented, and at least one static converter (50) associated with each photovoltaic cell (60). Each photovoltaic cell (60) supplies an electrical power with a maximum current (Icc) and a nominal voltage (Vp), and each static converter (50) is adapted in such a way as to transmit the electrical power supplied by the photovoltaic cell towards a load (100), reducing the transmitted current and increasing the transmitted voltage. The laser segmentations of the photovoltaic cells are thus limited, or completely eliminated, on a same panel. The yield of the photovoltaic device production is thereby improved and the dead surfaces are limited.

Abstract: Provided is a photovoltaic panel in which a plurality of photovoltaic cells is electrically connected in series, and in which at least one of the photovoltaic cells is set as a non-use cell which is not electrically connected to the other photovoltaic cells and not used.

Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.

Abstract: An optoelectronic device, including a semiconductor body having a surface to receive photons and a plurality of doped regions of opposite doping polarities, the doped regions extending substantially from the surface of the semiconductor body and into the semiconductor body, and being arranged in one or more pairs of opposite doping polarities such that each pair of doped regions forms a corresponding space charge region having a corresponding electric field therein, the space charge region extending substantially from the surface of the semiconductor body and into the semiconductor body such that photons entering the semiconductor body through the surface and travelling along paths within the space charge region generate electron-hole pairs in the space charge region that are separated in opposing directions substantially orthogonal to the photon paths by the electric field and collected by the corresponding pair of doped regions, thereby providing an electrical current to be conducted from the device.

Abstract: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array. The thin film photoelectric conversion module further comprises a plurality of first electrode rows extending along a current flow direction and a resistive material electrically connected to adjacent two of the first electrode rows, wherein the resistive material has an electrical resistivity no less than 10?9 ohm-cm, wherein when the resistive material is a material different from that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows at least partially connected, and when the resistive material is a material the same as that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows partially connected.

Abstract: A laminated body, comprising: a supporting body having a concave-convex surface; and a semiconductor layer laminated on a surface of the supporting body, wherein a part of the supporting body includes a layer thickness measurement portion for optically measuring a layer thickness of the semiconductor layer, and the layer thickness measurement portion includes a reduced surface roughness region whose surface roughness is smaller than that of the concave-convex surface.

Abstract: A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n?1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

Abstract: The invention provides a method of manufacturing a monolithic thin-film photovoltaic cell or module with enhanced output voltage as high as 100 V or higher in a single microelectronic process without connecting in series a plurality of premanufactured solar cells. The method consists of forming a plurality of adjacent individual TSCs arranged on a common transparent substrate in the longitudinal direction of the substrate. Each TSC consists of a pair of PV cells having PIN and NIP structures, respectively, with substantially coplanar position of a P-doped layer of one of the cells with respect to an N-doped layer of another cell of the pair. A tunnel junction is formed between the cells of the pair by overlapping P-doped and N-doped layers in the area near the common transparent substrate.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

Abstract: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.

Abstract: A photovoltaic module may include an electrical connection assembly with increased corrosion protection.

Abstract: The invention pertains to a process for manufacturing a solar cell foil comprising the steps of: providing an etchable temporary substrate applying a front electrode of a transparent conductive oxide (TCO) onto the temporary substrate applying a photovoltaic layer onto the TCO layer applying a back electrode layer applying a permanent carrier ensuring that the front electrode and the back electrode are electrically connected in an interconnect to establish a series connection, the front and the back electrode each being interrupted by front and back groove, respectively, at different sides of the interconnect in any one of the preceding steps providing an etch resist on the non-TCO side of the temporary substrate at least at the location of the interconnect, and at least not at the entire location of the front groove selectively removing the temporary substrate where it is not covered with etch resist.

Abstract: On a substrate is formed a transparent and conductive front electrode layer, on which is formed a photoelectric conversion unit that generates an electric power by a light. On the photoelectric conversion unit is formed a transparent and conductive film, on which a silver-containing back electrode layer. On the back electrode layer is formed further a back electrode reinforcing film formed by UV-irradiation of, or by heating of, or by heating after UV-irradiation of a layer that is obtained by applying a composition for reinforcing film on the back electrode layer with a wet coating method. Provided are a solar cell module with small deterioration of power generation efficiency even under a high humidity environment and with stable performance for a long period of time and a method that can produce the solar cell module more cheaply.

Abstract: A solar cell module includes: a plurality of photovoltaic cells including a layered body in which a first electrode layer, a power generation layer, and a second electrode layer are layered in series, the photovoltaic cells being electrically connected with each other in series; a scribe line separating the photovoltaic cells that are adjacent to each other in the photovoltaic cells; a scribe hole that is formed so as to penetrate through the power generation layer and the second electrode layer; and a bypass pathway that is formed of a shunt region, the shunt region being generated at a periphery of the scribe hole.

Abstract: A laminated module or panel of solar cells and a laminating method for making same comprise a top layer of melt flowable optically transparent molecularly flexible thermoplastic and a rear sheet of melt flowable insulating molecularly flexible thermoplastic both melt flowing at a temperature between about 80° C. and 250° C. and having a low glass transition temperature. Solar cells are encapsulated by melt flowing the top layer and rear sheet, and electrical connections are provided between front and back contacts thereof. Light passing through the transparent top layer impinges upon the solar cells and the laminated module exhibits sufficient flexural modulus without cross-linking chemical curing. Electrical connections may be provided by melt flowable electrically conductive molecularly flexible thermoplastic adhesive or by metal strips or by both.

Abstract: The invention provides a method of manufacturing a monolithic thin-film photovoltaic cell or module with enhanced output voltage as high as 100 V or higher in a single microelectronic process without connecting in series a plurality of premanufactured solar cells. The method consists of forming a plurality of adjacent individual TSCs arranged on a common transparent substrate in the longitudinal direction of the substrate. Each TSC consists of a pair of PV cells having PIN and NIP structures, respectively, with substantially coplanar position of a P-doped layer of one of the cells with respect to an N-doped layer of another cell of the pair. A tunnel junction is formed between the cells of the pair by overlapping P-doped and N-doped layers in the area near the common transparent substrate.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

Abstract: The present invention relates to a method of fabricating an organic photovoltaic device with improved power conversion efficiency by reducing lateral contribution of series resistance between subcells through active area partitioning by introducing a patterned structure of insulating partitioning walls inside the device. According to the method of the present invention, since the lateral contribution of series resistance between the partitioned subcells is minimized and each subcell works independently, there is no interference phenomenon against the current output of each subcells. As such, the function of a charge extraction layer with high conductivity can be maximized. Thus, the method of the present invention can be effectively used in the fabrication and development of a next-generation large area organic thin layer photovoltaic cell device.

Abstract: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.