Electrode Making Patents (Class 445/46)
  • Patent number: 6346772
    Abstract: A gas discharge display device comprising a front side substrate having a plurality of first electrodes and a back side substrate having a plurality of second electrodes, wherein at least said first electrodes or second electrodes are formed by wet etching using a resist made of an inorganic material, is excellent in the ability to suppress the breakage of wiring in electrodes.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: February 12, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Masashi Nishiki, Ryohei Satoh, Yuzo Taniguchi, Shigeaki Suzuki, Michifumi Kawai, Masahito Ijuin, Akira Yabushita, Makoto Fukushima, Tomohiko Murase
  • Patent number: 6338661
    Abstract: A spark plug derives an extended lifetime because a large plurality of sharp edges are provided on the center electrode, the ground electrode, or both to enhance spark propagation. In a first embodiment, the ground electrode has a conventional cantilever shape, but the center electrode extends into coplanar relation to a distal surface of the electrode so that sparks propagate from the cylindrical side walls of the center electrode. In variations of the first embodiment, the number of cantilevered ground electrodes is increased, with the ground electrodes being circumferentially and equidistantly spaced about the center electrode. In another embodiment, the ground electrode has an annular configuration and includes a cylindrical annular wall spaced radially outwardly of the cylindrical sidewall of the center electrode, in concentric relation to the center electrode.
    Type: Grant
    Filed: August 25, 2000
    Date of Patent: January 15, 2002
    Inventor: Paul Rossi
  • Patent number: 6333968
    Abstract: The transmission cathode for X-ray generation is a device wherein an electrical current generated by a low voltage power supply produces an electron flow from the transmission cathode that is accelerated by a high voltage power supply towards an anode where X rays are emitted on impact. As the X rays are emitted, a primary beam passes through the cathode striking a sample placed outside the tube. The transmission cathode is X comprised of an electron emitter structure, preferably, an electron field emitter diode or thermionic emitter or a photoemitter or a nanotube or a pyroemitter or a piezoemitter, fabricated, preferably of elements of atomic numbers of 14 (silicon) or below, with electrically conductive components or conductive mechanical structural components, preferably, conductive silicon or diamond or aluminum or beryllium metal, and non-conductive electrical insulators or non-conductive mechanical structural components, preferably, diamond or silicon dioxide or boron carbide.
    Type: Grant
    Filed: May 5, 2000
    Date of Patent: December 25, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Robert R. Whitlock, Michael I. Bell, David V. Kerns, Sherra Kerns, Jimmy L. Davidson, Weng Poo Kang
  • Publication number: 20010030498
    Abstract: A high pressure discharge lamp which achieves a long life of at least 3000 hours and in which variations in lamp characteristics are suppressed is disclosed. In the high pressure discharge lamp of the present invention, during manufacturing of an electrode, a covering member 123 having a coil shape and being made of refractory metal is applied on a discharge side end of an electrode rod 122 made of refractory metal so as to cover a circumference of the electrode rod 122 in a vicinity of the discharge side end. The discharge side end 124 on which the covering member 123 is applied is fused into a semi-sphere by intermittently heat fusing the discharge side end according, for instance, to arc discharge or laser irradiation.
    Type: Application
    Filed: April 17, 2001
    Publication date: October 18, 2001
    Inventors: Takashi Tsutatani, Yoshiki Kitahara, Toshiyuki Shimizu
  • Patent number: 6261144
    Abstract: A gas discharge display device comprising a front side substrate having a plurality of first electrodes and a back side substrate having a plurality of second electrodes, wherein at least said first electrodes or second electrodes are formed by wet etching using a resist made of an inorganic material, is excellent in the ability to suppress the breakage of wiring in electrodes.
    Type: Grant
    Filed: October 1, 1998
    Date of Patent: July 17, 2001
    Assignee: Hitachi, LTD
    Inventors: Masashi Nishiki, Ryohei Satoh, Yuzo Taniguchi, Shigeaki Suzuki, Michifumi Kawai, Masahito Ijuin, Akira Yabushita, Makoto Fukushima, Tomohiko Murase
  • Patent number: 6235545
    Abstract: In one aspect, the invention encompasses a method of treating the end portions of an array of substantially upright silicon-comprising structures. A substrate having a plurality of substantially upright silicon-comprising structures extending thereover is provided. The substantially upright silicon-comprising structures have base portions, and have end portions above the base portions. A masking layer is formed over the substrate to cover the base portions of the substantially upright silicon-comprising structures while leaving the end portions exposed. The end portions are then exposed to conditions which alter the end portions relative to the base portions. In another aspect, the invention encompasses a method of treating the ends of an array of silicon-comprising emitter structures. A substrate having a plurality of silicon-comprising emitter structures thereover is provided. The emitter structures have base portions and ends above the base portions. A layer of spin-on-glass is formed over the substrate.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: May 22, 2001
    Assignee: Micron Technology, Inc.
    Inventor: Ammar Derraa
  • Patent number: 6228667
    Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: May 8, 2001
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, Jr., John K. Lee, Tianhong Zhang, Behnam Moradi
  • Patent number: 6218025
    Abstract: A sintered electrode of high-melting metal (for example tungsten) is produced from spherical metal powder having a well defined particle size. The mean particle size is from 5 to 70 &mgr;m. The particle size distribution covers a range from at most 20% below to at most 20% above the mean particle size.
    Type: Grant
    Filed: August 18, 1998
    Date of Patent: April 17, 2001
    Assignee: Patent- Truchand-Gesellschaft fuer Elektrische Gluelampen mbH
    Inventors: Dietrich Fromm, Bernhard Altmann, Wolfram Graser, Peter Schade
  • Patent number: 6188176
    Abstract: An organic EL device includes a substrate (21), a hole infecting electrode (22), an electron injecting electrode (25), and organic layers (23, 24) disposed between the electrodes. The hole injecting electrode (22) is an ITO electrode having (111) orientation. Due to improved film formation, close contact and physical properties at the interface between the hole injecting electrode and the organic layer, the device has a long lifetime, high luminance, high efficacy, and quality display and prevents the occurrence of current leakage and dark spots.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: February 13, 2001
    Assignee: TDK Corporation
    Inventors: Kenji Nakaya, Yasunaga Kagaya, Mitsufumi Codama, Osamu Onitsuka
  • Patent number: 6171165
    Abstract: A method and an accompanied apparatus for aligning an electron emitter with an extractor hole of a microcolumn. Four V-grooves, defined together with the window for forming the membrane and having bottoms situated on two axis are microfabricated on a chip. The axis intersect at a right angle and defines a center point for the extractor hole. The V-grooves are then used as references to align the electron emitter with the extractor hole, one axis at a time. The emitter is precisely aligned to the extractor hole because the extractor hole was formed with reference to the V-grooves. The thickness of the chip is used as the spacing reference between the emitter and the extractor.
    Type: Grant
    Filed: November 19, 1998
    Date of Patent: January 9, 2001
    Assignee: Etec Systems, Inc.
    Inventors: Ho-Seob Kim, Kim Y. Lee, T. H. P. Chang
  • Patent number: 6150762
    Abstract: A method of manufacturing a cathode for a plasma etching apparatus includes steps for making the inside of holes formed in the cathode and the surface of the cathode a hard surface so as to prevent particle generation while the cathode is in use for etching a wafer. These steps include: a) forming a plurality of holes in a silicon substrate; b) carrying out a physical-surface treatment on the surface of the silicon substrate using slurry; and c) carrying out a chemical-surface treatment for removing protrusions inside the holes formed on the silicon substrate and on the surface of the silicon substrate using potassium hydroxide (KOH). The cathode manufactured by this method has a hard surface formed thereon and inside the holes, and the hard surface has no protrusions. Without protrusions, no particles can be generated from protrusions being etched and loosened during the etching process, so no particles adhere to the wafer being etched.
    Type: Grant
    Filed: January 21, 1999
    Date of Patent: November 21, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-sung Kim, Young-gu Lee, Kyoung-man Shim, Kyue-sang Choi
  • Patent number: 6146229
    Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.
    Type: Grant
    Filed: May 18, 1998
    Date of Patent: November 14, 2000
    Assignee: ITT Industries, Inc.
    Inventors: Arlynn W. Smith, Warren David Vrescak
  • Patent number: 6136621
    Abstract: A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions.
    Type: Grant
    Filed: October 12, 1999
    Date of Patent: October 24, 2000
    Assignee: eMagin Corporation
    Inventors: Gary W. Jones, Steven M. Zimmerman
  • Patent number: 6066019
    Abstract: Cathode filaments are recrystallized to a microstructure that maintains ductility for proper alignment and electron emission capability. The method comprises controlled heating of a cathode filament from an ambient temperature T.sub.amb to its recrystallization temperature T.sub.recryst ; controlled holding of the cathode filament at the temperature T.sub.recryst ; and controlled cooling of the cathode filament from the temperature T.sub.recryst to the ambient temperature T.sub.amb. The cathode filament is usable in an x-ray tube and can be formed of a tungsten-rhenium material.
    Type: Grant
    Filed: December 7, 1998
    Date of Patent: May 23, 2000
    Assignee: General Electric Company
    Inventor: Bernard Patrick Bewlay
  • Patent number: 6060826
    Abstract: The purpose of the present invention is to provide an organic electroluminescent element having uniform surface luminescence, large luminescence intensity, and excellent stability over repeated use. The present invention provides a method of manufacturing an organic electroluminescent element using a positive electrode irradiated by excimer light when manufacturing an organic electroluminescent element comprising at least a substrate on which is sequentially formed a positive electrode, organic layer including an organic luminescent layer, and negative electrode, and an organic electroluminescent element manufactured by said method.
    Type: Grant
    Filed: March 4, 1998
    Date of Patent: May 9, 2000
    Assignee: Minolta Co., Ltd.
    Inventors: Hideaki Ueda, Keiichi Furukawa, Yoshihisa Terasaka
  • Patent number: 6043103
    Abstract: A field-emission cold cathode includes a substrate having a sharply pointed emitter disposed on a surface thereof and serving as an emitter electrode, an insulating film disposed on the substrate, and a gate electrode disposed on the insulating film and having an opening defined therein and having an edge surrounding the emitter. The gate electrode and the emitter are spaced from each other across a cavity near the emitter. The insulating film and the substrate have a boundary surface therebetween which is lower than the surface of the substrate. The substrate has a step positioned between the boundary surface and the surface of the substrate on which the emitter is disposed, the step being disposed between the insulating film and the emitter. The insulating film supports the gate electrode and has a thickness greater than the distance between the emitter and the gate electrode.
    Type: Grant
    Filed: June 15, 1998
    Date of Patent: March 28, 2000
    Assignee: NEC Corporation
    Inventor: Hisashi Takemura
  • Patent number: 5990605
    Abstract: An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
    Type: Grant
    Filed: March 20, 1998
    Date of Patent: November 23, 1999
    Assignee: Pioneer Electronic Corporation
    Inventors: Takamasa Yoshikawa, Kiyohide Ogasawara, Hiroshi Ito, Masataka Yamaguchi, Shingo Iwasaki, Nobuyasu Negishi, Takashi Chuman
  • Patent number: 5742125
    Abstract: The high pressure discharge lamp has refractory electrodes each having a top and a winding of refractory metal wire, which has turns and is, in an area thereof remote from the top, secured to the electrode. The turns of the winding are made to have torsion. Thereby an accurately defined position with respect to the top of the electrode is obtained. The direction of the torsion is opposite to the direction of the turns, which causes neighbouring turns to press one against the other.
    Type: Grant
    Filed: October 31, 1996
    Date of Patent: April 21, 1998
    Assignee: U.S. Philips Corporation
    Inventor: Jacobus L. J. Ruigrok
  • Patent number: 5652474
    Abstract: A cold cathode is formed by providing a body of semiconductor having a surface including at least one projection and subjecting the surface to anodic etching to produce thereon a porous layer.
    Type: Grant
    Filed: February 3, 1995
    Date of Patent: July 29, 1997
    Assignee: British Technology Group Limited
    Inventors: Peter Richard Wilshaw, Emily Boswell
  • Patent number: 5637642
    Abstract: This invention involved the discovery of novel polymers used as adhesives and a process for their preparation. The polymers were prepared by the nucleophilic substitution, at room temperature, of PVC with substituted alkyltrialkoxysilanes, which can be cured at room temperature to give adhesion of PVC to hydrophilic substrates. These polymers are particularly useful as adhesion promoters in ion-selective electrodes. The invention also involved the application of these adhesive primers to planar electrode substrates to give greatly improved performance in the response of ion-selective electrodes.
    Type: Grant
    Filed: May 26, 1995
    Date of Patent: June 10, 1997
    Assignee: Chiron Diagnostics Corporation
    Inventors: Mark W. Boden, Andy D. C. Chan, Susan M. Degnan, Stephen B. Ruiz
  • Patent number: 5614353
    Abstract: A method is provided for fabricating a display cathode which includes forming a conductive line adjacent a face of a substrate. A region of amorphic diamond is formed adjacent a selected portion of the conductive line.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: March 25, 1997
    Assignee: SI Diamond Technology, Inc.
    Inventors: Nalin Kumar, Chenggang Xie
  • Patent number: 5597338
    Abstract: A surface-conductive electron beam source having a fine particle film which is formed by repeating a film formation step of applying and calcining an organic metal compound solution several times. A pair of electrodes come in contact with the fine particle film, and an electron-emitting portion is formed at a part of the fine particle film. There is also a display device having the electron beam source, a modulation means for modulating an electron beam emitted from the electron beam source in accordance with an information signal, and an image-forming member for forming an image by the irradiation of the electron beam.
    Type: Grant
    Filed: September 25, 1995
    Date of Patent: January 28, 1997
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kumi Iwai, Ichiro Nomura, Tetsuya Kaneko
  • Patent number: 5506476
    Abstract: A field emission cathode includes first and second cathode layers having respective projections and disposed on the surface of a substrate. An insulating layer having an opening and disposed on the surface of the cathode layer surrounds the projections. A field emission tip includes the projections, one of which is annular and projects beyond the other so that the field emission tip has a crater-like shape which improves the electron emission characteristic of the cathode.
    Type: Grant
    Filed: March 15, 1994
    Date of Patent: April 9, 1996
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Gyun-gyoo Lee, Sun-jeong Choi
  • Patent number: 5499937
    Abstract: A cathode for a discharge lamp comprises a longitudinally extending central core of a high temperature, electrically conductive metal; and a coil of high temperature, electrically conductive metal wound thereabout, said coil being fastened to said core at least in part by mechanical interference. The mechanical interference can be achieved by keyways formed in the core surface. During winding, at least some of the turns of the coil enter the keyways providing a good,mechanical engagement of the coil with the core. The keyways can be formed by heating the core and compressing or forging areas with tools or the keyways can be formed by grinding or by any other suitable means.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: March 19, 1996
    Inventors: John L. Stevens, Dale A. Strassner
  • Patent number: 5494470
    Abstract: A method for the manufacture of a helix-coupled vane line consists in cutting out, in a part comprising at least one channel, successive slots through the channel that extend beyond the channel so as to obtain portions of turns each fixedly joined to a vane; cutting out, in another part, a succession of fingers that are all fixedly joined to each other; connecting the turn portions to the fingers so that one end of a turn portion is connected to one end of a first finger and the other end of the turn portion is connected to the base of a second finger adjacent to the first finger; and separating the fingers from one another at their bases. Application of helix-coupled vane lines. Is most notably for crossed-field amplifiers.
    Type: Grant
    Filed: July 22, 1994
    Date of Patent: February 27, 1996
    Assignee: Thomson Tubes Electroniques
    Inventors: Armel Beunas, Jean-Marc Falguieres, Henri Desmur
  • Patent number: 5465480
    Abstract: A planar gating grid for an IMS spectrometer is constructed with two sets of comb-like grid elements. Each set is connected to an electrode and the sets are interdigitated to form the grid. Mechanical stability is provided by attaching the grid elements to an insulating support member. The gating grid is produced from a thin metal foil by cutting or etching the foil to produce a rigid grid structure where all of the elements are connected to both electrodes and the electrodes are separated by a stretcher member. After the rigid grid structure is affixed to the insulating support member, the grid elements are selectively severed from one of the two electrodes to form the interdigitated grid.
    Type: Grant
    Filed: March 23, 1994
    Date of Patent: November 14, 1995
    Assignee: Bruker-Franzen Analytik GmbH
    Inventors: Manfred Karl, Ralf Burgartz
  • Patent number: 5460559
    Abstract: Electrodes of an electron gun are etched in an electrochemical bath. The electrodes to be etched serve as the anode in the bath. The side of the electrode to be etched which faces the cathode in the chemical bath, faces an electrode at a higher potential in the assembled electron gun.
    Type: Grant
    Filed: July 12, 1994
    Date of Patent: October 24, 1995
    Assignee: U.S. Philips Corporation
    Inventors: Ronald Van Der Wilk, Gerardus A. H. M. Vrijssen
  • Patent number: 5451175
    Abstract: An electronic device including a plurality of field emission devices exhibiting dis-similar electron emission characteristics wherein an aperture radius associated with each of the plurality of field emission devices determines the electron emission characteristic.
    Type: Grant
    Filed: January 6, 1994
    Date of Patent: September 19, 1995
    Assignee: Motorola, Inc.
    Inventors: Robert T. Smith, Robert C. Kane
  • Patent number: 5391433
    Abstract: A carbon material for electrodes which is a graphite/glass like carbon composite material having a structure in which the crystals of the graphite are oriented in one direction in the matrix of the glass like carbon so as to possess an electrode reaction activity inherent in the graphite crystals, having a maximum pore diameter of 150 .ANG. or less, and having electrolyte non-penetrative properties substantially corresponding to those of the glass like carbon; and a process for preparing a carbon material for electrodes which comprises the steps of highly dispersing, composing and orienting a graphite fine powder of the sufficiently grown crystals in an organic substance which can leave a glass like and less graphitizable carbon when calcined in a non-oxidizing atmosphere, and then calcining and carbonizing the composition.
    Type: Grant
    Filed: November 4, 1992
    Date of Patent: February 21, 1995
    Assignee: Mitsubishi Pencil Kabushiki Kaisha
    Inventors: Takamasa Kawakubo, Yoshihisa Suda
  • Patent number: 5147501
    Abstract: In the production of micron-size pyramid emitters for field emission devices, a first layer of electrically-conductive material, such as single crystal silicon or metal, is etched to form column-like structures each of which tapers from each end of the column towards an intermediate portion along its length. A second conductive layer is formed in contact with the free ends of the columns, and etching of the columns is then resumed until the intermediate portion of each column is etched through, leaving a pair of pyramid emitters pointing towards one another and supported by the respective conductive layer.
    Type: Grant
    Filed: January 12, 1990
    Date of Patent: September 15, 1992
    Assignee: The General Electric Company, p.l.c.
    Inventors: Neil A. Cade, Rosemary A. Lee, Chandrakant Patel, Helen A. Williams
  • Patent number: 5122707
    Abstract: A cathode for use in electron tubes which comprises a base metal made of nickel as a principal component and having a surface on which a porous electron emissive layer is formed. The porous electron emissive layer is of a composition comprising 0.1 to 20 wt % (relative to the total weight of the porous electron emissive layer) of scandium oxide having a layered crystalline structure dispersed in an oxide of alkaline earth metal including at least barium. This cathode can be made by preparing a solution in which nitrocellulose is dissolved with the use of an organic solvent, mixing both of barium carbonate and scandium oxide having a layered crystalline structure into the solution to provide an suspension, pulverizing solid components of the suspension for the adjustment of particle size, and depositing the suspension on a surface of the base metal to form the electron emissive layer.
    Type: Grant
    Filed: June 28, 1991
    Date of Patent: June 16, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hisao Nakanishi, Kinjiro Sano, Toyokazu Kamata, Keiji Watanabe, Masato Saito, Ryo Suzuki, Keiji Fukuyama, Masako Ishida
  • Patent number: 5015908
    Abstract: In order to bring a high power vacuum tube to full power in a few seconds, it is necessary to heat the cathode quickly to 1100.degree. C. In large tubes, prior art structures cannot be simply enlarged. A novel cathode structure in which the heater element is anisotropic pyrolytic graphite coated with anisotropic pyrolytic boron nitride for insulation and then sintered to the cathode avoids these problems.
    Type: Grant
    Filed: January 23, 1989
    Date of Patent: May 14, 1991
    Assignee: Varian Associates, Inc.
    Inventors: George V. Miram, Yosuke M. Mizuhara
  • Patent number: 5013965
    Abstract: An electron gun cathode and a manufacturing method therefor includes a unitary cylindrical sleeve having a bottom with through-holes for the passage of the terminals of a heater. The heater is disposed in a closed space formed by the sleeve and a base joined to the sleeve opposite its bottom. The heater is sealed in the closed space of the sleeve and base to promote thermal efficiency, reduce heat loss between the base and the sleeve, and reduce power consumption of the cathode.
    Type: Grant
    Filed: October 31, 1989
    Date of Patent: May 7, 1991
    Assignee: Samsung Electron Devices Co., Ltd.
    Inventors: Suk-bong Shon, Woo-young Na
  • Patent number: 5001397
    Abstract: The high-pressure gas discharge lamp according to the invention has electrodes which comprise an electrode rod 24 and a helical winding 26 near its tip 25 projecting into the lamp vessel, both of mainly tungsten. The winding 26 has a first layer of turns 27 helically wound around the rod 24 and locally having a turn of high pitch 29. The winding 26 has around the first layer 27 an outer layer of turns 28, at least two of the outer layer turns interlock with the turn of the high pitch 29 of the first layer 27 at contact areas 30. The turns engage with clamping fit the rod 24 diametrically opposite thereto. As a result, the winding 26 is fixed on the rod 24. If the first layer 27 is integral with the outer layer 28, the winding 26 can be sufficiently fixed with one turn of outer layer 28 interlocking with the high pitched turn 29.
    Type: Grant
    Filed: July 11, 1986
    Date of Patent: March 19, 1991
    Assignee: U.S. Philips Corporation
    Inventor: Wilhelmus C. Der Kinderen, deceased
  • Patent number: 4983878
    Abstract: In a method of forming a field-induced emission device, a cathode is provided on a substrate, for example by etching away the substrate to leave a pointed projection. The projection may be covered with a metallic layer to enhance the field-induced cathode emission. A first insulating layer is formed over the substrate, with an aperture therein corresponding to the cathode position. An apertured control grid layer is formed over the first insulating layer and an apertured second insulating layer is formed thereon. A tunnel formed by the apertures in the insulating and conductive layers is filled with a plug of soluble material. An anode strip is formed on the second insulating layer and over the plug, and the plug is then dissolved through gaps at the edges of the anode strip, thereby leaving an unsupported area of anode strip over the cathode. The tunnel may then be evacuated or may be filled with gas and the gaps at the edges of the anode strip will then be sealed to retain the vacuum or gas.
    Type: Grant
    Filed: August 24, 1988
    Date of Patent: January 8, 1991
    Assignee: The General Electric Company, p.l.c.
    Inventors: Rosemary A. Lee, Nandasiri Samarakone, Neil A. Cade
  • Patent number: 4952841
    Abstract: The high-pressure discharge lamp has electrodes which comprise a tungsten rod (24) which projects inside the lamp vessel and around whose end (25) projecting inside the lamp vessel a tungsten wire portion (26) is helically wound. The ends (30, 31) of the helically wound wire portion (26) are located within the sheath (29) of this wire portion (26) and the end faces (32, 33) are rupture surfaces devoid of burrs.
    Type: Grant
    Filed: July 11, 1986
    Date of Patent: August 28, 1990
    Assignee: U.S. Philips Corporation
    Inventors: Abraham Coomans, Wilhelmus C. der Kinderen, deceased, Friedrich J. de Haan, administrator
  • Patent number: 4929418
    Abstract: A cathode is made from tungsten powder using as an impregnant the product rmed from adding about 1 mole of a member selected from the group consisting of zirconium, zirconium dioxide, hafnium, hafnium dioxide, uranium, uranium dioxide, titanium, and titanium dioxide to about 50 to about 100 moles of a compound selected from the group consisting of Ba.sub.3 Al.sub.2 O.sub.6, Ba.sub.3 WO.sub.6, and Ba.sub.4 Al.sub.2 O.sub.7.
    Type: Grant
    Filed: January 22, 1990
    Date of Patent: May 29, 1990
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Louis E. Branovich, Bernard Smith, Gerard L. Freeman, Eckart Donald W.
  • Patent number: 4894257
    Abstract: A tungsten-iridium billet is impregnated with a chemical mixture of barium xide, strontium oxide, and aluminum oxide, the impregnated billet heated, and the surface of the impregnated billet desired for emission exposed to an overcoating of rhodium.
    Type: Grant
    Filed: July 5, 1988
    Date of Patent: January 16, 1990
    Assignee: The United States of America as represented by the Secretary of America
    Inventors: Bernard Smith, Gerard L. Freeman, Louis E. Branovich
  • Patent number: 4874981
    Abstract: Several embodiments of a thin film field emission cathode array are described which automatically shape the beams of emitted particles, without the addition of shaping or other electrode structure. A potential field pattern is established to control the trajectory of the emitted particles, by controlling the electromagnetic interaction of the conductive structures responsible for the particle emission.
    Type: Grant
    Filed: May 10, 1988
    Date of Patent: October 17, 1989
    Assignee: SRI International
    Inventor: Charles A. Spindt
  • Patent number: 4847534
    Abstract: The high-pressure gas discharge lamp according to the invention has electrodes comprising a rod of mainly tungsten and a helical winding of mainly tungsten near the tip of the rod. The winding has a first layer of turns, which is integral with a second layer of turns. The turns of the second layer are wound with torsion in the wire and surround turns of the first layer which are also wound with torsion. The direction of the torsion in a turn is equal to the direction in which the turn extends around the rod. As a result, the turns with torsion surround with tight fit their substrate and the winding is securely fixed ot the electrode rod.
    Type: Grant
    Filed: July 11, 1986
    Date of Patent: July 11, 1989
    Assignee: U.S. Philips Corporation
    Inventors: Wilhelmus C. der Kinderen, deceased, by Friedrich J. De Haan, administrator
  • Patent number: 4822312
    Abstract: Electrodes for lamps comprising elongated structures comprised of layers containing varying amounts of metal and refractory oxide. In a preferred embodiment the electrode has a first end comprising 9.6 volume percent tungsten and the remainder alumina. The second end comprises substantially 100% tungsten. The intermediate body contains layers of, e.g., 12, 20, 35, 50 and 75% tungsten.
    Type: Grant
    Filed: December 5, 1983
    Date of Patent: April 18, 1989
    Assignee: GTE Products Corporation
    Inventor: Edmund M. Passmore
  • Patent number: 4754542
    Abstract: This is an improved electrode for consumable vacuum arc melting of zirconium and titanium alloys, for alloys containing a low melting point alloying material or for very low oxygen zirconium. Electrodes of this type use a low resistance spar extending substantiallly the length of the electrode, with this spar being substantially free of any unalloyed low melting point material. The improvement utilizes attachment by wedging of the external members to the spar core. Preferably the wedging is accomplished by rotation of the external member with respect to the spar core.
    Type: Grant
    Filed: January 30, 1987
    Date of Patent: July 5, 1988
    Assignee: Westinghouse Electric Corp.
    Inventor: Sylvester A. Weber
  • Patent number: 4745326
    Abstract: A controlled porosity dispenser cathode and method of manufacture therefo using chemical vapor deposition and laser drilling, ion milling, or electron discharge machining for consistent and economical manufacturing a cathode with pores on the order of 0.2 to 2 .mu.m in diameter.
    Type: Grant
    Filed: December 10, 1986
    Date of Patent: May 17, 1988
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Richard F. Greene, Richard E. Thomas
  • Patent number: 4708681
    Abstract: A long lived high current density cathode is made from a mixture of tungs and iridium powders by processing the mixture of powders with an activator into a porous billet, and then impregnating the billet with a chemical mixture of barium oxide, strontium oxide, and aluminum oxide by firing the billet in a dry hydrogen furnace at a temperature at which the impregnant melts.
    Type: Grant
    Filed: March 6, 1987
    Date of Patent: November 24, 1987
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Louis E. Branovich, Gerard L. Freeman, Bernard Smith
  • Patent number: 4483811
    Abstract: Disclosed is a method of production of an electrode body formed by injecting polyphenylene sulfide resin into a metal mold containing a conductive member of small diameter to cause the molded resin to adhere to the outer periphery of the conductive member, for use in electrically preventing corrosion of a can body of a water heater or measuring the liquid level therein. Injection gates are arranged in over two positions substantially equidistantly spaced apart from each other and located substantially parallel to the conductor member and substantially on the circumference of an imaginary circle centered at the conductive member. The conductive member comprises titanium wires subjected to sandblast treatment to have a surface roughness of 15-34 .mu.m and then to cleansing treatment. No coupling agent is used, to prevent water from leaking between the polyphenylene sulfide resin and the conductive member.
    Type: Grant
    Filed: July 12, 1983
    Date of Patent: November 20, 1984
    Assignee: Hitachi, Ltd.
    Inventor: Kozi Hirata
  • Patent number: 4469984
    Abstract: A grid-like electrode for electronic components having its grid portion made of fibrous carbon threads bonded by means of the coke of an organic polymer. The grid-like electrode is made by impregnation of each fibrous carbon thread with a liquid organic polymer containing at least 20% by weight of carbon. Then a grid-like electrode is shaped from these threads and subjected to heating until the polymer is irreversibly cured, followed by heating of the polymer to cause pyrolysis thereof to a glossy carbon state.
    Type: Grant
    Filed: February 12, 1982
    Date of Patent: September 4, 1984
    Inventors: Jury S. Sergeev, Stanislav M. Shatalov, Vladimir G. Vildgrube, Iosif L. Gandelsman, Valeria K. Kuznetsova, Iosif S. Libman, Egor N. Ljukshin, Vyacheslav I. Frolov, Valery I. Kostikov
  • Patent number: 4444718
    Abstract: A high current density cathode is made by first forming an active porous h purity tungsten pellet by the steps of:(A) mixing tungsten powder with about 1 to 5 percent by weight of the mixture of an activator powder and compacting the powders at a pressure of about 35 tons per square inch to form a pellet,(B) sintering the pellet in a non-oxidizing atmosphere at about 1800 degrees C. for about 11/2 to 31/2 hours to the desired porosity,(C) filling the porous pellet with a filler material,(D) machining to the desired size and shape,(E) removing the filler material, and then forming the cathode by impregnating the pellet with Ba.sub.5 Sr(WO.sub.6).sub.2 at about 1700 degrees C. in an inert atmosphere and subsequently firing for 2 minutes at 1800 degrees C. in dry hydrogen.
    Type: Grant
    Filed: March 19, 1982
    Date of Patent: April 24, 1984
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Bernard Smith, Gerard L. Freeman
  • Patent number: 4398896
    Abstract: A method of de-burring and cleaning an electrode system, a printed circuit board, or the like comprising at least two conductors positioned at a predetermined distance from each other by means of insulation material. The electrode system is immersed in a dielectric liquid and an electric potential difference is then applied between the conductors which is sufficiently large to generate an electric flash-over between the conductors. As a result of the small free path length in the dielectric liquid metal sputtered from the conductors can not deposit on the insulating parts of the electrode system.
    Type: Grant
    Filed: June 18, 1979
    Date of Patent: August 16, 1983
    Assignee: U.S. Philips Corporation
    Inventor: Willem M. Van Alphen