Abstract: Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.

Abstract: The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat.

Abstract: This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

Abstract: A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800?T1<(Tm1?550)??(3) (wherein Tm1 (units: ° C.) represents the melting point of the single crystal).

Abstract: The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P. With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range.

Abstract: A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed.

Abstract: A Bi1-xSbx thin film is provided that includes a Dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.

Abstract: A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.

Abstract: A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.

Abstract: In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

Abstract: The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.

Abstract: A melting furnace, mounted adjacent a growth furnace, comprises a receiving container for melting therein raw material in a particle or powder form falling in it from a feeder. The receiving container accommodates a set of slope-wise plates providing a distributed sliding of partially melted raw material particles over the surface of these plates and their complete melting while moving downward; eventually the melted raw material flows into the crucible of the growth furnace through a conveying tube extending slantingly from the bottom of the receiving container to the crucible through coaxial openings in housings of both furnaces. The rate of feeding is given solely by the feeder, and at continuous feeding the raw material flows continuously by gravity from the feeder to the crucible of the growth furnace, first in a solid state (powder, granules, pellets, etc.) and then in a liquid state.

Abstract: An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity. Additionally or alternatively, the arrangement may comprise a device for generating magnetic migration fields, both the filling material having the anisotropic heat conductivity and the device for generating magnetic migration fields being suited to compensate or prevent the formation of asymmetric phase interfaces upon freezing of the raw melt.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.

Abstract: The present invention consists of a method for imparting asymmetry to a truncated annular wafer by either rounding one corner of the orientation flat, or rounding one corner of a notch. This novel method of rounding corners impart a visual and/or tactile asymmetry which can be utilized by a person in order to differentiate between the two different sides of the wafer. This inventive wafer design and method for making an asymmetric wafer is especially useful in the field of semiconductor technology and may be used on sapphire crystal wafers or any other class of wafer.

Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

Abstract: The method and apparatus includes a vessel having a bottom and sidewalls arranged to house the material in a molten state. A temperature controlled horizontally oriented, cooling plate is movable into and out of the top of the molten material. When the cooling plate is lowered into the top of the melt, an ingot of solid silicon is solidified downwards.

Abstract: In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of a pulling-up speed at the time of manufacturing a monocrystal by use of a monocrystal pulling-up device, an evaporation speed formula for calculating an evaporation speed of the dopant is derived. At a predetermined timing during pulling-up, gas flow volume and inner pressure in a chamber are controlled such that a cumulative evaporation amount of the dopant, calculated based on the evaporation speed formula, becomes a predetermined amount. A difference between a resistivity profile of the monocrystal predicted based on the evaporation speed formula and an actual resistivity profile is made small. Since no volatile dopant is subsequently added, increase in workload on an operator, increase of manufacturing time, an increase in amorphous adhering to the inside of the chamber, and an increase in workload at the time of cleaning the inside of the chamber can be prevented.

Abstract: The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.

Abstract: The present invention relates to an apparatus and method for purifying silicon using directional solidification. The apparatus can be used more than once for the directional solidification of silicon without failure. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.

Abstract: A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

Abstract: The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring.

Abstract: In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: The present invention provides a method of crystallizing Yb:C-FAP [Yb3+:Ca5(PO4)3F], by dissolving the Yb:C-FAP in an acidic solution, following by neutralizing the solution. The present invention also provides a method of forming crystalline Yb:C-FAP by dissolving the component ingredients in an acidic solution, followed by forming a supersaturated solution.

Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa??Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0?a<2.

Abstract: A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails.

Abstract: A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.

Abstract: When a silicon single crystal is grown by the CZ method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible, the voltage is applied under the condition that the crystal suspending member is set as a negative electrode while the crucible is set as a positive electrode in a process for growing a lower end portion of a cylindrical portion or a tail portion which is of a non-convertible portion of the silicon single crystal. A sample wafer is collected from the lower end portion of the cylindrical portion or the tail portion, which is grown in association with the voltage application, and the metal contamination of the sample wafer is evaluated. The sample wafer has enough metal impurity concentration to evaluate the metal contamination.

Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

Abstract: Silicon single crystals are prepared from molten granules, by producing a first volume of molten silicon between a growing single crystal and the lower end of a silicon conical tube which is closed at its lower end, and encloses a central opening of a rotating silicon plate below which the tube extends, by means of a first induction heating coil arranged below the plate; producing a second volume of molten silicon by a second induction heating coil arranged above the plate; melting the lower end of the tube to form a passage for the second volume of molten silicon, the passage produced at a point in time when the second volume is not yet present or is less than double the volume of the first volume; and crystallizing monocrystalline silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.

Abstract: This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.

Abstract: The present disclosure describes a method and an apparatus for making nanomaterials. In particular, the present innovation provides an apparatus that can be used to produce nanocrystals and/or nanorods of noble metals. The disclosure also provides methods that can be advantageously used to produce gold nanocrystals/nanorods with aspect ratios higher than 4.0.

Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of seed crystals. The apparatus and methods are scalable up to very large volumes and are cost effective.

Abstract: A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.

Abstract: An oxide single crystal having a composition represented by RExSi6O1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation coincides with the c-axis direction. The solidification rate (the weight of the grown crystal÷the weight of the charged raw material) in the crystal growth is less than 45%.

Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.

Abstract: Provided is a method for reliably and easily measuring a liquid level by selecting an optimal reflection method from among a plurality of reflection methods, depending on growing conditions of a pulled single crystal. The method comprises: setting a plurality of measuring methods having different ways of determining the liquid level; creating, in advance, information that associates with a gap between the outer peripheral face of the single crystal and a predetermined position located between a heat shield and the outer peripheral face of the single crystal; determining the gap in accordance with manufacturing conditions; selecting a measuring method associated to the determined gap, on the basis of the information; and measuring the liquid level of a melt surface in use of the selected measuring method.

Abstract: A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

Abstract: The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

Abstract: A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

Abstract: A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of pulling the single crystal having a large diameter, in manufacture of the single crystal.

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract: The present disclosure provides a method to allow a user to pre-screen numerous crystallization conditions in the crystallization space to identify those conditions with the highest probability of yielding crystals and high quality diffracting crystals. In one embodiment, the dilute solution thermodynamic virial coefficient, termed B, is used to aid in the determination crystallization conditions that increase the probability of producing crystals for the crystallant of interest. The present disclosure also provide methods for predicting solution conditions that generate beneficial solubility and/or stability conditions for a polypeptide of interest using the B parameter. Devices for use in the described methods are also described.