Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A salt represented by the formula (I). wherein Q1, Q2, R1, R2, R3, R4, R5, z, and Z+ are defined in the specification.

Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

Abstract: Described are polyesters comprising (a) a dicarboxylic acid component comprising 2,5-furandicarboxylic acid residues; optionally, aromatic dicarboxylic acid residues and/or modifying aliphatic dicarboxylic acid residues, 2,2,4,4-tetramethyl-1,3-cyclobutanediol residues and ethylene glycol. The polyesters may be manufactured into articles such as fibers, films, bottles, coatings, or sheets.

Abstract: An ink composition including a metal salt; an optional solvent; and a stable component that is stable in the ink composition until treated, wherein, upon treatment, the component forms a compound that reduces the metal salt to form metal. An ink composition including a metal salt; an initiator; and an optional solvent; wherein, upon treatment, the initiator forms a compound which reduces the metal salt to metal. A process including combining a metal salt, an initiator, and an optional solvent, to form an ink; wherein, upon treatment, the initiator forms a compound which reduces the metal salt to metal. A process including providing an ink composition comprising a metal salt, an initiator, and an optional solvent; depositing the ink composition onto a substrate to form deposited features; and treating the deposited features on the substrate wherein the initiator forms a compound which reduces the metal salt to metal to form conductive features on the substrate.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: Techniques for providing a high temperature soft mask for semiconductor devices are described. In an embodiment, spin coating semiconductor device components with organic planarization material having a defined aromatic content aromatic content to provide an organic planarization layer. The method can further comprise ultra-fast annealing the organic planarization layer and forming an implanted or doped region in the semiconductor device. Three-dimensional FinFET components of a device can be spin coated with organic planarization material having high aromatic content, with the device cured at a first temperature. The organic planarization layer can be ultra-fast annealed at a second temperature that is greater than the first temperature. Aspects can include patterning the device, and forming an implanted or doped region in a semiconductor device.

Abstract: A curable composition is provided comprising at least one monomer comprising a multifunctional monomer. Each monomer has a solubility parameter (SP) of from 7 to 11 (cal/cm3)0.5, and a cured film produced by curing the curable composition has a glass transition temperature of from 0° C. to 30° C.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: A compound represented by the formula (I): wherein the values of R1, R2, R3, Ar and X1 in formula (I) are defined in the specification.

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

Abstract: Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.

Abstract: A compound represented by the formula (I). wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom; R2 represents a C1 to C12 fluorinated saturated hydrocarbon group; W1 represents a C5 to C18 divalent alicyclic hydrocarbon group; A1 and A2 independently represents a single bond or *-A3-X1-(A4-X2)a—; A3 and A4 independently represents a C1 to C6 alkanediyl group; X1 and X2 independently represents —O—, —CO—O— or —O—CO—; a represents 0 or 1; and * represents a bond to an oxygen atom.

Abstract: There is provided a method of manufacturing an organic light-emitting device including: forming a first organic material layer on a substrate; and forming a mask in a first region on the first organic material layer, and then selectively removing the first organic material layer to form a first organic layer in the first region.

Abstract: Provided are a resin film which exhibits an excellent low reflectivity, a coloring photosensitive composition capable of forming a resin film which exhibits an excellent low reflectivity, a resin film production method, a color filter, a light shielding film, a solid-state imaging element, and an image display device. The resin film of the present invention includes at least two or more resins, a coloring agent, and a photoacid generator, in which the resin film has a peak at which the value of A1/A2 is greater than 0.1 and 2.5 or less in a light scattering measurement of the resin film, in the case where a half-width of the peak is A1 and a scattering angle of a maximum light intensity of the peak is A2 in a spectrum in which a scattering angle is plotted on the horizontal axis and a scattered light intensity is plotted on the vertical axis.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: The present invention relates to a photocurable resin composition usable in a nanoimprint process which is capable of overcoming low productivity of conventional semiconductor processes for optical devices and electronic devices, and a method of forming patterns using the same. Specifically, the present invention relates to a photocurable resin composition including a specific perfluorinated acrylic compound for improving release property between a nanoimprint mold and the photocurable resin composition, and a method of forming patterns using the same.

Abstract: This disclosure enables direct 3D printing of preceramic polymers, which can be converted to fully dense ceramics. Some variations provide a preceramic resin formulation comprising a molecule with two or more C?X double bonds or C?X triple bonds, wherein X is selected from C, S, N, or O, and wherein the molecule further comprises at least one non-carbon atom selected from Si, B, Al, Ti, Zn, P, Ge, S, N, or O; a photoinitiator; a free-radical inhibitor; and a 3D-printing resolution agent. The disclosed preceramic resin formulations can be 3D-printed using stereolithography into objects with complex shape. The polymeric objects may be directly converted to fully dense ceramics with properties that approach the theoretical maximum strength of the base materials. Low-cost structures are obtained that are lightweight, strong, and stiff, but stable in the presence of a high-temperature oxidizing environment.

Abstract: A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation. The method of pattern formation includes forming a film of a silicon-containing composition on the support equipped with an electrode forming a film of a resin composition on the film of a silicon-containing composition, and forming the film of a resin composition into a pattern.

Abstract: Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

Abstract: Provided are a photocurable composition capable of suppressing both deformation (change in line width roughness (?LWR)) of a pattern after etching and breakage of a pattern after etching, a pattern forming method, and a method for manufacturing a device.

Abstract: A photosensitive composition is disclosed including a fluorinated photo cross-linkable polymer provided in a fluorinated solvent such as a hydrofluoroether. The photo cross-linkable polymer includes a first repeating unit having a fluorine-containing group but not a cinnamate group, and a second repeating unit having a fluorine-containing cinnamate group. The polymer has a total fluorine content in a range of 30 to 60% by weight. The composition can be used to form patterned barrier or dielectric structures over substrates and devices such as organic electronic devices.

Abstract: Disclosed herein are solder mask formulations that include a liquid photo imagable solution and a solution of functionalized diamondoids. Also disclosed are semiconductor fabrication methods that include applying a described solder mask formulation to a semiconductor device.

Abstract: A method for producing flexographic printing plates, using a photopolymerizable flexographic printing element having, arranged one atop another, a dimensionally stable support, a photopolymerizable, relief-forming layer, an elastomeric binder, an ethylenically unsaturated compound, and a photoinitiator, and optionally a rough, UV-transparent layer, a particulate substance, and digitally imagable layer. The method includes: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photpolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development.

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

Abstract: A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.

Abstract: A compound represented by the formula (I). wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom; R2 represents a C1 to C12 fluorinated saturated hydrocarbon group; W1 represents a C5 to C18 divalent alicyclic hydrocarbon group; A1 and A2 independently represents a single bond or *—A3—X1—(A4—X2)a—; A3 and A4 independently represents a C1 to C6 alkanediyl group; X1 and X2 independently represents —O—, —CO—O—or —O—CO—; a represents 0 or 1; and * represents a bond to an oxygen atom.

Abstract: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.

Abstract: Various compositions encompassing polymers containing acidic pendent groups in combination with one or more reactive olefinic compounds and a photoacid generators form self-imagable negative tone films. Examples of such polymers include polymers and copolymers containing norbornene-type repeating units having acidic pendent groups, ring opened maleic anhydride polymers, polyacrylic acid, polyhydroxystyrene polymers, and the like. The films formed from such compositions provide self imagable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices, among other applications.

Abstract: A method for instillation molding UV epoxy resin includes: the UV epoxy resin preparation step: adding at least two photosensitizers to a single component epoxy resin and uniformly mixing them to obtain the UV epoxy resin, wherein the photosensitizer with the highest content in the UV epoxy resin is a photosensitive curing agent for curing the UV epoxy resin, and the rest photosensitizers are photosensitive viscosity regulating agents for regulating the viscosity of the UV epoxy resin to be suitable for instillation molding; and instillation step: dividing the instillation molding of the UV epoxy resin into N procedures performed in one work station, wherein zero, one or more photosensitive viscosity regulating agents are initiated in each procedure, so that the UV epoxy resin reaches a viscosity suitable for respective instillation procedure and is subsequently instillation molded; curing step: initiating the photosensitive curing agent to finally cure the UV epoxy resin.

Abstract: Provided are a lithographic printing plate precursor including: a hydrophilized aluminum support, and a water-soluble or water-dispersible negative type image recording layer provided on the aluminum support, in which an arithmetic average height Sa of a surface of an outermost layer on a side opposite to a side where the image recording layer is provided is in a range of 0.3 ?m to 20 ?m; a method of producing the lithographic printing plate precursor; a lithographic printing plate precursor laminate formed of the lithographic printing plate precursor; and a lithographic printing method.

Abstract: A chemically amplified resist composition comprising a quencher containing a quaternary ammonium iodide, dibromoiodide, bromodiiodide or triiodide, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: An ink adapted for forming conductive elements is disclosed. The ink includes a plurality of nanoparticles and a carrier. The nanoparticles comprise copper and have a diameter of less than 20 nanometers. Each nanoparticle has at least a partial coating of a surfactant configured to separate adjacent nanoparticles. Methods of creating circuit elements from copper-containing nanoparticles by spraying, tracing, stamping, burnishing, or heating are disclosed.

Abstract: Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.

Abstract: A photoresist composition includes a photosensitive polymer including a polymer chain and at least one first functional group coupled to the polymer chain, and a photoacid generator. The first functional group has a structure represented by the following Chemical Formula 1, where R1 is one of an alkyl group having a carbon number of 1 to 20 and an aryl group having a carbon number of 1 to 20, and R2 is one of —H, —F, —Cl, —Br, an alkyl group having a carbon number of 1 to 20, and an aryl group having a carbon number of 1 to 20.

Abstract: The present invention provides methods, processes, and systems for the manufacture of three-dimensional articles of polymer materials using 3D printing. A syringe or an inkjet print head prints a solution of prepolymer onto a build plate. The printed prepolymer is exposed to a stimulus whereby the prepolymer is converted to the polymer. After a predetermined time, sequential layers are printed to provide the three-dimensional article. The three-dimensional article can be cured to produce the 3D article made from the final polymer.

Abstract: A resin composition is provided that is capable of inhibiting degradation of the organic EL device. The resin composition, includes: (A) an alicyclic epoxy compound; (B) a bisphenol A epoxy resin; (C) a bisphenol F epoxy resin; and (D) a photocationic polymerization initiator. The bisphenol A epoxy resin (B) and the bisphenol F epoxy resin (C) are compounds not having the alicyclic epoxy compound (A) and the resin composition has a moisture content of 1000 ppm or less. Alternatively, the resin composition may further include a filler (H) and may have a moisture content of 50 ppm or more.

Abstract: A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: a plurality of quantum dots; a color filter material including an absorption dye, an absorption pigment, or a combination thereof; a polymer binder; a photopolymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a photoluminescence peak wavelength (PL peak wavelength) of the quantum dot and a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per 10 parts by weight of the plurality of quantum dots.

Abstract: A resin is to be added to a resist composition and localized on a surface of a resist film so as to hydrophobilize the surface of a resist film and has a peak area of a high molecular weight component having a molecular weight of 30,000 or more is 0.1% or less of a total peak area in a molecular weight distribution measured by gel permeation chromatography.

Abstract: A composition for nanoimprint including a cycloolefin-based copolymer; a polymerizable monomer; and a photoinitiator. The polymerizable monomer of the present invention may include a polyfunctional monomer, and the cycloolefin-based copolymer may include a constituent unit having a cyclic olefin and a constituent unit having an acyclic olefin.

Abstract: A salt represented by the formula (I). wherein Z+, Q1, Q2, R1, R2, R3, R4, R5, Z, X1, X2, Xa, Xb, L1, L2, L3 and L4 are defined in the specification.

Abstract: New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

Abstract: Provided are a resin blend for forming a layer-separated structure, a pellet, a method of preparing a resin article using the same and a resin article. The resin blend may include a first resin, and a second resin that comprises a resin to which at least one organic functional group selected from the group consisting of an alkyl group having 2 to 20 carbon atoms, an alicyclic group having 5 to 40 carbon atoms and an aromatic group having 6 to 40 carbon atoms is introduced, that has a difference in melt viscosity from the first resin of 0.1 to 3000 pa*s at a shear rate of 100 to 1000 s?1 and a processing temperature of the resin blend, and that has a difference in glass transition temperature from the first resin of 10° C. to 150° C. The resin blend can improve mechanical and surface characteristics of a resin article.

Abstract: A medium feeding device includes: a placement unit on which a medium is placed; a feeding section that feeds the medium placed on the placement unit; a wrinkle detection section that is provided on a further upstream side than the feeding section in a feeding direction and outputs a detection value in accordance with a wrinkle in the medium; and a control section that performs predetermined control on the basis of the detection value of the wrinkle detection section and stops the feeding section in a case in which the detection value output from the wrinkle detection section exceeds a predetermined allowable value.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.

Abstract: A lithographic printing plate precursor including a hydrophilized aluminum support, and a water-soluble or water-dispersible negative type image recording layer provided on the aluminum support, in which an arithmetic average height Sa of a surface of an outermost layer on a side where the image recording layer is provided is in a range of 0.3 ?m to 20 ?m; a method of producing a lithographic printing plate precursor; a lithographic printing plate precursor laminate formed of the lithographic printing plate precursor; a plate-making method for a lithographic printing plate; and a lithographic printing method.

Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a morpholino group offers dimensional stability on PPD and a satisfactory resolution.

Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Abstract: The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring.