Abstract: The invention relates to a method for the preparation of different molecularly imprinted polzmers for recognition of a target molecule by providing particles, frits or monoliths having initiator confined to the surface thereof in separate compartments, adding different monomer mixtures that may contain a template molecule to each compartment, polymerising said mixtures and finally removing the template and excess monomer(S) from the compartments. The invention also relates to a device containing different molecularly imprinted polymers for recognition of a target molecule.

Abstract: A method for producing a photoelectric conversion device comprising a conductive support and a photosensitive layer containing a semiconductor fine particle on which a dye is adsorbed, wherein the semiconductor fine particle is treated with a compound represented by the following general formula (I): wherein X represents an oxygen atom, a sulfur atom, a selenium atom or NY, in which Y represents a hydrogen atom, an aliphatic hydrocarbon group, a hydroxyl group or an alkoxy group; R1, R2, R3 and R4 independently represent a hydrogen atom, an aliphatic hydrocarbon group, an aryl group, a heterocyclic group, —N(R5)(R6), —C(═O)R7, —C(═S)R8, —SO2R9 or —OR10; R5 and R6 independently have the same meaning as the R1, R2, R3 and R4; R7, R8 and R9 independently represent a hydrogen atom, an aliphatic hydrocarbon group, an aryl group, a heterocyclic group, —N(R5)(R6), —OR10 or —SR11; and R10 and R11 independently represent a hydrogen atom or an

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon layer is taken care of by the amorphous interface layer.

Abstract: A method of making a photovoltaic cell includes contacting a cross-linking agent with semiconductor particles, and incorporating the semiconductor particles into the photovoltaic cell.

Abstract: Disclosed is a method of producing a photo device containing a layer of nanometer sized particles and a conducting polymer in solid sate, wherein the layer is made by mixing the nanometer sized particles in colloid with precursor polyparaphenylenevinylene or a derivative thereof and wherein the nanometer sized particle is selected from the group consisting of TiO2, ZnO, ZrO2 and SnO2 and the layer is heated to a temperature during a period of time.

Abstract: A semiconductor structure comprises a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a dielectric resonator contacting the monocrystalline compound semiconductor material.

Abstract: Amorphous metal oxide thin film is produced by removing through oxygen plasma treatment the organic component from an organics/metal oxide composite thin film having thoroughly dispersed therein such organic component at molecular scale. This ensures production of amorphous metal oxide thin film with low density and excellent thickness precision.

Abstract: The present invention provides semiconductor structures and methods for forming semiconductor structures which include monocrystalline oxide films exhibiting both high dielectric constants and low leakage current densities. In accordance with various aspects of the invention, a semiconductor structure includes a monocrystalline semiconductor substrate and one or more stoichiometrically graduated monocrystalline oxide layers. The stoichiometrically graduated monocrystalline oxide layer may include a perovskite material, such as an alkaline-earth metal titanate. Semiconductor devices fabricated in accordance with aspects of the present invention exhibit a high dielectric constant as well as a reduced leakage current density.

Abstract: A dye-sensitized solar cell comprising a porous semiconductor layer in which a dye is adsorbed and an electrolyte which are sandwiched between a transparent conductive film formed on a surface of a transparent substrate and a conductive substrate, wherein the electrolyte is retained in a crosslinked polymer compound.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a complaint substrate includes first growing a monocrystalline binary metal oxide material layer (14) on a substrate (12). The binary metal oxide material layer (14) is lattice matched to both the underlying substrate (12) and the overlying monocrystalline material layer (16).

Abstract: A high quality semiconductor structure includes a monocrystalline substrate and a perovskite stack overlying the substrate. The perovskite stack may be formed of a first accommodating layer formed of a first perovskite oxide material having a first lattice constant. A second accommodating layer is formed on the first accommodating layer. The second accommodating layer is formed of a second perovskite oxide material having a second lattice constant which is different from the first lattice constant of the first accommodating layer. A monocrystalline material layer is formed overlying the second accommodating layer. A strain is effected at the interface between the perovskite stack and the substrate, at the interface between the perovskite stack and the monocrystalline material layer and/or at the interface between the first accommodating layer and the second accommodating layer. The strain reduces defects in the monocrystalline material layer and results in reduced Schottky leakage current.

Abstract: A dye-sensitizing solar cell comprising: a first substrate whose surface is at least conductive; a second substrate on which a conductive layer is formed, the second substrate being transparent, the first and second substrates being spaced by a distance with the conductive surfaces of the first and second substrates opposite to each other; a semiconductor layer having a dye adsorbed thereon, the semiconductor layer being formed on one of the conductive surfaces; a glass frit for sealing peripheral edges of the first and second substrates; and a redox electrolyte which is filled between the first and second substrates.

Abstract: A photovoltaic device includes a transparent, electrically conductive top electrode which functions as an anti-reflective layer. The thickness of this layer is selected to establish a three-quarter &lgr; anti-reflective condition. Use of this layer allows for the manufacture of a gridless photovoltaic device having an enhanced overall efficiency.

Abstract: The present invention relates to a novel zinc oxide thin film having hydrogen (H) and gallium (Ga) dopants. Advantageously, the activation temperature is low. The co-doped zinc oxide is highly conductive, transparent, chemically stable, easily deposited on a variety of substrates, including flexible or plastic substrates, and is well suited for electrical or optical applications. By co-doping with two impurities, both sides of the zinc oxide lattice contribute to the film conductivity resulting in high electron concentration and high mobility. The co-doped zinc oxide thin film has an increased Fermi level and a reduced work function that is less than 3 eV. The co-doped zinc oxide is crystal clear and transparent even when grown at relatively low processing temperatures. In another preferred embodiment of the present invention, a novel low-temperature activation indium tin oxide (ITO) thin film comprising tin oxide co-doped with indium (In) and hydrogen is disclosed.

Abstract: Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.

Abstract: A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor substrate, forming an interlayer insulating layer on the semiconductor substrate, forming a contact hole in the interlayer insulating layer, forming a plug recessed inside of the contact hole, forming an ohmic contact layer on the plug, depositing a La layer or a LaN layer on the ohmic contact layer, performing a nitridation process by a plasma treatment process to form a LaN diffusion barrier layer on the ohmic contact layer and sequentially forming a bottom electrode, a BLT ((BixLay)Ti3O12) dielectric layer and a top electrode on the entire structure.

Abstract: A semiconductor luminescent element includes: a base substrate; a ZnO luminescent layer formed on the base substrate; and a ZnO buffer layer doped with an impurity and formed between the base substrate and the ZnO luminescent layer.

Abstract: A description is given of a photovoltaic module (1) in the form of a laminate, which as the core layer exhibits a solar cell system (2) and encapsulation materials (3, 3′) applied on both sides of the latter. According to the invention, at least one encapsulation material layer (3′) consists of a sealing layer (4′) and a barrier layer (6), which consists of a plastic film or a plastic film composite, and on which an inorganic oxide layer (7) separated out to the vapor phase is present.

Abstract: A photoelectric conversion device having a photosensitive layer comprising semiconductor particles is disclosed, in which the semiconductor particles are obtained from a metal hydroxide gel or a precursor thereof present in a hydrophilic solvent. Also disclosed in a photoelectric cell including the photoelectric conversion device.

Abstract: A method of manufacturing a structure with pores which are formed by anodic oxidation and whose layout. pitch, position, direction, shape and the like can be controlled. The method includes the steps of: disposing a lamination film on a substrate, the lamination film being made of insulating layers and a layer to be anodically oxidized and containing aluminum as a main composition; and performing anodic oxidation starting from an end surface of the lamination film to form a plurality of pores having an axis substantially parallel to a surface of the substrate, wherein the layer to be anodically oxidized is sandwiched between the insulating layers, and a projected pattern substantially parallel to the axis of the pore is formed on at least one of the insulating layers at positions between the pores.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer(24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

Abstract: A solar cell device (2) is formed into a laminated structure by providing a transparent oxide electrode (12) on the surface of an insulating substrate (10) which is a transparent glass substrate, providing a surface treatment layer (14) by performing oxidative plasma treatment on the surface of the transparent oxide electrode (12), providing a silicon nitride film (16) on the surface treatment layer (14), and laminating a p-type semiconductor layer (18), a buffer layer (20), an intrinsic semiconductor layer (22), an n-type semiconductor layer (24), and a metal electrode (26) on the silicon nitride film (16) in that order. Thereby, the surface of the transparent oxide electrode (12) is chemically stabilized by the surface treatment layer (14), resulting in improved open circuit voltage.

Abstract: An indium layer and a copper layer, and whenever necessary, a gallium layer or a gallium-alloy layer, are laminated on an electrode film formed on one of the surfaces of a substrate to form a metallic film. The metallic film is then subjected to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of “CuInS2 or CuInSe2” or “Cu(In, Ga)S2 or Cu(In, Ga)Se2”. This p-type semiconductor layer is subjected to KCN treatment, for removing impurities such as copper sulfide, copper selenide, etc., by a KCN solution, and an n-type semiconductor layer is formed on this p-type semiconductor layer to form a solar cell. In this instance, the indium layer is formed under heating, or is heat-treated by heat-treatment while the surface of the indium layer is exposed.

Abstract: A dye-sensitization-type photoelectric conversion element comprising a semiconductor and a dye adhering onto a surface of the semiconductor, which semiconductor is predominantly comprised of brookite-type titanium oxide. The dye-sensitimation-type photoelectric conversion element is preferably made of a titanium oxide sol predominantly comprising brookite-type titanium oxide, produced by a process comprising a step of hydrolyzing titanium tetrachloride or titanium trichloride.

Abstract: It is to provide an essentially transparent solar cell of high efficiency that can be used by accumulating with a display device to generate electricity simultaneously with utilization of the display function, a self-power-supply display device comprising the same, and a process for producing the solar cell. The solar cell comprises at least a transparent conductive substrate having thereon a photoconductor layer that is transparent to a visible ray and has an absorbance of 0.8 or less at a wavelength of from 400 to 800 nm, and a transparent conductive electrode in this order. An embodiment, in which the photoconductor layer contains at least one element selected from Group IIIA elements and at least one element selected from Group VA elements in the Periodic Table, and an embodiment, in which the photoconductor layer contains a metallic oxide semiconductor, are preferred.

Abstract: A photoelectric conversion element responsive to a desired conversion efficiency is provided. A photoelectric conversion element including a transparent electrode including a light-receiving face, a photoelectric conversion layer, and a counter electrode is provided, in which a thickness L (m) of the transparent electrode satisfies an equation (1) 1.2×10−2×&rgr;≦L≦4.6/ƒ  (1) where &rgr; represents a resistivity (&OHgr;m), and f represents an effective photon flux density loss coefficient (1/m).

Abstract: Provided are a zinc oxide thin film having an X-ray diffraction peak of the plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

Abstract: A method of manufacturing copper-indium-gallium-diselenide (CuInxGa1-xSe2 or just CIGS) photovoltaic devices using elemental selenium and without requiring complex codeposition or requiring the use of toxic H2Se gas. A precursor taking one of several forms is deposited onto a substrate having a back contact. A first precursor includes copper, gallium, and indium, the latter of which is deposited in the presence of a selenium flux, all deposited in that order. The second precursor includes indium deposited in the presence of a selenium flux, copper, and gallium, deposited in that order. Next, the precursor is selenized using one of two techniques: an indium-gallium removal technique and a copper-top technique. In both techniques, the precursor is heated to and held at a first selenization temperature, most preferably 450° C., and then heated to and held at a second selenization temperature, most preferably 550° C.

Abstract: A dye-sensitizing solar cell comprising: a first substrate whose surface is at least conductive; a second substrate on which a conductive layer is formed, the second substrate being transparent, the first and second substrates being spaced by a distance with the conductive surfaces of the first and second substrates opposite to each other; a semiconductor layer having a dye adsorbed thereon, the semiconductor layer being formed on one of the conductive surfaces; a glass frit for sealing peripheral edges of the first and second substrates; and a redox electrolyte which is filled between the first and second substrates.

Abstract: Disclosed is an aggregate of metal oxide fine particles having fine pores whose size frequency distribution has a plurality of peaks. Disclosed also is a method preferably used for producing the aggregate of metal oxide fine particles. The method comprises a step of reacting a precursor of a metal oxide with a compound interacting with the precursor in a solvent to yield metal oxide fine particles. Also disclosed are a photosensitive semiconductor comprising a substrate, and a metal oxide porous body having fine pores whose size frequency distribution has a plurality of peaks and a method preferably used for manufacturing the photosensitive semiconductor electrode. This photosensitive semiconductor electrode has a high energy conversion efficiency and is preferably used in a photoelectric converter.

Abstract: In a method of manufacturing a solar cell, a phase A is deposited in the form of stacks on an electrically conductive substrate, wherein the stacks are covalently and electrically interconnected and also connected to the substrate, and any spaces between the stacks are filled with a phase B, which is electrically connected to a counter electrode, wherein the phases A and B are so selected that they form a photovoltaic active transition structure or an injection contact. The invention also resides in a solar cell made in accordance with this method.

Abstract: A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.

Abstract: Reduction of surface leakage current by surface passivation of Cd1-xZnxTe and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (˜3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

Abstract: A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with aluminum wires. Making the aluminum wires flush, or coplanar, with underlying insulation requires digging trenches in the insulation, and then filling the trenches with aluminum to form the aluminum wires. Trench digging is time consuming and costly. Moreover, aluminum has higher electrical resistance than other metals, such as silver. Accordingly, the invention provides a new "self-trenching" or "self-planarizing" method of making coplanar silver wires. Specifically, one embodiment forms a first layer that includes silicon and germanium; oxidizes a region of the first layer to define an oxidized region and a non-oxidized region; and reacts silver with the non-oxidized region. The reaction substitutes, or replaces, the non-oxidized region with silver to form silver wires coplanar with the first layer.

Abstract: A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

Abstract: A plurality of series-connected elements are arranged, as parallel elongated stripes, on a common electrically insulating transparent substrate (1). Each element comprises a photoanode (4), a porous counterelectrode or cathode (6) and an intermediate electrically insulating porous layer (5) separating the photoanode (4) from the cathode (6). The pores of the intermediate layer (5), the photoanode (4) and the cathode (6) are at least partially filled with an electron transferring electrolyte. An intermediate layer (2) of a transparent electrically conducting material is interposed between the substrate (1) and each photoanode (4). The cathode (6) of the first photovoltaic element of the series is electrically connected with a first terminal (9) of the battery. The cathode (6) of each following element is connected with the intermediate conducting layer (2) of the preceding element, over a gap (3) separating the respective intermediate layers (2) of these two elements.

Abstract: Transparent conductive ZnO films are formed at a high rate, are equal in performance to those formed by MOCVD and have a large area, while the influence of sputtering bombardment is reduced. A method for producing transparent conductive ZnO films is used to produce the window layer of a CIGS thin-film solar cell. A first conductive film functioning as an interface-protective film is formed on a high-resistance-buffer (interfacial) layer by low-output (100 W or lower) RF sputtering using a ZnO target while reducing sputtering bombardment. Second and third conductive films for the window layer are then formed by DC magnetron sputtering in steps using a ZnO--Al target in each step.

Abstract: A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.

Abstract: A method of creating a photovoltaic device for the conversion of light to electrical current comprises the steps of: (a) providing a layer of glue on a substrate; (b) laying down one or more elements of silicon doped with varying amounts of boron and phosphorous on the glue; (c) applying electro-conductive paint and/or metal strips between the silicon elements, wherein the electro-conductive paint includes materials such as nickel, silver, copper, etc.; (d) applying electro-conductive paint and/or metal strips to form two final electrical connectors to the photovoltaic device; (e) sealing the device from air and moisture with coating of clear acrylic lacquer or other material.

Abstract: The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.

Abstract: The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface.

Abstract: The present invention is directed to a method of manufacturing a photovoltaic cell with high conversion efficiency, wherein a polycrystal CdTe layer with a large grain size can be formed by forming an indium oxide film (20) on a transparent conductive substrate having a transparent conductive film (2) as its surface layer, then forming an n-type CdS layer (3) and a p-type CdTe layer (4) thereon, then attaching cadmium chloride (CdCl.sub.2) on the p-type CdTe layer, and then annealing. The indium oxide film (20) is capable of relaxing strain caused at an interface between the transparent conductive film (2) and the n-type CdS layer (3), so that a good CdS/CdTe junction interface can be formed. The indium oxide film (20) can be formed by forming an indium film on the transparent conductive substrate and then annealing in oxygen containing atmosphere.

Abstract: A structure of and a method for fabricating a highly sensitive photo sensor. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.