Abstract: A differential and absolute transducer are secured to a Pyrex glass header by means of a glass metal frit or other suitable interface. One of the sensors measures absolute pressure and the sensor is a sealed cavity, while the other sensor is designed to measure differential pressure and the sensor is an aperture which permits the pressure media to reach both sides of the sensor. The header itself has a through hole connected to a tube over which the differential sensor is affixed. The Pyrex glass is chosen to match the coefficient expansion of the sensors. The header in turn is attached to an adapter that enables static pressure to be applied to both sensors simultaneously and total pressure applied to the differential sensor, thus permitting the measurement of the difference between the total pressure and the static pressure.

Abstract: A resonant sensor comprises a support structure comprising two support points; a laminar resonator suspended between said two support points of said support structure and comprising a plurality of substantially parallel flexural members which are responsive to relative movement of said support points; means for exciting said resonator into a balanced mode of oscillation and means for sensing motion of said resonator. Said means for sensing motion of said resonator is or are spaced from, and linked to, said flexible area of said resonator by means of levers. Said support points are preferably adapted to move relative to each other in response to a difference in pressure, force or acceleration.

Abstract: A method of manufacturing an air pressure sensor is disclosed. A plurality of sensor circuitry modules are formed on a first side of a silicon wafer. A plurality of cavities on a second side of the silicon wafer are formed. Each of the plurality of cavities is aligned with one of the plurality of sensor circuitry modules. A glass wafer is attached to the second side of the silicon wafer. The silicon wafer and the glass wafer are cut such that a single sensor circuitry module is separated from the other sensor circuitry modules and a portion of the glass wafer remains attached to the sensor circuitry module so that the cavity opposite the sensor circuitry module is enclosed by the portion of the glass wafer to form a reference pressure chamber therebetween. The sensor circuitry module is flexibly mounted to an interior surface of a sensor housing. The sensor circuitry module is electrically connected to external conductive connectors.

Abstract: A differential and absolute transducer are secured to a Pyrex glass header by means of a glass metal frit or other suitable interface. One of the sensors measures absolute pressure and the sensor is a sealed cavity, while the other sensor is designed to measure differential pressure and the sensor is an aperture which permits the pressure media to reach both sides of the sensor. The header itself has a through hole connected to a tube over which the differential sensor is affixed. The Pyrex glass is chosen to match the coefficient expansion of the sensors. The header in turn is attached to the tubular member provided with a fitting such that static pressure can be applied to both sensors simultaneously. At the other end of the tubular member, there is provided another fitting attached to the tube in the header through which the total pressure can be applied to the differential sensor, thus permitting the measurement of the difference between the total pressure and the static pressure.

Abstract: A process for the production of a device for measuring or detecting, particularly a probe or a detector, includes the steps of pre-mounting the different active components of the device, of which certain are ultimately gathered in functional subassemblies on and/or in a support body, then potting the pre-mounted resulting assembly, as well as its connection regions with a connection and/or supply cable, to form a substantially monoblock member and, finally, overmolding under pressure the potted member, as well as the proximal portion of the cable, with a thermoplastic material compatible with the resin used, to obtain an apparatus or instrument having the desired shape.

Abstract: A method and system comprising providing a plurality of control signals, the control signals having one or more on periods that do not coincide with the on periods of the other control signals and a first frequency at which the one or more on periods are repeated, the method and system also including driving a plurality of process measurement transducers in response to the control signals by selectively coupling the transducers to ground, and capturing the output of the process measurement transducers within the one or more on periods of the control signals.

Abstract: A pressure transducer including: a silicon substrate including: a first surface adapted for receiving a pressure applied thereto, an oppositely disposed second surface, and a flexing portion adapted to deflect when pressure is applied to the first surface; at least a first sensor formed on the second surface and adjacent to a center of the flexing portion, and adapted to measure the pressure applied to the first surface; at least a second gauge sensor formed on the second surface and adjacent to a periphery of the flexing portion, and adapted to measure the pressure applied to the first surface; a glass substrate secured to the second surface of the silicon wafer.

Abstract: A piezoresistive pressure sensor that makes use of n-type boron nitride as the piezoresistive material. The boron nitride enables the sensor to provide suitable performance in hostile environments. The sensor includes a titanium substrate covered with a diamond insulator layer. An n-type boron nitride piezoresistive element is deposited on the diamond layer, and is electrically connected to electrical contacts. The electrical contacts are electrically connected to a resistive measurement system for determining the resistance of the piezoresistive element. In an alternate embodiment, the boron nitride piezoresistive material is used in a micobolometer for a focal plane array.

Abstract: A pressure and temperature sensor includes a sealed insulating package and an elastic, piezoelectric substrate deformably supported within the package. At least three surface-acoustic-wave resonators are affixed to a bottom of the substrate. A first and a second resonator are positioned in parallel relation along the substrate. A third resonator has a long axis nonparallel to the long axes of the first and the second resonator. The temperature coefficients of the first and second resonators are substantially equivalent; that of the third is different from those of the first and the second resonator, for permitting a temperature change to be sensed. Electrical connectors extend between the resonators to the outside of the package. A sensing system also includes an antenna for sending and receiving electromagnetic signals to and from the device.

Abstract: A sound pressure sensing device comprises a piezoelectric substrate, an input interdigital transducer, a first output interdigital transducer, a second output interdigital transducer, a diaphragm, a liquid tank, and a signal analyzer. All the input-, the first output-, and the second output interdigital transducers are formed on one end surface of the piezoelectric substrate. The liquid tank has a liquid in contact with the other end surface of the piezoelectric substrate and an inner surface of the diaphragm. If an input electric signal is applied to the input interdigital transducer, an elastic wave is excited in the piezoelectric substrate. A leaky component of the elastic wave is radiated effectively in the form of a longitudinal wave into the liquid. The longitudinal wave is reflected in the liquid by the diaphragm. A reflected longitudinal wave is detected at the first output interdigital transducer as a first delayed electric signal.

Abstract: A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Abstract: A high temperature pressure transducer employing dielectrically isolated beta silicon carbide pressure sensing elements situated on a diaphragm also fabricated from beta silicon carbide. The dielectrically isolated pressure sensing elements are formed on the diaphragm in method which employs two separately fabricated wafers that are later bonded together.

Abstract: The pressure sensor component has a chip carrier carrying a semiconductor chip with an integrated pressure sensor having a pressure-detecting surface exposed to the pressure to be measured. A device encapsulation made from an electrically insulating material surrounds the entire assembly except for protruding electrode terminals. Bond wires connect the electrode terminals with the pressure sensor and/or the electronic circuit of the semiconductor chip. The device encapsulation consists entirely of a homogeneous pressure-transmitting medium comprising an enveloping compound, which transmits the pressure to be measured as free from delay and attenuation as possible but is mechanically resistant and dimensionally stable. The pressure to be measured is transmitted directly by the enveloping compound onto the pressure-detecting surface of the semiconductor chip, and the pressure sensor and/or the pressure sensor component is covered tightly on all sides against mechanical and/or chemical influences.

Abstract: A method for manufacturing micro pressure sensors and the structure of the micro pressure sensor are disclosed. A bulk silicon wafer is provided to have an upper face formed thereon a desired circuit arrangement including a plurality of contact pads. The bulk silicon wafer defines a cutoff in an upper side portion thereof. A glass substrate is then provided to have an upper face defined therein a shallow cavity. The glass substrate has a plurality of contact pads formed on the upper face thereof. The bulk silicon wafer is bonded to the glass substrate in such a manner that the upper face of the bulk silicon wafer is attached to the upper face of the glass substrate and the plurality of contact pads on the bulk silicon wafer securely attach to the plurality of contact pads on the glass substrate. An etching process is undertaken to reduce the bulk silicon wafer down to a thin membrane. Finally the bulk silicon wafer is etched to expose the contact pads on said glass substrate.

Abstract: A pressure sensing device for producing an output proportional to an applied pressure irrespective of vibration and acceleration of the device, the device including: a first deflecting diaphragm formed in a first wafer and including a first plurality of piezoresistors mounted thereon, the first diaphragm being responsive to the applied pressure and vibration of the device; and, a second deflecting diaphragm formed in the first wafer and including a second plurality of piezoresistors mounted thereon, the second diaphragm being responsive only to vibration of the device; wherein, the first and second pluralities of piezoresistors are electrically coupled together to provide a common output such that they cooperatively at least partially cancel a portion of the common output associated with the vibration of the device.

Abstract: A sensor including a center post extending along the sensing axis of the sensor, a piezoelectric sensing element concentrically engaging the center post, and a preload element preloading the piezoelectric element radially outward to the axis. The center post includes a recess along the axis and the first preload element is in the recess and preloads the piezoelectric element radially outward. The sensor may include a mass concentrically engaging the piezoelectric element. The sensor senses acceleration, force or pressure.

Abstract: A pressure transducer including: a silicon substrate including: a first surface adapted for receiving a pressure applied thereto, an oppositely disposed second surface, and a flexing portion adapted to deflect when pressure is applied to the first surface; at least a first sensor formed on the second surface and adjacent to a center of the flexing portion, and adapted to measure the pressure applied to the first surface; at least a second gauge sensor formed on the second surface and adjacent to a periphery of the flexing portion, and adapted to measure the pressure applied to the first surface; a glass substrate secured to the second surface of the silicon wafer.

Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

Abstract: A method for sealing a transducer of a type having a diaphragm with an active region and an inactive region, a stress sensing network associated with the active region of the diaphragm, contacts associated with the inactive region of the diaphragm, and lead-outs for coupling the stress sensing network to the contacts. The method comprises oxidizing the transducer to provide a first oxide layer which covers the diaphragm, the stress sensing network, the lead-outs and the contacts. Next, a layer of semiconductive material is deposited over the first oxide layer and is then planarized to provide a planar surface having a substantially flat and bondable surface. Finally, a cover member is bonded to the planar surface of the layer which covers the inactive region of the diaphragm to hermetically seal the stress sensing network and thereby provide a sealed transducer.

Abstract: A microsensor for identifying a change in a characteristic of an environment having temperatures of up to approximately five hundred degrees Centigrade includes a substantially flat insulator layer made of silicon oxide. A base layer made of silicon is integrally attached to one side of the insulator layer and a support layer is integrally attached to the other side of the insulator layer. Together the base layer and the support layer stabilize the support layer which is only about one thousand angstroms thick. A sensor element is mounted on the exposed surface of the support layer, and opposite the insulator layer, to generate a signal in response to the change in the environmental characteristic. Additionally, there is an electronic element which is processed into the support layer. This electronic element is electrically connected directly with the sensor element to process the signal and indicate an appropriate response.

Abstract: A semiconductor composite sensor using a plurality of semiconductor piezoresistive gauge elements connected in series. The piezoresistive elements are separated so that a high potential terminal of one of the resistive elements having the same resistance values and the substrate of the other of the resistive elements will be connected with equal potential values. Potential difference values between semiconductor regions serving as respective resistive elements and the substrates are made equal.

Abstract: The pressure sensor component has a chip carrier with an approximately planar chip carrier surface. A semiconductor chip with an integrated pressure sensor is placed on the chip carrier surface. A pressure-detecting surface area of the pressure sensor is exposed to a pressure to be measured. The component is encapsulated with electrically insulating material that encloses the semiconductor chip and/or the chip carrier at least in regions. A chimney-shaped connection piece that projects up relative to the pressure-detecting area of the pressure sensor penetrates through the encapsulation and is connected to the pressure sensor. The connection piece, which is a separate structural element is incorporated in the component encapsulation and it encloses at least the pressure-detecting surface area in a pressure-tight manner with its end bearing on the semiconductor chip. The connection piece is open toward the outside at its opposite end so as to expose the pressure sensor to the pressure to be measured.

Abstract: A circuit arrangement implemented as an integrated semiconductor component has a measured value acquisition circuit that can be connected to an analysis circuit, in particular a piezoresistive measuring bridge containing piezoresistive measuring shunts diffused on a semiconductor substrate. The piezoresistive measuring shunts are connected to metallic terminal contacts by diffused terminal resistors having a negligible piezoresistive resistance. To avoid terminal-related offset errors on the measuring shunts in particular, the terminal resistors are designed as identical, elongated, generally curved area structures that taper toward the front end and are connected to a measuring shunt on the front end and to a metallic terminal contact on the opposite end.

Abstract: A pressure switch with improved sealing of an airtight chamber, and improved electrical characteristics reducing chattering, increasing response rate, and minimizing the pressure necessary for activation. The pressure switch includes an upper substrate with a diaphragm readily deformed by an applied stress, a lower substrate overlapped with the upper substrate to form the airtight chamber, a contact electrically switched in response to the deformation of the diaphragm, and a sealing member continuously surrounding the airtight chamber, disposed between the first and second substrate, and hermetically sealing the airtight chamber.

Abstract: A semiconductor component (31) and a method for coupling a semiconductor device (36) to a substrate (81). The semiconductor component (31) includes a saddle (34) and the semiconductor device (36). The saddle (34) has a plurality of sides (51, 52, 53, 54, 55) that form a semiconductor device receiving area (58). The semiconductor device (36) is inserted into the semiconductor device receiving area (58) and secured in the semiconductor device receiving area (58) using tabs (66, 67). The saddle (34) is coupled to the substrate (81) by fasteners (82,83).

Abstract: A method and a pulse pressure sensor for sensing an arterial pulse pressure waveform. In one embodiment, the pulse pressure sensor includes a housing, a diaphragm, a piezoelectric device, and a self-contained amplifier. The skin-contact diaphragm is attached across a recess or opening in the housing. The piezoelectric device has a first portion mounted in a fixed relationship to the housing and a second portion displacementally coupled to the diaphragm. The solid-state amplifier has a signal input coupled to the piezoelectric device, wherein the piezoelectric device and amplifier together have a frequency response at least including a range from below approximately 0.1 hertz to above approximately 250 hertz. In one such embodiment, the housing and the skin-contact diaphragm of the sensor are stainless steel. In one such embodiment, the diaphragm has a skin-contact surface with a skin-contact dimension of between approximately 0.4 inch and 0.6 inch.

Abstract: A monolithic, integrated circuit sensor combining both a differential pressure sensor and a flow sensor on the same silicon chip. The integrated circuit has a diaphragm with a number of piezo-resistive elements placed on it in the normal manner for a pressure sensor. In addition, a channel is provided between the spaces on the two sides of the diaphragm. The channel has a cross-section which is a fraction of the size of the diaphragm. In one embodiment, the channel is a hole in the diaphragm. In another embodiment, the channel is an etched groove in the frame supporting the diaphragm.

Abstract: A pressure sensor for measuring high pressures, the sensor being adapted to act externally on a measuring element, the measuring element having a central cavity and being composed of two parts which are sealingly joined in order to form the cavity, and comprising sensor means for measuring the mechanical stress condition of the measuring element. The two parts of the measuring element are manufactured in planar technology form silicium or quartz and have a substantially larger length than lateral dimensions, the cavity being oriented in a longitudinal direction, and the sensor means being piezo-resistive elements lying adjacent to the external or internal surface of the measuring element.

Abstract: A sensor (10) includes a plurality of sensing elements (14-20) deposed on a sensor substrate (12) and an electronic switching circuit (22) electrically connected to each of the sensing elements (14-20) for electrically selecting at least one of the sensing elements (14-20).

Abstract: The invention relates to a measuring indicator device comprising a modular pressure transducer, a modular line socket connected to a device connector and a modular casing having a display. In order to improve the usefulness and provide simultaneous simple assembly, the pressure transducer and the device connector with the line socket are connected to opposing sides of the casing so that the casing is capable of rotating about its longitudinal axis.

Abstract: A pressure in a pressurizing chamber of a micromachine apparatus for transferring a fluid is measured inexpensively under an actual-use or a similar condition. A piezoelectric element used as an actuator for applying a pressure to the fluid in the pressurizing chamber is also used as a pressure sensor. A charge amplifier is used to measure the amount of charge Q.sub.1 applied to an electrode of the piezoelectric element when the piezoelectric element is driven while the pressurizing chamber filled with the fluid, and the amount of charges Q.sub.2 when the piezoelectric element is driven while the chamber contains no fluid. The obtained signals are inputted to a storage and operation processing device to determine (Q.sub.1 -Q.sub.2) to determine the pressure of the fluid in the pressurizing chamber. The piezoelectric element or capacitor for the purposes of comparison can be used to simultaneously measure Q.sub.1 and Q.sub.2.

Abstract: A semiconductor pressure detecting device which effectively reduces stress that occurs on a base member due to welding between cap and the base member or any external load. The semiconductor pressure detecting device includes a semiconductor sensor element capable of detecting a strain and/or stress that occurs on a thin-walled pressure receiving portion; a pedestal seat for joining and supporting the semiconductor sensor element; a base member for joining and supporting the pedestal seat; and a cap member welded and joined to the base member so as to cover the base member, the pedestal seat and the semiconductor sensor element.

Abstract: A pressure sensor includes a metallic membrane and a frame. For detecting the deflection of the membrane, a silicon bridge element having piezoresistive resistor elements is arranged on the membrane and the frame.

Abstract: An apparatus and method for making ultra high temperature silicon carbide pressure transducers which prevents the deterioration of contact areas under harsh conditions, such as high temperatures and oxidizing atmospheres includes a first substrate of silicon carbide with a plurality of piezoresistive elements disposed on a central active region. A plurality of generally L-shaped contact areas extend from and substantially surround the central active region. On each contact area a metalized contact is formed. An isolation moat etched around the periphery of the first substrate separates each contact area from the other, and separates the contact areas from the periphery of the device. A second substrate of silicon carbide having a plurality of apertures extending therethrough which align with and correspond to a contact on each contact area is joined to the first substrate by electrostatic bonding or by employing a glass frit.

Abstract: A pressure sensor including a substrate having a diaphragm portion. A diaphragm-defining recess is recessed inwardly from one surface of the substrate to define the diaphragm portion between a bottom surface of the recess and an opposite surface of the substrate. A recess is disposed within the diaphragm portion. A pressure sensitive arrangement is disposed in the substrate, a detector portion of which is disposed within the recess formed within the diaphragm portion.

Abstract: The pressure sensor component is mountable on the component-mounting surface of a printed circuit board. The component has a chip carrier of electrically insulating material formed with a substantially flat chip carrier surface. A semiconductor chip with a pressure sensor is fastened on the chip carrier surface. Electrode connections with a surface-mountable structure penetrate the chip carrier and they are electrically connected to the semiconductor chip. The chip carrier is filled with a flowable filler completely covering the semiconductor chip.

Abstract: A sensing apparatus having a body member with a portion engageable with a work object having a medium to be sensed; and a system for registering at predetermined criterion, relative to the body member, during engagement of the portion of the body member with the work object, as an index of the medium. A method for manufacturing a resultant work piece having at least one projection thereon, the method including the steps of cutting a first work material to form the projection on a portion of the first work material, mounting the projection on a second work material and removing the remainder of the first work material from the projection to form the resultant work piece.

Abstract: A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway.

Abstract: In a multiple function type differential pressure sensor including a semiconductor chip having a differential pressure detector for detecting a differential pressure, temperature detector for detecting a temperature, and static pressure detector for detecting a static pressure provided on a semiconductor substrate of a single chip, two or more pairs of differential pressure detectors means are incorporated, and a difference between outputs of the two or more pairs of differential pressure detectors is fetched out.

Abstract: A yaw rate detector and method of detecting yaw rate. The detector includes a sensor surrounded by a uniformly distributed gel-like material. The gel-like material is retained in a certain shape by a pair of parallel surfaces. The pressure of the gel-like material is affected by centrifugal force, which is sensed by the sensor. The sensor simultaneously detects pressure changes in the gel-like material on opposite sides of the sensor, which permits the detector to sense the angular velocity of rotation of the sensor. The sensor is a semi-conductor pressure sensor formed on a circuit substrate.

Abstract: The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.

Abstract: An improved fluid pressure sensor/sensor array is shown to provide high resolution, sensitivity which can be easily controlled based on anticipated or detected pressure range, and reliable pressure measurements with easy installation and low fabrication cost. A fluid pressure sensor is provided having a substantially incompressible mounting structure with a cavity formed therein. An elastic membrane is attached to said mounting structure and across said cavity, separating the cavity from the fluid to be measured. At least one non-contact transducer is attached to the mounting structure in the cavity to detect deflection at a selected plurality of regions on the membrane. The sensitivity and pressure range of the sensor can be chosen by preselecting the elasticity of the membrane, stretching the membrane across the cavity under a preselected tension, maintaining a predetermined reference pressure in the cavity, and/or actively controlling the membrane tension.

Abstract: A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a <110> direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the <110> direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

Abstract: A pressure transducer, in particular for sensing a lateral collision in a motor vehicle, delivers an electric useful signal which is determined by a relative pressure change relating to a pressure event. Low-frequency changes in an output signal of a sensor device, which depend on the ambient pressure, are compensated by a control device with an integrating behavior. The sensitivity of the sensor device, as a manipulated variable, changes in a manner inversely proportional to the ambient pressure. Higher-frequency pressure changes in the output signal of the sensor device are not compensated, but as a result of the variable sensitivity of the sensor device, determine as relative pressure changes the useful signal, which is additionally independent of temperature influences and offset errors of the pressure transducer.

Abstract: A Measurement device for medical applications is disclosed, comprising an intracorporeal sensor element (5), a extracorporeal evaluation unit and electrical connections (2, 6) between the sensor element (5) and the evaluation unit. The device comprises a flexible foil tape cable (1), which is intended for the electrical and mechanical connection of the evaluation unit with the sensor element (5) and a substrate (4), which is mechanically connected with the one end (3) of the foil tape cable (1) around the sensor element (1). The substrate (4) has an higher mechanical strength than the foil tape cable (1). The sensor element (5) is connected to electric cables (2) of the flexible foil tape cable (1) and the substrate (4) is enclosed with the sensor element (5) in a flexible mass (7).

Abstract: An IC chip for signal processing circuit is enclosed in a mold IC and a pressure sensitive element unit is integrally provided thereon. When the mold IC is housed in a case, the mold IC is fixed to the case under a state where ends of connector pins insert-molded to the case are electrically connected to external terminals of the mold IC. Thereby, a sensor signal is outputted from other ends of the connector pins. By integrating the IC chip for signal processing circuit in the mold IC, the IC chip for signal processing circuit can be protected against a contaminated environment at a location where the pressure sensitive element unit is arranged.

Abstract: An air data measurement system includes a device for sensing air pressure outside an aircraft, a pressure transducer in fluid communication with the air pressure sensing device and having a piezoresistive bridge attached on a flexible diaphragm. The piezoresistive bridge has an electrical resistance which varies in response to the sensed air pressure applied to the diaphragm and whose sensitivity varies with the magnitude of the excitation current passing therethrough. The system also includes a current supply operatively connected to the pressure transducer for supplying and varying the magnitude of the excitation current to the piezoresistive bridge. Further included is an output device connected to the pressure transducer for sensing a change in the electrical resistance of the piezoresistive bridge and outputting a signal from the piezoresistive bridge corresponding to the sensed air pressure.

Abstract: A non-invasive sensor assembly device includes a pedestal mounted sensor die for stress isolation of the sensor die from external stresses, a substrate and die porting configuration to limit exposure of the sensor assembly to only the interior of the sensor die and a connecting tube to provide significant isolation of the sensor assembly and its constituent parts from the fluid stream, and an inert coating conformally deposited on the inside surfaces of the die, pedestal, and connecting tube that are in contact with the fluid media to thereby provide complete isolation of the sensor assembly from the media.

Abstract: A device for measuring the pressure in an infusion tube (12), including a pressure sensor (20) and a housing (14) comprising at least one chamber (16) with one side defined by a deformable membrane (18) contacting the wall of the infusion tube, and containing said sensor. A fluid (24) is provided between the membrane (18) and the sensor (20). The fluid is non-liquid and has a Poisson ratio of at least 0.49 as well as an instantaneous modulus of elasticity of under 10 MPa so that the sensor response curve is linear. The device may be used in an infusion apparatus, particularly a portable infusion apparatus.

Abstract: A media-compatible sensing structure (210) that employs strain-sensing elements (222) formed in or on a silicon chip (212). The sensor (210) generally includes a metal body (214) having a diaphragm (216) and an edge (226) formed by an abrupt change in the thickness of the metal body (214) in a direction normal to the diaphragm (216). The silicon chip (212) is secured directly to the metal diaphragm (216) and has at least one strain-sensing element (222) aligned with the edge (226) of the body (214) in the direction normal to the diaphragm (216), such that movement of the diaphragm (216) induces strain in the silicon chip (212) that is localized at the strain-sensing element (222).