Abstract: A one-dimensional composite structure which comprises at least one nanowire. The nanowire comprises a metal core and a metal oxide sheath.

Abstract: The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed.

Abstract: Implementations and techniques for producing graphene are generally disclosed.

Abstract: In a method of manufacturing a semiconductor device, a plurality of sacrificial layers and a plurality of insulating interlayers are repeatedly and alternately on a substrate. The insulating interlayers include a different material from a material of the sacrificial layers. At least one opening through the insulating interlayers and the sacrificial layers are formed. The at least one opening exposes the substrate. The seed layer is formed on an inner wall of the at least one opening using a first silicon source gas. A polysilicon channel is formed in the at least one opening by growing the seed layer. The sacrificial layers are removed to form a plurality of grooves between the insulating interlayers. A plurality of gate structures is formed in the grooves, respectively.

Abstract: In one embodiment an integrated processing system for manufacturing compound nitride semiconductor devices comprising a metal organic chemical vapor deposition (MOCVD) chamber operable to form a gallium nitride (GaN) layer over one or more substrates with a thermal chemical-vapor-deposition process and to form a multi-quantum well (MQW) layer over the GaN layer, and a halogen containing gas source coupled with the MOCVD chamber operable for flowing a halogen containing gas into the MOCVD chamber to remove at least a portion of unwanted deposition build-up deposited when forming the GaN layer over the one or more substrate from one or more interior surfaces of the MOCVD chamber prior to forming the MQW layer over the GaN layer, wherein the halogen containing gas is selected from the group comprising fluorine, chlorine, bromine, iodine, HI gas, HCl gas, HBr gas, HF gas, NF3, and combinations thereof is provided.

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-like structures on the petal-like structure. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: The application relates to a sensor using a gold layer (3) with embedded nanodiamonds (2) on which surface plasmon resonance (SPR) is used to detect target molecules (5).

Abstract: Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Abstract: A plurality of nanowires is grown on a first substrate in a first direction perpendicular to the first substrate. An insulation layer covering the nanowires is formed on the first substrate to define a nanowire block including the nanowires and the insulation layer. The nanowire block is moved so that each of the nanowires is arranged in a second direction parallel to the first substrate. The insulation layer is partially removed to partially expose the nanowires. A gate line covering the exposed nanowires is formed. Impurities are implanted into portions of the nanowires adjacent to the gate line.

Abstract: A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.

Abstract: Multiple walled nested coaxial nanostructures, methods for making multiple walled nested coaxial nanostructures, and devices incorporating the coaxial nanostructures are disclosed. The coaxial nanostructures include an inner nanostructure, a first outer nanotube disposed around the inner nanostructure, and a first annular channel between the inner nanostructure and the first outer nanotube. The coaxial nanostructures have extremely high aspect ratios, ranging from about 5 to about 1,200, or about 300 to about 1200.

Abstract: The present invention provides OLEDs comprising cross-linked quantum dots and methods for producing and using the same.

Abstract: A composition comprising: at least one porous carbon monolith, such as a carbon aerogel, comprising internal pores, and at least one nanomaterial, such as carbon nanotubes, disposed uniformly throughout the internal pores. The nanomaterial can be disposed in the middle of the monolith. In addition, a method for making a monolithic solid with both high surface area and good bulk electrical conductivity is provided. A porous substrate having a thickness of 100 microns or more and comprising macropores throughout its thickness is prepared. At least one catalyst is deposited inside the porous substrate. Subsequently, chemical vapor deposition is used to uniformly deposit a nanomaterial in the macropores throughout the thickness of the porous substrate. Applications include electrical energy storage, such as batteries and capacitors, and hydrogen storage.

Abstract: An organo-optoelectronic nanowire is fabricated. It is made through a one-step unit operation under a low temperature. An organo-optoelectronic template is obtained for the fabrication, whose idea is a bio-inspired one. The nanowire obtained has a high efficiency and a high surface area; and, heat generated on operation is easily emitted. Thus, the method has great potential for future use on optoelectronic devices.

Abstract: A process and an apparatus for producing a composite material utilize a rotatable hollow body that is inclined with an upstream side being higher than a downstream side. A reaction zone is defined within an elongated chamber in the hollow body. Protrusions inwardly extend from an inner peripheral wall of the hollow body adjacent to the reaction zone. Base material is input into the chamber via a base material introduction port and a carbon source vapor is input into the chamber via a carbon source supply port. A heater heats the reaction zone to a temperature at which carbon nanotubes form on the base material from the carbon source vapor. The protrusions catch base material disposed on the inner peripheral wall of the hollow body when the hollow body rotates and then drop the base material through the reaction zone so that the base material contacts the carbon source vapor.

Abstract: Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: A substrate of the present invention for producing aligned carbon nanotube aggregates on a surface thereof is a substrate for producing aligned carbon nanotube aggregates on a surface thereof, the substrate for producing aligned carbon nanotube aggregates including: a metal base substrate; and carburizing prevention layers formed on both front and back surfaces of the metal base substrate, respectively.

Abstract: A vapor deposition apparatus for a minute-structure includes a surface acoustic wave device 10 that has at least a pair of electrodes 12 and 13 arranged at an interval on a surface of a piezoelectric body 11, a vacuum vapor deposition device 20 that vacuum-deposits at least two substances A and B on a surface of the surface acoustic wave device, and a high-frequency application device 30 that applies a high-frequency voltage between the electrodes of the surface acoustic wave device. In the state where a standing wave of surface acoustic waves is generated on the surface of the surface acoustic wave device by applying the high-frequency voltage, a plurality of thin film layers are formed, and a minute-structure is vapor-deposited at a specific position of the standing wave.

Abstract: A platinum-based nano catalyst supported carbon nano tube electrode and a manufacturing method thereof, more particularly to a manufacturing method of a carbon nano tube electrode and a carbon nano tube electrode supported with the platinum-based catalyst by growing the carbon nano tube on the surface of the carbon paper and using a CVD method on the surface of the carbon nano tube. By growing the carbon nano tube directly, the broad surface area and excellent electric conductivity of the carbon nano tube can be utilized maximally, and especially, the nano catalyst particles with minute sizes on the surface of the carbon nano tube by using the CVD method as a supporting method of the platinum-based catalyst on the surface of the carbon nano tube, the amount of the platinum can be minimized and still shows an efficient catalyst effect and by improving the catalyst activity by increasing the distribution, so academic and industrial application in the future is highly expected.

Abstract: It is proposed to produce a workpiece (10) with a metal-oxide-coated surface (9) with a selectable degree of hydrophobic behaviour, by the surface of a substrate material (1) being provided at least in partial regions with a microstructure (2, 3) by mechanical embossing and subsequently being coated. The microstructuring is followed by depositing a hydrocarbon- or silicon-dioxide-containing protective layer (6) and/or at least one top layer (7), on the surface (9) of which the desired hydrophobic properties occur. The sterilizing and catalytic effect of the metal-oxide-containing top layer (7) is enhanced or produced by incorporation of metal-containing nanoparticles.

Abstract: A method of depositing an electrically conductive titanium oxide coating on a glass substrate, preferably by atmospheric chemical vapor deposition in a float glass manufacturing process, utilizes a precursor gas mixture including a halogenated, inorganic titanium compound, an organic oxygen containing compound, a reducing gas and one or more inert carrier gases.

Abstract: The present disclosure provides devices for neuronal growth and associate methods. In one aspect, for example, a neuronal growth device is provided including a layer of nanodiamond particles having an exposed neuronal growth surface, a doped diamond layer contacting the layer of nanodiamond particles opposite the neuronal growth surface, and a semiconductor layer coupled to the doped diamond layer opposite the layer of nanodiamond particles. In one aspect, the nanodiamond particles are substantially immobilized by the doped diamond layer.

Abstract: The present invention relates to a method for producing carbon nanoparticles from heavy petroleum fractions as the carbon source (precursor), particularly aromatic oil residue (RARO) by chemical vapor deposition (CVD), and optionally by using an organometallic catalyst that is soluble in the precursor. The main feature of the method according to the invention is that the precursor is evaporated in a controlled manner so as to provide a pulse supply of precursor having a constant composition to the inside of a tubular furnace which can be arranged in a vertical position for the continuous production of nanomaterials or in a horizontal position for batch production.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: The invention relates to a method for depositing a diamond coating onto a substrate, said method resulting in the production of a coating characterised by a novel morphology of the diamond in the form of pyramids containing submicronic grains. The method is carried out by chemical vapour deposition by controlling the applied electric field.

Abstract: The present invention is a method for manufacturing a negative electrode material for a secondary battery with a non-aqueous electrolyte comprising at least: coating a surface of powder with carbon at a coating amount of 1 to 40 mass % with respect to an amount of the powder by heat CVD treatment under an organic gas and/or vapor atmosphere at a temperature between 800° C. and 1300° C., the powder being composed of at least one of silicon oxide represented by a general formula of SiOx (x=0.5 to 1.6) and a silicon-silicon oxide composite having a structure that silicon particles having a size of 50 nm or less are dispersed to silicon oxide in an atomic order and/or a crystallite state, the silicon-silicon oxide composite having a Si/O molar ratio of 1/0.5 to 1/1.6; blending lithium hydride and/or lithium aluminum hydride with the powder coated with carbon; and thereafter heating the powder coated with carbon at a temperature between 200° C. and 800° C. to be doped with lithium at a doping amount of 0.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp2 bonds, and accelerating the clusters. A surface of a substrate is irradiated with the clusters. A material is formed on the surface using the carbon from the molecules. The material includes carbon and may optionally include hydrogen. The material may include graphene. The material may form a monolayer. The molecules may include one or more material selected from the group consisting of graphene, carbon allotropes, ethylene, and hydrocarbon molecules containing ethylenic moieties. A fused region may be formed in the substrate as an interface between the substrate and the material. The clusters may have diameters of at least 20 nanometers and may be accelerated to an energy of at least 0.5 keV.

Abstract: According to one embodiment, a method of treating catalyst for nanocarbon production comprises, bringing a surface of a catalytic material into contact with a chemical, the catalytic material containing a metallic material and being used to produce nanocarbon, corroding the surface of the catalytic material, and drying the surface of the catalytic material.

Abstract: Embodiments of the present invention relate to apparatuses and methods for fabricating electrochemical cells. One embodiment of the present invention comprises a single chamber configurable to deposit different materials on a substrate spooled between two reels. In one embodiment, the substrate is moved in the same direction around the reels, with conditions within the chamber periodically changed to result in the continuous build-up of deposited material over time. Another embodiment employs alternating a direction of movement of the substrate around the reels, with conditions in the chamber differing with each change in direction to result in the sequential build-up of deposited material over time. The chamber is equipped with different sources of energy and materials to allow the deposition of the different layers of the electrochemical cell.

Abstract: A layer of high aspect ratio nanoparticles is disposed on a surface of a substrate under the influence of an electrical field applied on the substrate. To create the electrical field, a voltage is applied between a pair of electrodes arranged near the substrate or on the substrate, and the high aspect ratio nanoparticles disposed on the substrate are at least partially aligned along direction(s) of the applied electrical field. The high aspect ratio nanoparticles are grown from catalyst nanoparticles in an aerosol, and the aerosol is directly used for forming the nanoparticle layer on the substrate at room temperature. The nanoparticles may be carbon nanotubes, in particular single wall carbon nanotubes. The substrate with the layer of aligned high aspect ratio nanoparticles disposed thereon can be used for fabricating nanoelectronic devices.

Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Abstract: In an embodiment, a method for manufacturing a thin layer chromatography (“TLC”) plate is disclosed. The method includes forming a layer of elongated nanostructures (e.g., carbon nanotubes), and at least partially coating the elongated nanostructures with a coating. The coating includes a stationary phase and/or precursor of a stationary phase for use in chromatography. The stationary phase may be functionalized with hydroxyl groups by exposure to acidified water vapor or immersion in a concentrated acid bath (e.g., HCl and methanol). At least a portion of the elongated nanostructures may be removed after being coated. Embodiments for TLC plates and related methods are also disclosed.

Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.

Abstract: Carbon nanotube (CNT) arrays can be used as a thermal interface materials (TIMs). Using a phase sensitive transient thermo-reflectance (PSTTR) technique, the thermal conductance of the two interfaces on either side of the CNT arrays can be measured. The physically bonded interface has a conductance ˜105 W/m2-K and is the dominant resistance. Also by bonding CNTs to target surfaces using indium, it can be demonstrated that the conductance can be increased to ˜106 W/m2-K making it attractive as a thermal interface material (TIM).

Abstract: Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Abstract: An apparatus, system, and method are disclosed for a carbon nanotube templated battery electrode. The apparatus includes a substrate, and a plurality of catalyst areas extending upward from the substrate, the plurality of catalyst areas forming a patterned frame. The apparatus also includes a carbon nanotube forest grown on each of the plurality of catalyst areas and extending upward therefrom such that a shape of the patterned frame is maintained, and a coating attached to each carbon nanotube in the carbon nanotube forest, the coating formed of an electrochemically active material. The system includes the apparatus, and a particulate cathode material distributed evenly across the apparatus such that the particulate cathode material fills the passages, a current collector film formed on top of the particulate cathode material, and a porous spacer disposed between the apparatus and the cathode.

Abstract: Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

Abstract: A composition includes a carbon nanotube (CNT)-infused aramid fiber material that includes an aramid fiber material of spoolable dimensions, a barrier coating conformally disposed about the aramid fiber material, and carbon nanotubes (CNTs) infused to the aramid fiber material. The infused CNTs are uniform in length and uniform in density. A continuous CNT infusion process includes:(a) disposing a barrier coating and a carbon nanotube (CNT)-forming catalyst on a surface of an aramid fiber material of spoolable dimensions; and (b) synthesizing carbon nanotubes on the aramid fiber material, thereby forming a carbon nanotube-infused aramid fiber material.

Abstract: A hard water-repellent structure and a method for fabricating the same are provided. The method adopts an atmospheric pressure plasma deposition (APPD) technique to form a hard coating having a rough surface on a substrate, and form a water-repellent coating on the rough surface. Because the hard water-repellent structure includes the hard coating and the water-repellent coating, hardness, abrasion-resistance, transparency and hydrophobicity of the hard water-repellent structure are improved. The hard water-repellent structure protects the substrate from friction. Moreover, because the disclosure adopts the APPD technique to form the hard water-repellent structure, the cost of production is reduced dramatically. Thus, the disclosure can solve drawbacks of prior art.

Abstract: Provided is an apparatus for producing carbon nanotubes, that is provided with a reaction chamber and a dispersion plate. The dispersion plate is provided with a plate and a gas guiding portion provided on an edge of the plate, and a catalyst supply hole is defined in the central portion of the plate, through which metal catalysts are supplied. The gas guiding portion guides source gas to the central portion of the plate and suspends the metal catalysts discharged from the catalyst supply hole in a specific direction. Thus, the apparatus for producing carbon nanotubes can prevent loss of metal catalysts and improve space utilization.

Abstract: The present invention relates to the use of atomic layer deposition (ALD) techniques to enhance the acid catalytic activity of nanoporous materials.

Abstract: The invention relates to a method for production of a surface-structured substrate, comprising the steps: (i) production of a first substrate, nanostructured with inorganic nanoclusters on at least one surface, (ii) application of a substrate material for a second substrate, different from the first material to the nanostructured surface of the first substrate as obtained in step (i) and (iii) separation of the first substrate from the second substrate of step (ii), including the inorganic nanoclusters to give a second substrate nanostructured with the nanoclusters.

Abstract: The invention relates to a chemical reactor with a nanometric superstructure, comprising at least one member wherein at least one reaction chamber is arranged, and said reaction chamber being filled at least partially with a high specific surface area material having a specific surface area greater than 5 m2/g, and characterised in that said high specific surface area material is selected from nanotubes or nanofibres. These nanotubes or nanofibres are preferably selected in the group consisting of carbon nanofibres or nanotubes, ?-SiC nanofibres or nanotubes, TiO2 nanofibres or nanotubes. They may be deposited on an intermediate structure selected in the group consisting of glass fibres, carbon fibres, SiC foams, carbon foams, alveolar ?-SiC foams, said intermediate structure filling the reaction chamber of said reactor at least partially.

Abstract: A method is provided for producing germanium nanowires encapsulated within multi-walled carbon nanotubes. The method includes the steps of performing chemical vapor deposition using a combined germanium and carbon source having a general formula of GeR(4-x)Lx, where x=0, 1, 2, or 3; R is selected from a group consisting of alkyl, cycloalkyl or aryl and L=hydrogen, halide or alkoxide and growing germanium nanowires encapsulated within multi-walled carbon nanotubes on a substrate. A reaction product of that method or process is also provided.

Abstract: Diamond-like carbon (DLC) coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction probes for use in such applications as atomic force microscopy, nanomachining, nanotribology, metrology and nanolithography. The diamond-like carbon coatings include a carbon implantation layer which increases adhesion of a deposited DLC layer to an underlying nanoprobe tip.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: To improve the crystallinity of carbon nanowalls. The method of the invention for producing carbon nanowalls, includes forming carbon nanowalls on a surface of a base in a plasma atmosphere containing hydrogen and a raw material containing at least carbon and fluorine as its constituent elements, oxygen plasma is added to the plasma atmosphere. The hydrogen plasma was generated through injecting, to the plasma generation site, hydrogen radicals generated at a site different from the plasma atmosphere. The raw material is at least one member selected from among C2F6, CF4, and CHF3.