Abstract: A polishing slurry comprising a collagen derivative and a colloidal solution is effective for polishing of synthetic quartz glass substrates. It prevents formation of defects having a size that can be detected by a high-sensitivity flaw detector.

Abstract: A finishing apparatus and method for surface finishing workpieces. A tub is rotatable about vertical axis and operable to hold and rotate abrasive media completely submerged in water or other liquid. One or more manipulators, each supporting a spindle operable for supporting and rotating a workpiece about a spindle axis of the spindle with the workpiece at least partially submerged in the abrasive media and operable for holding spindle axis normal to and spaced apart from the vertical axis with the spindle horizontal in the tub during the surface finishing process while the tub is rotating. Manipulators are independently operable to present one of the workpieces for loading and unloading on and off spindle while tub is rotating and continuing to process the other workpieces submerged in the media and water. A rake includes a plate and means for lifting the plate up and down vertically through the abrasive media.

Abstract: Embodiments of the present invention pertain to reducing agglomeration of particles while manufacturing a lapping plate using an oil-based slurry. According to one embodiment, an oil-based slurry with particles of a known size is applied to a lapping plate. The oil-based slurry is ultrasonically mixed while applying the oil-based slurry to the lapping plate in order to reduce agglomeration of the particles.

Abstract: Methods of treating the polymeric surfaces of a stent with a fluid including a solvent for the surface polymer are disclosed.

Abstract: A surface treatment device and a surface treatment method for a long wirelike article, capable of grinding the surface of the long wirelike article efficiently with powder by cyclically repeating pressing and release of an elastic tube filled with the powder. At least one surface treatment unit includes a tube filled with powder which can be supplied to and discharged from the tube, and having a long wirelike article movably passing through the powder, a pressing mechanism for cyclically pressing and releasing the tube, and a feed mechanism for moving the long wirelike article passing through the powder.

Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.

Abstract: An example method of maintaining a serviceable component of a gas turbine engine includes selecting a used component, using a fluid to move an abrasive against a surface of the used component, and removing material from the used component using the abrasive. In one example, the method moves the abrasive against the surface of the used component when the used component is installed within the gas turbine engine.

Abstract: An ultrasonic cleaning apparatus according to the present invention comprises a plurality of cleaning tanks configured to store a cleaning liquid, an object-to-be-processed holder capable of being inserted into each cleaning tank, the object-to-be-processed holder being configured to hold an object to be processed and to immerse the object to be processed into the cleaning liquid, a vibrator disposed on each cleaning tank, a single ultrasonic oscillator configured to make each vibrator ultrasonically vibrate, an output switch interposed between the ultrasonic oscillator and the vibrator of each respective cleaning tank, the output switch being configured to switch the vibrator that is connected to the ultrasonic oscillator, and a control device configured to control the ultrasonic oscillator and the output switch, wherein the control device controls the ultrasonic oscillator and the output switch such that a timing at which the vibrator of one of the cleaning tanks is made to ultrasonically vibrate, and a tim

Abstract: A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.

Abstract: The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

Abstract: Embodiments described herein generally relate to connecting Electronic Lapping Guides (ELG) to a lapping controller such that the number of wire bonds from the controller to a row of read heads is minimized. When lapping the air bearing surface of the read heads, the electrical resistances of the ELGs are monitored to adjust the lapping process and set the stripe height for read sensors in the read heads. Once the resistance corresponds to the desired stripe height, the lapping process is stopped. To measure the resistance, each ELG may be electrically coupled to the same substrate—i.e., share the same common ground. The lapping controller applies a voltage potential across the ELGs using a wire bonded to a pad in the respective read head and one or more connections to the grounded substrate. This configuration avoids having to bond two wires onto each read head.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.

Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

Abstract: A method is provided for recycling and treating the wastes of silicon wafer cutting and polishing processes. To begin with, a dewatered filter cake is mixed with water so that the filter cake is diluted to form a working fluid. The water reacts with silicon in the filter cake to produce silicon dioxide and hydrogen. After the hydrogen is extracted for storage, specific gravity separation takes place via water so that silicon carbide and silicon particles are separated for sorting. Then, solid-liquid separation is performed on the remaining working fluid to separate silicon dioxide (solid) from water and PEG (liquid), before PEG is separated from water. Thus, the useful silicon particles, silicon carbide, silicon dioxide, and PEG are recycled from the filter cake to reduce the total amount of wastes. Moreover, as the side product, hydrogen, is of high commercial value, the method also adds value to recycling.

Abstract: A process for manufacturing a single-piece blisk, including: using an abrasive water jet to cut a block of material, so as to create blade preforms extending radially from a disk, then milling the blade preforms.

Abstract: A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1?0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

Abstract: Methods for abrasive cleaning, deburring, providing barrier coatings and sealing leaks in existing pipes, in a single operation, in one pass by intermittent bursts of dry particulates forced and pulled by air throughout the piping system by a generator and a vacuum. Cleaning includes intermittently injecting bursts of abrasive particles into the pressurized gas into the piping system for cleaning pipe interior walls, reducing burrs and interior lips in the pipe interior walls and generating a vacuum suction in the piping system to remove abrasive particles and debris.

Abstract: Wire for cutting feedstock and a method for cutting feedstock with the wire. The wire may include an iron based alloy comprising at least 35 at % iron, nickel and/or cobalt in the range of about 7 to 50 at %, at least one non-metal or metalloid selected from the group consisting of boron, carbon, silicon, phosphorus, and/or nitrogen present in the range of about 1 to 35 at %, and one metal selected from the group consisting of copper, titanium, molybdenum, aluminum, and/or chromium present in the range of about 0 to 25 at %, wherein the wire has an aspect ratio of greater than one and exhibits metallic and/or crystalline phases of less than 500 nm in size.

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.

Abstract: A method for polishing a vehicle wheel, the wheel includes a plurality of holes and a cylindrical rim. A polishing media storage tank holding abrasive media is vibrated to cause the medium to flow in an upwardly or downwardly vortex. The vehicle wheel is dipped into the medium such that the rim portion is disposed between the upward or downward flow of the medium, to polish the wheel.

Abstract: A device for polishing centrifugal impellers for a turbomachine including a vat configured to be filled with a polishing agent, and an impeller support configured to make the impeller rotate around its axis and move it along its axis such that all of points of the impeller have a helical movement whereof the pitch is close to that of the helix from which the general shape of the airflow channels of the impeller comes, delimited by the blades of the impeller.

Abstract: Stent, as well as a method and device for fabricating the stent, wherein the stent has a tubular lattice structure comprising individual struts and at least one strut of which at least one longitudinal section runs with at least one directional component in the radial circumferential direction of the stent, wherein the surface of the longitudinal section facing the outside of the stent is curved only about the longitudinal axis of the stent. According to the invention, the surface of longitudinal section of the strut, which surface faces the inside of the stent, has such a curvature that the strut cross section is fluidically optimized.

Abstract: Among other things, one or more techniques and/or systems are provided for driving a body of a polishing head using an alignment gear. That is, an alignment gear, coupled to a housing of the polishing head, can transfer rotational force from the housing to the body responsive to the alignment gear being mated with a channel associated with the body. For example, the housing can supply pressure to the body, resulting in the body and the housing moving towards one another into a mated state. When the body and the housing are in the mated state, the alignment gear can mate with the channel (e.g., the alignment gear can fit within the channel). In this way, the alignment gear can drive the body by transferring rotational force to the body, resulting in the body rotating a semiconductor wafer against a polishing pad to polish the semiconductor wafer, for example.

Abstract: A method of turning the surface of a die, which is used to make a product, into an antireflective roughened one includes the steps of: a) producing a first roughness on the surface of the die; and b) producing a second roughness, which is smaller than the first roughness, on the surface of the die on which the first roughness has already been produced.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: The present invention incorporates at least one thermoplastic or elastomeric polymer in abrasive flow machining media either as the sole or as one of the polymeric constituents. The presence of thermoplastic polymer imparts a greater elastomer characteristic (elasticity, compression resistance, increased relaxation times) as contrasted with traditional media. Enhanced elastomeric characteristics enable more uniform abrasive machining. In a particularly preferred embodiment, silicone- or polyorganosiloxane-based medium contains elastic silicone rubber particles dispersed therethrough to achieve increased relaxation times comparable to those attainable with the inclusion of a thermoplastic polymer.

Abstract: Method and device for processing a surface (5) of a diamond (1) with a mechanical part (3) which is moved in relation to the surface (5) of the diamond (1), whereby unbound diamond grains (2) are provided in between the mechanical part (3) and the surface (5) of the diamond (1), whereby the mechanical part (3) subjects the diamond grains (2) to a rolling motion over the surface (5) of the diamond (1), such that the diamond grains (2) move in relation to the mechanical part (3) and the surface (5) of the diamond (1), whereby the mechanical part (3) makes a mechanical contact with the surface (5) of the diamond (1) via the diamond grains (2), whereby this mechanical contact represents a contact length (8) over which the diamond grains (2) roll on the surface (5) of the diamond (1), mainly according to the direction of the relative motion of the mechanical part (3) in relation to the surface (5) of the diamond (1) and, whereby the diamond grains (2), with the support of the mechanical part (3), press themselves

Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Abstract: A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.

Abstract: The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.

Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

Abstract: A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad 10 is equipped with a urethane sheet 2. The urethane sheet 2 has a polishing surface P for polishing an object to be polished. The urethane sheet 2 is formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foams 3 are dispersed approximately uniformly inside the urethane sheet 2. Opened pores 4 which are opened parts of the foams 3 are formed at the polishing surface P. Inside the urethane sheet 2, the foams 3 formed adjacently to each other are communicated by communication holes 9, and the communication holes 9 are formed at a ratio of 800 holes/cm2 or more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holes 9 and the foams 3.

Abstract: Embodiments of the invention provide a slurry delivery and rinse system for a chemical mechanical polishing (CMP) apparatus which is capable of self-cleaning, and which can adjustably deliver the slurry agent and rinse agent over a polishing pad. In one embodiment, the fluid delivery system has a distributed slurry delivery arm (DSDA) which contains at least one manifold, usually two or more manifolds attached to the lower surface of the delivery arm. Each DSDA manifold contains a plurality of slurry nozzles disposed along the length of the manifold. The delivery arm also contains a plurality of high pressure rinse nozzles extending from the lower surface of the delivery arm and disposed along the length of the delivery arm, parallel to each DSDA manifold. In one example, the delivery arm contains two DSDA manifolds disposed parallel to each other and a plurality of high pressure rinse nozzles disposed between the manifolds.

Abstract: Methods of finishing a sheet of material, such as a glass sheet, include finishing an edge portion of the sheet of material with magnetorheological finishing. In one example, the average thickness of the sheet of material between a first face and a second face is from 50 ?m to about 500 ?m. In another example, the method consists essentially of a single step of finishing the edge portion of the glass sheet with magnetorheological finishing such that the entire edge portion is shaped between the first face and the second face during the a single magnetorheological finishing step.

Abstract: An apparatus for lapping a portion of an exterior surface of a housing is described. The apparatus includes at least a lapping tool arranged to execute a lapping operation. The lapping tool takes the form of a lapping pad which includes a conduit through which slurry can be transported for local deposition on the housing during a lapping operation. The apparatus also includes a stage on which a workpiece in the form of a housing is mounted. During the lapping operation, slurry is passed through the slurry conduit in the lapping tool, the lapping tool and the housing are moved in various motions. In this way, a gradual transition region is created between an accessory region and the remainder of the housing.

Abstract: The present invention relates to a method for producing an optical member base material for EUVL, comprising performing the following in this order to obtain an optical member base material for EUVL: a preliminary-polishing step of preliminarily polishing a film forming surface and a back surface of the film forming surface of a glass substrate; a measuring step of measuring a total thickness distribution and a flatness of the glass substrate; and a corrective-polishing step of locally polishing only the back surface of the glass substrate depending on the measurement result of the measuring step.

Abstract: A surface-treating process and a forming process in which an inner surface of a vacuum member is mechanically polished in the presence of a liquid medium including no hydrogen atom.

Abstract: In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Abstract: A device for double-sided processing of flat workpieces has upper and lower working discs forming between them a working gap containing a carrier disc with cutout(s) for workpiece(s), the carrier disc having circumferential teeth by means of which it rolls on an inner and an outer gear wheel or pin ring, wherein the gear wheels or pin rings have a multiplicity of gear or pin arrangements which engage the teeth of the carrier discs during rolling, at least one of the pin arrangements having a guide which delimits movement of the margin of the carrier disc in at least one axial direction, the guide formed by a circumferential shoulder or a circumferential groove.

Abstract: Titanium-containing articles having improved surface finishes and methods for changing the surface of titanium containing articles, for example by removing overstock, are provided. One example method includes passing a fluid at high pressure across a surface of an titanium aluminide alloy-containing article, for example, a turbine blade, at high linear speed and deforming the surface of the titanium aluminide alloy-containing article, and removing material from the surface of the titanium aluminide alloy-containing article. Though aspects of the invention can be used in fabricating high performance turbine blades, the methods disclosed can be applied to the treatment of any titanium-containing article for which it is difficult to obtain an improved surface finish.

Abstract: A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Abstract: A synthetic quartz glass substrate is prepared by (1) polishing a synthetic quartz glass substrate with a polishing slurry comprising colloidal particles, an ionic organic compound having an electric charge of the same type as the colloidal particles, and water, and (2) immersing the polished substrate in an acidic or basic solution for etching the substrate surface to a depth of 0.001-1 nm. The method produces a synthetic quartz glass substrate while preventing formation of defects of a size that is detectable by the high-sensitivity defect inspection tool, and providing the substrate with a satisfactory surface roughness.

Abstract: A method for polishing a semiconductor wafer having a first side and a second side, the method includes polishing the first side using a Fixed Abrasive Polishing (FAP) with a polishing pad including fixedly bonded abrasives having an average particle size of 0.1-1.0 ?m; applying a cement layer with a thickness of at most 3 ?m to the polished first side; fixing the polished and cemented first side on a carrier plate of a polishing machine; and polishing the second side using a single-side chemical mechanical polishing.

Abstract: The substrate holder is a device for holding a substrate and pressing it against a polishing pad. The substrate holder includes: an inner retaining ring vertically movable independently of the top ring body and arranged around the substrate; an inner pressing mechanism to press the inner retaining ring against the polishing surface of the polishing pad; an outer retaining ring to vertically movable independently of the inner retaining ring and the top ring body; an outer pressing mechanism to press the outer retaining ring against the polishing surface; and a supporting mechanism to receive a lateral force applied to the inner retaining ring from the substrate during polishing of the substrate and to tiltably support the outer retaining ring.

Abstract: A method of machining a semiconductor substrate using a soft polishing pad and an apparatus for machining a semiconductor substrate which has a soft polishing pad. The method includes the steps of lapping a surface of the semiconductor substrate, and polishing the lapped surface of the semiconductor substrate. The step of polishing the lapped surface of the semiconductor substrate includes polishing the lapped surface of the semiconductor substrate using slurry containing an abrasive interposed between the semiconductor substrate and a polishing pad which has a shore D hardness of 65 or less.

Abstract: The present invention relates to a TiO2-containing quartz glass substrate for an imprint mold having a main surface and a side surface, in which the side surface has an arithmetic average roughness (Ra) of 1 nm or less, and the side surface has a root mean square (MSFR_rms) of concaves and convexes in the wavelength region of from 10 ?m to 1 mm being 10 nm or less.

Abstract: Methods of fabricating magnetic write heads and electrical lapping guides (ELG's) using a split gap deposition process is described. A removal process is performed on a magnetic material to define a main write pole and to define a corresponding ELG for the main write pole. A first non-magnetic gap layer is deposited. A mask and liftoff process is performed to deposit an electrically conductive material on the first gap layer disposed along a front edge of the ELG. A second non-magnetic gap layer is then deposited and a shield is fabricated for the write pole.

Abstract: The present invention is directed to a method and apparatus for processing a metallic gear comprising providing a gear, directing a first peening media at the metallic gear thereby exposing a plurality of surfaces on the metallic gear to the first peening media whereby the strength and wear properties of the teeth roots of the gear are enhanced, directing a second peening media at the metallic gear thereby exposing a plurality of surfaces on the metallic gear to the second peening media whereby the KSI of the surface of the gear is enhanced, providing a container, placing a fine finishing medium in the container, placing the gear with the fine finishing medium in the container, coupling vibrations to the container to vibrate the fine finishing medium with the wetted gear, removing the gear from the container, washing the gear and rinsing the gear with rust inhibitor.

Abstract: A method for forming a shape of an electro-optical component or photovoltaic component, the method comprising: ultrasonically cutting a substrate using an ultrasonic cutting machine having a holder adapter operatively connected to a shape mould having a contact edge corresponding to the shape, the contact edge making contact with the substrate at a contact region; and spraying a grinding fluid to the contact region; wherein after a predetermined amount of time of ultrasonically cutting the substrate, the component is formed corresponding to the shape.

Abstract: The present invention relates to a polishing agent for polishing a surface to be polished of an object to be polished, the polishing agent including: first silicon oxide fine particles having an average primary particle size of 5 to 20 nm; second silicon oxide fine particles having an average primary particle size of 40 to 110 nm; and water, in which a ratio of the first silicon oxide fine particles to a total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 0.7 to 30% by mass.