Abstract: A MEMS based pressure sensor for flow measurements includes a pressure sense die located between a media seal and a conductive seal. Such a system includes a pressure sense die located between a media seal and a conductive seal. A sensing diaphragm is generally associated with the pressure sense die, wherein the sensing diaphragm deflects when a pressure is applied thereto. An impedance circuit is generally embedded with one or more resistors on the sensing diaphragm to which the pressure to be detected is applied. An ASIC is generally associated with the impedance circuit and the sense die, wherein the ASIC is placed on a lead frame for signal conditioning in order to detect a change in the pressure.

Abstract: The present invention discloses a pressure measurement device comprising: a substrate that includes at least one pressure sensing module and at least one fluid-conductive channel, wherein each channel has a first aperture and a second aperture. The substrate is flexible such that the pressure measurement device is conformably adjustable onto an object's surface. The first aperture is located on the substrate such that when the substrate is suitably adjusted onto the object's surface, the first aperture is open to the exterior of the object's surface. The pressure sensors module is operatively connected to at least one of the second apertures, such that the at least one pressure sensing module is generally being subjected to the pressure being present at the first aperture.

Abstract: In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

Abstract: A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.

Abstract: An air data system is described that includes a cone-shaped probe, a plurality of pressure transducers, and a processing device. The cone-shaped probe includes a first pressure port formed in a substantial tip of the probe and extending therethrough, and a plurality of pressure ports formed in a substantially evenly spaced circular pattern about a sloped surface of the probe and extending through the probe. The plurality of pressure transducers are each configured to receive at least one pressure transferred through at least one of the pressure ports and output one or more signals related to the pressures sensed. The processing device is configured to receive signals originating from the transducers. The processing device is further configured to calculate a static pressure, an angle of attack, and an angle of sideslip based on the received signals.

Abstract: A method for compensation for influences, which interfere with the measurement accuracy, in measurement devices of the vibration type, comprising a measurement tube through which a fluid medium can flow and which is caused to oscillate mechanically, acting as an oscillation body, by an excitation unit, whose oscillation behavior, which changes as a function of the flowrate and/or the viscosity and/or the density of the fluid medium, is detected by at least one oscillation sensor in order to determine the flowrate, wherein the material strain in the measurement tube is detected by means of at least one sensor, from which an indicator value for the influence causing the material strain is calculated in order to correct the measurement signal, by signal processing, from the indicator value obtained in this way.

Abstract: An absolute pressure sensor includes a sense die with a reference chamber on a top side thereof. The reference chamber comprises a precisely fabricated beam that limits the travel of a diaphragm. The beam can be positioned in a cap or cover member of the sense die, thereby allowing the sense die diaphragm to move freely for a particular distance. Over this distance, the sense die will have one sensitivity. When the sense die is pressurized to a certain point, the diaphragm moves until it contacts the beam member in the cap or cover. When the diaphragm hits the beam, the sensitivity of the sense die changes, thereby allowing a smaller voltage out for the greater pressure in. Such an arrangement permits the sensor to provide a function that accurately measures low pressure and measures a higher pressure without utilizing a linear scale.

Abstract: A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezoresistors coupled in a Wheatstone bridge configuration and being suitable for providing a second output being indicative of an absolute line pressure. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output.

Abstract: A sensor and insertion assembly 2 is used for intravascular measurement of pressure in a living body. The assembly includes, a sensor chip 6 having a substrate body 8 with a recess covered by a pressure sensitive film 10 thereby forming a cavity 12. A piezoelectric element, preferably in the form of a piezoelectric film 14, is arranged in connection with the pressure sensitive film, and energy is applied to the piezoelectric element such that acoustic waves are generated in the element. The piezoelectric element is arranged to generate an output signal, representing the pressure at the film, in dependence on the measured properties of the acoustic waves related to the deflection of the pressure sensitive film.

Abstract: A pressure sensor is constructed of a plastic package. The plastic package incorporates in the same material a sensing diaphragm including tensile and compression regions. Deposited on the diaphragm are metal electrodes and a polymer film having piezoresistive properties. The electrodes and/or the polymer film are directly printed onto the plastic package without the use of a mask.

Abstract: A micro electrical mechanical system (MEMS) pressure sensor includes a base structure defining an opening, a plurality of support members coupled to the base structure, a thin-film diaphragm supported by the support members, and at least one strain-sensitive member associated with the at least one support member.

Abstract: A pressure sensor includes: an airtight case equipped with first and second pressure input orifices provided respectively on opposing first and second wall surfaces; a cylindrical first bellows fixed on the first wall surface at one end and equipped with a shaft hole communicating with the first pressure input orifice; a cylindrical second bellows fixed on the second wall surface at one end; equipped with a shaft hole communicating with the second pressure input orifice and arranged in series with the first bellows; a resonator-adhering pedestal arranged and fixed between other ends of the first and second bellows; a lamellar piezoelectric resonator supported by the resonator-adhering pedestal, and an oscillation circuit electrically connected to an electrode pattern of the piezoelectric resonator.

Abstract: A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezoresistors coupled in a Wheatstone bridge configuration and being suitable for providing a second output being indicative of an absolute line pressure. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output.

Abstract: A method and system of providing power to a pressure and temperature sensing element is provided. Polarity switching is added to a current source for a sensor, which includes one piezo-resistive sensing element configured as a single implant square located at an edge of a diaphragm of the element, and which produces pressure and temperature outputs. The piezo-sensing element operates as a piezo-resistive radial element when current is conducted through the element radially with respect to the diaphragm. Conversely, the piezo-sensing element operates as a piezo-resistive tangential element when current is conducted through the element tangentially to the edge of the diaphragm. A difference in the radial and tangential resistances is proportional to an applied pressure, while a sum of the resistances is a function of temperature. By alternating the polarity of power applied to the sensor, a build up of ions resulting from PUD is minimized.

Abstract: A pressure and sensing element is provided that includes one piezo-resistive sensing element configured as a single light implant square, and may produce outputs relating to both a pressure and temperature that has been sensed. The piezo-sensing element may operate as a piezo-resistive radial element when a constant current is conducted through the element in the radial direction with respect to the diaphragm. Conversely, the piezo-sensing element may operate as a piezo-resistive tangential element when a constant current is conducted through the element in the tangential direction to the edge of the diaphragm. A difference in the radial and tangential resistances and a corresponding difference in voltage drop are proportional to an applied pressure, while a sum of the same two resistances is a function of temperature.

Abstract: A pressure sensing apparatus including a thin disc of a metal having a ceramic material layer and piezoresistive elements formed thereon. A surface of the disc is bonded to a diaphragm assembly on a pressure port base constructed of a low cost metal. The bonding process is performed at low temperatures, (<700° C.), so that the diaphragm assembly and pressure port do not require high temperature corrosion resistance, and can thus be formed of less expensive materials. The inventive apparatus provides a lower cost alternative to conventional high pressure sensors since less material is used, less expensive materials are used, and fabrication is less complex. The inventive apparatus is also more reliable and exhibits greater thermal stability than conventional high pressure sensors.

Abstract: A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

Abstract: A micromechanical piezoresistive pressure sensor device having a sensor substrate, in which an essentially rectangular diaphragm region is provided; a piezoresistive resistance device having at least one piezoresistive resistor strip, which runs parallel to the longitudinal edges of the diaphragm device across the entire length of the diaphragm device and onto the surrounding sensor substrate; the piezoresistive resistor strip having a narrow center region and widened end regions and the widened end regions running across the short edges of the diaphragm device.

Abstract: A tire condition detecting system has transmitters and a receiver. The transmitter is installed in a plurality of wheels and the receiver is installed in a chassis of a vehicle. The receiver has a controller which determines transmission timings in which a transmitting/receiving unit transmits the electrical wave for electrical charging to the transmitters. Moreover the controller detects an electrical wave from a nearby vehicle at the transmission timing. If the detected wave from the nearby vehicle is stronger, the controller waits for a predetermined period before making the transmitting/receiving unit transmit the electrical wave.

Abstract: An absolute or relative pressure sensor formed of a monolithic plastic body (2) includes a carrier body (3) and a membrane (4). A printed circuit including wire strain gauges and comprised of a polymer paste is disposed on the membrane (4). The membrane (4) is shaped so as to be very soft affording high pressure sensitivity, while the circuit includes electric terminals (7) which may be embedded in the monolithic body (2) during manufacture to eliminate subsequent mounting of these terminals in simplifying production and reducing cost. By connecting the membrane (4) to an element embedded in the monolithic body (2), membrane elasticity may be adjusted to provide the pressure sensor with a desired sensitivity for a specific application. The embedded element is preferably formed as a core of the membrane which is completely surrounded by the plastic monolithic body (2) using a vacuum container (8).

Abstract: In a piezo resistance type semiconductor device, a detecting sensitivity and output linearity are improved without increasing a forming region of a diaphragm. In a piezo resistance type semiconductor device having: a diaphragm; a supporting frame which is connected to an external periphery of the diaphragm, supports the diaphragm, and is formed relatively thicker than the diaphragm; and piezo resistance type stress detectors (4a, 4b) each for detecting a stress caused when the detector is distorted by deformation of the diaphragm by application of an acceleration or a pressure in the direction perpendicular to the diaphragm, at least a part of the diaphragm is cut off in a position where it is come into contact with the piezo resistance type stress detector and a groove is formed.

Abstract: A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.

Abstract: A pressure sensor comprises a housing having a pressure introduction hole, a pressure detecting element formed of a semiconductor device having the piezoelectric resistance effect, a holder for fixing the pressure detecting element, and a connector case. The pressure detecting element and the holder are airtightly joined to form a pressure sensor body in which an interior space is defined. A circuit board having an electrode pad is provided on the holder of the pressure sensor body, and a connector in the connector case and the electrode pad are connected by means of an electrically conductive spring body having elasticity. The holder is supported in the housing by means of a guide frame and an O-ring.

Abstract: A method and media-isolated absolute pressure sensor apparatus includes a first sensor (101) to measure a pressure difference between an isolated media (P1) and a second media (Pa). A second sensor (103) measures an absolute (relative to vacuum) pressure of the second media (Pa). Each sensor (101, 103) has its own offset and slope response. An equalizer (217, 219) matches the slopes of the sensors (101, 103), wherein a summing circuit (225) can add the substantially same slope outputs to provide an output signal (227) indicative of an absolute pressure measurement of the isolated media (P1). Offset and temperature compensation of each sensor can also be provided.

Abstract: A pressure sensor (3) is firmly connected to a base plate (1). The base plate (1) can be mounted, together with the pressure sensor (3), on a counterplate (7). The counterplate (7) has a drilled hole (8) through which pressure can be applied to the pressure sensor (3). The pressure sensor (3) has a connecting element (6) which projects, in the mounted state, into the drilled hole (8) in the counterplate (7).

Abstract: The differential pressure sensor is formed of a semiconductor substrate (1) which is thinned out in an inner region into a membrane (2) which may be impinged by pressure on both sides. Measurement resistances (3a to 3d) for detecting the differential pressure (P1 minus P2) are formed within the membrane (2), and compensation resistances (4) are formed on the carrier, which are connected to measurement resistances (3). The measurement resistances (3) are connected into a first measurement bridge (6) and the compensation resistances (4a to 4d) into a second measurement bridge (7).

Abstract: The invention relates to a pressure sensor comprising a sensor element (2) having a flat membrane (4) which is transformed at its edge into a hollow-cylindrical ring (6) so that a central recess (20) is provided at the lower side (10) of the membrane (4). On the upper side (8) of the membrane (4) a resistance arrangement consisting of electric resistors is disposed. A sleeve (54) projects into the recess (20) and supports a first elastomeric sealing ring (66) which is tightly arranged at the circumferential area of the recess (20). Furthermore the sleeve (54) supports a second elastomeric sealing ring (68) which serves for sealing at a feeding tube for pressure fluid formed in a component part to which the pressure sensor is mountable. The sleeve (54) is rigidly connected to a disk (56) which is attached with its outer edge (58) to a casing (26) enclosing the sensor element (2).

Abstract: In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an “ideal” etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness. The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm.

Abstract: A single chip multiple range pressure transducer device including a wafer having a plurality of simultaneously formed thinned regions. The thinned regions are separated by a fixed portion, and each have a same minimum thickness. The thinned regions have at least one different planar dimension. A plurality of piezoresistive circuits are formed on the wafer. Each of the circuits is associated with and at least partially formed above one of the thinned regions. The thinned regions deflect a different amount upon application of a common pressure thereto, whereby, when excited each of the circuits provides an output indicative the common pressure over a different operating range when the associated thinned region deflects.

Abstract: Transfer fluid, in particular for electrical pressure transducers and pressure transmitters, that transfers deflections of a separating element between a substance to be measured and the transfer fluid to a pressure measurement arrangement, the transfer fluid comprising a polyalphaolefin (PAO 6).

Abstract: A thin pressure sensor includes: a pair of external electrodes, which are respectively made of conductive thin films that are respectively provided with piezoelectric layers on inner sides; and a single internal electrode, made of a conductive thin film, which is sealed between the pair of external electrodes, one of the pair of external electrodes having a conducting window that conducts to said internal electrode. The thin pressure sensor has a simple and thin structure with sufficient durability and mechanical strength.

Abstract: Piezoelectric transducer assemblies that are useful for the monitoring of the gas output from a gas driven pump, wherein the assembly is not an integral part of the input or output flow stream of the material being pumped, but is used to monitor the exhaust gas flow of the gas driven pump.

Abstract: A pressure sensor (3) is firmly connected to a base plate (1). The base plate (1) can be mounted, together with the pressure sensor (3), on a counterplate (7). The counterplate (7) has a drilled hole (8) through which pressure can be applied to the pressure sensor (3). The pressure sensor (3) has a connecting element (6) which projects, in the mounted state, into the drilled hole (8) in the counterplate (7).

Abstract: A reciprocating pump which is capable of detecting abnormalities in the sucking and discharging of fluid, such as the exhaustion of oil or the clogging of oil on the discharge side, by making use of detecting means which is inexpensive and relatively simple in structure and which can be operated without being detrimentally influenced by the bubbles that may be included in the fluid, while making it possible to minimize the noise generated by external vibrations. In this reciprocating pump, where the sucking and discharging of fluid are effected by making use of a reciprocating member, malfunction-detecting means formed of a piezoelectric element is provided for detecting a pressure fluctuation on a discharge side of the pump, and the pressure fluctuation of fluid being delivered from an discharging port is transmitted via a rigid pressure-receiving member to the piezoelectric element.

Abstract: The full bridge circuit in a pressure sensor including semiconductor piezoelectric resistive elements in a pressure detection structure is connected to a filter. That is, first and second output terminals of the full bridge circuit is connected to a capacitor. One end of the capacitor is connected to the first output terminal through a first resistor. The other end of the capacitor is connected to the second output terminal through a second resistor. In an exhaust system of an engine, the pressure of the exhaust gas is detected to detect clogging in the black smoke removing unit. The filter removes the pulsate component in the detection signal derived from the pulsate component in the exhaust gas.

Abstract: A pressure sensing device for measuring the pressure of a fluid, comprising: a measurement diaphragm which is at least partially made of semiconductor material, is provided with a first surface and a second surface which are exposed respectively to a first pressure and to a second pressure, and undergoes a deformation following the application of the first pressure and of the second pressure; and a resonant element made of semiconductor material which is provided with a first end portion and with a second end portion for mechanically coupling the resonant element to the measurement diaphragm, the oscillation frequency of the resonant element varying according to the deformation to which the measurement diaphragm is subjected; and first circuit means for generating a sensing signal which is indicative of the oscillation frequency of the resonant element.

Abstract: A pressure cell contains a base body (1), a membrane (2) that is arranged on the base body (1) and can be deformed by a pressure to be measured, as well as a first and a second temperature sensor. The second temperature sensor is spaced apart from the first temperature sensor in the direction of a temperature gradient. Temperature shocks of the measuring cell can be determined and compensated by monitoring the difference between the temperatures measured by the sensors or changes in the temperatures measured by a sensor.

Abstract: An acoustic system has an acoustic sensor and a processing circuit. The acoustic sensor includes a base, a microphone having a microphone diaphragm supported by the base, and a hot-wire anemometer having a set of hot-wire extending members supported by the base. The set of hot-wire extending members defines a plane which is substantially parallel to the microphone diaphragm. The processing circuit receives a sound and wind pressure signal from the microphone and a wind velocity signal from the hot-wire anemometer, and provides an output signal based on the sound and wind pressure signal from the microphone and the wind velocity signal from the hot-wire anemometer (e.g., accurate sound with wind noise removed). The configuration of the hot-wire extending members defining a plane which is substantially parallel to the microphone diaphragm can be easily implemented in a MEMS device making the configuration suitable for miniaturized applications.

Abstract: In an integrated pressure sensor including a semiconductor substrate having a p type single crystal silicon substrate and an n type epitaxial layer of which a portion is etched by electrochemical etching to have a diaphragm, an impurity diffusion layer piercing the n type epitaxial layer at least defining the diaphragm is formed for isolation. An etching wire is formed on the surface of the n type epitaxial layer with insulation and the first end of the etching wire extends to the inside of the surface and is connected to the n type epitaxial layer. The second opposite end extends to an edge of the semiconductor substrate. The etching wire does not cross the impurity layer inside the surface of the semiconductor substrate to prevent the etching wire from short-circuiting with the impurity diffusion layer during the electrochemical etching.

Abstract: A pressure sensor device is described that has a diaphragm acted upon by a working medium, on a first side, and a sensor chip, which is disposed on a second side of the diaphragm that is remote from the working medium. There is formed in the sensor chip a measuring bridge having four sensor elements, which form two pairs disposed parallel, and the pairs are disposed at right angles to one another. The sensor elements are disposed such that they are closely spaced apart from one another in the edge region of the sensor chip that faces toward the central point of the diaphragm.

Abstract: Tilt and vibration sensor and method for forming the sensor with a piezoresistive membrane having a weight affixed proximate its center for detecting the tilt and vibration of a body. The membrane may include four piezoresistors placed proximate the edges of the membrane at the points of maximum stress when the membrane is subject to a uniform applied pressure. The piezoresistors may form a Wheatstone bridge circuit to generate a first and second output voltage in response to changes in resistance of the piezoresistors under the uniform applied pressure. The first output voltage may be indicative of the angle of inclination of a body and the second output voltage may be indicative of the vibration of the body. The membrane may be fabricated from a silicon wafer using known photolithography and etching processes. The membrane may be connected with a voltage source and secured within an appropriate housing to be placed in an operational environment.

Abstract: A differential pressure sensor has a first and a second measuring chamber. Each measuring chamber is limited by a rigid carrier plate and a diaphragm plate, which is formed in the region of the measuring chamber as a pressure-sensitive measuring diaphragm. To design the differential pressure sensor to be resistant to overloading, the carrier plate is arranged between a first and a second diaphragm plate and has congruent concave depressions on opposite sides in the plane of the plate. The depressions are connected to one another by a central duct, penetrating the carrier plate perpendicularly to the plane of the plates. In the region of the measuring chambers, the diaphragm plates are formed congruently in relation to the depressions as pressure-sensitive measuring diaphragms. The measuring chambers are coupled to one another by a ram guided axially movably in the duct.

Abstract: An apparatus for monitoring fluid pressure includes a reusable base section, and a disposable dome section detachably connected to the base section. The disposable dome section defines a fluid pathway and includes a dome viewing segment in fluid communication with a flush segment and a stopcock segment. A pressure transducer sensor is disposed in the reusable base section and is adapted to produce electrical signals proportional to fluid pressures sensed in the fluid pathway. A usage indicator can be disposed in the base section to provide a visual indication of usage of the apparatus within a predetermined number of uses. A calibration port can be provided in the base section to allow for simple calibration by the user without violating the sterility of the apparatus. The ability to reuse the base section with the sensor component reduces the cost of the apparatus, while the disposability of the dome section with the fluid pathway ensures sterility for each use.

Abstract: A sensor unit S for water heating systems, particularly for water boilers, is designed with a single housing H as a combined relative pressure and temperature sensor and has a ceramic support element C carrying an electronic circuit E including separate circuit zones E1, E2 for detecting the pressure and the temperature of the water, the support element including an active functional element M and being directly contacted by the water. The water contact area of said ceramic support element is separated from the electronic circuit E by a seal in the housing H.

Abstract: A differential pressure sensor has a first and a second measuring chamber. Each measuring chamber is limited by a rigid carrier plate and a diaphragm plate, which is formed in the region of the measuring chamber as a pressure-sensitive measuring diaphragm. To design the differential pressure sensor to be resistant to overloading, the carrier plate is arranged between a first and a second diaphragm plate and has congruent concave depressions on opposite sides in the plane of the plate. The depressions are connected to one another by a decentered duct, penetrating the carrier plate perpendicularly to the plane of the plates. In the region of the measuring chambers, the diaphragm plates are formed congruently in relation to the depressions as pressure-sensitive measuring diaphragms. The measuring chambers and the duct are filled with an incompressible fluid.

Abstract: A leadless sensor of the type employing a p+ rim which surrounds contact areas, each contact area defined by a metallized portion surrounded by a p+ semiconductor material, which p+ semiconductor materials or fingers are coupled to an active sensor array. The leadless sensor is bonded to a first glass cover member having two slotted apertures which communicate with the active regions of the sensor area on the underside and a top glass contact member which has two slotted regions which communicate with the piezoresistive sensors on the top side of the semiconductor wafer. The glass contact member has a series of corner through holes which are congruent with the contact terminals associated with the semiconductor sensor and which through holes are filled with a glass metal frit to enable contact to be made to the contact terminals of the semiconductor sensor.

Abstract: An oil filled pressure transducer utilizes a leadless sensor which is secured to a header comprising a glass pre-form and a header shell. The glass pre-form contains holes which accept header pins and another aperture or hole which accepts the oil fill tube. The diameter of the sensor is chosen to be almost as large as the inner diameter of the shell. In this manner, there is a small cut out over the portion of the sensor that would otherwise cover the oil fill tube. The sensor is mounted to the header using glass bonds. There is a very small space between the outer diameter of the sensor and the inner diameter header housing, which is filled with glass used to mount the sensor. Since there are no ball bonds or gold wires in the area between the surface of the sensor and the diaphragm, the distance between the sensor and metal diaphragm is drastically reduced, thereby substantially reducing the backpressure problem.

Abstract: A pressure sensor has a joint (1) having a pressure port (13), a pressure detecting device (2) bonded to the joint (1) to convert fluid pressure to an electric signal and a housing (5) provided to an output side of the pressure detecting device (2), the pressure sensor further including a flange member (3) bonded to the joint (1) and having a through-hole (26) for the pressure detecting device (2) to be inserted and a connector (6) bonded to the flange member (3) to fix the housing (5).

Abstract: A process for the production of a device for measuring or detecting, particularly a probe or a detector, includes the steps of pre-mounting the different active components of the device, of which certain are ultimately gathered in functional subassemblies on and/or in a support body, then potting the pre-mounted resulting assembly, as well as its connection regions with a connection and/or supply cable, to form a substantially monoblock member and, finally, overmolding under pressure the potted member, as well as the proximal portion of the cable, with a thermoplastic material compatible with the resin used, to obtain an apparatus or instrument having the desired shape.