Abstract: A grinding machine includes a driving unit, a grinding wheel unit, an abrasive belt unit and a dust-collecting device. The dust-collecting device includes a dust-discharging unit and a dust-guiding unit. The dust-discharging unit includes a dust-collecting seat disposed fixedly on a side cover of the grinding wheel unit, and a suction fan assembly disposed within the dust-collecting seat. The dust-guiding unit includes a conduit communicated with a dust-receiving chamber in the grinding wheel unit and an accommodating chamber in the abrasive belt unit. The grinding wheel unit, the abrasive belt unit and the suction fan assembly are driven by the driving unit. Dust is induced by the suction fan assembly to move from the dust-receiving chamber and the accommodating chamber into the dust-collecting seat.

Abstract: A face grinder assembly is disclosed for removing irregularities from tire. The face grinder assembly includes an outer frame and a slide frame slidably attached to the outer frame. The slide frame is capable of vertical movement relative to the outer frame between a working position and a non-working position. A sub-assembly carried by the slide frame includes a grinding stone. The sub-assembly is configured to define a clearance for the tire in the non-working position of the slide frame.

Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

Abstract: A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

Abstract: A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.

Abstract: An integrated system for processing a plurality of wafers, having a conductive front surface, is provided. The system includes a plurality of processing subsystems for depositing on or removing metal from the front surfaces of the wafers. Each processing subsystem includes a process chamber and a cleaning chamber. The system also has a wafer handling subsystem for transporting each of the wafers into or out of the appropriate one of the plurality of processing subsystems. The plurality of processing subsystems and wafer handling subsystem form an integrated system.

Abstract: The present invention discloses a burr removing apparatus including a base for placing the compact disc on, and a pressing apparatus equipped on the base and corresponding to the inner circle of the compact disc for moving up and down to eliminate a bur at the inner circle of the compact disc. An upper and a lower inhaling apparatus are respectively equipped in the pressing apparatus and the base, and extend respectively to the surfaces of the pressing apparatus and the base. The upper and lower inhaling apparatus have the upper and lower inhaling holes to inhale the bur eliminated. The present invention eliminates and inhales the redundancy before bonding the discs, so the smoothness of the disc can be improved to avoid the bubbles while bonding, and providing a disc with good mechanical properties and weather-resistance.

Abstract: The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer. The polishing apparatus has a processing section including a polishing section (1) for polishing a semiconductor wafer (6) and a cleaning section (10) for cleaning a polished semiconductor wafer, a receiving section (40) for supplying a semiconductor wafer (6) to be polished to the processing section and receiving a polished semiconductor wafer (6), and a cleaning chamber (20) disposed between the processing section and the receiving section and defined by partitions (102, 103) with shutters (22, 24) which separate the processing section and the receiving section from each other.

Abstract: An apparatus and method for chemical mechanical polishing are disclosed. An example apparatus for use with a chemical mechanical polishing (CMP) process includes a polishing part configured to perform a CMP process to a polishing endpoint for a polishing target deposited on a substrate, a cleaning part configured to clean the substrate, and a resistance measurement part configured to measure a sheet resistance of the substrate. The example apparatus also includes a CMP control part configured to determine based on the sheet resistance whether a residual target exists, to estimate re-polishing time, and to control the polishing part to perform a re-polishing process if the residual target exists.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: A polishing device having a table connected to a traction drive type reduction gear. The reduction gear includes an externally contacting shaft formed in a ring-shaped hollow cylinder and arranged at the center; a plurality of intermediate shafts which are equidistantly disposed at the circumference of the externally contacting shaft, at least one of which is an input shaft; and an internally contacting cylinder with which the intermediate shafts internally contact, and under free conditions, the externally contacting shaft formed in a hollow cylinder has a diameter which is a little bit larger than a diameter of an imaginary circle which externally contacts with a plurality of intermediate shafts whereby pressing load is created by means of deformation of the hollow cylinder.

Abstract: A wafer grinding apparatus includes a wafer-transporting device for transporting a wafer, a first nozzle, and a second nozzle. The wafer-transporting device includes at least a suction pad having a first surface and a second surface that is flexible for sucking the wafer, and a transporting mechanism connected to the first surface of the suction pad for transporting the wafer. The first nozzle is used for ejecting a first liquid to the first surface of the suction pad for cleaning the first surface, and the second nozzle is used for ejecting a second liquid to the second surface of the suction pad and the wafer for cleaning the second surface and the wafer.

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: Specific embodiments of the present invention are directed to a method of operating a modular chemical mechanical planarization process. The method comprises operating CMP apparatus comprising a docking station having at least one CMP module and at least one cleaning module to process one or more substrates therein. The plurality of modules are controllable separately by individual controllers associated separately with the modules. One of the modules is disengaged from the docking station, and is mechanically removed to free the module from the docking station, while the other modules are still operable to process the one or more substrates therein.

Abstract: The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.

Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing (710) a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (720), polishing (730) and cleaning (740) processes. The wafer is thereafter transferred (750) to a wafer processing chamber to undergo device formation processes (760-780). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: Surface planarization equipment of a semiconductor wafer safely transfers wafers to an unloading cassette. In addition to the unloading cassette, the surface planarization equipment includes a loading cassette configured to hold wafers awaiting surface planarization, an index table including a plurality of first rotary vacuum wafer chucks that receive wafers from the loading cassette, at least one grinding head disposed above the index table and operative to perform a planarization process on the wafers supported by the chucks, a cleaning and drying unit including a second wafer rotary vacuum chuck receiving the wafers from the index table after the planarization process is completed and from which the cleaned and dried wafers are transferred to the unloading cassette. A position detector includes one or more sensors disposed beside respective ones of the vacuum chucks to stop the chucks at desired positions.

Abstract: Disclosed is a wafer edge polishing system which improves the throughput and reduces the average processing cost. The system incorporates a wafer inspection unit. A wafer is polished in a wafer edge polishing unit and carried by a carrier unit to the wafer inspection unit where the polished surfaces of the wafer is inspected, and if it is judged as poorly polished, it is re-carried to the wafer edge polishing unit by the carrier unit.

Abstract: A wafer is pressed against a fixed abrasive and brought into sliding contact with the fixed abrasive. Thus, the wafer is polished. A surface of the fixed abrasive is dressed so as to generate free abrasive particles thereon. A liquid or a gas, composed of a mixture of liquid or inert gas and pure water or chemical liquid, is ejected onto the surface of the fixed abrasive during or after the dressing process.

Abstract: A method and apparatus for mechanically and/or chemical-mechanically planarizing and cleaning microelectronic substrates. In one embodiment, a processing medium for planarizing and finishing a microelectronic substrate has a planarizing section with a first body composed of a first material and a finishing section with a second body composed of a second material. The first body may have a relatively firm planarizing surface to engage the substrate, and the first body supports abrasive particles at the planarizing surface to remove material from the substrate during a planarizing cycle. The second body may have a relatively soft buffing or finishing surface clean the abrasive particles and other matter from the substrate during a finishing cycle. The planarizing and finishing sections may be fixedly attached to a backing film, or they may be attached to one another along abutting edges with or without the backing film.

Abstract: A system and method for treating a substrate by integrating the annealing of a metal-containing layer on a substrate as part of a chemical mechanical polishing process. In one embodiment, a system for treating a substrate generally includes an annealing station incorporated into a chemical mechanical polishing processing system that includes a deposition station utilized to form a metal-containing layer on the substrate.

Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus includes a chuck for holding the workpiece while exposing the treated surface, and a polishing component for polishing the treated surface of the workpiece held on the chuck. The polishing component includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.

Abstract: A substrate polishing system includes a delivery arm having a nozzle configured to combine a rinse fluid and a gas into an atomized spray, and to direct the atomized spray toward a polishing pad. The atomization process causes droplets of the rinse agent in the atomized spray to become negatively charged. The negative charge causes in the rinse agent to adhere to waste particles and slurry, which facilitates removal thereof from the polishing pad.

Abstract: In the planarization apparatus, an etching stage is installed in a body where a rough grinding stage and a finishing grinding stage are disposed, and the rough grinding, finishing grinding, and etching of a wafer are performed in the same planarization apparatus. A chuck for holding the wafer is moved in an order through the rough grinding stage, the finishing grinding stage and the etching stage while keeping holding the wafer. When the chuck is positioned at the etching stage, the chuck is moved up toward an etching vessel and the wafer that is held by the chuck is housed in the etching vessel. In this state, etching solution is projected on the wafer from a nozzle and the wafer is etched.

Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Abstract: A cutting machine includes two cutting means. In a front half of a housing, a chucking zone is located in a widthwise center. A cassette placing zone is located on one side of the chucking zone, and a cleaning zone is located on the other side of the chucking zone. In a latter half of the housing, a cutting zone is disposed in a widthwise center. Rotating shafts of the two cutting means extend straightly in a width direction in the rear half of the housing.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: A processing apparatus capable of grinding an arcuate groove (a groove having an arcuate shape in section) of various shapes defined in a work with a good accuracy. A pseudo-elliptic arcuate groove defined in a work is ground by a forming grindstone. The work is moved in a Y-axis direction (vertically on a paper sheet) in a state in which the forming grindstone is supported on a tool table for rotation and is moved in a X-axis direction (a direction perpendicular to the paper sheet) to abut against the arcuate groove, while rotating the work in a direction of an arrow with its axis L matched with an axis C of an indexer. Thus, it is possible to relatively move the forming grindstone to trace the arcuate groove, thereby accurately grinding the arcuate groove.

Abstract: An efficient method of cleaning various workpieces is the so-called wet blasting, by which the workpieces are exposed to a spraying of water with a content of hard macro particles. Optimally, this blasting medium should be recirculated, but this implies noticeable problems with respect to separation of cleaned-off dirt and worn-down blasting particles. The invention provides for a system for processing units enabling these problems to be overcome in a relatively simple manner for achieving a high efficiency and low costs of the combined system.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective body, and the reflective body is pressed against the polishing pad with the same pressure as that applied during the polishing of the wafer. In this state, the reflective body is irradiated via the window with a probe light emitted from the light source, and the spectroscopic intensity of the reflected light is obtained from the sensor as a reference spectrum. During the polishing of the wafer, the spectroscopic intensity of the reflected light from the wafer is successively obtained as measured spectra from sensor; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer is monitored on the basis of this intensity ratio.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.

Abstract: In a wafer polishing apparatus which polishes a wafer surface or in a wafer cleaner, there are provided a transfer and cleaning chamber which shuts off a wafer from the outside air and an inert gas supply device which fills an inert gas into the transfer and cleaning chamber. Thus, there are provided a polishing apparatus, a cleaner, a cleaning method and a wafer evacuation program which can prevent the oxidation and modification of a wafer surface in each step, such as the polishing step of a wafer, the transfer step after polishing, the cleaning step after polishing, the drying step after polishing, the inspection step after polishing, and the storage step after polishing.

Abstract: Chemical-mechanical planarizing machines and methods to maintain processing pads and other planarizing media used in planarizing microelectronic workpieces. In one embodiment, a planarizing machine can include a surfacing device attached to one of a carrier or a support member. The surfacing device is positioned to transmit a non-abrasive energy, such as ultrasonic waves, against the planarizing medium. The planarizing machine can include a controller that is operatively coupled to the surfacing device for activating the surfacing device at appropriate moments either before or during a planarizing cycle of a microelectronic workpiece. In another embodiment the controller can be a computer having a database containing instructions for causing the surfacing device to transmit the non-abrasive energy against the planarizing pad.

Abstract: An apparatus and method is provided for polishing work pieces such as semiconductor wafers. The apparatus includes a variable number of independent heads 20, platens 32 and polishing units 18. This polishing apparatus belongs to a group of polishing machines with wafers attached to the same heads 20 through all polishing steps without undesirable reloading from one head 20 to another between polishing steps. Each independent head 20 is automatically coupled to and decoupled from any of the polishing units 18 to optimize throughput and provide flexibility in accommodating different polishing processes. A head transfer subsystem 22 provides an independent means of transfer for each head 20, thus an infinite number of contemporaneous or overlapping polishing cycles can be completed on multiple wafers resulting in maximum processing throughput.

Abstract: A multi-head type polishing apparatus includes a polishing table having a polishing surface, a plurality of top rings for holding workpieces and pressing the workpieces against the polishing surface, and a carousel for supporting the top rings and indexing the top rings. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by the top rings, and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces. The polishing apparatus also has a pusher for transferring the workpieces between the rotary transporter and the top rings.

Abstract: An apparatus for performing semiconductor planarizing operations is disclosed. In an exemplary embodiment, the apparatus includes a carrier assembly for maintaining a workpiece therein in a face up orientation. A roller assembly includes a first cylindrical roller and a cylindrical second roller, the first and second rollers being linked to one another through a pair of arms. Each of the first and second rollers may be independently positioned with respect to a horizontal plane, the horizontal plane being substantially parallel to a top surface of the workpiece.

Abstract: A substrate cleaning apparatus is provided which comprises a box in which a substrate is cleaned with a cleaning liquid, and an exhaust system for exhausting the box, wherein the box is provided in its upper wall with an air intake opening and the exhaust system is fluidly connected to the box at a lower wall of the box so that air is introduced into the box through the air intake opening, flows down in the box passing around the substrate and finally exits the box through the exhaust system. A door is provided to close the air intake opening when an inside air pressure in the box becomes greater than an outside air pressure outside the box.

Abstract: An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.

Abstract: A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad, a platen, and a cleaning apparatus which provides a cleaning fluid for cleaning the polishing head. The cleaning apparatus includes a shaft located outside a periphery of the polishing pad, and an arm mounted to the shaft and extending over the polishing pad such that a bottom surface of the arm confronts the polishing surface of the polishing pad. Further, a cleaning fluid path is defined in the arm along a length of the arm, and first drop holes are defined in the arm which are fluidly connected to the cleaning fluid path and which drop cleaning fluid onto the polishing surface of the polishing pad.

Abstract: A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

Abstract: Apparatus and methods control the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier has a wafer mounting surface for positioning the wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector is oriented adjacent to the wafer mounting surface for detecting the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

Abstract: A device and method for providing precision alignment and support for an optical film measurement probe in the wafer rinse tank of a CMP polish tool. The device includes of a probe carrier, and spring loaded support guides attached to a support ring that supports and locates the mechanism in the rinse tank of the CMP tool. The probe carrier has multiple beveled bearing pads (three or more) that contact the rim of the rotating wafer chuck. Pressure from the chuck against these pads forces the probe carrier to maintain a fixed distance and orientation relative to the wafer while allowing the smooth rotation and motion of the wafer and chuck. Further, an integrated the wafer spray nozzles can be attached to the probe carrier that is located so as to minimize interference between wafer spraying and the probe carrier.

Abstract: In order to resolve problems of an increase in cost of transportation and vessels for polishing solutions to polish metal films, and of aging change of the polishing solutions, apparatus for preparing and mixing solutions of polishing materials without including abrasive are installed at a site the same as a site of polishing apparatus, an abrasive free slurry is supplied to the polishing apparatus and a metal film on a wiring substrate is polished to thereby form embedded metal wirings by which the cost of polishing metal can significantly be reduced and stability of the polishing solution is promoted.

Abstract: In a wafer polishing apparatus 1 according to this invention, waiting units 43 having upper-lower two-stage wafer placement tables each for temporarily keeping a wafer from a load/unload unit 3 to a polishing head 42 or vice versa are provided to a polishing unit 4, and the upper/lower stage wafer placement tables can move individually. A spindle-washing unit 44 for washing polishing heads is disposed inside a lower space below the waiting units.

Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus comprises chuck means for holding the workpiece while exposing the treated surface, and polishing means for polishing the treated surface of the workpiece held on the chuck means. The polishing means includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.