Abstract: A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.

Abstract: A pressure sensor is described with sensing elements electrically and physically isolated from a pressurized medium. An absolute pressure sensor has a reference cavity, which can be at a vacuum or zero pressure, enclosing the sensing elements. The reference cavity is formed by bonding a recessed cap wafer with a gauge wafer having a micromachined diaphragm. Sensing elements are disposed on a first side of the diaphragm. The pressurized medium accesses a second side of the diaphragm opposite to the first side where the sensing elements are disposed. A spacer wafer may be used for structural support and stress relief of the gauge wafer. In one embodiment, vertical through-wafer conductive vias are used to bring out electrical connections from the sensing elements to outside the reference cavity. In an alternative embodiment, peripheral bond pads on the gauge wafer are used to bring out electrical connections from the sensing elements to outside the reference cavity.

Abstract: A semiconductor device includes a diaphragm, a sensing element, and a circuit. The sensing element is configured to sense deflection of the diaphragm. The circuit is configured to heat the diaphragm to induce deflection of the diaphragm.

Abstract: A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an Acquisition and Compensation electronics module. The individual sensor or transducer devices are semiconductor piezoresistive devices and are connected to the Acquisition and Compensation electronics module by means of a cable in a first embodiment. In an alternate embodiment the system uses connectors which connect each of the individual sensor devices to the Acquisition and Compensation electronics module via a mating connector located therein. The connectors may also include a memory which stores compensation coefficients associated with each of the various sensor devices. In this manner as described, the transducers which are small devices are connected via electrical lines or cables to the central Acquisition and Compensation electronics modules.

Abstract: A pressure sensor for sensing a pressure of a fluid includes a monolithic metal including substrate having a substantially planar top side, wherein the metallic comprising substrate includes s a relatively thick boss near a center of the substrate and a thinned sensing portion that is elastically deformable and pressure-sensitive positioned radially outward from the boss. At least one dielectric layer is on the top side of the substrate. A plurality of piezoresistors are on the dielectric layer, wherein the piezoresistors are positioned over the thinned diaphragm portion. At least one overglaze layer is over the conductor layer that provides apertures for electrically contacting the plurality of piezoresistors. A sensing system includes a housing including at least a first port for coupling to a fluid for measurement of a pressure of the fluid and at least one sensor in the housing including a pressure sensor according to an embodiment of the invention.

Abstract: It is an objective of the present invention to provide a pressure transducer assembly for measuring pressures in high temperature environments that employs an elongated tube which is terminated at one end by an acoustic micro-filter. The micro-filter has a plurality of apertures extending from one end to the other end, each aperture is of a small diameter as compared to the diameter of the transducer and the damper operates to absorb acoustic waves impinging on it with limited or no reflection. To improve the absorption of acoustic waves, the elongated tube may be tapered and/or mounted to a support block and further convoluted to reduce the overall size and mass of the device. A pressure transducer with a diaphragm flush may be mounted to the elongated tube and extend through to the inner wall of the tube. Hot gases propagate through the elongated tube and their corresponding pressures are measured by the transducer.

Abstract: An exemplary pressure cavity is disclosed that is durable, stable, and biocompatible and configured in such a way that it constitutes pico to nanoliter-scale volume. The exemplary pressure cavity is hermetically sealed from the exterior environment while maintaining the ability to communicate with other devices. Micromachined, hermetically-sealed sensors are configured to receive power and return information through direct electrical contact with external electronics. The pressure cavity and sensor components disposed therein are hermetically sealed from ambient pressure in order to reduce drift and instability within the sensor. The sensor is designed for harsh and biological environments, e.g., intracorporeal implantation and in vivo use. Additionally, novel manufacturing methods are employed to construct the sensors.

Abstract: The invention relates to a sensor unit for measuring a measurable variable, especially in an aggressive medium. Said sensor unit comprises a sensor which is disposed in a sensor casing and is provided with a sensor zone located on a base. In order to detect the measurable variable in the sensor zone, a measuring hole which allows the medium to advance directly to the sensor zone is provided in the sensor casing. A side of the sensor zone that faces away from the measuring hole is equipped with a measuring surface which encompasses measuring electronics. An electrical feeder is provided on the sensor in order to transmit a sensor signal generated by the measuring electronics. The sensor is sealingly arranged on a sealing surface located on the sensor casing in such a way that the measuring surface is isolated from the medium. A mechanism is provided by means of a which the sensor can be disconnected from thermally and/or mechanically induced changes in the sensor casing.

Abstract: A pressure/vacuum sensor and method, comprising: driving a MEMS piezoresistive resonator (8) into resonant vibration, applying Joule heating to the resonator (8); and sensing a variable parameter that varies in response to the tendency of the resonant frequency (fo) to depend upon the temperature of the resonator (8), the temperature thereof depending upon the pressure. The variable parameter may be the resonant frequency of the resonator (8), or a change therein, or may be derived from a feedback loop, being for example a time integrated feedback signal (82) or a reading (94) of the sense current (22), the loop keeping the resonant frequency constant in opposition to the above mentioned tendency. A reference MEMS capacitive resonator (62) may be located in the vicinity of the resonator (8) for compensating purposes.

Abstract: A novel flexible transducer structure is suitable for attaching to curved surface such as the leading edge of an aircraft wing. The structure comprises a thin flexible sheet of an insulating material with a leadless transducer secured to the sheet. The sheet is then placed over the curved surface and assumes the curvature of the surface. The transducer secured to the sheet provides an output of pressure according the pressure exerted on the sheet. The sheet basically is fabricated from a thin material such as Kapton and is flexible so as to assume the curvature of the surface with the transducer being exposed to pressure applied to the curved surface. The sensor in conjunction with the flexible sheet allows pressure to be measured without disturbing the air flow patterns of the measuring surfaces and because of its construction, is moisture resistant over a large variety of atmospheric conditions.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI technology. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI technology and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts.

Abstract: An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Abstract: A pressure sensor adapted to provide a high resolution at a low pressure and a high pressure of an operating range is provided. The pressure sensor includes a body having an interface sur ace, a membrane sealingly disposed in the cavity adjacent the interface surface, and a sensing element in communication with the membrane. A fuel cell system including the pressure sensor is also provided.

Abstract: A pressure transducer, particularly adapted to measure the pressure in a tire and to enable the tire to be filled includes a first housing, having an internal hollow. Positioned in the hollow of the first housing is a second housing, also having an internal hollow. The second housing is supported within the first housing so that a passageway for airflow exists between the housings. The second housing has a pressure port for monitoring the pressure of a tire. The first housing has an inlet port for receiving a source of pressure. The inlet port contains a valve which is selectively operated. The valve, when operated, permits air to flow into the hollow of the first housing and to flow about the periphery of the second housing to enter the pressure port associated with the second housing. The pressure port may, as indicated, be associated with a tire and the second housing contains a pressure sensing device which monitors the pressure in the tire via the pressure port.

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract: A sensor element having a sensitive sensor portion on an upper side of a substrate layer. The upper side of the substrate layer is provided with a recess on the periphery of the sensitive sensor portion. The recess provides mechanical isolation or decoupling of the sensitive sensor portion, as a result of which external forces do not cause stress in the sensitive sensor portion. In addition, a sensor assembly is described which is provided with at least one sensor element and a casing.

Abstract: A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Abstract: A fluid dynamic polymer-based contact sensor measures ambient pressure based on the resistivity changes across the sensor under different ambient pressures. The pressure sensor may applied to airfoil structures such as wind turbine blades without impacting the blade structure and fluid dynamic characteristics. The sensor may also be applied to fluid measurements. The pressure measurements are used to measure blade performance with high fidelity. The pressure measurements are transmitted to processing to determine blade characteristics and environment including flow separation, stagnation point, angle of attack, lift and drag and wind speed. Further processing of the pressure distribution may identify wind shear, up-flow and yaw error.

Abstract: A method for attaching a proximity probe offset to an axis defining an extension cable. The method includes a sensing element; a cylindrical part molded with a moldable material; a recess configured in one of two opposing ends defining the cylindrical part to receive the sensing element; a first and a second ferrule each extending from opposing surfaces defining an exterior of the cylindrical part, a first axis defining the first and second ferrules being offset from a second axis defining the cylindrical part; and an extension cable operably attached to the sensing element via the first and second ferrules, the sensing element being disposed offset relative to the extension cable.

Abstract: A pressure sensing apparatus (1) includes an elastically deformable pressure-sensitive diaphragm assembly (13) having a pressure-sensitive metal or metal alloy diaphragm (14). A functional filled dielectric layer (25) is on the diaphragm and includes a base dielectric material and at least one CTE raising filler. A CTE of the functional filled dielectric layer provides a CTE @ 800° C.?8 ppm/° C., such as ?10 ppm/° C. A plurality of piezoresistive elements (27) are on the functional filled dielectric layer (25).

Abstract: A pressure sensing device package including a circuit substrate, a pressure sensing device, a molding compound, and a flexible protection layer is provided. The circuit substrate has an opening. The pressure sensing device is flip chip bonded to the circuit substrate and has a sensing region facing toward the opening. The molding compound encapsulates the pressure sensing device but exposes the sensing region. The flexible protection layer is disposed on the sensing region and exposed by the opening of the circuit substrate.

Abstract: A pressure sensor module of the invention includes a pressure sensor and a laminar substrate. Electrodes are arranged in the vicinity of a diaphragm portion of the pressure sensor. In the laminar substrate, a plurality of substrates are laminated, and the laminar substrate incorporates the pressure sensor. One face of the diaphragm portion is exposed by a space portion. According to the invention, it is possible to provide a pressure sensor module which facilitates smaller and thinner sizes, and which enables high-density packaging.

Abstract: A pressure sensor includes at least one cantilever formed on an upper surface of a silicon substrate, a piezoresistor formed on a fixed end of the cantilever, and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever.

Abstract: In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.

Abstract: A pressure sensor includes a housing portion with a fluid inlet and a polymer element within the housing portion. The polymer element may be coated with piezoresistive material to form a first resistor and may have associated electrodes. The polymer element includes a first resistance value that changes to a second resistive value in a response to a predetermined condition. The pressure sensor may also include a second polymer element that includes a first resistance value that changes to a second resistive value in a response to a predetermined condition.

Abstract: The invention is a compact sensing device that is capable of measuring the conditions (e,g, pressure, temperature) inside a cylinder of an internal combustion engine. The invention is also a cost-effective method of fabricating the sensing device. The sensing device includes a substrate, a beam, and piezo-resistive sensing elements. The beam, which is formed on the substrate, is capable of deflecting according to different pressures applied to different beam surfaces. The piezo-resistive sensing elements are coupled to the beam and detect beam deflection. The piezo-resistive sensing elements generate an electrical signal corresponding to the beam deflection.

Abstract: A pressure transducer is provided that has a transducer body with a rim, a diaphragm that deflects in response to pressure and a sensor bonded to the diaphragm at the rim and at a center of the diaphragm. The sensor detects deflection of the metal diaphragm. The sensor and diaphragm are made of different materials. A thermal expansion difference between the sensor and the diaphragm is accommodated by flexures in the sensor that accept relative motion in a radial direction of the metal diaphragm with little effect on a sensitivity of the silicon structure to motion in an axial direction of the diaphragm.

Abstract: A pressure transducer for measuring pressures in high temperature environments employs a tube which is terminated at one end by an acoustic micro-filter. The acoustic filter or micro-filter has a plurality of apertures extending from one end to the other end, each aperture is of a small diameter as compared to the diameter of the transducer and the damper operates to absorb acoustic waves impinging on it with limited or no reflection. Mounted to the tube is a pressure transducer with a diaphragm flush with the inner wall of the tube. The tube is mounted in an aperture in a casing of a gas turbine operating at a high temperature. The hot gases propagate through the tube where the pressure of the gases are measured by the transducer coupled to the tube and where the acoustic filter operates to absorb acoustic waves impinging on it with little or no reflection, therefore enabling the pressure transducer to be mainly responsive to high frequency waves associated with the gas turbine operation.

Abstract: It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5<Leff/L<1, where L is the overall length and Leff is the length from the inside to edge of the diaphragm 3.

Abstract: A pressure sensor is provided. The pressure sensor includes a sensing element, a case, a line element, an insect entering restriction element. The case has a space for receiving the sensing element. The case includes a pressure introduction passage, which is in communication with the space to introduce a pressure medium into the sensing element. The line element has a first portion electrically connected with the sensing element and a second portion to be electrically connected to an external element. The insect entering restriction element extends across a path on the exterior surface of the case, the path interconnecting between the second portion of the line element and the open end of pressure introduction passage.

Abstract: A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge.

Abstract: A micromechanical sensor element (1) is provided, which has a sealed diaphragm (2) affixed in a frame (3), exhibits high sensitivity at high overload resistance and has a small size, and which allows a piezoresistive measured-value acquisition. To this end, at least one carrier element (4), which is connected to the frame (3) via at least one connection link (5), is formed in the region of the diaphragm (2). Furthermore, piezoresistors (6) for detecting a deformation are situated in the region of the connection link (5).

Abstract: An intravascular pressure sensor assembly is disclosed herein that is produced in part using photolithography and DRIE solid-state device production processes. Using DRIE production processes facilitates a number of features that could not be readily incorporated in sensor chips fabricated using mechanical saws. In accordance with a first feature, sensor chips are created with non-rectangular outlines. The sensor chip includes a widened portion that substantially abuts an inner wall of a sensor housing, and a cantilevered portion that is relatively narrow in relation to the widened portion. The non-rectangular outline of the sensor chip is formed using photolithography in combination with DRIE processing. In accordance with another feature, the sensor chip is positioned width-wise in the housing, thereby reducing a required length for the housing.

Abstract: A pressure-difference pickup includes a hydraulic body, in which an overload chamber, with an overload membrane, or diaphragm, is formed, which divides the overload chamber into a first half-chamber and a second half-chamber, wherein the first half-chamber is in communication with a first hydraulic measuring path extending between a first pressure intermediary and a first side of a pressure-difference measuring cell, and the second half-chamber is in communication with a second hydraulic path extending between a second pressure intermediary and a second side of the pressure measuring cell. Additionally, between at least the first half-chamber and the first hydraulic measuring path, there are arranged, on the one hand, a first hydraulic overload element having a snap-disc behavior relative to an excess pressure from the first hydraulic measuring path, and, on the other hand, a first hydraulic balancing path extending parallel to the first hydraulic measuring path.

Abstract: Various embodiments and methods relating to a pressure sensor having a flexure supported piezo resistive sensing element are disclosed

Abstract: A pressure sensor includes at least one cantilever formed on an upper surface of a silicon substrate, a piezoresistor formed on a fixed end of the cantilever, and a metal wire and an electrode pad connected to both ends of the piezoresistor, wherein a stopper that limits a deformation of a free end of the cantilever is formed below the cantilever.

Abstract: A high pressure transducer has an H shaped cross-section with a center arm of the H having a top and bottom surface with the top surface of the H accommodating four strain gauges. Two strain gauges are located at the center of the top portion of the center arm of the H and are positive strain gauges, while two strain gauges are located near the periphery of the center arm of the gauge. The bottom surface of the center arm of the gauge has an active area of a smaller diameter than the circular diameter of the center arm portion of the transducer. The smaller active area is surrounded by a thicker stepped area which surrounds an active area on the pressure side of the H shaped member.

Abstract: A high pressure transducer has an H shaped cross-section with a center arm of the H having a top and bottom surface with the top surface of the H accommodating four strain gauges. Two strain gauges are located at the center of the top portion of the center arm of the H and are positive strain gauges, while two strain gauges are located near the periphery of the center arm of the gauge. The bottom surface of the center arm of the gauge has an active area of a smaller diameter than the circular diameter of the center arm portion of the transducer. The smaller active area is surrounded by a thicker stepped area which surrounds an active area on the pressure side of the H shaped member.

Abstract: A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.

Abstract: A fluid sensor is provided for determining a fluid characteristic, having an electronic sensor element that has an active surface for determining the fluid characteristic, having a mounting plate associated with the sensor element, and having a filter device associated with the sensor element for filtering the fluid, in which the active surface of the sensor element is oriented toward the mounting plate and in which the mounting plate is provided with an opening opposite from the active surface of the sensor element. According to an embodiment the invention, an end region of the filter device is accommodated in a sealed fashion in the opening of the mounting plate. Furthermore, the fluid sensor can be used for tire pressure measurement.

Abstract: A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

Abstract: The invention relates to a sensor unit for measuring a measurable variable, especially in an aggressive medium. Said sensor unit comprises a sensor which is disposed in a sensor casing and is provided with a sensor zone located on a base. In order to detect the measurable variable in the sensor zone, a measuring hole which allows the medium to advance directly to the sensor zone is provided in the sensor casing. A side of the sensor zone that faces away from the measuring hole is equipped with a measuring surface which encompasses measuring electronics. An electrical feeder is provided on the sensor in order to transmit a sensor signal generated by the measuring electronics. The sensor is sealingly arranged on a sealing surface located on the sensor casing in such a way that the measuring surface is isolated from the medium. A mechanism is provided by means of a which the sensor can be disconnected from thermally and/or mechanically induced changes in the sensor casing.

Abstract: The inventive circuitry on a semiconductor chip includes a first functional element having a first electronic functional-element parameter that exhibits a dependence relating to the mechanical stress present in the semiconductor circuit chip in accordance with a first functional-element stress influence function. The first functional element provides a first output signal based on the first electronic functional-element parameter and mechanical stress. A second functional element has a second electronic functional-element parameter that exhibits a dependence in relation to the mechanical stress present in the semiconductor circuit chip in accordance with a second functional-element stress influence function. The second functional element is configured to provide a second output signal based on the second electronic functional-element parameter and the mechanical stress.

Abstract: A semiconductor chip includes a first functional element having a first electronic functional-element parameter exhibiting a dependence relating to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a first output signal, a second functional element having a second electronic functional-element parameter exhibiting a dependence in relation to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a second output signal in dependence on the second electronic functional-element parameter and the mechanical stress, and a combination means for combining the first and second output signals to obtain a resulting output signal exhibiting a predefined dependence on the mechanical stress present in the semiconductor circuit chip, the first and second functional elements being integrated on the semiconductor circuit chip and arranged, geometrically, such that that the first and second functional-element stress influence functions ar

Abstract: An apparatus structure and measurement method are provided to retain high precision and high reliability of a semiconductor mechanical quantity measuring apparatus which senses a mechanical quantity and transmits measured information wirelessly. As to a silicon substrate of the semiconductor mechanical quantity measuring apparatus, for example, a ratio of a substrate thickness to a substrate length along a measurement direction is set small, and a ratio of a substrate thickness to a substrate length along a direction perpendicular to the measurement direction is set small. The apparatus upper surface is covered with a protective member. It is possible to measure a strain along a particular direction and realize mechanical quantity measurement with less error and high precision. An impact resistance and environment resistance of the apparatus itself can be improved.

Abstract: A MEMS based pressure sensor for flow measurements includes a pressure sense die located between a media seal and a conductive seal. Such a system includes a pressure sense die located between a media seal and a conductive seal. A sensing diaphragm is generally associated with the pressure sense die, wherein the sensing diaphragm deflects when a pressure is applied thereto. An impedance circuit is generally embedded with one or more resistors on the sensing diaphragm to which the pressure to be detected is applied. An ASIC is generally associated with the impedance circuit and the sense die, wherein the ASIC is placed on a lead frame for signal conditioning in order to detect a change in the pressure.

Abstract: A sensor element having a sensitive sensor portion on an upper side of a substrate layer. The upper side of the substrate layer is provided with a recess on the periphery of the sensitive sensor portion. The recess provides mechanical isolation or decoupling of the sensitive sensor portion, as a result of which external forces do not cause stress in the sensitive sensor portion. In addition, a sensor assembly is described which is provided with at least one sensor element and a casing.

Abstract: A pressure sensor including a pressure-sensor element having a monolithic body of semiconductor material, and a first main face and a second main face acting on which is a stress resulting from a pressure, the value of which is to be determined; and a package enclosing the pressure-sensor element. The package has an inner chamber containing liquid material, and the pressure-sensor element is arranged within the inner chamber in such a manner that the first and second main faces are both in contact with the liquid material. In particular, the liquid material is a silicone gel.

Abstract: In an integrated pressure sensor with a high full-scale value, a monolithic body of semiconductor material has a first and a second main surface, opposite and separated by a substantially uniform distance. The monolithic body has a bulk region, having a sensitive portion next to the first main surface, upon which pressure acts. A first piezoresistive detection element is integrated in the sensitive portion and has a variable resistance as a function of the pressure. The bulk region is a solid and compact region and has a thickness substantially equal to the distance.