Abstract: A method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond with a first quantity of magnesium carbonate to form a first layer for forming a working surface, and combining a second quantity of magnesium carbonate to form a second layer adjacent to the first layer, forming an assembly. The method includes placing a quantity of silicon or aluminum in or adjacent to at least a portion of the assembly and sintering the assembly including the silicon or aluminum at high pressure and high temperature, causing the silicon or aluminum to infiltrate at least one layer of the assembly.

Abstract: Polycrystalline diamond cutting elements having enhanced thermal stability, drill bits incorporating the same, and methods of making the same are disclosed herein. In one embodiment, a cutting element includes a substrate having a metal carbide and a polycrystalline diamond body bonded to the substrate. The polycrystalline diamond body includes a plurality of diamond grains bonded to adjacent diamond grains by diamond-to-diamond bonds and a plurality of interstitial regions positioned between adjacent diamond grains. At least a portion of the plurality of interstitial regions comprise lead or lead alloy, a catalyst material, metal carbide, or combinations thereof. At least a portion of the plurality of interstitial regions comprise lead or lead alloy that coat portions of the adjacent diamond grains such that the lead or lead alloy reduces contact between the diamond and the catalyst.

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

Abstract: A method for the separation of diamond particle clusters into discrete diamond particles and/or into smaller diamond particle clusters comprising fewer diamond particles is disclosed. The diamond particle clusters are combined with at least one liquid phase organic or inorganic compound, or with a solution of at least one organic or inorganic compound in at least one solvent to form a reaction mixture. Mechanical means are then used to separate the diamond particle clusters into discrete diamond particles and/or into smaller clusters within the reaction mixture producing diamond particles with dangling bonds or free bonding sites on the surface of the diamond particles. The at least one organic or inorganic compound then reacts with these dangling bonds present on the diamond particle surface.

Abstract: A coated cutting insert for a chipforming material removal operation wherein the coated insert has a substrate and a coating scheme on the substrate. The coating scheme includes a CVD transition coating layer. The coating scheme further includes a CVD multi-layered coating scheme having a plurality of coating sets. Each one of the coating sets has an aluminum oxide coating layer and a nitrogen-containing coating layer.

Abstract: Polycrystalline elements include a substrate and a polycrystalline table attached to an end of the substrate. The polycrystalline table includes a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability, the at least a second region being interposed between the substrate and the first region. Methods of forming a polycrystalline element involve attaching a polycrystalline table including a first region of superabrasive material having a first permeability and at least a second region of superabrasive material having a second, lesser permeability to an end of a substrate, the at least a second region being interposed between the first region and the substrate. Catalyst material is removed from at least the first region of the polycrystalline table.

Abstract: The present invention provides a method for manufacturing a glass substrate for a magnetic disk or the like according to which surface roughnesses of main surfaces of a glass substrate can be reduced more than with currently available methods. In the present invention, by mirror-polishing (final finishing-polishing) the main surfaces of the glass substrate used in a magnetic disk, for example, using a polishing liquid containing organic-based particles made of a styrene-based resin, an acrylic resin, or a urethane-based resin, as polishing abrasive particles, surface roughnesses of the main surfaces of the substrate can be reduced more than with currently available methods.

Abstract: Embodiments of the invention are disclosed for methods of making polycrystalline diamond compacts having substrates including bonding features thereon and polycrystalline diamond bodies including complementary configurations, as well as embodiments of polycrystalline diamond compacts made using the same.

Abstract: A surface-coated boron nitride sintered body tool includes a cubic boron nitride sintered body and a coating film formed thereon. The coating film includes an A layer and a C layer. The A layer is formed of Ti1-xaMaxaC1-yaNya (where Ma is one or more of Cr, Nb and W; 0?xa?0.7; 0?ya?1). The C layer is formed of Al1-(xc+yc)CrxcMcycN (where Mc is one or more of Ti, V and Si; 0.2?xc?0.8; 0?yc?0.6; 0.2?xc+yc?0.8). The A layer is formed on an outermost surface of the coating film or between the outermost surface of the coating film and the C layer. A distance between the outermost surface of the coating film and an upper surface of the C layer is 0.1 ?m or more and 1.0 ?m or less.

Abstract: Embodiments relate to a polycrystalline diamond compact (“PDC”) including a polycrystalline diamond (“PCD”) table having at least two regions and being bonded to a fine grained cemented tungsten carbide substrate. In an embodiment, a PDC includes a cemented carbide substrate having a cobalt-containing cementing constituent cementing tungsten carbide grains together that exhibit an average grain size of about 1.5 ?m or less, and a PCD table having at least one upper region including diamond grains exhibiting an upper average grain size and at least one lower region adjacent to the upper region a lower average grain size that may be at least two times greater than the upper average grain size. The cemented carbide substrate includes an interfacial surface and a depletion zone depleted of the cementing constituent that extends inwardly from the interfacial surface to a depth of, for example, about 30 ?m to about 60 ?m.

Abstract: A surface-coated boron nitride sintered body tool is provided, in which at least a cutting edge portion includes a cubic boron nitride sintered body and a coating film formed on a surface of the cubic boron nitride sintered body. The coating film contains Si and includes a B layer formed by alternately stacking one or more of each of a B1 compound layer and a B2 compound layer that are different in composition. A ratio between an average thickness t1 of the B1 compound layers and an average thickness t2 of the B2 compound layers is defined as t2/t1 that satisfies a relation of 0.5<t2/t1?10.

Abstract: Diamond bodies and methods of manufacture are disclosed. Diamond bodies are formed from at least a bimodal, alternatively a tri-modal or higher modal, feedstock having at least one fraction of modified diamond particles with a fine particle size (0.5-3.0 ?m) and at least one fraction of diamond particles with coarse particle size (15.0 to 30 ?m). During high pressure—high temperature processing, fine particle sized, modified diamond particles in the first fraction preferentially fracture to smaller sizes while preserving the morphology of coarse particle sized diamond particles in the second fraction. Diamond bodies incorporating the two fractions have a microstructure including second fraction diamond particles dispersed in a continuous matrix of first fraction modified diamond particles and exhibit improved wear characteristics, particularly for wear associated with drilling of geological formations.

Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

Abstract: Provided is a coated tool exhibiting enhanced wear resistance and adhesiveness of an aluminum oxide layer and superior wear resistance and defect resistance. A cutting tool (1) in which at least a titanium carbonitride layer (8) and an aluminum oxide layer (10) having an ?-type crystalline structure are laminated in that order on a surface of a substrate (5). A surface-side Tc(116) in a surface-side peak is greater than a substrate-side Tc(116) in a substrate-side peak where Tc(116) is an orientation factor of the aluminum oxide layer (10) when comparing the substrate-side peak detected by measuring a portion on a substrate (5) side of the aluminum oxide layer (10) and the surface-side peak detected by measuring a portion on a surface side of the aluminum oxide layer (10) in X-ray diffraction analysis of the aluminum oxide layer (10).

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 ?m to about 1,000 ?m. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 ?m to about 1,000 ?m by annealing the pre-annealed metal thin film at a second temperature.

Abstract: A coated cutting tool includes a substrate and a surface coating, wherein the coating is a Ti(C,N,O) layer comprising at least one columnar fine-grained MTCVD Ti(C,N) layer with an average grain width of 0.05-0.4 ?m and an atomic ratio of carbon to the sum of carbon and nitrogen (C/(C+N)) contained in the MTCVD Ti(C,N) layer being on average 0.50-0.65. A method for manufacturing the coated cutting tool includes depositing the MTCVD Ti(C,N) layer.

Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.

Abstract: A surface-coated cutting tool according to the present invention includes a coating. The coating includes an ?-Al2O3 layer. Each of the ?-Al2O3 layers on a side of a rake face and a side of a flank face shows (001) orientation. In the ?-Al2O3 layer on the rake face side, a length LR3 of a ?3 crystal grain boundary exceeds 80% of a length LR3-29 of a ?3-29 crystal grain boundary and is not lower than 10% and not higher than 50% of a total length LR of all grain boundaries. In the ?-Al2O3 layer on the flank face side, a length LF3 of a ?3 crystal grain boundary exceeds 80% of a length LF3-29 of a ?3-29 crystal grain boundary and is not lower than 10% and not higher than 50% of a total length LF of all grain boundaries. A ratio LR3/LR3-29 is higher than a ratio LF3/LF3-29.

Abstract: A surface-coated cutting tool according to the present invention includes a coating. The coating includes an ?-Al2O3 layer. Each of the ?-Al2O3 layers on a side of a rake face and a side of a flank face shows (001) orientation. In the ?-Al2O3 layer on the rake face side, a length LR3 of a ?3 crystal grain boundary exceeds 80% of a length LR3-29 of a ?3-29 crystal grain boundary and is not lower than 10% and not higher than 50% of a total length LR of all grain boundaries. In the ?-Al2O3 layer on the flank face side, a length LF3 of a ?3 crystal grain boundary exceeds 80% of a length LF3-29 of a ?3-29 crystal grain boundary and is not lower than 10% and not higher than 50% of a total length LF of all grain boundaries. A ratio LR3/LR3-29 is lower than a ratio LF3/LF3-29.

Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.

Abstract: A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an ?-Al2O3 layer containing a plurality of ?-Al2O3 crystal grains. The ?-Al2O3 layer includes: a first region made up of an edge ridgeline, a region A of a rake face, and a region B of a flank face; a second region which is a region of the rake face except for the region A and covered with the coating; and a third region which is a region of the flank face except for the region B. The ?-Al2O3 layer satisfies a relation b?a>0.5, where a is an average value of a TC(006) in the first region in texture coefficient TC(hkl) and b is an average value of the TC(006) in the second region or the third region in texture coefficient TC(hkl).

Abstract: A surface-coated boron nitride sintered body tool is provided, in which at least a cutting edge portion includes a cubic boron nitride sintered body and a coating film formed on a surface of the cubic boron nitride sintered body. The coating film includes an A layer and a B layer. The A layer is formed of columnar crystals each having a particle size of 10 nm or more and 400 nm or less. The B layer is formed of columnar crystals each having a particle size of 5 nm or more and 70 nm or less. The B layer is formed by alternately stacking two or more compound layers having different compositions. The compound layers each have a thickness of 0.5 nm or more and 300 nm or less.

Abstract: An abrasive tool can include a bonded abrasive including a body and a barrier layer bonded to a major surface of the body. The body can include abrasive particles contained within a bond material. The barrier material can include a metal-containing film. In an embodiment, the barrier layer may further include a polymer-containing film. In another embodiment, the barrier layer may include a biaxially oriented material. The abrasive tool may be formed such that the barrier layer is formed in-situ with the formation of the bonded abrasive.

Abstract: Embodiments of the invention relate to polycrystalline diamond (“PCD”) fabricated by sintering a mixture including diamond particles and a selected amount of graphite particles, polycrystalline diamond compacts (“PDCs”) having a PCD table comprising such PCD, and methods of fabricating such PCD and PDCs. In an embodiment, a method includes providing a mixture including graphite particles present in an amount of about 0.1 weight percent (“wt %”) to about 20 wt % and diamond particles. The method further includes subjecting the mixture to a high-pressure/high-temperature process sufficient to form PCD.

Abstract: The present invention provides a cerium oxide based composite polishing powder and a preparation method thereof. The polishing powder contains the element magnesium in an amount of 0.005 wt %-5 wt % to magnesium oxide meter. The preparation method includes: (1) uniformly mixing a salt solution containing cerium serving as the main component of the polishing powder; (2) uniformly mixing a precipitating agent of an aqueous magnesium bicarbonate solution with the mixed solution prepared in step (1) to obtain a slurry; (3) aging the slurry prepared in step (2) for 0-48 h while the temperature of the slurry is kept at 30-90 degrees centigrade, and filtering the aged slurry to obtain the precursor powder of the polishing powder; (4) calcinating the precursor powder at 600-1000 degrees centigrade, then dispersing and separating the calcinated precursor powder to obtain the polishing powder. The present invention improves the polishing performance and the suspension performance of polishing powder.

Abstract: A coated cutting tool has a substrate and a coating layer. At least one layer of the coating layer is a coarse grain layer with an average layer thickness of 0.2 to 10 ?m and an average grain diameter in excess of 200 nm measured at the direction parallel to the interface of the coating layer. A composition of the layer is represented by (AlaTibMc)X, wherein M represents at least one of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Y, B and Si, X represents at least one of C, N and O, and a, b and c represents atomic ratios of Al, Ti and M relative to one another such that 0.30?a?0.65, 0.35?0.70, 0?c?0.20 and a+b+c=1.

Abstract: A shear thickening formulation and composite material employing the same are provided. The shear thickening formulation includes inorganic particles and polyethylene glycol. The inorganic particles and the polyethylene glycol have a weight ratio of 3 to 4. The inorganic particles can be silica, aluminum oxide, silicon carbide, nano diamond, or a combination thereof.

Abstract: A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

Abstract: Embodiments of the invention relate to thermally-stable polycrystalline diamond compacts (“PDCs”), and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate and a pre-sintered polycrystalline diamond (“PCD”) table bonded to the substrate. The pre-sintered PCD table includes bonded diamond grains defining a plurality of interstitial regions. The pre-sintered PCD table further including a first region remote from the substrate including a nonmetallic catalyst and a metallic catalyst each of which is disposed interstitially between the bonded diamond grains thereof, and a second region bonded to the substrate including a metallic-catalyst infiltrant disposed interstitially between the bonded diamond grains thereof. A nonplanar boundary is located between the first region and the second region.

Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.

Abstract: To provide a cutting tool that includes a coating layer capable of exhibiting optimum cutting performance in each of a cutting edge, rake face, and flank face. A cutting tool (1) includes a substrate (2) that is coated with a coating layer (6) composed of SiaM1-a(C1-xNx), where M represents at least one element selected from Ti, Al, Cr, W, Mo, Ta, Hf, Nb, Zr, and Y, 0.01?a?0.4, and 0?x?1, and that has a cutting edge (5) at an intersecting ridge line of a rake face (3) and a flank face (4). The Si content ratio in the coating layer (6) on the rake face (3) is higher than that on the cutting edge (5).

Abstract: Systems, methods, and articles of manufacture related to composite materials are discussed herein. These materials can be based on a mixture of diamond particles with a matrix and fibers or fabrics. The matrix can be formed into the composite material through optional pressurization and via heat treatment. These materials display exceptionally low friction coefficient and superior wear resistance in extreme environments.

Abstract: Problem: To provide a cutting tool that exhibits superior chipping resistance and wear resistance. Resolution means: A cutting tool 1 is provided with a base 2, and a coating layer 6 comprising columnar crystals 7 that cover the surface of the base 2. A Cutting edge 5 is formed at the crossing ridge line of a rake face 3 and a flank face 4. The average inclination angle (?2) of the flank face 4, in the longitudinal direction of the columnar crystals 7 with respect to the direction orthogonal to the surface of the base 2, is greater than the average inclination angle (?1) of the rake face 3, in the longitudinal direction of the columnar crystals 7 with respect to the direction orthogonal to the surface of the base 2.

Abstract: A polycrystalline diamond body, and a method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond particles with a first quantity of magnesium carbonate to form a first layer in an enclosure, the first layer having a working surface, and placing a second quantity of magnesium carbonate in the enclosure forming a second layer, the first layer and the second layer forming an assembly. A quantity of at least one of silicon or aluminum is mixed in with or placed adjacent to at least one of the first layer or the second layer. The assembly, including the at least one of silicon or aluminum, is sintered at high pressure and high temperature, causing the at least one of silicon or aluminum to infiltrate at least one layer of the assembly, forming a polycrystalline diamond body.

Abstract: A method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond with a first quantity of magnesium carbonate to form a first layer for forming a working surface, and combining a second quantity of magnesium carbonate to form a second layer adjacent to the first layer, forming an assembly. The method includes placing a quantity of silicon or aluminum in or adjacent to at least a portion of the assembly and sintering the assembly including the silicon or aluminum at high pressure and high temperature, causing the silicon or aluminum to infiltrate at least one layer of the assembly.

Abstract: A hard-coated tool comprising a titanium carbonitride layer formed directly on a WC-based cemented carbide substrate by a chemical vapor deposition method; the titanium carbonitride layer having a composition comprising 74-81% by mass of titanium, 13-16% by mass of carbon and 6-10% by mass of nitrogen; the titanium carbonitride layer having a structure comprising columnar crystal grains having an average transverse cross section diameter of 0.01-0.22 ?m; a layer of W diffused from the substrate to the titanium carbonitride layer having an average thickness of 30-200 nm; and the titanium carbonitride layer having an X-ray diffraction peak of a (422) plane in a 2? range of 122.7-123.7°.

Abstract: A coated cutting tool comprising substrate and a coating, wherein the coating comprises a layer of MTCVD TiCN, and a layer of ?-Al2O3, wherein the ?-Al2O3 layer exhibits an X-ray diffraction pattern, as measured using CuK? radiation, the (hkl) reflections used are (012), (104), (110), (113), (116), (300), (214) and (0 0 12), and the TC(0 0 12) is higher than 5 and a full width half maximum (FWHM) of a rocking curve peak of the (0 0 12) plane of the ?-Al2O3 is lower than 30°.

Abstract: A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5.

Abstract: Polycrystalline compacts include non-catalytic, non-carbide-forming particles in interstitial spaces between interbonded grains of hard material in a polycrystalline hard material. Cutting elements and earth-boring tools include such polycrystalline compacts. Methods of forming polycrystalline compacts include forming a polycrystalline material including a hard material and a plurality of particles comprising a non-catalytic, non-carbide-forming material. Methods of forming cutting elements include infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of non-catalytic, non-carbide-forming particles.

Abstract: A surface-coated cutting tool with a body and hard coating layer is provided. (a) The hard coating layer is made of a complex nitride layer of Al and Cr. (b) The hard coating layer deposited on a region from a cutting edge to a location 100 ?m from the cutting edge toward an opposite side thereof has a granular crystal structure. The average grain size of granular crystals on a surface of the hard coating layer on the region is 0.2-0.5 ?m. The average grain size of granular crystals at an interface between the cutting tool body and the hard coating layer on the region is smaller than the average grain size on the surface the hard coating layer in an extent of 0.02-0.1 ?m. The crystal grain size length ratio of crystal grains whose size is 0.15-20% or less.

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

Abstract: The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.

Abstract: Provided is a method for manufacturing an abrasive agent including a dispersant and also including cerium oxide as a main abrasive material component. The method involves: a step for recovering an abrasive agent component by salting out a spent abrasive material slurry by using a cation of an element of the first Group or second Group with an ionic radius of 80 pm to 160 pm in six-coordinate conversion, and solid-liquid separating the cerium oxide by coagulation and sedimentation; and a step for adding a dispersant including an anionic polymer to the abrasive agent component after the recovery.

Abstract: In an embodiment, a polycrystalline diamond compact (“PDC”) comprises a substrate and a pre-sintered polycrystalline diamond (“PCD”) table including a plurality of bonded diamond grains defining a plurality of interstitial regions, an upper surface, and a back surface that is bonded to the substrate. The pre-sintered PCD table includes a first thermally-stable region extending inwardly from the upper surface, and a second region located between the first thermally-stable region and the substrate. The second region exhibits a thermal stability that is less than that of the first thermally-stable region, and includes at least one interstitial constituent disposed interstitially between the bonded diamond grains thereof. The at least one interstitial constituent may include at least one silicon-containing phase.

Abstract: A composite abrasive wheel comprises primary and secondary abrasive portions. The primary abrasive portion comprises shaped ceramic abrasive particles retained in a first organic binder. The secondary abrasive portion is bonded to the primary abrasive portion, and comprises secondary crushed abrasive particles retained in a second organic binder. The primary abrasive portion comprises a larger volume percentage of the shaped ceramic abrasive particles than the secondary abrasive portion. A central aperture extends through the composite abrasive wheel.

Abstract: Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table having a structure for enhancing at least one of abrasion resistance, thermal stability, or impact resistance. In an embodiment, a PDC includes a PCD table. The PCD table includes a lower region including a plurality of diamond grains exhibiting a lower average grain size and at least an upper region adjacent to the lower region and including a plurality of diamond grains exhibiting an upper average grain size. The lower average grain size may be at least two times greater than that of the upper average grain size. The PDC includes a substrate having an interfacial surface that is bonded to the lower region of the PCD table. Other embodiments are directed methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.

Abstract: A process for making nanoparticles of biocompatible materials is described, wherein an aqueous reaction mixture comprising cerous ion, an ?-amino acid, an oxidant and water is provided along with temperature conditions to effectively form nanoparticles. These biocompatible nanoparticles may be further conjugated to biologically active agents, such as plasmid DNA, siRNA or proteins, such that a cell transfection agent is formed.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: Methods for removing, or leaching, cobalt or other diamond-diamond bonding catalysts from polycrystalline diamond compacts (PDCs) or other structures formed from polycrystalline diamond include leaching under conditions that simulate use of PDCs in a hot hole drilling environment. A leaching agent may be formulated, when used under appropriate conditions, to remove or substantially remove cobalt or another catalyst from polycrystalline diamond without dissolving, degrading or otherwise attacking a substrate that supports or carries the polycrystalline diamond. The leaching agent may include one or more components that mimick the chemicals or conditions to which a PDC would be exposed in a hot hole drilling environment. Polycrystalline diamond structures from which cobalt or another diamond-diamond bonding catalyst has been removed or substantially removed are also disclosed, as are systems for leaching cobalt or other diamond-diamond bonding catalysts from polycrystalline diamond.