Abstract: A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge.

Abstract: An oil filled pressure transducer which exhibits reduced backpressure and utilizes a smaller volume of oil employs a glass pre-form which has a plurality of pin accommodating apertures and has an oil tube accommodating aperture. There are a plurality of contact pins inserted into the pin accommodating apertures and which extend from the top to the bottom surfaces of the pre-form. There is an oil fill tube inserted into the oil tube accommodating aperture, which oil fill tube extends from the bottom to the top surface of the pre-form with one end of the tube extending above the top surface of the pre-form. There is a glass alignment plate which has an alignment aperture for encircling the extended oil fill tube and has a sensor accommodating shaped aperture located at a predetermined position from said alignment aperture.

Abstract: There is disclosed an internally switched multiple range transducer. The transducer employs a plurality of individual pressure sensors or Wheatstone bridges fabricated from semiconductor materials and utilizing piezoresistors. Each sensor is designed to accommodate accurately a given pressure range, therefore, each sensor is selected to provide an output when an applied pressure is within its accommodated range. As soon as the pressure exceeds the range, then another sensor is employed to produce an output. Each of the sensors, or each separate transducer, is coupled to a switch or other device to enable the selection of one of the plurality of sensors to operate within its given pressure range when the applied pressure is in that range. In this manner one obtains pressure measurements with a high degree of accuracy across a relatively large pressure range.

Abstract: A combined wet-wet differential transducer and a gage pressure transducer located in the same housing, comprising a semiconductor chip which comprises a gage sensor chip on one section and a differential sensor chip on a second section. Each sensor chip has a Wheatstone bridge comprising piezoresistors and is responsive to an applied pressure. The gage chip and the differential chip are placed in a header having a front section and a back section adapted to receive a first and second pressure, respectively. The sensors are in communication with first and second pressure ports such that the absolute sensor provides an output indicative of a pressure applied to a first port and the differential sensor provides an output indicative of the pressure difference between the first and second pressure ports.

Abstract: The present invention discloses a pressure measurement device comprising: a substrate that includes at least one pressure sensing module and at least one fluid-conductive channel, wherein each channel has a first aperture and a second aperture. The substrate is flexible such that the pressure measurement device is conformably adjustable onto an object's surface. The first aperture is located on the substrate such that when the substrate is suitably adjusted onto the object's surface, the first aperture is open to the exterior of the object's surface. The pressure sensors module is operatively connected to at least one of the second apertures, such that the at least one pressure sensing module is generally being subjected to the pressure being present at the first aperture.

Abstract: A single wire interface for a transducer transmits the transducer output as a frequency modulated signal over one single wire during one interval. During a second interval a reference signal is transmitted as a frequency modulated signal. Both the transducer output and the reference signal output are processed by the same circuitry during the respective intervals to provide both frequency modulated signals. The frequencies of the two signals are measured and then the ratio of the two periods which is the reciprocal of the two frequencies is calculated. This ratio is the direct measure of the output of the transducer and when provided eliminates sources of errors.

Abstract: A combined wet-wet differential transducer and a gage pressure transducer located in the same housing, comprising a semiconductor chip which comprises a gage sensor chip on one section and a differential sensor chip on a second section. Lach sensor chip has a Wheatstone bridge comprising piezoresistors and is responsive to an applied pressure. The gage chip and the differential chip are placed in a header having a front section and a back section adapted to receive a first and second pressure, respectively. A central section adjoins the front and back sections to form an H shaped header. The sensors are in communication with first and second pressure ports such that the absolute sensor provides an output indicative of a pressure applied to a first port and the differential sensor provides an output indicative of the pressure difference between the first and second pressure ports.

Abstract: A method and apparatus are described for fabricating an exposed backside pressure sensor (30) which protects interior electrical components (37) formed on a topside surface of a pressure sensor transducer die (31) from corrosive particles using a protective gel layer (38) and molding compound (39), but which vents a piezoresistive transducer sensor diaphragm (33) formed on a backside of the pressure sensor transducer die (31) through a vent hole (42) formed in an exposed die flag (36), enabling the sensor diaphragm (33) to directly sense pressure variations without the influence of a protective gel.

Abstract: A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

Abstract: A pressure transducer has an H-shaped header having a front and a back section. The front and back sections are of equal diameter and are circular. Each front and back section has a depression with a diaphragm covering the depression. Each diaphragm is of equal size and the depressions communicate one with the other via a central channel in the central arm of the H. A pressure sensor communicates with the channel, where the pressure sensor responds to a first pressure applied to the first diaphragm and a second pressure applied to the second diaphragm. The pressure sensor produces an output equal to the difference in pressure. The differential pressure inducer having both diaphragms of the same size and still enabling leads from the sensor to be brought out.

Abstract: A multi-range pressure sensor apparatus and method that provide multiple signal paths for detecting a broad range of pressures with a high accuracy. A pressure transducer can be configured to include the use of a pressure sense die with piezoresistive elements integrated into the sensor die and in a Wheatstone bridge configuration. A sensed output signal from the sense die can be transferred to one or more amplifier circuits. A programmable compensation circuit can be utilized to multiplex different amplified output signals from each of the amplifier circuits and to provide a digital output. A memory associated with the programmable compensation circuit provides separate compensations, which are stored for each of the different signal paths and removes errors due to amplifier gain and offset.

Abstract: A combined wet-wet differential transducer and a gage pressure transducer are located in the same housing. A semiconductor chip which is formed from a single substrate, has located thereon an absolute or gage sensor chip on one section and a delta or differential sensor chip on a second section. Each sensor chip has a Wheatstone bridge arrangement comprising piezoresistors and responsive to an applied pressure. The absolute or gage chip, as well as the differential or delta chip are placed in a header having a front section and a back section. Each section has an outer surface with a central section joining the front and back sections to form an H shaped header. The front section outer surface has a depression of a given area with a first flexible isolation diaphragm covering the depression.

Abstract: A mechanical-to-electrical sensing structure is provided with first and second movable blocks. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. At least a first gage link is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gage link. Electrochemistry is used to define the at least first gage.

Abstract: A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Abstract: The invention relates to a piezoelectric pressure sensor comprising piezoelectric measuring elements located in a housing, which are pre-stressed between the housing base and a membrane provided at the pressured side of the housing. According to the invention the piezoelectric measuring elements are placed on the outside of a pre-stressing element, which is located essentially along the longitudinal axis of the sensor.

Abstract: A sensor array for a pressure transducer having a diaphragm with an active region, and capable of deflecting when a force is applied to the diaphragm. The sensor array disposed on a single substrate, the substrate secured to the diaphragm. The sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm. The sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors dielectrically isolated from the substrate.

Abstract: A non-invasive dry coupled disposable/reusable ultrasonic sensor has a housing and a piezoelectric element at one end of the housing to which connected signal leads are connected that extend out from the housing. A piece of double-sided adhesive tape has one adhesive side secured directly to the face at the one end of the housing with the other adhesive side to be secured directly to the outer surface of a pipe or vessel. The tape can cover the entire face of the one end of the housing or only that part that the piezoelectric element faces.

Abstract: A pressure sensor according to the present invention comprises: a differential pressure diaphragm, which is provided to a center part of a sensor chip; a differential pressure gauge, which is provided to a perimeter edge part of the differential pressure diaphragm and is formed in radial directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the first differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in perimeter directions, which are perpendicular to the radial directions; a differential pressure gauge, which is provided in the vicinity of the differential pressure gauge and is provided in the perimeter directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in the radial directions; a static pressu

Abstract: There is disclosed a redundant pressure sensing chip which includes first and second redundant devices. Each pressure sensing device produces an output proportional to applied pressure irrespective of vibration/acceleration of the device. Each device also provides an output proportional to pressure and because of the nature of the devices, thermal effects as well as acceleration and the vibration are canceled. Based on chip operation and subtracting the signals from the two diaphragms, acceleration/vibration is canceled but also the effects of absolute pressure and differential pressure is also canceled. Therefore the chip can be used as a redundant absolute pressure sensor as well as a differential pressure sensor.

Abstract: A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.

Abstract: A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Abstract: To provide a double-ended tuning fork type piezoelectric resonator that includes: a piezoelectric element having two arm portions disposed in parallel, a first supporting portion that support one ends of each of the arm portions, a second supporting portion that support the other ends of each of the arm portions; and an exciting electrode formed on a surface of each of the arm portions, and has a structure suitable for being built into a pressure sensor as a pressure sensitive element. A double-ended tuning fork type piezoelectric resonator includes: a piezoelectric element 3 having two arm portions 4 disposed in parallel and apart from each other, and a first supporting portion 5 and a second supporting portion 6 that respectively support one ends and the other ends of each of the arm portions; and an exciting electrode 7 formed on a surface of each arm portion.

Abstract: A single pressure sensing capsule has a reference pressure ported to the rear side of a silicon sensing die. The front side of the silicon sensing die receives a main pressure at another port. The silicon sensing die contains a full Wheatstone bridge on one of the surfaces and within the active area designated as the diaphragm area. Thus, the difference of the main and reference pressure results in the sensor providing an output equivalent to the differential pressure, namely the main pressure minus the reference pressure which is the stress induced in a sensing diaphragm. In any event, the reference pressure or main pressure may be derived from a pump pressure which is being monitored. The pump pressure output is subjected to a pump ripple or a sinusoidally varying pressure. In order to compensate for pump ripple, one employs a coiled tube. The tube length is selected to suppress the pump ripple as applied to the sensor die.

Abstract: A pressure sensing apparatus (1) includes an elastically deformable pressure-sensitive diaphragm assembly (13) having a pressure-sensitive metal or metal alloy diaphragm (14). A functional filled dielectric layer (25) is on the diaphragm and includes a base dielectric material and at least one CTE raising filler. A CTE of the functional filled dielectric layer provides a CTE @ 800° C.?8 ppm/° C., such as ?10 ppm/° C. A plurality of piezoresistive elements (27) are on the functional filled dielectric layer (25).

Abstract: A compact absolute and gage pressure transducer consists of two sensors made from the same silicon wafer and selected to be adjacent to each other on the wafer. The transducer contains a common header which has a first input port for receiving a first pressure and a second input port for receiving a second pressure. The second input port is directed through a reference tube into the hollow of the housing to apply the pressure from the reference tube to the common sensor arrangement. The first input port is directed from another surface of the housing to direct that pressure to both sensor devices. One sensor device operates as a gage sensor which produces an output proportional to the difference between one input pressure and the other input pressure while the other sensor on the same chip produces an absolute output. The sensor chip is associated with a sensor header, which header is positioned in the housing and which header is fabricated from glass.

Abstract: A method of manufacturing a pressure sensor is provided whereby the pressure sensor includes a joint, a diaphragm, and an adapter disposed between the joint and the diaphragm. The adapter includes an axis portion and a flange projecting in a radial direction from the axis portion. The axis portion is disposed such that one end does not interfere with the joint and the other end is welded to the diaphragm. The diaphragm is welded to the adapter and the welded portion the welded portion is positioned on an inner side of an end face of the joint. The joint is caulked to a peripheral edge of the flange of the adapter.

Abstract: A pressure sensor comprises a sensor platform; a measuring membrane, or diaphragm, which is held by the sensor platform, and can have a pressure applied to it and is deformable as a function of pressure; and at least two resistance elements having an A1xGa1?xN layer. At least a first resistance element of the at least two resistance elements is arranged on the measuring membrane, or diaphragm and has a defomation-dependent resistance value. The pressure sensor can be operated using a measurement circuit to register a signal which depends on the resistance values of the at least two resistance elements in the plane of the A1xGa1?xN layer. Four resistance elements are preferably provided in a full bridge.

Abstract: There is disclosed a header for a differential pressure transducer. The header has a cylindrical sensor housing section which has a front and a back surface. The front surface has a sensor accommodating recess. There is a plurality of terminal pins extending from the front surface and directed through the housing to extend from said back surface. The pins are arranged in a semi-circular pattern, said sensor housing having a stem aperture and cylindrical wall. A stem housing is positioned in the stem aperture and is brazed thereto. The stem housing has a stem passageway directed through the housing which communicates with a passageway in the cylindrical sensor housing. The cylindrical sensor recess contains a sensing device which receives a first input pressure on one diaphragm surface of the sensing device and a second input pressure on a second surface of the diaphragm to produce a differential output pressure. The header, as indicated, is rugged and simple to use and produce.

Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.

Abstract: A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge.

Abstract: A pressure restrictor for use with a pressure sensing element comprising a cylindrical member of a given diameter and length having a plurality of apertures directed from a first end to a second end is disclosed. A pressure restrictor housing holds and positions the cylindrical member in close proximity to the pressure sensing element at the second end by clamping the pressure restrictor between the housing and element. The apertures provided in the pressure restrictor are the sole path for application of pressure to the sensing element. The sensing element is a double diaphragm silicon sensor where one diaphragm is exposed to pressure and the other diaphragm is not exposed to pressure. Each diaphragm has located thereon a half-bridge wherein both half bridges are connected to provide a full bridge. The full bridge provides an output strictly proportional to pressure.

Abstract: A pressure transducer has an H-shaped cross-sectional header having a front and a back section. The front and back sections are of equal diameter and are circular. Each front and back section has a depression with an isolation diaphragm covering the depression. Each diaphragm is of equal size and the depressions communicate one with the other via a central channel in the central arm of the H. A pressure sensor communicates with the channel, where the pressure sensor responds to a first pressure applied to the first isolation diaphragm and a second pressure applied to the second isolation diaphragm. The pressure sensor produces an output equal to the difference in pressure. The differential pressure transducer having both diaphragms of the same size and still enabling leads from the sensor to be brought out.

Abstract: A pressure sensing system positions a microelectromechanical (MEMS) diaphragm of a MEMS pressure sensor die in a housing to indirectly sample pressure state of a fluid being measured. A second housing diaphragm is used to make direct contact with the fluid being measured. Pressure state of the fluid being measured is transferred from the housing diaphragm through an electrically insulating intermediary fluid to the MEMS diaphragm thereby allowing the MEMS pressure sensor die to indirectly sample pressure state of the fluid being measured. Electrically conductive support members and electrically conductive solid vias are used to electrically couple circuitry of the MEMS pressure sensor die to external wires outside the housing.

Abstract: A pressure transducer has an H-shaped header having a front and a back section. The front and back sections are of equal diameter and are circular. Each front and back section has a depression with a diaphragm covering the depression. Each diaphragm is of equal size and the depressions communicate one with the other via a central channel in the central arm of the H. A pressure sensor communicates with the channel, where the pressure sensor responds to a first pressure applied to the first diaphragm and a second pressure applied to the second diaphragm. The pressure sensor produces an output equal to the difference in pressure. The differential pressure inducer having both diaphragms of the same size and still enabling leads from the sensor to be brought out.

Abstract: Various embodiments and methods relating to a pressure sensor having a flexure supported piezo resistive sensing element are disclosed.

Abstract: A pressure sensor includes a housing portion with a fluid inlet and a polymer element within the housing portion. The polymer element may be coated with piezoresistive material to form a first resistor and may have associated electrodes. The polymer element includes a first resistance value that changes to a second resistive value in a response to a predetermined condition. The pressure sensor may also include a second polymer element that includes a first resistance value that changes to a second resistive value in a response to a predetermined condition.

Abstract: A semiconductor pressure sensor includes: a first substrate; a buried insulating film laminated on the first substrate; a second substrate laminated on the buried insulating film; a plurality of electrodes including a lower electrode and at least two upper electrodes, the lower electrode being formed on the second substrate; and a piezoelectric film laminated on the lower electrode and having the upper electrodes formed thereon. In the sensor, there is removed at least a portion of a region of the first substrate corresponding to a region of the second substrate including the piezoelectric film and the electrodes.

Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.

Abstract: A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.

Abstract: A high pressure transducer has a metal housing with a main inlet high pressure port at one end and a reference pressure port at the other end. The ports communicate with a central hollow of the housing. Positioned in the hollow and communicating with the main inlet port is a first header welded to the housing and containing a first sensor device. Also positioned in the hollow and communicating with the reference pressure port is a second header also welded to the housing and having a second sensor device. There is another high pressure port on the housing and located between the inlet and reference ports to receive a main inlet high pressure as applied to said main inlet port and when a reference pressure is applied to said reference port. The applied pressures cause the first header weld to experience zero stress due to the application of the same main pressure to both the main inlet port and another pressure port.

Abstract: A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge.

Abstract: The invention relates to a pressure sensor with a carrier (2), which in an inner region comprises a membrane (4) on which at least one first measurement element (R1?) for detecting a pressure impingement of the membrane (4) is arranged, wherein additionally at least one second measurement element (R3?) for detecting a pressure impingement of the membrane (4) is arranged on the membrane, wherein the first measurement element (R1?) and the second measurement element (R3?) are arranged distanced differently far from the edge of the membrane, and the output signals of the first and the second measurement element (R1?, R3?) are evaluated together in a manner such that the two measurement elements (R1?, R3?) detect a differential pressure acting on the membrane (4), and thereby compensate the influence of the system pressure acting on both sides of the membrane (4).

Abstract: A micro electrical mechanical system (MEMS) pressure sensor includes a base structure defining an opening, a plurality of support members coupled to the base structure, a thin-film diaphragm supported by the support members, and at least one strain-sensitive member associated with the at least one support member.

Abstract: An absolute pressure sensor includes a sense die with a reference chamber on a top side thereof. The reference chamber comprises a precisely fabricated beam that limits the travel of a diaphragm. The beam can be positioned in a cap or cover member of the sense die, thereby allowing the sense die diaphragm to move freely for a particular distance. Over this distance, the sense die will have one sensitivity. When the sense die is pressurized to a certain point, the diaphragm moves until it contacts the beam member in the cap or cover. When the diaphragm hits the beam, the sensitivity of the sense die changes, thereby allowing a smaller voltage out for the greater pressure in. Such an arrangement permits the sensor to provide a function that accurately measures low pressure and measures a higher pressure without utilizing a linear scale.

Abstract: A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.

Abstract: This disclosure provides methods and apparatuses to monitor strain in a steel pipe with reduced or eliminated disruption of the insulative and anti-corrosive layers or coatings that cover the pipe. The methods and apparatuses can include an attachment scheme that is less intrusive and less sensitive to dilation of the insulation layer on the pipe than previous strain monitoring solutions. Additionally, methods and apparatuses can reduce corrosion by virtue of the reduction in the number and volume of metallic components.

Abstract: A MEMS-based silicon CTD sensor for ocean environment is presented. The sensor components are a capacitive conductivity sensor, a gold doped silicon temperature sensor, and a multiple diapghram piezoresistive pressure sensor. The sensor elements have further been packaged to protect them from harsh marine environment. The sensor components showed good linear response, resolution and mechanical integrity to the harsh ocean environment.

Abstract: A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Abstract: The inventive circuitry on a semiconductor chip includes a first functional element having a first electronic functional-element parameter that exhibits a dependence relating to the mechanical stress present in the semiconductor circuit chip in accordance with a first functional-element stress influence function. The first functional element provides a first output signal based on the first electronic functional-element parameter and mechanical stress. A second functional element has a second electronic functional-element parameter that exhibits a dependence in relation to the mechanical stress present in the semiconductor circuit chip in accordance with a second functional-element stress influence function. The second functional element is configured to provide a second output signal based on the second electronic functional-element parameter and the mechanical stress.

Abstract: A semiconductor chip includes a first functional element having a first electronic functional-element parameter exhibiting a dependence relating to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a first output signal, a second functional element having a second electronic functional-element parameter exhibiting a dependence in relation to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a second output signal in dependence on the second electronic functional-element parameter and the mechanical stress, and a combination means for combining the first and second output signals to obtain a resulting output signal exhibiting a predefined dependence on the mechanical stress present in the semiconductor circuit chip, the first and second functional elements being integrated on the semiconductor circuit chip and arranged, geometrically, such that that the first and second functional-element stress influence functions ar