Polishes Patents (Class 106/3)
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Patent number: 6692546Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.Type: GrantFiled: August 17, 2001Date of Patent: February 17, 2004Assignee: Advanced Technology Materials, Inc.Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
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Publication number: 20040025742Abstract: A polishing composition comprising an abrasive, water and an organic acid or a salt thereof, wherein the composition has a specified viscosity of from 1.0 to 2.0 mPa·s at a shearing rate of 1500 s−1 and 25° C.; a roll-off reducing agent comprising a Brönsted acid or a salt thereof, having an action of lowering viscosity so that the amount of viscosity lowered is 0.Type: ApplicationFiled: July 24, 2003Publication date: February 12, 2004Inventors: Hiroaki Kitayama, Shigeo Fujii, Yoshiaki Oshima, Toshiya Hagihara
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Publication number: 20040025444Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises an oxidizing agent, an abrasive, and a Fenton's reagent. The oxidizing agent comprises a per compound, such as periodic acid, a peroxide, or a persulfate. The abrasive comprises a metal oxide, such as colloidal silica, alumina, or spinel. The Fenton's reagent comprises a metal selected from a group consisting of metals in Group 1(b) and Group 8, such as iron, copper and silver. The composition is believed to be effective by virtue of the interaction between the oxidizing agent and the Fenton's reagent that is at least partially linked to the surface of the abrasive. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.Type: ApplicationFiled: March 19, 2003Publication date: February 12, 2004Applicant: EKC Technology, Inc.Inventors: Robert J. Small, Xiaowei C. Shang
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Publication number: 20040020135Abstract: A slurry for polishing copper-based metal containing a silica polishing material, an oxidizing agent, an amino acid, a triazole-based compound and water, wherein a content ratio of amino acid to triazole-based compound (amino acid/triazole-based compound (weight ratio)) is 5 to 8.Type: ApplicationFiled: July 21, 2003Publication date: February 5, 2004Applicants: NEC ELECTRONICS CORPORATION, TOKYO MAGNETIC PRINTING CO., LTDInventors: Yasuaki Tsuchiya, Tomoko Inoue, Shin Sakurai, Kenichi Aoyagi, Tetsuyuki Itakura
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Publication number: 20040020132Abstract: Polishing slurry has abrading particles dispersed in a liquid dispersant. The abrading particles are composite particles each having a first particle and a plurality of second particles smaller than the first particles attached to the surface of the first particle through a metal oxide membrane. The first particles have average diameter of 0.1-20 &mgr;m and the second particles have average diameter of 0.001-0.5 &mgr;m. Elastic particles may be used as the first particles such as polymer particles.Type: ApplicationFiled: July 29, 2003Publication date: February 5, 2004Applicant: Nihon Microcoating Co., Ltd.Inventor: Noriaki Yokoi
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Patent number: 6682575Abstract: The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of about 1 to about 6, and the polishing composition is colloidally stable. The invention also provides a method for polishing a substrate comprising a silicon-based dielectric layer using the polishing composition. The invention further provides a method of stabilizing a silica abrasive in a polishing composition by contacting the abrasive with methanol.Type: GrantFiled: March 5, 2002Date of Patent: January 27, 2004Assignee: Cabot Microelectronics CorporationInventor: Robert Vacassy
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Publication number: 20040010978Abstract: A polishing material is provided in which the dispersibility of the abrasive grains of the polishing material having, as a major component, rare earth oxides including cerium oxide is made better and the hardness of abrasive grain precipitates is reduced, and at the same time high efficiency of polishing can be achieved stably. According to the present invention, in a polishing material having, as the major component, rare earth oxides including cerium oxide, any one of crystalline cellulose, calcium secondary phosphate, a condensate of sodium &bgr;-naphthalenesulphonate and formalin, and synthetic silica is contained as an anti-solidification agent capable of softening abrasive grain precipitates of the polishing material when the abrasive grains of the polishing material are dispersed into a dispersion medium, and sodium hexametaphosphate or pyrophosphate is contained as a dispersant capable of dispersing the abrasive grains of the polishing material into the dispersion medium.Type: ApplicationFiled: March 6, 2003Publication date: January 22, 2004Inventors: Yoshitsugu Uchino, Hidehiko Yamasaki, Shigeru Kuwabara
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Publication number: 20040010979Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.Type: ApplicationFiled: July 15, 2003Publication date: January 22, 2004Applicant: KAO CORPORATIONInventors: Yoshiaki Oshima, Toshiya Hagihara
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Patent number: 6679929Abstract: A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water.Type: GrantFiled: January 16, 2002Date of Patent: January 20, 2004Assignee: Fujimi IncorporatedInventors: Hiroshi Asano, Kenji Sakai, Katsuyoshi Ina
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Patent number: 6679928Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers, (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of a surfactant.Type: GrantFiled: April 12, 2002Date of Patent: January 20, 2004Assignee: Rodel Holdings, Inc.Inventors: Wesley D. Costas, Tirthankar Ghosh, Jinru Bian, Karel-Anne Valentine
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Publication number: 20040006924Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.Type: ApplicationFiled: February 11, 2003Publication date: January 15, 2004Inventors: Brandon Shane Scott, Robert J. Small
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Patent number: 6676719Abstract: A pyrogenic process is used to prepare alkali-doped silica particles. Particles produced by this process exhibit homogeneous doping, reduced agglomeration, greater stability and higher removal rates. Aqueous dispersions containing alkali-doped pyrogenic silica with average particle size less than 100 nm are used for polishing surfaces (CMP).Type: GrantFiled: December 21, 2001Date of Patent: January 13, 2004Assignee: Degussa AGInventors: Wolfgang Lortz, Christoph Batz-Sohn, Helmut Mangold, Gabriele Perlet, Werner Will
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Patent number: 6676733Abstract: Physiologically acceptable and non-corrosive silicone compositions are used for treating surfaces such as glass, porcelain, ceramic, marble, granite, metal, coated metal, plastic, wood, painted wood, cement, leather, textile, cloth, and other hard or soft composite surfaces, to render them water and soil repellent. Volatile organic compound (VOC) free cream, paste, powder and solid compositions are provided by the inclusion of particulate stabilizers in the silicone compositions. Solventless silicone compositions provide numerous advantages with improved water and soil repellency qualities.Type: GrantFiled: August 28, 2001Date of Patent: January 13, 2004Assignee: Resource Development L.L.C.Inventors: Jerome H. Ludwig, Howard G. Ohlhausen
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Patent number: 6676718Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.Type: GrantFiled: December 4, 2001Date of Patent: January 13, 2004Assignee: Rodel Holdings, Inc.Inventors: Qiuliang Luo, Qianqiu Ye, Kelly H. Block
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Patent number: 6669748Abstract: The present invention provides a dispersion liquid of silica particles for polishing with a low content of Na ions and also with a content of ions other than Na ions in a prespecified range. This dispersion liquid is a dispersion liquid of silica particles in which the silica particles having the average particle diameter in the range from 5 to 300 nm is dispersed, and a content of Na ions in the silica particle is less than 100 ppm, while a contents of ions other than Na ions is in the range from 300 ppm to 2 weight %.Type: GrantFiled: September 26, 2002Date of Patent: December 30, 2003Assignee: Catalysts & Chemicals Industries Co., Ltd.Inventors: Hiroyasu Nishida, Yoshinori Wakamiya, Manabu Watanabe, Michio Komatsu
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Patent number: 6663683Abstract: An aqueous dispersion containing a cerium oxide-doped, pyrogenically produced silicon dioxide, wherein the cerium oxide is introduced through an aerosol of a cerium salt solution or suspension and the average particle size in the dispersion is less than 100 nm. The dispersion is produced by dispersing the cerium oxide-doped, pyrogenically produced silicon dioxide in aqueous solution by means of a high energy input. The aqueous dispersion can be used for chemical-mechanical polishing.Type: GrantFiled: November 1, 2001Date of Patent: December 16, 2003Assignee: Degussa AGInventors: Wolfgang Lortz, Christoph Batz-Sohn, Gabriele Perlet, Werner Will
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Publication number: 20030226378Abstract: Slurries to be supplied to the surface of a rotating glass substrate for texturing the surface to create streaks contain aggregates having diameters not larger than 0.51 &mgr;m of polycrystalline diamond particles that are dispersed in water or a water-based aqueous solution that is free of any substance having an etching effect on a glass material. A glass substrate is textured by supplying such a slurry material on its surface as the substrate is rotated and a polishing tape is pressed and run against the substrate surface.Type: ApplicationFiled: February 11, 2003Publication date: December 11, 2003Applicant: Nihon Microcoating Co., Ltd.Inventors: Hiromitsu Okuyama, Tatsuya Tanifuji, Yoshihiro Tawara
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Patent number: 6660828Abstract: The polymer of the present invention is derived from cyclic ether monomers, dioxane, dioxalane or trioxane and contains both pendant Rf fluoro groups as well as polar groups. These polymers have good wetting, or flow, or leveling properties. They can be reacted with other monomers, such as in the preparation of polyesters, and can be used in waxes, polishes and coatings.Type: GrantFiled: May 14, 2001Date of Patent: December 9, 2003Assignee: Omnova Solutions Inc.Inventors: Richard R. Thomas, Robert E. Medsker, Charles M. Kausch, Daniel D. Woodland, Gary L. Jialanella, Raymond J. Weinert, Jane E. Leising, James E. Robbins, Brian T. Cartwright
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Patent number: 6656022Abstract: A polishing slurry prepared by dispersing in a dispersion medium, abrasive grains comprised of a material having a solubility in the dispersion medium at 25° C., of 0.001 g/100 g or higher is used to effectively remove any abrasive grains standing adherent to the surfaces of objects to be polished or the interiors of polishing apparatus after polishing.Type: GrantFiled: August 29, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Katsuhiro Ota, Akio Saito
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Patent number: 6656241Abstract: This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.Type: GrantFiled: June 14, 2001Date of Patent: December 2, 2003Assignee: PPG Industries Ohio, Inc.Inventors: Stuart D. Hellring, Colin P. McCann, Charles F. Kahle, Yuzhuo Li, Jason Keleher
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Publication number: 20030219982Abstract: A polishing liquid for metal containing a metal-oxidizing agent, an oxidized metal dissolving agent, a protective film forming agent, a water-soluble polymer and water, the polishing liquid being used for producing a wiring pattern having a metal-embedded wiring portion of 10 to 100 &mgr;m width and an insulating portion of 10 to 100 &mgr;m width in which pattern the wiring portion is arranged at a wiring density of 40 to 60%, the polishing liquid for metal being comprising in that, when a surface to be polished of a metal film embedded in the wiring portion and a surface to be polished of an insulating film formed at both side portions of the metal film is polished substantially flush, wherein (width of the metal-embedded wiring portion)/(magnitude of dishing (depth)) is no less than 103.Type: ApplicationFiled: May 23, 2002Publication date: November 27, 2003Applicant: HITACHI CHEMICAL CO., LTDInventors: Yasushi Kurata, Yasuo Kamigata, Takeshi Uchida, Hiroki Terazaki, Akiko Igarashi
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Publication number: 20030217518Abstract: An abrasive includes abrasive grains, a solvent, and an additive. MnO2, Mn2O3, Mn3O4, MnO or a mixture thereof as the abrasive grains, H2O2 as the solvent, and HNO3, an organic acid, H2O2, etc., as the additive are employed. The abrasive is solidified with cooling, etc. The abrasive and the additive can be supplied to a polishing apparatus through separate routes.Type: ApplicationFiled: May 19, 2003Publication date: November 27, 2003Applicant: FUJITSU LIMITEDInventor: Sadahiro Kishii
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Patent number: 6652632Abstract: A furniture polish comprising a mineral oil, a silicone polish, and a bittering agent may be prepared. Such a composition may be made suitable for dispensing as a spray or mist by means of a non-pressurized spray apparatus by the addition thereto of a shear-thinning thixotropic thickener.Type: GrantFiled: October 22, 2001Date of Patent: November 25, 2003Assignee: S. C. Johnson & Son, Inc.Inventors: Timothy I. Moodycliffe, Lynn M. Werkowski
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Patent number: 6652612Abstract: Silica particles for polishing have a three-dimensional polycondensation structure with an average particle diameter in a range from 5 to 300 nm. The silica particles have residual alkoxy groups therein and a carbon content in a range from 0.5 to 5 weight % retained in the residual alkoxy groups.Type: GrantFiled: November 12, 2002Date of Patent: November 25, 2003Assignee: Catalysts & Chemicals Industries Co., Ltd.Inventors: Kazuhiro Nakayama, Akira Nakashima, Michio Komatsu
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Patent number: 6648933Abstract: Powder composition and method for polishing stone. The present invention relates to a powder composition and to a method for polishing stone, in particular granite, said method making use of said powder composition.Type: GrantFiled: May 10, 2002Date of Patent: November 18, 2003Inventors: Wing Thye Lum, Whee Huat Tan
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Patent number: 6645265Abstract: Powders of particles comprising a ceramic core and a coating of ceria deposited thereon provide an economical and effective abrasive for glass polishing formulations.Type: GrantFiled: July 19, 2002Date of Patent: November 11, 2003Assignee: Saint-Gobain Ceramics and Plastics, Inc.Inventor: Yuhu Wang
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Patent number: 6645051Abstract: A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether and a polyoxyethylene polyoxypropylene copolymer, (c) at least one compound selected from the group consisting of nitric acid, nitrous acid, sulfuric acid, hydrochloric acid, molybdic acid, sulfamic acid, glycine, glyceric acid, mandelic acid, malonic acid, ascorbic acid, glutamic acid, glyoxylic acid, malic acid, glycolic acid, lactic acid, gluconic acid, succinic acid, tartaric acid, maleic acid and citric acid, and their salts, and (d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and silicon carbide.Type: GrantFiled: November 7, 2001Date of Patent: November 11, 2003Assignee: Fujimi IncorporatedInventors: Hiroyasu Sugiyama, Tomoaki Ishibashi, Toshiyuki Takahashi
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Patent number: 6641631Abstract: An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the ions at said pH.Type: GrantFiled: February 6, 2002Date of Patent: November 4, 2003Assignee: Rodel Holdings, Inc.Inventors: Terence M. Thomas, Craig D. Lack, Steven P. Goehringer
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Patent number: 6641632Abstract: Slurry compositions comprising abrasive particles and solid lubricant particles are useful for planarizing surfaces, and preventing delamination and scratches.Type: GrantFiled: November 18, 2002Date of Patent: November 4, 2003Assignee: International Business Machines CorporationInventor: Maria Ronay
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Patent number: 6641630Abstract: The invention provides a chemical-mechanical polishing system, and a method of polishing using the system, comprising (a) an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) iodine, (c) an iodine vapor-trapping agent, and (d) a liquid carrier.Type: GrantFiled: June 6, 2002Date of Patent: November 4, 2003Assignee: Cabot Microelectronics Corp.Inventor: Tao Sun
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Publication number: 20030200702Abstract: A bimodal slurry system for a chemical mechanical polishing process including a dispersion comprising a plurality of first particles and a plurality of at least one type of second particles said first particles having a mean particle diameter larger by at least a factor of 3 than a mean particle diameter of the at least one type of second particles said first particles further being compressible.Type: ApplicationFiled: April 25, 2002Publication date: October 30, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shen-Nan Lee, Tsu Shih, Syun Ming Jang
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Patent number: 6638327Abstract: A method for repairing and lustering defects on a hydrophilic coat surface is reported. The method comprises the steps of applying a buffing composition on a hydrophilic coat surface; and buffing the hydrophilic coat surface to which the buffing composition has been applied. The buffing composition is an aqueous composition which comprises water and a water-soluble high-boiling-point liquid organic compound, and further comprises either a combination of abrasive particles and a dispersant, or lustering agent, or the both. The method allows for the removal of defects on a hydrophilic coat surface with good finish after repairing and without deteriorizing the antifouling function of the hydrophilic coat against urban fouling substances.Type: GrantFiled: August 13, 2002Date of Patent: October 28, 2003Assignee: 3M Innovative Properties CompanyInventor: Fujio Hara
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Patent number: 6638326Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.Type: GrantFiled: September 25, 2001Date of Patent: October 28, 2003Assignee: EKC Technology, Inc.Inventors: Robert J. Small, Maria Peterson, Tuan Truong, Melvin Keith Carter, Lily Yao
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Patent number: 6638328Abstract: A bimodal slurry system for a chemical mechanical polishing process including a dispersion comprising a plurality of first particles and a plurality of at least one type of second particles said first particles having a mean particle diameter larger by at least a factor of 3 than a mean particle diameter of the at least one type of second particles said first particles further being compressible.Type: GrantFiled: April 25, 2002Date of Patent: October 28, 2003Assignee: Taiwan Semiconductor Manufacturing Co. LtdInventors: Shen-Nan Lee, Tsu Shih, Syun Ming Jang
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Publication number: 20030196386Abstract: The invention provides an aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices.Type: ApplicationFiled: April 14, 2003Publication date: October 23, 2003Applicant: JSR CORPORATIONInventors: Masayuki Hattori, Michiaki Ando, Kazuo Nishimoto, Nobuo Kawahashi
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Publication number: 20030194879Abstract: A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4.Type: ApplicationFiled: January 25, 2002Publication date: October 16, 2003Inventors: Robert J. Small, Zhefei J. Chen
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Patent number: 6632259Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.Type: GrantFiled: May 18, 2001Date of Patent: October 14, 2003Assignee: Rodel Holdings, Inc.Inventors: Barry Weinstein, Tirthankar Ghosh
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Publication number: 20030182868Abstract: A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. This problem is solved by adding poly ammonium acrylates having different degrees of neutralization to one another as surfactants to a cerium oxide slurry containing cerium oxide particles, and suitably adjusting the total amount of polyacrylates added.Type: ApplicationFiled: March 12, 2003Publication date: October 2, 2003Inventors: Haruki Nojo, Akitoshi Yoshida, Pascal Berar
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Patent number: 6626968Abstract: A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.Type: GrantFiled: May 21, 2001Date of Patent: September 30, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Young-rae Park, Jung-yup Kim, Bo-un Yoon, Kwang-bok Kim, Jae-phil Boo, Jong-won Lee, Sang-rok Hah, Kyung-hyun Kim, Chang-ki Hong
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Patent number: 6626967Abstract: A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water; wherein the concentration of each of the elements included in Groups 2A, 3A, 4A, 5A, 6A, 7A, 8A, 1B and 2B, lanthanoid and actinoid, and the concentration of each element of aluminum, gallium, indium, thallium, tin, lead, bismuth, fluorine and chlorine, are at most 100 ppb in the polishing composition, respectively.Type: GrantFiled: October 30, 2002Date of Patent: September 30, 2003Assignee: Fujimi IncorporatedInventors: Shinichiro Takami, Katsuyoshi Ina
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Patent number: 6623355Abstract: Methods and apparatus for chemical mechanical planarization of an article such as a semiconductor wafer use polishing slurries including a carbon dioxide solvent or a carbon dioxide-philic composition. A carbon dioxide cleaning solvent step and apparatus may also be employed.Type: GrantFiled: March 23, 2001Date of Patent: September 23, 2003Assignee: MiCell Technologies, Inc.Inventors: James B. McClain, Joseph M. DeSimone
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Patent number: 6620037Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.Type: GrantFiled: May 14, 2002Date of Patent: September 16, 2003Assignee: Cabot Microelectronics CorporationInventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Slumin Wang
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Patent number: 6620216Abstract: A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.Type: GrantFiled: August 15, 2002Date of Patent: September 16, 2003Assignee: Kao CorporationInventors: Yoshiaki Oshima, Toshiya Hagihara
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Patent number: 6620215Abstract: The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an aqueous slurry comprising abrasive particles comprising an organic resin, wherein the slurry is held at a pH in the range of 2-12. An attractive feature of the inventive abrasive composition is that it can be tailored to selectively remove different components from the surface. The inventive abrasive composition also provides efficient polishing rates and good surface quality when used in CMP applications.Type: GrantFiled: December 21, 2001Date of Patent: September 16, 2003Assignee: Dynea Canada, Ltd.Inventors: Yuzhuo Li, Guomin Bian, Kwok Tang, Joe Zunzi Zhao, John Westbrook, Yong Lin, Leina Chan
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Publication number: 20030168628Abstract: The invention provides a polishing composition comprising (a) a silica abrasive, (b) methanol, and (c) a liquid carrier, wherein the polishing composition has a pH of about 1 to about 6, and the polishing composition is colloidally stable. The invention also provides a method for polishing a substrate comprising a silicon-based dielectric layer using the polishing composition. The invention further provides a method of stabilizing a silica abrasive in a polishing composition by contacting the abrasive with methanol.Type: ApplicationFiled: March 5, 2002Publication date: September 11, 2003Applicant: Cabot Microelectronics CorporationInventor: Robert Vacassy
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Publication number: 20030167963Abstract: This invention relates to a furniture polish comprising a paraffin wax and a microcrystalline wax, preferably in combination wit beeswax and a silicon oil. An organic solvent and water are present, and there may additionally be a surfactant and, in aerosol can applications, a propellant. The polish gives good gloss without tendency to smearing and good resistance to water damage.Type: ApplicationFiled: May 6, 2003Publication date: September 11, 2003Inventors: David Bedford, Jean Anne Braithwaite
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Patent number: 6616717Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.Type: GrantFiled: May 16, 2001Date of Patent: September 9, 2003Assignee: Rodel Holdings, Inc.Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
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Patent number: 6616718Abstract: A two-part reagent method for polishing an inorganic silicate substrate is provided. The method comprises: providing a silicate substrate; providing a reagent comprising: a first part consisting essentially of an aqueous solution of at least one metal oxide abrasive selected from the group consisting of titania, zirconia, germania, and germania-doped silica; and a second part consisting essentially of an alkali aqueous solution of colloidal silica having a buffered pH value of at least about 10; polishing a surface of said substrate with the metal oxide abrasive aqueous solution to a surface roughness (Ra) ranging from about 6 Å to about 10 Å; and further polishing the surface with said alkali aqueous solution of colloidal silica to a roughness of less than or equal to about 5 Å.Type: GrantFiled: September 24, 2001Date of Patent: September 9, 2003Assignee: Corning IncorporatedInventors: Charles M. Darcangelo, Robert Sabia, Harrie J. Stevens
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Publication number: 20030162398Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a catalyst. The catalyst comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the catalyst coated on the surface of the abrasive particles and the oxidizing agent, at the catalyst surface. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.Type: ApplicationFiled: February 11, 2002Publication date: August 28, 2003Inventors: Robert J. Small, Brandon S. Scott
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Patent number: 6610114Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.Type: GrantFiled: June 14, 2001Date of Patent: August 26, 2003Assignee: Honeywell International Inc.Inventors: Dan Towery, Neil Hendricks, Paul Schilling, Tian-An Chen