Abstract: A device that contemplates a unique and advantageous reduced size catheter tip measurement device. By using a bottom support member and a thin outer insulating layer, rather than a tubular metal casing, to support and isolate the electrical measurement sensor, the present invention drastically reduces feature size possible with current structures for catheter tip measurement devices. More specifically, the device contemplates a reduced size catheter tip pressure transducer device. The device includes a catheter body that has a support member attached to its distal tip. The support member has a support surface for a semiconductor pressures sensor that provides mechanical stability to the pressure sensor. The exposed electrical and metal areas of the device are insulated from surrounding tissues and fluids by an outer insulating layer, which is preferably a polyimide sleeve.

Abstract: A pressure sensor comprises two sensor, a casing and a filter. A first sensor is a suction air pressure sensor for measuring the pressure of the air sucked in an internal combustion engine and the like. A second sensor is an atmospheric pressure sensor for measuring the atmospheric pressure. The casing accommodates the suction air pressure sensor and the atmospheric pressure sensor. The filter prevents the infiltration of solid matter and liquid form outside of the puressure sensor, and is mounted on the air introducing part of the atmospheric pressure sensor in the casing.

Abstract: A method of compensating for differences of temperature, in a pressure sensor of the kind wherein a pressure is sensed by use of a diaphragm connected in a Wheatstone bridge circuit. First measurement points of offset output signals emanating from the bridge in the pressure sensor at a number of temperature levels are plotted in a first graph indicating the voltage as a function of the resulting resistance of the bridge, whereupon adjacent measurement points are interconnected by straight lines and calculation is effected through interpolation between the measurement points. The sensitivity of the pressure sensor such as voltage/pressure unit, is determined in a corresponding manner at different temperature levels by plotting second measurement points in a second graph indicating the sensitivity as a function of the resulting resistance in a similar way the last mentioned measurement points are interconnected by straight lines, and calculation is effected through interpolation between the measurement points.

Abstract: A combustion pressure sensor suitable for a highly precise combustion control system of an automobile engine and a sensing system using the sensor. The combustion pressure sensor includes a SOI substrate having a three-layered structure of a first silicon plate, a thermal oxide film, and a second silicon plate, wherein a combustion pressure is sensed on the basis of a pressure or a force applied to the first silicon plate.

Abstract: A media-compatible, high-pressure transducer cell (12), a rugged sensor assembly (10) incorporating the cell (12), and a method for its production. The pressure cell (12) generally includes a metal body having a diaphragm (26), at least one dielectric layer (28, 38) on the diaphragm (26), and at least one thick-film piezoresistive element (34) on the dielectric layer (28, 38) for sensing deflection of the diaphragm (26). For purposes of compatibility with a wide variety of media, the metal body is preferably formed of steel, most preferably a stainless steel alloy such as an AISI Type 300 or 400 Series. The diaphragm (26) can be formed by etching or machining the metal body. The dielectric layers (28, 38) are preferably formed by thick-film processing as done for the piezoresistive element (34), employing materials that will adhere to the metal diaphragm (26), withstand the strains induced as the diaphragm (26) deflects, and faithfully transmit such strains to the thick-film piezoresistor (34).

Abstract: A compensation circuit for a resistance bridge corrects errors in the response of signal outputs thereof and has a voltage controlled current source across a power input and a ground reference providing a bridge excitation output current proportional to a fixed circuit reference voltage. A single resistor adjusts positive or negative values of the fixed part of the offset errors in the signal outputs response. Another resistor adjusts positive or negative slope of the temperature dependent part of the offset errors in the signal outputs response. A method compensates the offset errors with steps of energizing the bridge and measuring the output and resistance at two temperatures and at two pressures. The measurements are used to find correction resistances for variations in bridge offset, temperature and pressure response.

Abstract: The semiconductor pressure sensor has a pressure sensor unit with a pressure sensor chip for detecting pressure, peripheral circuitry for converting the pressure detected by the pressure sensor unit to an electrical signal and processing the electrical signal, a lead frame for fastening and electrically connecting peripheral circuitry, a package in which the peripheral circuitry and lead frame are integrated in a resin molding including a cavity in which the pressure sensor unit is housed, a cover for closing the opening of the cavity in which the pressure sensor unit is housed, and a pressure opening for conveying a pressure-conveying medium to the pressure sensor chip. The pressure sensor unit is fastened to the inside bottom of the cavity and is electrically connected to a particular part of the lead frame exposed inside the cavity.

Abstract: An improved piezoresistive pressure sensor or an improved piezoresistive pressure pickup having a pressure measuring cell (13), a transmission diaphragm housing (7), which comprises a jacket housing section, a transmission diaphragm (17) and a backplate (21) and having a fluid pressure chamber (19) situated on the measuring diaphragm side is distinguished by the following featuresthe jacket housing section of the transmission diaphragm housing (7) comprises a pressure chamber sleeve (33),the pressure chamber sleeve (33) and the backplate (21) consists of weldable steel,the transmission diaphragm housing (7) and thus the pressure chamber sleeve (33) are or can be inserted in an annular recess (31) in the connection housing (3) in a sealing manner,the connection housing (3) consists of a material which cannot be welded or cannot easily be welded, andthe pressure chamber sleeve (33) and the backplate (21) are permanently welded in a sealing manner so as to seal off the pressure transmission medium provided in th

Abstract: The present invention provides an improved method of wire-bonding on a semiconductor chip, especially a small acceleration sensor chip which is mounted on a substrate with an adhesive having low stress characteristics such as a silicon resin. Further, the present invention provides a semiconductor device having a structure in which the improved method of wire bonding is easily applicable. The wire-bonding is performed by giving ultrasonic vibrations to the wires and the pads on which the wires are bonded while imposing pressure thereon. The vibration is given in a direction along a radial line extending from the center of the semiconductor chip.

Abstract: A pressure switch element (1) including a semiconductor layer (3) having a diaphragm portion (5) in its center and a plate (2) having a through hole communicating with the exterior, which are stacked one on another so as to define a gas space (6) between the diaphragm portion of the semiconductor layer and the plate. The element (1) further includes an insulating layer (4) provided on the lower surface of the diaphragm portion (5), a first switch electrode (9) provided on the lower surface of the insulating layer (4), and a second switch electrode (10) behaving as a fixed electrode provided on the plate (2), such that chattering is prevented with a simple structure without using a complex electronic circuit.

Abstract: A pressure sensor comprises a diaphragm mounted on a housing and subject to pressure. Stress sensitive resistors are connected to circuit traces on the diaphragm which in turn are wirebonded to a compensation IC. The IC is directly mounted on the diaphragm principally or wholly in an area which is not subject to flexing. A connector has a dome partially covering the diaphragm and holds terminal blades having ends extending away from the diaphragm and opposite ends carrying bond pads located adjacent the diaphragm. An opening in the dome permits wirebonder access to connect bond pads on the traces with terminal bond pads. A cover is installed over the connector and sensor.

Abstract: A pressure sensor is provided with a compressible insert that is disposed within an internal opening of a potentially frangible component, such as a tubular glass member. If a condensate forms within the internal opening of the tubular glass member, freezing of the condensate can cause it to expand and damage the glass member. The compressible insert absorbs the expansion of the liquid condensate by compressing and prevents the expanding condensate from cracking the tubular glass member. The compressible insert, in a particularly preferred embodiment of this invention, has an opening extending therethrough to facilitate the transmission of pressure throughout the aligned openings of the pressure sensor. In one particular embodiment, a silicone die is etched to provide a cavity and corresponding diaphragm portion on which piezoresistive elements are disposed.

Abstract: A diaphragm (30) flexes in response to varying forces applied to the diaphragm (30). This motion is monitored by a transducer (31) that is preferably in a Wheatstone bridge configuration. When the diaphragm (30) is in a relaxed condition, with little or no force applied to the diaphragm, an offset voltage is generated by highly doped contact regions (35,36,37,38). At least one of these highly doped contact regions (35,36,37,38) is configured to have more squares of material which increases the resistance of that particular highly doped contact region (37).

Abstract: A semiconductor sensor provided with a planar circuit board and a resin package for protecting the circuit board. Further, a sensing element is mounted on the circuit board and outer electrodes are attached to a side edge portion of the circuit board. Moreover, includes the resin package, a groove, in which the circuit board is disposed. Thus the semiconductor sensor can be easily fabricated. Consequently, the manufacturing cost of a product or sensor can be reduced.

Abstract: A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship:0.65<L2/L1<1.As a result, it is possible to eliminate substantially a non-linear component of the temperature characteristics of an offset voltage generated by the pressure sensor.

Abstract: A method for passivating diamond films to substantially prevent them from oxidizing at temperatures up to 800.degree. C. in an oxygen atmosphere. The method involves depositing one or more passivating layers over the diamond film wherein one of the layers is nitride and the other layer is quartz. The passivation technique is directly applicable to diamond sensor pressure transducers and enable them to operate at temperatures above 800.degree. C. in oxygen environments. The passivation technique also provides an economical and simple method for patterning diamond films.

Abstract: A pressure sensor is provided with an insert member that reduces the dead space of a fluid conduit used to provide fluid communication between a pressure sensitive component and a cavity within which a volume is contained. The insert member is provided with a channel formed in its outer surface so that continued fluid communication can be maintained between the fluid whose pressure is to be monitored and a pressure sensitive component disposed within the structure of the pressure sensor. The use of the insert member significantly facilitates the manufacture of the pressure sensor and reduces the need to utilize pins of excessively small cross sectional area during the molding process.

Abstract: A pressure sensor comprising a hollow main body (1) defining a bore (3) extending therethrough. A pressure sensing assembly (12) is disposed within the bore (3) to divide it into a detection cavity (3a) for transmitting therethrough the pressure to be detected at a pressure receiving end (3c) thereof and an output cavity (3b) through which an output signal from the pressure sensing assembly (12) is to be supplied. A flexible metal diaphragm (40) is attached to the main body (1) at the pressure receiving end (3c) to seal the detection cavity (3a) in which a pressure transmitting medium (11) is filled. The flexible metal diaphragm ( 40) has a resonance frequency above an oscillation frequency range of the pressure to be detected. Preferably, the effective diameter of the diaphragm (40) may be from 7.5 mm to 8.5 mm and the thickness dimension thereof may be from 35 .mu.m to 45 .mu.m.

Abstract: A form pressure sensor diaphragm and method of making that allows for formation of long rectangular plate structures in semiconducting materials, especially silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.

Abstract: A pressure sensor for pressure detection in a combustion chamber of internal combustion engines of motor vehicles has a housing provided with an opening, a measuring element, a plunger arranged in the opening of the housing and having one end acting on the measuring element so that a measuring signal is produced proportionally to a pressure to be determined, the plunger directly abutting against the measuring element and having a material with a yielding point which is smaller than a breaking limit of a material of the measuring element, the end of the plunger which acts on the measuring element is spherical and abuts against the measuring element with such a contact surface that occurring stresses do not exceed a predetermined nominal value.

Abstract: A device and method for remotely zeroing a hydrostatic pressure compensation device are described which permit a fluid transducer, such as is used in conjunction with an intravenous catheter for the measurement of blood pressure, to be zeroed regardless of its elevation. A hydrostatic pressure compensation tube is placed in closed fluid communication with both faces of the transducer so as to provide the same pressure to each side. As an example, the transducer may measure the deflection with a piezoresistive or piezoelectric crystal or may alternatively utilize a semiconductor membrane with implanted resistive elements. The transducer may be coupled or formed integral to a manifold. In such a device, the transducer may be zeroed at any vertical position.

Abstract: A polycrystalline pressure sensor is formed by depositing polycrystalline silicon piezoresistors on a polycrystalline sensing diaphragm. The piezoresistors are arranged in a wheatstone bridge configuration. During operation, an alternating differential signal is applied across the input of the wheatstone bridge. A measured voltage difference between the output terminals of the wheatstone bridge is used to detect imbalance in the electrical piezoresistors that corresponds to pressure applied to the sensor. Pressure is thereby measured.

Abstract: A semiconductor-on-insulator structure includes a single crystal semiconductor substrate, an insulating layer on the single crystal semiconductor substrate, a recrystallized single crystal semiconductor layer on the insulating layer and having a subgrain, i.e., quasi grain boundary and a highly doped region including the quasi grain boundary and having a higher dopant impurity concentration than other parts of the single crystal semiconductor layer. Thus, a non-uniformity in the resistance is suppressed without reducing the piezoresistance effect of the structure.

Abstract: In a multiple function type differential pressure sensor including a semiconductor chip having a differential pressure detector for detecting a differential pressure, temperature detector for detecting a temperature, and static pressure detector for detecting a static pressure provided on a semiconductor substrate of a single chip, two or more pairs of differential pressure detectors means are incorporated, and a difference between outputs of the two or more pairs of differential pressure detectors is fetched out.

Abstract: The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor.The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).

Abstract: Pressure transducer circuitry accommodating pressure transducer variables for making pressure measurements in a living body. A microminiature piezoresistive pressure transducer has first and second variable resistive elements. The pressure transducer is characterized as having a pressure sensitivity ranging from 1.2 to 15 ohms per 1,000 ohms per 100 millimeters of mercury and a temperature characteristic greater than pressure sensitivity. Circuitry is coupled to the first and second variable resistive elements of the transducer including a known fixed resistive element. The known fixed resistive element is coupled to the first and second variable resistive elements for supplying a transducer excitation voltage through the known fixed resistive element to the first and second variable resistive elements. First and second amplifiers each having an input and an output are provided.

Abstract: A novel GaAs/AlGaAs piezoelectric FET strain sensing transducer is disclosed. An embodiment of the strain sensing transducer includes a single piezoelectric crystal structure forming a cantilever arm and having an FET at the fixed cantilever base. Circuitry connected to measure changes in the conductivity of the FET Channel provides an output signal indicative of the measured strain produced by small forces which alter the conductance of the FET due to piezoelectric effects.

Abstract: In a pressure sensor, a metallic pressure introducing pipe is fit into the pressure receiving inlet formed in a metallic housing and fixed there by welding. The housing has a flange portion in its upper portion, and the flange portion is fixed to the outer wall of a tank which is an object to be measured so that the pressure sensor body is located inside the tank. A porous filter made of fluoroplastics is arranged adjacently to the atmospheric pressure introducing inlet. An adhesive tape which is removable is attached to the atmospheric pressure introducing inlet. The pressure sensor can realize stabilized maintenance and highly reliable airtightness for a sensor element, less limitation to sensor layout design in a small space and also can surely introduce air with no drop of water and dust into the sensor.

Abstract: A pressure sensor comprises a diaphragm mounted on a housing and subject to pressure. Stress sensitive resistors are connected to circuit traces on the diaphragm which in turn are wirebonded to a compensation IC. The IC is directly mounted on the diaphragm principally or wholly in an area which is not subject to flexing. A connector has a dome partially covering the diaphragm and holds terminal blades having ends extending away from the diaphragm and opposite ends carrying bond pads located adjacent the diaphragm. An opening in the dome permits wirebonder access to connect bond pads on the traces with terminal bond pads. A cover is installed over the connector and sensor.

Abstract: A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.

Abstract: A method of fabricating a high pressure piezoresistive pressure transducer having a substantially linear pressure versus stress output over its full range of operation. The method involves bonding a carrier wafer having a dielectric isolating layer on one surface and a supporting member on the opposite surface, to a pattern wafer containing at least two single crystalline longitudinal piezoresistive sensing elements of a second conductivity. Both the pattern wafer and sections of the carrier wafer are etched leaving the piezoresistive sensing elements bonded directly to the dielectric isolating layer, and a diaphragm member having a deflecting portion and a non-deflecting portion. The diaphragm member is constructed to have an aspect ratio which is of the order of magnitude of one.

Abstract: A semiconductor pressure sensor of the invention comprises a silicon plate having a crystalline plane of (100) or (110), and the silicon plate comprises a diaphragm having the crystalline plane of (100) or (110), and a base surrounding said diaphragm. Further, a plurality of piezoresistor elements formed on the diaphragm. An area S (m.sup.2) and a thickness t (m) of said diaphragm satisfies a following relation:S/t.sup.2 <(.epsilon./(P.sup.3/2 K)).sup.1/3,where P (kPa) denotes applied pressure and .epsilon. (%) denotes a desired error of linearity of pressure, andK=1*10.sup.-4 (kPa).sup.

Abstract: A pressure sensor assembly including semiconductor transducer elements disposed upon a diaphragm support structure, wherein the support structure is comprised of a plurality of substrate layers anodically bonded together. A groove is disposed in the support structure creating an area of reduced thickness within the support structure. The ares of reduced thickness acts as a stress concentration region. As such, the transducer elements are disposed within the ares of reduced thickness so as to efficiently monitor any deformations experienced by the support structure. The groove that creates the ares of reduced thickness is formed in each of the substrate layers, prior to bonding into the overall structure, as such a very accurately tolerance groove can be formed into the structure which greatly increases the reliability of the structure.

Abstract: A pressure sensor comprises a substrate and a layer defining together with said substrate a pressure sensor cavity, said layer including a diaphragmlike area which is adapted to be acted upon by an external pressure. A micro-miniaturizable pressure sensor of the above-mentioned type, which is used for differential pressure measurement or for relative pressure measurement, is provided on the basis of the features that said cavity is followed by a channel which extends along the surface of said substrate, said channel comprising a layered structure including also the layer which also defines the diaphragmlike area of the pressure sensor, the ratio of the width of the channel to the thickness of the layered structure above the channel being smaller than the ratio of the smallest extension of the diaphragmlike area in the diaphragm plane to the thickness of the diaphragmlike area.

Abstract: A pressure detector comprises a pressure sensitive element composed of a semiconductor substrate having at least four gauge resistances and outputting signal in response to a pressure. A pressure transmission member is provided on the surface having the gauge resistors of the pressure sensitive element, for transmitting the pressure to the pressure sensitive element. Taking a crystal face of (110) as the face orientation of the pressure sensitive element, a bridge circuit is constructed by disposing a pair of gauge resistors in the direction of <110> of the crystal axis, disposing another pair of gauge resistors in the direction of <100> of the crystal axis and by connecting them each other. The bridge circuit is located within a pressurized surface which the pressure transmission member presses. Further, temperature compensating resistors are disposed in the direction of <100> of the crystal axis so as to be located also within the area of the pressurized surface.

Abstract: A pressure transducer for use with a pneumatic tire monitoring system includes a non-conductor resilient layer and a piezo-resistive/variably conductive layer having a composition which provides substantially constant resistant while under a substantially constant load. In a preferred embodiment, the piezo-resistive/variably conductive layer includes N-type semiconductor material, molybdenum disulfide, titanium, bismuth oxide, and alkyd or silicone binder. The transducer also includes conductive elements which are attached to a nonconductive substraight and electrically insulated from each other. The piezo-resistive/conductive layer contacts at least two of the conductive elements with a surface area which is responsive to a change in pressure so as to produce a variable resistant/conductives between the conductive elements. In one embodiment, the piezo-resistive/conductive layer is hemispherically shaped and divided to produce two independent sensing transducers.

Abstract: A novel pressure measurement apparatus for measuring fluid pressures generated within a fluid passageway is disclosed. The apparatus includes a semiconductor pressure transducer which is mounted to a chip carrier comprised of a ceramic substrate layer. The semiconductor pressure transducer is reverse mounted to the substrate layer by way of a series of electrically conductive epoxy bond points. The semiconductor pressure transducer is enclosed within a gel cap containing an incompressible gel medium. Fluid pressures generated within the fluid passageway are communicated to the transducer via the gel medium.

Abstract: A magnetoresistive sensor may be constructed with material having a perovskite-like crystal structure and an increased magnetoresistive effect. The material is based on the composition (A1).sub.1-x (A2).sub.x MnO.sub.z, with A1 (trivalent) selected from Y, La, or a lanthanide, A2 (bivalent) from an alkaline-earth metal or Pb, and with 0.1.ltoreq.x.ltoreq.0.9 and 2.0.ltoreq.z.ltoreq.3.5. The sensor contains a layer system with at least two layers with different materials, but in each case in the context of the aforesaid composition, which is selected so that the temperature correlation of the electrical resistance is relatively small. The two layers of the layer system can also be united into a single layer structure with a concentration gradient.

Abstract: A transducer housing for mounting a port in a combustion chamber has a metal diaphragm exposed to the combustion gasses. The pressure of the combustion gasses deflects the diaphragm which locally deflects a simply supported beam. The beam is formed of refractory material having epitaxially grown crystalline piezoresistors formed on one surface of the beam and connected in a bridge circuit. Noble metal foil leads connect to the piezoresistors to form the bridge and provide attachment pads. The pads are noble metal welded to other noble metal foil pads provided on a ceramic substrate to form a sensor subassembly for mounting adjacent the diaphragm to form a transducer.

Abstract: Piezoresistive pressure transducer circuitry accommodating transducer variables comprising microminiature pressure transducer having first and second variable resistive elements each having first and second ends, circuitry coupled to the first and second resistive elements of the transducer including third and fourth fixed resistive elements each having a first and second ends, means interconnecting the first ends of the first and second resistive elements, means interconnecting the second ends of the first and third resistive elements, means interconnecting the second ends of the second and fourth resistive elements, means interconnecting the first ends of the third and fourth resistive elements, means for supplying excitation to the first ends of the third and fourth resistive elements, first amplifier means having an input coupled to the means interconnecting the second ends of the first and third resistive elements, second amplifier means having an input coupled to the means interconnecting the second end

Abstract: The invention relates to a process for making an oblique-sided recess in a substrate in which areas of the surface of the substrate corresponding to the recess to be made are covered with an etching mask which is not attacked by an isotropic etching liquid, whereupon an isotropic etching is effected. In order to be able to make oblique sides of very slight slope with such a process, a layer (4) which is removable by the isotropic etching liquid is applied to the surface areas (3) of the substrate (2) before the application of the etching mask (5).

Abstract: To ensure insensitivity to electromagnetic interference and to charge influences from the oil fill and achieve good long-term stability, this pressure-measuring arrangement comprises: a pressure sensor having a base and an associated diaphragm with strain gages deposited thereon; a header of insulating material with leads and with an oil filler neck, said header of insulating material having the base mounted thereon, and said leads making electrical contacts to the strain gages; a metal body having a first central recess in a first cross-sectional surface, a second central recess in a second cross-sectional surface facing away from the first cross-sectional surface, and a hole connecting the first recess with the second recess, said first cross-sectional surface being tightly joined at its edge to the header of insulating material, and said first recess accommodating the substrate and diaphragm without touching them; an electrically conductive foil having an opening, said foil being disposed in the first rece

Abstract: A pressure sensor is capable of detecting a certain pressure and an atmospheric pressure individually and independently in real time, with miniaturization and light weight. This is attained by providing a pressure sensor comprising a first pressure sensor; and an atmospheric pressure sensor. Each sensor includes a pressure-sensitive element and a circuit for amplifying an output signal from the pressure-sensitive element. The amplifying circuit for the first pressure sensor, and the pressure-sensitive element and the amplifying circuit for the atmospheric pressure sensor are provided on the same chip. The amplifying circuit compensates for nonuniformity in characteristics of the pressure-sensitive element due to temperatures.

Abstract: A sensor for detecting physical amount in which a gauge resistance value is made not to change even when a wiring material presents a yield phenomenon by wiring a wiring material Such as aluminum presenting a yield phenomenon by thermal stress in a stress insensitive direction of a piezogauge.

Abstract: A pressure-adjusting device for adjusting an output of an integrated pressure sensor in which a silicon wafer is joined onto a seat that has pressure-adjusting passages formed therein, and which has formed in the silicon wafer a signal processing circuit with an adjusting resistor for each chip, a thin diaphragm for each chip and a piezo-resistance layer for each chip. The pressure-adjusting device includes a pressure-setting stage on which the seat is placed, the pressure setting stage having pressure-adjusting passages formed therein to adjust a pressure exerted on the respective thin diaphragm via the pressure-adjusting passages formed in the seat. A holding member is arranged on the pressure-setting stage as to surround at least an outer periphery of the seat. A first elastic air-tight member is arranged on the pressure-setting stage as to surround the outer periphery of the seat and be held compressed by the pressure-setting stage and by the holding member.

Abstract: A modular pressure sensor has a pressure-sensing element, electrical terminals, interconnections, and a support substrate. The pressure-sensing element produces an electrical signal indicative of pressure at local contacts and the interconnections apply the signal to the electrical terminals. The electrical terminals are secured to the substrate and extend along a peripheral surface of the substrate. The modular pressure sensor can mount, with different orientations, to a header to form a pressure transducer.

Abstract: In a pressure sensor, a force is transferred via a pressure plunger end made of relatively hard material onto a measurement element including a sensor membrane on a support. The sensor membrane is part of a micromechanical arrangement made of silicon. A metal structure made of a metal of lower hardness compared with the hardness of the material of the pressure plunger end is applied onto the sensor membrane. This metal structure can be impressed and plastically deformed with increased force by the contact surface of the pressure plunger end, in such a way that conforming contact of the contact surface is achieved, and potential angular errors are compensated for.

Abstract: A diaphragm portion 20 causes deflection, when high-temperature fluid pressure acts on the pressure sensing surface A of the diaphragm portion 20. This deflection is transmitted via pressure transmitting members 7, 8 to a deflection sensing member 6 which generates an electric signal in response to a pressure received.The diaphragm portion 20 has a recess portion 21 at its center. The recess portion 21 is symmetrical about a central axis of the diaphragm portion 20. A tip end of the pressure transmitting member 7 is brought into contact with the recess portion 21 at a central point. A tapered portion 2d of the diaphragm 20 has a thickness of t.sub.3 which is not larger than the thickness t.sub.1 of an outer peripheral portion 2b or t.sub.2 of a central bottom portion 2c. Furthermore, a heat insulating plate can be provided on the diaphragm to protect the surface A of the diaphragm portion from heat radiation of high-temperature fluid.

Abstract: A pressure sensor die is provided with a flexible membrane and a plunger which combine to amplify a low pressure signal while also providing media isolation between a fluid being measured and the internal components of a pressure sensor. One embodiment of the pressure sensor disposes an end of the plunger in direct contact with a pressure sensor die while another embodiment disposes an elastomeric diaphragm between the plunger and the pressure sensor die. This second embodiment creates a chamber between the plunger and the pressure sensor die in which a fluid is captured by movement of the plunger. The captured fluid is decreased in volume by movement of the plunger and the resulting increase in pressure in transmitted to a pressure sensitive portion of a pressure sensor die. The device is particularly useful in conjunction with applications where media isolation is required between the fluid being measured and the components of the pressure sensor, such as kidney dialysis machines.

Abstract: A pressure sensor for fluids includes first, second, third and fourth strain gauges disposed on a diaphragm with prescribed spacing so that the majority of current flowing through the first strain gauge has a predetermined direction and the majority of current flowing through each of the second, third and fourth strain gauges has a direction identical with or opposite to the predetermined direction, first and second conductors interconnecting the first and second strain gauges and the third and fourth strain gauges, and first and second voltage leads connected to the first and second conductors from the side identical with or opposite to the direction of a vector product determined by a vector in the direction of current flow through the conductors and a vector in a direction normal to the diaphragm. The configuration causes voltages produced in the conductors by the Hall effect to cancel out, thus making the pressure sensor immune to the effect of magnetic fields.