Abstract: A resist composition comprising a base polymer and a quencher in the form of an ammonium salt compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: A composition for forming a resist underlayer film for lithography, the resist underlayer film for lithography containing silicon and being dissolved and removed with an alkaline developer in accordance with a resist pattern together with an upper layer resist during development of the upper layer resist, the composition comprising a component, which is a silane compound containing a hydrolyzable silane, a hydrolysate of the silane, a hydrolytic condensate of the silane, or any combination of these, and an element, which is an element of causing dissolution in an alkaline developer. The element, which is an element of causing dissolution in an alkaline developer, is contained in the structure of the compound as the component. The element, which is an element of causing dissolution in an alkaline developer, is a photoacid generator.

Abstract: A resist composition including a resin component which exhibits changed solubility in a developing solution under action of acid, the resin component including a structural unit represented by general formula (a0) shown below in which Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group which may have a substituent; Ya0 represents a carbon atom; Xa0 represents a group which forms a cyclic hydrocarbon group together with Ya0; Ra00 represents a hydrocarbon group which may have a substituent; provided that at least one of Xa0 and Ra00 has a carbon atom constituting a carbon-carbon unsaturated bond at an ?-position of Ya0.

Abstract: In a method for generating an elongated nucleic acid molecule, a nucleic acid addition of a first nucleic acid molecule attached to a first 3? or 5? protecting group to a nucleic acid immobilized on a surface produces an intermediate-length immobilized nucleic acid. The first protecting group is dissociated from the first nucleic acid molecule. A second nucleic acid molecule that is attached to a second associated a 3? or 5? associated protecting group is added to the intermediate-length nucleic acid. The second associated protecting group is dissociated from the second nucleic acid molecule. A sequentially-extended elongated immobilized nucleic acid molecule having a desired sequence and length is produced by sequentially extending the intermediate-length immobilized nucleic acid by adding additional nucleic acid molecules with associated protecting groups to the intermediate-length nucleic acid and dissociating the associated protecting group after each addition.

Abstract: A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.

Abstract: The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A negative resist composition comprising an onium salt of arenesulfonic acid having a bridged ring-containing group and a base polymer is provided, the onium salt being capable of generating a bulky acid having an appropriate strength and controlled diffusion. When the resist composition is processed by lithography, a dot pattern of rectangular profile having high resolution and reduced LER is formed.

Abstract: A photosensitive resin composition comprising the following component (a), component (b1), and component (b2). (a) a polyimide precursor having a structural unit represented by the following formula (1); (b1) one or more compounds selected from the group consisting of a compound represented by the following formula (11) and a compound represented by the following formula (12); (b2) one or more compounds selected from the group consisting of a compound represented by the following formula (21) and a compound represented by the following formula (22).

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a photopolymerizable compound containing a double bond and a specific photopolymerization initiator, wherein the photopolymerizable compound containing a double bond suppresses the photopolymerization reaction upon exposure to light but causes the photopolymerization reaction at the time of photobleaching after development, thereby controlling the flowability of the composition during thermal curing. Thus, a pattern is readily formed, which makes it possible to maintain excellent sensitivity upon the development and even upon the hard-bake process after the development, and it is possible to provide a cured film that is excellent in film strength and film retention rate.

Abstract: [Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Abstract: A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rx1 to Rx4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ry1 to Ry2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rz1 to Rz4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx1 to Rx4, Ry1 to Ry2 and Rz1 to Rz4 has an anion group, M1m+ represents a sulfonium cation having a sulfonyl group, R001 to R003 each independently represent a monovalent organic group; provided that at least one of R001 to R003 is an organic group having an acid dissociable group; and M3m+ represents an m-valent organic cation having an electron-withdrawing group.

Abstract: Compositions and methods for coated or uncoated particulates, such as proppants, are provided that can, among other things, provide a hydrophobic surface that can enhance well productivity and other compositions and methods are disclosed.

Abstract: Formation of a multi-colored image in thermochromic material involves controlling operation of first, second, and third heat sources. The first heat source heats pixels of the thermochromic material to activate the pixels. The second and third heat sources are selectively controlled to heat different sets of pixels using neither, one, or both of the second and third heat sources.

Abstract: Disclosed are a polymer including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, an organic layer composition including the polymer, and a method of forming patterns using the organic layer composition. The Chemical Formulae 1 and 2 are the same as defined in the specification.

Abstract: A method for fabricating a magnetic material stack on a substrate, comprises forming a first dielectric layer, forming a first magnetic material layer on the first dielectric layer, forming at least a second dielectric layer on the first magnetic material layer and forming at least a second magnetic material layer on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed.

Abstract: A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a ? ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10?28 m3.

Abstract: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Va1 is a divalent hydrocarbon group, na1 represents an integer of 0 to 2, Ya0 is a carbon atom, Xa0 is a group forming a monocyclic aliphatic hydrocarbon group together with Ya0, and Ra00 is an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group, Yb1 represents a divalent linking group containing an ester bond, Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, and Mm+ is an m-valent organic cation.

Abstract: A chemically amplified resist composition comprising a quencher containing an ammonium salt of an iodized or brominated aromatic ring-bearing carboxylic acid, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1): The unit structure of formula (1) is a unit structure of the formula (2): A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

Abstract: Techniques herein include methods of forming conformal films on substrates including semiconductor wafers. Conventional film forming techniques can be slow and expensive. Methods herein include depositing a self-assembled monolayer (SAM) film over the substrate. The SAM film can include an acid generator configured to generate acid in response to a predetermined stimulus. A polymer film is deposited over the SAM film. The polymer film is soluble to a predetermined developer and configured to change solubility in response to exposure to the acid. The acid generator is stimulated and generates acid. The acid is diffused into the polymer film. The polymer film is developed with the predetermined developer to remove portions of the polymer film that are not protected from the predetermined developer. These process steps can be repeated a desired number of times to grow an aggregate film layer by layer.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

Abstract: A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx1 to Rx4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx1 to Rx4 may be mutually bonded to form a ring structure; Ry1 and Ry2 represents a hydrogen atom or a hydrocarbon group, or Ry1 and Ry2 may be mutually bonded to form a ring structure; Rz1 to Rz4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz1 to Rz4 may be mutually bonded to form a ring structure; provided that at least one of Rx1 to Rx4, Ry1, Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an m-valent organic cation).

Abstract: To provide an inkjet printing apparatus that improves the smoothness of an ink surface and improves image quality. Provided is an inkjet printing apparatus for printing a UV curable ink onto a print medium. The inkjet printing apparatus including: an ejection unit configured to eject the UV curable ink; and a UV light source configured to irradiate, with ultraviolet light, the UV curable ink landed on the print medium, the print medium being formed from vinyl chloride. The inkjet printing apparatus further includes a heating unit configured to heat the print medium. The heating unit either heats the print medium to a temperature at which a solvent contained in the UV curable ink landed on the print medium does not volatilize or heats the print medium in a state in which the UV curable ink that lands on the print medium contains substantially no solvent.

Abstract: The present invention provides methods and compositions for labeling and/or targeting cells with increased calcium by providing a CREB reporter system. In addition, methods of treating disorders with activated cells such as brain disorders or cancer are also provided herein.

Abstract: A composition includes: a near infrared absorbing compound A that includes a ?-conjugated plane having a monocyclic or fused aromatic ring; and a solvent B, in which the solvent B includes a solvent B1 in which a solubility parameter is in a range between 19.9 MPa0.5 or higher and 22.3 MPa0.5 or lower and a solvent B2 in which a solubility parameter is lower than 19.9 MPa0.5 or higher than 22.3 MPa0.5, and a content of the solvent B2 in the solvent B is 9 mass % or lower.

Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.

Abstract: [Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Abstract: A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

Abstract: A photosensitive resin composition and a photosensitive resin printing plate precursor which allow development that uses a solution containing a lower alcohol and which are excellent in abrasion resistance and excellent in the ink wiping characteristics of a plate surface exhibited when the plate surface is squeegeed with a blade of a pad printer are provided. The photosensitive resin composition is characterized by containing (A) an inorganic fine particle whose average particle diameter is greater than or equal to 0.5 ?m and less than or equal to 4 ?m and whose sphericity is greater than or equal to 0.9, (B) a polyamide having in its molecular main chain an aliphatic ring and/or a skeleton represented by general formula (1), (C) a compound having an ethylenic double bond, and (D) a photopolymerization initiating agent.

Abstract: A chemically amplified positive-type photosensitive resin composition which is highly sensitive and in which it is easy to form a resist pattern whose cross-sectional shape is rectangular, a photosensitive dry film which includes a photosensitive resin layer formed from the composition, a method of manufacturing the photosensitive dry film, a method of manufacturing a patterned resist film using the composition, a method of manufacturing a substrate with a template using the composition and a method of manufacturing a plated article using the substrate with the template. A Lewis acid compound is included in the composition that also includes an acid generator which generates an acid by application of an active ray or radiation, and a resin whose solubility in alkali is increased by action of an acid.

Abstract: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

Abstract: An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

Abstract: A 3D printing apparatus with a radiation source, a workbench, and a liquid tank, wherein a workbench for supporting a three-dimensional object being constructed, and a liquid tank for containing a polymerizable liquid for constructing a three-dimensional object. The apparatus also includes a cover plate which is located in the liquid tank or on the top of the liquid tank; the radiation source irradiates from above the cover plate. The cover plate is an element transparent to the radiation source; and the lower surface of the cover plate is a covering surface which remains in contact with the polymerizable liquid during the printing process.

Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

Abstract: The present disclosure provides an embodiment of a method for lithography patterning. The method includes coating a photoresist layer over a substrate, wherein the photoresist layer includes a first polymer, and a first photo-acid generator (PAG), and a chemical additive mixed in a solvent; performing an exposing process to the photoresist layer; and performing a developing process to the photoresist layer to form a patterned photoresist layer. The chemical additive has a non-uniform distribution in the photoresist layer.

Abstract: In a three-dimensional printing method example, a polymeric or polymeric composite build material is applied. A fusing agent is applied on at least a portion of the build material. The fusing agent includes an aqueous or non-aqueous vehicle and a plasmonic resonance absorber having absorption at wavelengths ranging from 800 nm to 4000 nm and having transparency at wavelengths ranging from 400 nm to 780 nm dispersed in the aqueous or non-aqueous vehicle. The build material is exposed to electromagnetic radiation, thereby fusing the portion of the build material in contact with the fusing agent to form a layer.

Abstract: Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A resist coating apparatus including a resist supplying system; a resist filtering system having a first filter, a second filter, and a pump between the first filter and the second filter; and a resist dispensing system, wherein the first filter includes a plurality of first unit filters connected in parallel.

Abstract: An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method. The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25° C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.

Abstract: A radiation-sensitive composition is to be used in exposure with an extreme ultraviolet ray or an electron beam, and includes a first polymer and a solvent, wherein the first polymer includes a first structural unit including: at least one metal atom; and at least one carbon atom that each bonds to the metal atom by a chemical bond and does not constitute an unsaturated bond, and at least one chemical bond is a covalent bond. Every chemical bond is preferably a covalent bond. The metal atom is preferably tin, germanium, lead or a combination thereof.

Abstract: [Problem] To provide a high heat resistance resist composition and a pattern formation method using the composition. [Solution] The present invention provides a chemically amplified negative-type resist composition comprising a particular polymer and a particular crosslinking agent, and this composition makes it possible to form a resist pattern of high sensitivity, of excellent resolution and of strong heat-resistance.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: A resist composition containing a polymer compound which has a constitutional unit (a0) represented by Formula (a0-1); and an acid generator which is formed of a compound represented by Formula (b1) (in the formulae, Ra00 represents an acid dissociable group represented by Formula (a0-r1-1); Ra01, Ra02, Ra031, Ra032, and Ra033 represent a hydrocarbon group; Ya0 represents a quaternary carbon atom; Rb1 represents a hydrocarbon group which has a steroid skeleton containing at least one hydroxyl group; Yb1 represents a divalent linking group having a single bond or a hetero atom; Vb1 represents a single bond, an alkylene group, or a fluorinated alkylene group; and Rf1 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group).

Abstract: The present invention relates to an optical element including a base material, a light-shielding film, and a cured film in which an alkyd resin and a melamine resin having two or more iminomethylol groups in a molecule are condensed or in which an alkyd resin and a benzoguanamine resin having two or more iminomethylol groups in a molecule are condensed. The light-shielding film is disposed in at least a part of the periphery of the base material. The cured film is disposed on the surface of the light-shielding film.

Abstract: A black matrix composition, a liquid crystal display panel and a manufacturing method thereof are provided. The black matrix composition is used to form a black matrix layer, and components and percentages by weight of the black matrix composition are: an inorganic filler, and 5% to 10%; an alkali-soluble oligomer, and 5% to 10%; a crosslinking agent, and 5% to 10%; a photopolymerization initiator, and 1%; a thermochromic agent, and 1% to 10%; and a solvent, and 60% to 85%. When the temperature of the black matrix layer is less than 50° C., the black matrix layer is black. When the temperature of the black matrix layer is higher than or equal to 60° C., the black matrix layer is completely transparent.

Abstract: A glass article comprising a glass substrate and a coating on a surface of the glass substrate is disclosed. The coating comprises a glass frit and a binder comprising an interpenetrating polymer network. The interpenetrating polymer network comprises a crosslinked polyol resin, a second crosslinked resin, and a third resin. A method of forming the glass article containing the coating is also disclosed.

Abstract: A silicone resin is disclosed. The silicone resin is free from carbon atoms. A method of preparing the resin is additionally disclosed. This method comprises reacting a silane compound and a precursor compound, thereby preparing the silicone resin. A composition including the silicon resin and a vehicle is further disclosed. A method of preparing a film with the composition is also disclosed. This method comprises applying the composition including the silicone resin and the vehicle to a substrate to form a layer. This method also includes heating the layer to give the film.