Abstract: A pressure sensor including a pressure-sensor element having a monolithic body of semiconductor material, and a first main face and a second main face acting on which is a stress resulting from a pressure, the value of which is to be determined; and a package enclosing the pressure-sensor element. The package has an inner chamber containing liquid material, and the pressure-sensor element is arranged within the inner chamber in such a manner that the first and second main faces are both in contact with the liquid material. In particular, the liquid material is a silicone gel.

Abstract: In an integrated pressure sensor with a high full-scale value, a monolithic body of semiconductor material has a first and a second main surface, opposite and separated by a substantially uniform distance. The monolithic body has a bulk region, having a sensitive portion next to the first main surface, upon which pressure acts. A first piezoresistive detection element is integrated in the sensitive portion and has a variable resistance as a function of the pressure. The bulk region is a solid and compact region and has a thickness substantially equal to the distance.

Abstract: The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

Abstract: A piezoresistive pressure sensor test sample is first provided, and a zero offset of the piezoresistive pressure sensor test sample is measured. Subsequently, a stress deviation corresponding to the zero offset is calculated. Thereafter, at least a piezoresistive pressure sensor under the same process condition as the piezoresistive pressure sensor test sample is formed. When forming the piezoresistive pressure sensor, at least a stress-adjusting thin film is formed on at least a surface of the piezoresistive pressure sensor to calibrate the zero offset of the piezoresistive pressure sensor.

Abstract: The flow meter probe with force sensors has the body of a frustum of a regular pyramid with a force sensor disposed upon each face. The force sensors are mounted in bores defined in the probe body and include a pin that may be displaced in the bore to exert pressure on an electrical transducer. The transducer may be a ceramic, piezoelectric sensor or a Micro-Electro-Mechanical System (MEMS) sensor. The pin has an aerodynamically- or hydrodynamically-shaped head, a cylindrical body, and a frustoconical tail to concentrate force exerted upon the sensor. The head of the pin protrudes slightly above the face of the probe body so that aerodynamic and hydrodynamic forces are exerted directly against the pin, and pin displacement measures the forces directly. A plurality of probes may be placed in the path of fluid flow in a variety of configurations, as desired.

Abstract: A MEMS based pressure sensor for flow measurements includes a pressure sense die located between a media seal and a conductive seal. Such a system includes a pressure sense die located between a media seal and a conductive seal. A sensing diaphragm is generally associated with the pressure sense die, wherein the sensing diaphragm deflects when a pressure is applied thereto. An impedance circuit is generally embedded with one or more resistors on the sensing diaphragm to which the pressure to be detected is applied. An ASIC is generally associated with the impedance circuit and the sense die, wherein the ASIC is placed on a lead frame for signal conditioning in order to detect a change in the pressure.

Abstract: A fluid sensor is provided for determining a fluid characteristic, having an electronic sensor element that has an active surface for determining the fluid characteristic, having a mounting plate associated with the sensor element, and having a filter device associated with the sensor element for filtering the fluid, in which the active surface of the sensor element is oriented toward the mounting plate and in which the mounting plate is provided with an opening opposite from the active surface of the sensor element. According to an embodiment the invention, an end region of the filter device is accommodated in a sealed fashion in the opening of the mounting plate. Furthermore, the fluid sensor can be used for tire pressure measurement.

Abstract: A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezoresistors coupled in a Wheatstone bridge configuration and being suitable for providing a second output being indicative of an absolute line pressure. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output.

Abstract: A method for measuring average velocity pressure of a stack comprises the following steps. First, a total pressure measuring device is provided. The total pressure measuring device then measures the total pressure at a first location in the stack. Next, physical parameters comprising a distance between the first location and an outlet of the stack, a diameter and shape thereof are obtained. A formula of a static pressure and the average velocity pressure between the outlet and the first location is obtained by comparing the physical parameters to known fluid mechanics data. Finally, the average velocity pressure is obtained from the formula and the total pressure.

Abstract: A sensor and insertion assembly 2 is used for intravascular measurement of pressure in a living body. The assembly includes, a sensor chip 6 having a substrate body 8 with a recess covered by a pressure sensitive film 10 thereby forming a cavity 12. A piezoelectric element, preferably in the form of a piezoelectric film 14, is arranged in connection with the pressure sensitive film, and energy is applied to the piezoelectric element such that acoustic waves are generated in the element. The piezoelectric element is arranged to generate an output signal, representing the pressure at the film, in dependence on the measured properties of the acoustic waves related to the deflection of the pressure sensitive film.

Abstract: A pressure transducer includes a diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.

Abstract: A pressure sensor for detecting a pressure and for outputting a signal based on the piezoresistance effect includes a substrate having a sensor chip on one side in a thin portion and a concave portion on another side, a piezo-resistor in the sensor chip, a pedestal being attached to the substrate and having a through hole for introducing the pressure to the sensor chip and a gel material filled in the concave portion and the through hole for protecting the sensor chip. A ratio of a diameter of the through hole to a thickness of the pedestal is substantially within a range between 1 and 3.

Abstract: A method and system of providing power to a pressure and temperature sensing element is provided. Polarity switching is added to a current source for a sensor, which includes one piezo-resistive sensing element configured as a single implant square located at an edge of a diaphragm of the element, and which produces pressure and temperature outputs. The piezo-sensing element operates as a piezo-resistive radial element when current is conducted through the element radially with respect to the diaphragm. Conversely, the piezo-sensing element operates as a piezo-resistive tangential element when current is conducted through the element tangentially to the edge of the diaphragm. A difference in the radial and tangential resistances is proportional to an applied pressure, while a sum of the resistances is a function of temperature. By alternating the polarity of power applied to the sensor, a build up of ions resulting from PUD is minimized.

Abstract: A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezoresistors coupled in a Wheatstone bridge configuration and being suitable for providing a second output being indicative of an absolute line pressure. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output.

Abstract: A pressure and sensing element is provided that includes one piezo-resistive sensing element configured as a single light implant square, and may produce outputs relating to both a pressure and temperature that has been sensed. The piezo-sensing element may operate as a piezo-resistive radial element when a constant current is conducted through the element in the radial direction with respect to the diaphragm. Conversely, the piezo-sensing element may operate as a piezo-resistive tangential element when a constant current is conducted through the element in the tangential direction to the edge of the diaphragm. A difference in the radial and tangential resistances and a corresponding difference in voltage drop are proportional to an applied pressure, while a sum of the same two resistances is a function of temperature.

Abstract: A pressure sensing apparatus including a thin disc of a metal having a ceramic material layer and piezoresistive elements formed thereon. A surface of the disc is bonded to a diaphragm assembly on a pressure port base constructed of a low cost metal. The bonding process is performed at low temperatures, (<700° C.), so that the diaphragm assembly and pressure port do not require high temperature corrosion resistance, and can thus be formed of less expensive materials. The inventive apparatus provides a lower cost alternative to conventional high pressure sensors since less material is used, less expensive materials are used, and fabrication is less complex. The inventive apparatus is also more reliable and exhibits greater thermal stability than conventional high pressure sensors.

Abstract: A micromechanical piezoresistive pressure sensor device having a sensor substrate, in which an essentially rectangular diaphragm region is provided; a piezoresistive resistance device having at least one piezoresistive resistor strip, which runs parallel to the longitudinal edges of the diaphragm device across the entire length of the diaphragm device and onto the surrounding sensor substrate; the piezoresistive resistor strip having a narrow center region and widened end regions and the widened end regions running across the short edges of the diaphragm device.

Abstract: A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

Abstract: In a piezo resistance type semiconductor device, a detecting sensitivity and output linearity are improved without increasing a forming region of a diaphragm. In a piezo resistance type semiconductor device having: a diaphragm; a supporting frame which is connected to an external periphery of the diaphragm, supports the diaphragm, and is formed relatively thicker than the diaphragm; and piezo resistance type stress detectors (4a, 4b) each for detecting a stress caused when the detector is distorted by deformation of the diaphragm by application of an acceleration or a pressure in the direction perpendicular to the diaphragm, at least a part of the diaphragm is cut off in a position where it is come into contact with the piezo resistance type stress detector and a groove is formed.

Abstract: A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.

Abstract: A method of estimating the airspeed of an aircraft during low airspeed conditions includes measuring a negative impact pressure using a pitot-static probe on the aircraft. Then, the method includes estimating a non-zero airspeed of the aircraft as a function of the measured negative impact pressure.

Abstract: An electronic switch of the type uses a piezoresistive Wheatstone bridge configuration to sense pressure. The output of the Wheatstone bridge is applied to an electronic control circuit which contains a comparator. The comparator monitors the output of the bridge and if the output voltage of the bridge exceeds a predetermined value, as indicated by the comparator, a switch is closed to illuminate a lamp indicating to the operator that the pressure has been exceeded. One terminal of a resistor is connected to an output of the bridge. The other terminal of the resistor is coupled to a switch which when operated, causes the resistor to be connected in parallel with one of the arms of the bridge, thereby producing an imbalance of the bridge.

Abstract: A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.

Abstract: An electronic single pole double throw switch has two states. In each state, one of the lamps is on and the other lamp is off. In the electronic switch, the voltage, which is at the output terminal of the lamp that is off is utilized to drive a low voltage regulator which operates electronic circuitry associated with the electronic switch.

Abstract: A sensor and guide wire assembly (21; 31; 41) for intravascular measurements of physiological variables in a living body includes a core wire (22; 32; 42) and sensor element (23; 33; 43). The sensor element (23; 33; 43) includes basically a mounting base (24; 34; 44) and a pressure sensitive end portion (25; 35; 45) whose upper side is provided with a pressure sensitive device, such as a membrane (26; 36; 46). The mounting base (24; 34; 44) extends downwards from the end opposite to the pressure sensitive end (25; 35; 45), such that, when the sensor element (23; 33; 43) is mounted on the core wire (22; 32; 42), a clearance (27; 37; 47) is formed below the pressure sensitive end (25; 35; 45).

Abstract: The invention relates to a pressure sensor comprising a sensor element (2) having a flat membrane (4) which is transformed at its edge into a hollow-cylindrical ring (6) so that a central recess (20) is provided at the lower side (10) of the membrane (4). On the upper side (8) of the membrane (4) a resistance arrangement consisting of electric resistors is disposed. A sleeve (54) projects into the recess (20) and supports a first elastomeric sealing ring (66) which is tightly arranged at the circumferential area of the recess (20). Furthermore the sleeve (54) supports a second elastomeric sealing ring (68) which serves for sealing at a feeding tube for pressure fluid formed in a component part to which the pressure sensor is mountable. The sleeve (54) is rigidly connected to a disk (56) which is attached with its outer edge (58) to a casing (26) enclosing the sensor element (2).

Abstract: In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an “ideal” etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness. The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm.

Abstract: A pressure detector such as a combustion pressure sensor includes a pressure-sensitive element disposed in a cylindrical housing. Electrical signals responsive to pressure applied to the pressure-responsive element are generated in the element and led to output terminals through conductor patterns formed on the surface of a connecting member disposed between the pressure-responsive element and the output terminals. The conductor patterns may be formed in grooves formed on the surface of the connecting member. In place of the connecting member, a disc-shaped thin conductive member made of an anisotropiccally conductive material may be used.

Abstract: A sensor package is disclosed. The sensor package includes a housing that has a recess and a sealing member epoxied within the recess of the housing. The housing also has small EDM holes to allow conductive output wires to feed through the housing. The sealing member provides a seal for the holes of the conductive outputs of the sensor package. The sensor package further includes a sensing die, which detects a pressure, and outputs an electrical signal through the output wires.

Abstract: An acceleration sensor includes a deflectable pressure measuring diaphragm and a counter-structure, which is deflectable as against the pressure measuring diaphragm. The acceleration sensor includes a detection means for detecting a deflection of the pressure measuring diaphragm as against the counter-structure. Further, a test mass is connected to the pressure measuring diaphragm or the counter-structure in order to be deflected from an idle position depending on an acceleration applied. The deflection of the test mass results in a change of the distance between the pressure measuring diaphragm and the counter-structure, which is detectable by the detection means.

Abstract: An entirely surface micromachined free hanging strain-gauge pressure sensor is disclosed. The sensing element consists of a 80 &mgr;m long H-shaped double ended supported force transducing beam (16). The beam is located beneath and at one end attached to a square polysilicon diaphragm (14) and at the other end to the cavity edge. The sensor according to the invention enables a combination of high pressure sensitivity and miniature chip size as well as good environmental isolation. The pressure sensitivity for the sensor with a H-shaped force transducing beam, 0.4 &mgr;m thick was found to be 5 &mgr;V/V/mmHg.

Abstract: A surface-micromachined high-pressure sensor, formed by forming a cavity using a sacrificial layer. The sacrificial layer can be reflowed to make the edges of the cavity more rounded. The material that is used for the diaphragm can be silicon nitride, or multiple layers including silicon nitride and other materials. The pressure sensor is intended to be used in high pressure applications, e.g. pressure is higher than 6000, 10,000 or 30,000 P.S.I.

Abstract: In a pressure sensor in which a frame shaped protruding potion is formed on a surface side of a substrate by means of an etching process, and a blocking plate is connected to an upper part of the protruding portion, to form a standard pressure chamber, a recess is formed on at least one of the substrate and the blocking plate that constitute the standard pressure chamber, to increase the height of the standard pressure chamber, thereby preventing the lowering of pressure detection accuracy due to foreign substances within the standard pressure chamber.

Abstract: A pressure sensor 1′ comprising a housing 10′ having a pressure introduction hole 12, a pressure sensing element 22 composed of a semiconductor element having piezoresistance effect, a holder 30 having fixed thereto the pressure sensing element 22, a guide member 98, a seal member 99 and a connector case 70, the pressure sensor element 22 and holder 30 joined in airtight manner to create a reference pressure chamber 72. On the holder 30 of the pressure sensor body is mounted a circuit board 40 having electrode pads, the electrode pads connected to connectors 80 fixed to the connector case 70 via conductive spring bodies 50. The guide member 98 supports holder 30, and in the opening 100 of the guide member 98 is placed the seal member 99.

Abstract: A sensor (1) is provided in the region of the connecting socket (3) for the connecting cable (5) with an integrated identification unit (6) which can be electrically queried and contacted through a separate pole of the connecting cable (5), on the one hand, and through the cable shield of the connecting cable (5), on the other hand, whereby the sensitivity of the sensor (1) can be coded and queried from the outside via the connecting cable (5) by means of the identification unit (6).

Abstract: A high pressure sensor is provided with a single-piece pressure port machined from stainless steel and has no internal gaskets or seals. A housing surrounds the pressure port along a portion of its axial length. The housing and pressure port have mating configurations that prevent axial rotation when the pressure port is inserted into the assembled position in the housing. A retaining ring locks the pressure port axially with respect to the housing and is fixed in place by a fixative, such as epoxy.

Abstract: A reciprocating pump which is capable of detecting abnormalities in the sucking and discharging of fluid, such as the exhaustion of oil or the clogging of oil on the discharge side, by making use of detecting means which is inexpensive and relatively simple in structure and which can be operated without being detrimentally influenced by the bubbles that may be included in the fluid, while making it possible to minimize the noise generated by external vibrations. In this reciprocating pump, where the sucking and discharging of fluid are effected by making use of a reciprocating member, malfunction-detecting means formed of a piezoelectric element is provided for detecting a pressure fluctuation on a discharge side of the pump, and the pressure fluctuation of fluid being delivered from an discharging port is transmitted via a rigid pressure-receiving member to the piezoelectric element.

Abstract: The full bridge circuit in a pressure sensor including semiconductor piezoelectric resistive elements in a pressure detection structure is connected to a filter. That is, first and second output terminals of the full bridge circuit is connected to a capacitor. One end of the capacitor is connected to the first output terminal through a first resistor. The other end of the capacitor is connected to the second output terminal through a second resistor. In an exhaust system of an engine, the pressure of the exhaust gas is detected to detect clogging in the black smoke removing unit. The filter removes the pulsate component in the detection signal derived from the pulsate component in the exhaust gas.

Abstract: A pressure cell contains a base body (1), a membrane (2) that is arranged on the base body (1) and can be deformed by a pressure to be measured, as well as a first and a second temperature sensor. The second temperature sensor is spaced apart from the first temperature sensor in the direction of a temperature gradient. Temperature shocks of the measuring cell can be determined and compensated by monitoring the difference between the temperatures measured by the sensors or changes in the temperatures measured by a sensor.

Abstract: A semiconductor sensor chip is interposed between a sensor case and a housing. A first pressure is introduced from the sensor case and applied to a rear surface of the sensor chip, while a second pressure is introduced from the housing and applied to a front surface of the sensor chip. The sensor chip detects a pressure difference between the first and the second pressures and converts it into an electrical signal. The sensor chip is hermetically mounted in a depressed portion formed in the sensor case by charging a sealing material from holes formed around the depressed portion. The charging holes are positioned between terminals electrically connecting the sensor chip to an outside circuit to avoid enlarging the pressure sensor size by forming the charging holes.

Abstract: A differential and absolute transducer are secured to a Pyrex glass header by means of a glass metal frit or other suitable interface. One of the sensors measures absolute pressure and the sensor is a sealed cavity, while the other sensor is designed to measure differential pressure and the sensor is an aperture which permits the pressure media to reach both sides of the sensor. The header itself has a through hole connected to a tube over which the differential sensor is affixed. The Pyrex glass is chosen to match the coefficient expansion of the sensors. The header in turn is attached to an adapter that enables static pressure to be applied to both sensors simultaneously and total pressure applied to the differential sensor, thus permitting the measurement of the difference between the total pressure and the static pressure.

Abstract: In an integrated pressure sensor including a semiconductor substrate having a p type single crystal silicon substrate and an n type epitaxial layer of which a portion is etched by electrochemical etching to have a diaphragm, an impurity diffusion layer piercing the n type epitaxial layer at least defining the diaphragm is formed for isolation. An etching wire is formed on the surface of the n type epitaxial layer with insulation and the first end of the etching wire extends to the inside of the surface and is connected to the n type epitaxial layer. The second opposite end extends to an edge of the semiconductor substrate. The etching wire does not cross the impurity layer inside the surface of the semiconductor substrate to prevent the etching wire from short-circuiting with the impurity diffusion layer during the electrochemical etching.

Abstract: A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.

Abstract: An apparatus for determining hydraulic pressure within a pressure sensing fluid filter assembly includes a pressure-sensing polymer thick film transducer associated with an oil filter assembly. Preferably, pressure sensors are provided on both the oil inlet and outlet areas of the filter. The pressure-sensing transducers send signals to a control module, which may compare pressure readouts at the inlet and outlet sides of the filter. Based on the pressure in the filter, the on-board sensing system will detect a clogged filter condition, and if necessary, the control module will send a signal to an in-dash display terminal, to indicate that an oil change is needed.

Abstract: A pressure sensor device is described that has a diaphragm acted upon by a working medium, on a first side, and a sensor chip, which is disposed on a second side of the diaphragm that is remote from the working medium. There is formed in the sensor chip a measuring bridge having four sensor elements, which form two pairs disposed parallel, and the pairs are disposed at right angles to one another. The sensor elements are disposed such that they are closely spaced apart from one another in the edge region of the sensor chip that faces toward the central point of the diaphragm.

Abstract: Tilt and vibration sensor and method for forming the sensor with a piezoresistive membrane having a weight affixed proximate its center for detecting the tilt and vibration of a body. The membrane may include four piezoresistors placed proximate the edges of the membrane at the points of maximum stress when the membrane is subject to a uniform applied pressure. The piezoresistors may form a Wheatstone bridge circuit to generate a first and second output voltage in response to changes in resistance of the piezoresistors under the uniform applied pressure. The first output voltage may be indicative of the angle of inclination of a body and the second output voltage may be indicative of the vibration of the body. The membrane may be fabricated from a silicon wafer using known photolithography and etching processes. The membrane may be connected with a voltage source and secured within an appropriate housing to be placed in an operational environment.

Abstract: A sensor having freeze resistant features is disclosed. The sensor includes a sensor die and a buffer member that are assembled for attachment to a process fluid conduit. The buffer member defines an opening in fluid communication with the process fluid. The sensor die has a flexible diaphragm, and a capillary channel establishes fluid communication between the diaphragm area of the sensor die and the opening in the buffer member.

Abstract: A pressure sensor is provided, in which dead space is not formed under the diaphragm so that air or fluid will not be remained in the dead space. The pressure sensor having a passage for flowing fluid from one end to the other end thereof comprises a sensor head having a pressure sensitive area responsive to the fluid pressure and a diaphragm having a pressure receiving surface for receiving the fluid pressure directly, wherein the pressure receiving surface is disposed so as to protrude to the inside of the passage, and the pressure sensitive area is disposed on the opposite surface from the pressure receiving surface of the diaphragm.

Abstract: A sensor unit S for water heating systems, particularly for water boilers, is designed with a single housing H as a combined relative pressure and temperature sensor and has a ceramic support element C carrying an electronic circuit E including separate circuit zones E1, E2 for detecting the pressure and the temperature of the water, the support element including an active functional element M and being directly contacted by the water. The water contact area of said ceramic support element is separated from the electronic circuit E by a seal in the housing H.

Abstract: A pressure sensor (1) has a circuit board (5) having a circuit portion (11) for amplifying an electric signal detected by a pressure detecting element (2C) and attached with an IC die (16), and a terminal (12) for inputting and outputting the electric signal from the circuit portion (11). The circuit portion (11) and the terminal (12) have a frame (11A, 12D) formed by a metal plate, the metal plate being provided with resin molds (14, 15). The circuit portion (11) and the terminal (12) are continuously formed, so that steps for soldering etc. is not necessary.