Abstract: A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.

Abstract: A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer.

Abstract: A photovoltaic structure including a nanocone-based three-dimensional interdigitated p-n junction is provided in the present invention. The three-dimensional p-n junction is at the interface between n-type oxide semiconductor nanocones and a p-type semiconductor material that functions as a matrix embedding the nanocones. The nanocone-based three-dimensional p-n junction allows efficient minority carriers being extracted from photo-absorber and crossing across the p-n junction, and generates completely-depleted regions throughout the nanocones and the matrix around the nanocones for efficient charge collection. Further, the bandgap energies of the p-doped semiconductor material can be tuned to match the solar light spectrum by mixing related elements. Further, the high temperature pulses can be used to remove defects in the junction interfaces and sintering nanoparticle matrix.

Abstract: The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: A photoelectric conversion device with high open-circuit voltage and high conversion efficiency is provided. A photoelectric conversion device including a p-n junction is formed by stacking a first semiconductor layer having p-type conductivity, a second semiconductor layer having p-type conductivity, and a third semiconductor layer having n-type conductivity between a pair of electrodes. The first semiconductor layer is a compound semiconductor layer, and the second semiconductor layer is formed using an organic compound and an inorganic compound. A material having a high hole-transport property is used as the organic compound, and a transition metal oxide having an electron-accepting property is used as the inorganic compound.

Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Abstract: This disclosure provides polymer electrolytes for dye-sensitized solar cells that can not only prevent electrolytes from leaking, but also exhibit a higher solar conversion efficiency when compared with conventional polymer electrolytes, whereby the polymer electrolytes are applicable to a process for manufacturing dye-sensitized solar cells with a large surface area or flexible dye-sensitized solar cells, and methods for manufacturing modules of dye-sensitized solar cells using the same.

Abstract: Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.

Abstract: A method for forming a thin film photovoltaic device is provided. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A chalcopyrite material is formed overlying the first electrode layer. In a specific embodiment, the chalcopyrite material comprises a copper poor copper indium disulfide region. The copper poor copper indium disulfide region having an atomic ratio of Cu:In of about 0.95 and less. The method includes compensating the copper poor copper indium disulfide region using a sodium species to cause the chalcopyrite material to change from an n-type characteristic to a p-type characteristic. The method includes forming a window layer overlying the chalcopyrite material and forming a second electrode layer overlying the window layer.

Abstract: A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern.

Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride <1 100> or <11 20> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm?2, which will find important applications in future electronic and optoelectronic devices.

Abstract: The present invention provides a process for preparing a photoanode of a dye-sensitized solar cell (DSSC) by pressure swing impregnation, which includes impregnating a metal oxide layer on a conductive substrate in a photosensitizing dye solution in a vessel; introducing a pressurized inert gas into the vessel to maintain a first pressure therein for a period of time, wherein the first pressure can be lower or higher than the critical pressure of the inert gas and the solution is expanded by the inert gas; further pressurizing the vessel with the inert gas and maintaining at a second pressure higher than the first pressure for a period of time, wherein the inert gas becomes sub-critical or supercritical fluid and dissolves more in the solution, creating an anti-solvent effect, so that the photosensitizing dye further deposits onto the metal oxide layer due to the anti-solvent effect.

Abstract: Provided are a newly developed dye-sensitizing type photoelectric conversion element employing a highly durable sensitizing dye, exhibiting high photoelectric conversion efficiency, and a solar cell fitted with the photoelectric conversion element. Also disclosed is a photoelectric conversion element comprising a compound represented by Formula (1) between a pair of facing electrodes.

Abstract: Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer (e.g., a cadmium sulfide layer) and a second layer (e.g., a mixed phase layer). The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.

Abstract: An organic photovoltaic cell (10) of the present invention includes an active layer (40) containing an organic compound and being provided between a pair of electrodes of a first electrode (32) and a second electrode (34), and because the active layer contains metallic oxide nano-particles wearing a carbon material on its surface, the organic photovoltaic cell can be manufactured from an inexpensive material.

Abstract: A photoelectric conversion element having a pair of electrodes, and a semiconductor layer comprising a semiconductor carrying a dye and an electrolyte layer is disclosed.

Abstract: Disclosed embodiments provide a solution-based process for producing useful materials, such as semiconductor materials. One disclosed embodiment comprises providing at least a first reactant and a second reactant in solution and applying the solution to a substrate. The as-deposited material is thermally annealed to form desired compounds. Thermal annealing may be conducted under vacuum; under an inert atmosphere; or under a reducing environment. The method may involve using metal and chalcogen precursor compounds. One example of a metal precursor compound is a metal halide. Examples of suitable chalcogen precursor compounds include a chalcogen powder, a chalcogen halide, a chalcogen oxide, a chalcogen urea, a chalcogen or dichalcogen comprising organic ligands, or combinations thereof. Certain disclosed embodiments concern a method for making a solar cell from I-III-VI semiconductors.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The multilayered structure is subjected to a plurality of sulfur bearing entities during a rapid thermal process to form an absorber material comprising a copper entity, an indium entity, and a sulfur entity. The rapid thermal process uses a ramp time ranging from about 10 Degrees Celsius/second to about 50 Degrees Celsius/second. In a specific embodiment, the first transparent electrode layer is maintained to a sheet resistance of less than or equal to about 10 Ohms/square centimeters and an optical transmission of 90 percent and greater.

Abstract: A method for producing an organometallic layer includes providing a substrate having at least a layer with atoms of an oxidizable metal on its surface. The surface is exposed to a fluid that includes organic molecules having at least two functional groups that contain elements of main group VI such that the atoms of the oxidizable metal form a bond with the organic molecules. By consumption of the atoms of oxidizable metal and of the organic molecules, the organometallic layer is formed on the substrate at locations on the surface of the substrate where the atoms of oxizable are disposed, the atoms of oxizable metal being incorporated into the organometallic layer. A thickness of the organometallic layer is determined by a duration of the exposing, a thickness of the layer including the atoms of the oxidizable metal, and the number of organic molecules in the fluid.

Abstract: A light-trapping layer is integrated into a thin-film solar cell. It is integrated as a light-inlet layer, an intermediate layer or a shaded layer with nano-particles embedded in a transparent or non-transparent conductive film. Thus, light stays longer in an absorption layer with photocurrent increased; defects of interface between the absorption layer and the nano-material are decreased; anti-reflective effect to inlet light is enhanced; and a good integrity and a good reliability for long-time light-shining are obtained.

Abstract: An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprising: a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent, and wherein the metal oxide layer is formed from a metal oxide particle dispersion liquid.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1.

Abstract: A dye-sensitized solar cell includes a base material that functions as an electrode, has flexibility, and has a porous layer, containing a dye-sensitizer-supported fine particle of a metal oxide semiconductor on one surface thereof. A counter electrode base material is arranged to oppose the base material for dye sensitized solar cell, functions as an electrode, and has flexibility. A solid electrolyte layer is provided between the base material for dye-sensitized solar cell and the counter electrode base material and contacts the porous layer. Among the base materials, at least one has transparency; and at least one has an insulating layer provided on a surface thereof. The insulating layer is provided in a region a region where the porous layer is formed, and where the base materials are opposed to each other. The insulating layer has an external communication portion that leads from an inside of the porous layer-forming region to outside.

Abstract: A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.

Abstract: A main object of the invention is to provide an organic thin-film solar cell that offers high performance and is easy to form. To achieve the object, the invention provides an organic thin-film solar cell comprising: a metal electrode layer having an aluminum layer on a surface thereof, an electron extraction layer which is a zinc oxide layer formed on the aluminum layer of the metal electrode layer, a photoelectric conversion layer formed on the electron extraction layer, and a transparent electrode layer formed on the photoelectric conversion layer, wherein the electron extraction layer has a concentration gradient in which the content of oxygen atoms in the electron extraction layer tends to increase from the metal electrode layer side to the photoelectric conversion layer.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.

Abstract: To provide a transparent conductive substrate for a solar cell, which has a haze factor at the same level of conventional transparent conductive substrates for a solar cell, and a small amount of absorbed light at a wavelength region of about 400 nm by a tin oxide layer. A transparent conductive substrate for a solar cell, comprising a substrate and at least a silicon oxide layer and a tin oxide layer formed thereon in this order, wherein on the silicon oxide layer between the silicon oxide layer and the tin oxide layer, discontinuous ridge parts consisting of tin oxide and a crystalline thin layer consisting of an oxide containing substantially no tin oxide are formed.

Abstract: Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.

Abstract: Featured are a non-planar curved dye-sensitized solar cell and a method of manufacturing such a solar cell. In particular aspects, such methods include preparing two curved substrates, forming a first curved conductive substrate for a working electrode and a second curved conductive substrate for a counter electrode, coating a metal electrode and a protection film on each of the first and second curved conductive substrates, forming the working electrode by coating a semiconductor oxide electrode film on a concave surface of the first curved conductive substrate and by adsorbing a dye in the semiconductor oxide electrode film, forming the counter electrode by coating a catalytic electrode on a convex surface of the second curved conductive substrate, and joining the working electrode with the counter electrode and injecting an electrolyte in between the working electrode and the counter electrode.

Abstract: This invention relates to the field of dye-sensitized solar cells and discloses a method for reducing the temperature necessary for sintering the metal oxide paste coating the electrode.

Abstract: A semiconductor oxide ink composition, a method of manufacturing the composition, and a method of manufacturing a photoelectric conversion element are provided. The semiconductor oxide ink composition for inkjet printing comprises a semiconductor oxide and a solvent, wherein the semiconductor oxide comprises 0.1 to 20 parts by weight relative to 100 parts by weight of the total composition.

Abstract: A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.

Abstract: A photoelectric conversion device and a method for making same are provided wherein a porous photoelectrode is prevented from dissolution in an electrolyte, a surface plasmon resonance effect can be well obtained, and a drastic improvement in photoelectric conversion efficiency can be attained. In a photoelectric conversion device having a structure wherein an electrolyte layer (6) is filled between a porous photoelectrode (3) formed on a transparent substrate (1) and a counter electrode (4), the porous photoelectrode (3) is constituted of metal/metal oxide fine particles (7) including a core made of a metal and a shell surrounding the core and made of a metal oxide. In a dye-sensitized photoelectric conversion device, a sensitizing dye (8) is adsorbed on the surface of the porous photoelectrode (3).

Abstract: A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Abstract: A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.

Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1?xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1?xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1?xMgxO window layer.

Abstract: A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.

Abstract: A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

Abstract: A photo-chemical solar cell with nanoneedle electrode and a method manufacturing the same includes at least a working electrode, a counter electrode, an electrolyte layer and a photosensitized dye layer. The working electrode is an nanoneedle electrode formed from an nanoneedle semiconductor layer, wherein the nanoneedle semiconductor layer is prepared by sol-gel method at a low temperature to increase the specific surface area, adsorb more dye, increase the conductive ratio of the electrode, and thus improve the photo-current and the conversion efficiency.

Abstract: The present invention pertains to a process for producing a photoelectric conversion device comprising a dye-sensitized metal oxide semiconductor which is treated with an essentially transparent hydroxamic acid or an essentially transparent salt thereof. The invention also relates to a photoelectric conversion device obtainable by the process of the invention and to a photoelectric cell, especially a solar cell, comprising the photoelectric conversion device. Moreover, the invention relates to the use of an essentially transparent hydroxamic acid or an essentially transparent salt thereof for enhancing the energy conversion efficiency ? of dye-sensitized photoelectric conversion devices.