Abstract: On the fly switching from one memory device refresh rate to another is provided. Control logic associated with the memory device detects a condition to switch from a currently-applied refresh rate to a different refresh rate. In response to the condition, the refresh rate is dynamically switched. The switching does not require a change of a mode register. Thus, a refresh rate for the memory device can be dynamically changed on the fly.

Abstract: A rewrite apparatus calculates a risk of destruction of data due to data retention in each file. It is determined whether a refresh start condition is satisfied. The refresh start condition is provided in accordance with the calculated risk. When the refresh start condition is satisfied, it is determined that the possibility to completely execute the refresh is high. The refresh is thereby executed. The rewrite apparatus can thus reduce the possibility to interrupt the refresh of the data stored in the storage medium such as a flash memory.

Abstract: A temperature sensing system, which comprises: a temperature analyzing circuit, for sensing temperature and generating an analyzing result in response to the sensed temperature; and a control unit, for controlling a temperature sensing time interval; wherein the control unit continuously changes the temperature sensing time interval according to a predetermined temperature range in response to the sensed temperature.

Abstract: In accordance with the teachings of the present invention, a system and method for optimizing DRAM refreshes in a multi-channel memory controller are provided. In a particular embodiment, the method includes receiving, at a router in a light modulation system, a signal from one of a plurality of channels operable to read or write to a plurality of DRAM banks, the signal indicating that the channel does not need to access the plurality of DRAM banks during predetermined time period. The method also includes indicating the receipt of the signal to a refresh channel including a plurality of counters, wherein each counter is operable to track refreshes of a respective one of the plurality of DRAM banks. The method further includes receiving, from the refresh channel, an indication of one of the plurality of DRAM banks to refresh in response to the receipt of the signal, and refreshing the indicated DRAM bank.

Abstract: A memory system is provided. The system includes a volatile memory, a refresh counter configured to monitor a number of advanced refreshes performed in the volatile memory, and a controller configured to check the refresh counter to determine whether a regularly scheduled refresh can be skipped in response to detecting a request for the regularly scheduled refresh.

Abstract: Operation control circuits start a first operation of any of memory cores in response to a first operation command, start a second operation of any of the memory cores in response to a second operation command, and terminate the first operation and continue the second operation in response to a termination command to terminate operations of the plurality of memory cores. For example, the semiconductor memory is mounted on a system together with a controller accessing the semiconductor memory. The termination of the operation in response to the termination command is judged in accordance with an operation state of the memory core. Accordingly, it is possible to terminate the operation of the memory core requiring the termination of operation without specifying the memory core from outside.

Abstract: A multi-port memory device includes a refresh register and a refresh controller for preventing refresh starvation in a shared memory unit of the memory device. The memory device further includes a plurality of ports sharing access to the shared memory unit. The refresh register stores information regarding at least one refresh command. The refresh controller determines whether to activate an internal refresh operation at a transition in port authority according to such information stored in the refresh register.

Abstract: Embodiments include a system, a memory controller, an apparatus, a device, and a method. An embodiment provides a device that includes a memory that requires a periodic refresh and having a nominal refresh period, and a processor operably coupled with the memory. The device also includes a hardware-implemented control circuit for periodically discovering a retention time of at least a portion of the memory that requires a periodic refresh. The hardware-implemented control circuit is also for determining a refresh period that is not more than the discovered retention time of the at least a portion of the memory that requires a periodic refresh, and for scheduling a refresh of the at least a portion of the memory that requires a periodic refresh at least once each refresh period.

Abstract: A dynamic random access memory (DRAM) unit and a data refreshing method thereof are provided. The DRAM unit includes a memory array, a refresh address module, and a refresh control module. The memory array includes multiple memory cells. The refresh address module produces a refresh word line address cyclically during a refresh mode. The refresh control module coupled to the memory array and the refresh address module obtains a start word line address and a stop word line address corresponding to the start word line address to form a memory word line address interval. Then, the refresh control module determines that the refresh word line address is within the memory word line address interval to execute a data charging operation to the memory cells corresponding to the refresh word line address, or stop the data charging operation otherwise, so as to reduce power consumption during the refresh mode.

Abstract: A method, system, and computer program product for mitigating adjacent track erasures in hard disks, includes: determining input/output (I/O) characteristics for a plurality of blocks on a hard disk; assigning the plurality of blocks to a plurality of categories of I/O characteristics by the processor; and clustering content of the blocks assigned to the same category in one or more continuous tracks on the hard disk. Each block is assigned to one category. Blocks with similar I/O characteristics are clustered on one or more continuous tracks. By performing this clustering, blocks with a high number of I/O operations are grouped and stored on fewer tracks than if they were scattered across numerous tracks. This reduces the number of tracks experiencing a high number of I/O operations, and in turn, the amount of refreshing of adjacent tracks is reduced.

Abstract: One or more external control pins and/or addressing pins on a memory device are used to set one or both of a burst length and burst type of the memory device.

Abstract: A dynamic random access memory integrated circuit and method includes internal refresh control and an array configured to receive read and write access requests having priority over pending refresh requests, wherein refresh requests are queueable and retired on clock cycles not requiring an access of the array and complete in one clock cycle. No on-board cache memory is required. A method includes: determining within the circuit when one of the banks of the array requires a refresh, prioritizing read and write access requests over pending refresh requests, read access requests initiating an access to the array without determining whether data is available from outside the array, and retiring within a clock cycle one pending refresh request to a bank when that bank has pending refresh requests and does not also require an access of the array on that clock cycle.

Abstract: Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.

Abstract: Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.

Abstract: Systems and methods are disclosed for non-preemptive DRAM transactions. More specifically, the present invention relates to improvements in non-preemptive DRAM transactions in real-time unified memory architectures. One embodiment of the present invention relates to a method for determining access to non-preemptive DRAM devices. This method comprises determining real time need for access to the device and prioritizing access using a rate monotonic scheduling.

Abstract: To ensure that a memory device operates in self-refresh mode, the memory controller includes (1) a normal-mode output buffer for driving a clock enable signal CKE onto the memory device's CKE input and (2) a power island for driving a clock enable signal CKE_prime onto that same input. To power down the memory controller, the normal-mode output buffer drives signal CKE low, then the power island drives signal CKE_prime low, then the memory controller (except for the power island) is powered down. The power island continues to drive the memory device's CKE input low to ensure that the memory device stays in self-refresh mode while the memory controller is powered substantially off. To resume normal operations, the power module powers up the memory controller, then the normal-mode output buffer drives signal CKE low, then the power island is disabled, then the memory controller resumes normal operations of the memory device.

Abstract: A physical memory interface (Phy) and method of operating is disclosed. The Phy interface includes command and status registers (CSRs) configured to receive a first power context and second power context. Selection circuitry is configured to switch between the first and second power contexts. A plurality of adjustable delay elements are provided, each having a delay time responsive to the selected power context. A first set of CSRs configured may store the first power context and a second set of CSRs configured may store the second power context. The Phy interface may also include a plurality of drivers each having a selectable drive strength responsive to the selected power context. The Phy interface may also include a plurality of receivers each having a selectable termination impedance responsive to the selected power context. Switching between power contexts may result in adjusting of the delay elements, drive strength and/or termination impedance of one or more drivers/receivers.

Abstract: A semiconductor package is disclosed. The semiconductor package includes a package interface, a stack of semiconductor chips, a plurality of stacks of through substrate vias, and an interface circuit. The package interface includes at least a first pair of terminals. Each stack of through substrate vias includes plural through substrate vias of respective ones of the semiconductor chips, each through substrate via electrically connected to a through substrate via of an immediately adjacent semiconductor chip. The interface circuit includes an input connected to the first pair of terminals to receive a differential signal providing first information, and includes an output to provide an output signal including the first information in a single-ended signal format to at least one of the plurality of stacks of through substrate vias.

Abstract: A multi-port memory system includes a shared memory bank, and a refresh controller coupled to the shared memory bank, and configured to selectively apply refresh commands from multiple processors to the shared memory bank.

Abstract: A memory system, and process for refreshing the memory, is disclosed. The memory system includes memory, a temperature sensor configured to measure the temperature of the memory, and a memory controller configured to refresh the memory at a refresh rate, the refresh rate being controlled as a function of the temperature measured by the temperature sensor.

Abstract: Disclosed are, inter alia, methods, apparatus, computer-readable media, mechanisms, and means for communicating with a memory device, such as by a memory controller, a refresh command at least partially overlapping in time with a read and/or write command. The refresh command typically specifies a group of locations (e.g., a bank) for being at least partially refreshed.

Abstract: The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

Abstract: A sensing device and an electronic apparatus in which impairment of performance due to destruction of parameters can be reduced are to be provided. Parameters (sensor parameters 1 to n (n?1)) associated with sensors 1 to N (N?1) are stored in a ROM. A memory control unit reads out the sensor parameters 1 to n from the ROM and writes the sensor parameters into the RAM, and after that, carries out refresh processing to read out the sensor parameters from the ROM and overwrite the RAM with the sensor parameters in predetermined timing. A processing unit carries out signal processing of the sensors 1 to N based on the sensor parameters 1 to n written in the RAM.

Abstract: A hardware description language (HDL) design structure embodied on a machine-readable data storage medium includes elements that when processed in a computer aided design system generates a machine executable representation of a device for implementing dynamic refresh protocols for DRAM based cache. The HDL design structure further includes a DRAM cache partitioned into a refreshable portion and a non-refreshable portion; and a cache controller configured to assign incoming individual cache lines to one of the refreshable portion and the non-refreshable portion of the cache based on a usage history of the cache lines; wherein cache lines corresponding to data having a usage history below a defined frequency are assigned by the controller to the refreshable portion of the cache, and cache lines corresponding to data having a usage history at or above the defined frequency are assigned to the non-refreshable portion of the cache.

Abstract: A memory system including a first memory, a content addressable memory, a testing module, and a memory controller. The first memory includes first memory cells. The content addressable memory includes second memory cells and is configured to store addresses of selected ones of the first memory cells, store data having the addresses in corresponding ones of the second memory cells, and retrieve the data from the corresponding ones of the second memory cells. The testing module is configured to determine a number of the first memory cells that fail at a first refresh rate. The first refresh rate corresponds to a time period between refreshing the first memory cells. The memory controller is configured to, based on the number of the first memory cells that fail at the first refresh rate, maintain the first refresh rate, and increase the first refresh rate.

Abstract: Optimizing refresh request transmission rates in a high performance cache comprising: a refresh requestor configured to transmit a refresh request to a cache memory at a first refresh rate, the first refresh rate comprising an interval, the interval comprising receiving a plurality of first signals, the first refresh rate corresponding to a maximum refresh rate, and a refresh counter operatively coupled to the refresh requestor and configured to reset in response to receiving a second signal, increment in response to receiving each of a plurality of refresh requests from the refresh requestor, and reset and transmit a current count to the refresh requestor in response to receiving a third signal, wherein the refresh requestor is configured to transmit a refresh request at a second refresh rate, in response to receiving the current count from the refresh counter and determining that the current count is greater than a refresh threshold.

Abstract: System refresh in a cache memory includes generating a refresh time period (RTIM) pulse at a centralized refresh controller of the cache memory, activating a refresh request at the centralized refresh controller in response to generating the RTIM pulse, the refresh request associated with a single cache memory bank of the cache memory, receiving a refresh grant in response to activating the refresh request, and transmitting the refresh grant to a bank controller, the bank controller associated, and localized, at the single cache memory bank of the cache memory.

Abstract: Techniques pertaining to adjusting the operation frequency of a DRAM are disclosed. According to one embodiment, the DRAM operation frequency adjusting system includes a statistic module counting effective operations of a DRAM to obtain a bandwidth utilization rate of the DRAM at a present operation frequency; a parameter configuration module including a target frequency configuration sub-module configured to generate a target operation frequency; and a frequency switch controller for switching a present operation frequency of the DRAM to the target operation frequency. The invention adjusts the operation frequency of a DRAM according to the application environment, and creates a balance between performance and power consumption of DRAMs, and thus improves operation speed of system-on-chips as well as decreases the power consumption.

Abstract: Concurrent refresh in a cache memory includes calculating a refresh time interval at a centralized refresh controller, the centralized refresh controller being common to all cache memory banks of the cache memory, transmitting a starting time of the refresh time interval to a bank controller, the bank controller being local to, and associated with, only one cache memory bank of the cache memory, sampling a continuous refresh status indicative of a number of refreshes necessary to maintain data within the cache memory bank associated with the bank controller, requesting a gap in a processing pipeline of the cache memory to facilitate the number of refreshes necessary, receiving a refresh grant in response to the requesting, and transmitting an encoded refresh command to the bank controller, the encoded refresh command indicating a number of refresh operations granted to the cache memory bank associated with the bank controller.

Abstract: A memory interface controller and method to allow a processor designed and configured to operate with NOR flash and static random access memory SRAM devices to instead operate using NAND flash and synchronous dynamic random access memory SDRAM. The system accomplishes this by caching sectors out of NAND flash into SDRAM, where the data can be randomly accessed by the processor as though it were accessing data from NOR flash/SRAM. Sectors containing data required by the processor are read out of NAND flash and written into SDRAM, where the data can be randomly accessed by the processor.

Abstract: A memory sharing system includes a master control device, a slave control device and a memory device. The master control device selectively generates a clock signal to the memory device. The slave control device receives and tracks the clock signal via a delay phase locked loop (DLL) to generate and align an output signal with the clock signal. The master control device arbitrates an access right.

Abstract: A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device. The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.

Abstract: Methods, devices, and systems for a memory management system within an electronic device are disclosed, such as those wherein the memory management system is external to and compatible with the architecture of currently existing operating systems. One such memory management system may include a power savings manager configured to be invoked by a memory allocation manager. The power savings manager may also be configured to determine whether physical memory blocks should be active or inactive. Furthermore, the memory management system may include a driver configured to activate or deactivate a memory block in response to a system call from the power savings manager.

Abstract: A memory controller may implement variable delay elements, on a per-bit basis, in both the read and write paths. The memory controller may include multiple adjustable delay circuits associated with data lines and a strobe line, each of the adjustable delay circuits inserting an adjustable amount of delay into a signal destined to or received from one of the data lines or the strobe line. The memory controller may additionally include control logic to determine the delay amount for each of the adjustable delay circuits, the delay amount being determined to reduce static skew between each of the data lines and the strobe line.

Abstract: A device may generate a refresh signal that identifies a beginning of a refresh interval, determine the availability of banks of a memory device, and send refresh requests to the banks during the refresh interval based on the availability of the banks.

Abstract: Systems and methods for reducing problems and disadvantages associated with power consumption in memory devices are disclosed. In accordance with one embodiment of the present disclosure, a method for improving performance and reducing power consumption in memory may include tracking whether individual units of a memory system are active or inactive. The method may also include placing inactive individual units of the memory system in a self-refresh mode, such that the inactive individual units self-refresh their contents. The method may further include placing active individual units of the memory system in a command-based refresh mode, such that the active individual units are refreshed in response to a received command to refresh their contents.

Abstract: Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.

Abstract: A memory access control apparatus includes a memory controller controlling a memory adopting a DDR format; a DDR-PHY adjusting the timing of an interface signal between the memory controller and the memory; a DDR-PHY controller controlling the DDR-PHY; and a clock controller controlling the frequency of a clock signal. A first request signal for controlling the operation of the memory in a self-refresh mode is supplied to the memory controller, a second request signal for resetting the DDR-PHY is supplied to the DDR-PHY controller, a third request signal for changing the clock frequency is supplied to the clock controller, a fourth request signal for setting a parameter for the DDR-PHY is supplied to the DDR-PHY controller, and a fifth request signal for canceling the operation of the memory in the self-refresh mode is supplied to the memory controller in order to change the clock frequency of the memory.

Abstract: A system includes a memory controller and a memory device having a command interface and a plurality of memory banks, each with a plurality of rows of memory cells. The memory controller transmits an auto-refresh command to the memory device. Responsive to the auto-refresh command, during a first time interval, the memory device performs refresh operations to refresh the memory cells and the command interface of the memory device is placed into a calibration mode for the duration of the first time interval. Concurrently, during at least a portion of the first time interval, the memory controller performs a calibration of the command interface of the memory device. The auto-refresh command may specify an order in which memory banks of the memory device are to be refreshed, such that the memory device sequentially refreshes a respective row in the plurality of memory banks in the specified bank order.

Abstract: Searching for patterns stored on a hardware storage device. A method includes, as part of a memory refresh operation, performing a read to read contents of a portion of a memory. The method further includes writing the read contents of the portion of memory back to the portion of memory. The read contents are provided to data comparison logic. Using the data comparison logic; the read contents are compared to predetermined data patterns. A determination is made as to whether or not the contents match at least one of the predetermined data patterns. When the read contents match at least one of the predetermined data patterns, a software readable indicator is provided indicating that the read contents match at least one of the predetermined data patterns. Similar embodiments may be implemented using hard drive head wear leveling operations.

Abstract: A system, device, and method for designating a first rank among a plurality of memory ranks of a Memory Module as a primary rank and a second one or more ranks as secondary ranks, triggering, via hardware logic internal to the Memory Module coupled with the plurality of memory ranks, a refresh of the primary rank at a first time (e.g., Time1), and triggering a non overlapping staggered refresh of each of the secondary ranks at a second one or more times (e.g., Time2 through Timen) corresponding to each of the respective memory ranks designated as the secondary ranks.

Abstract: A method and circuit for refreshing dynamic data stored in an integrated circuit are disclosed. The integrated circuit receives a supply voltage and operates in a self-refresh mode of operation to refresh the dynamic data at a refresh time that defines how often the dynamic data is refreshed during the self-refresh mode. The method includes monitoring a magnitude of the supply voltage and adjusting the refresh time as a function of the monitored magnitude of the supply voltage. The integrated circuit may be any type of integrated circuit that stores dynamic data, such as a memory device like a dynamic random access memory, DDR DRAM, SLDRAM, or RDRAM, or other type of integrated circuit such as a microprocessor.

Abstract: A system provides for a signal to indicate when a memory device exits from self-refresh. Thus, substantially at the same time (before or after) the memory device exits self-refresh, an indicator signal can be triggered to indicate normal operation or standard refresh operation and normal memory access of the memory device. A memory controller can access the indicator signal to determine whether the memory device is in self-refresh. Thus, the memory controller can more carefully manage the timing of sending a command to the memory device while reducing the delay time typically associated with detecting a self-refresh condition.

Abstract: Power management functionality is described for implementing an application in an energy-efficient manner, without substantially degrading overall performance of the application. The functionality operates by identifying at least first data and second data associated with the application. The first data is considered to have a greater potential impact on performance of the application compared to the second data. The functionality then instructs a first set of hardware-level resources to handle the first data and a second set of hardware-level resources to handle the second data. The first set of hardware-level resources has a higher reliability compared to the second set of hardware-level resources. In one case, the first and second hardware-level resources comprise DRAM memory units. Here, the first set of hardware-level resources achieves greater reliability than the second set of hardware-level resources by being refreshed at a higher rate than the second set of hardware-level resources.

Abstract: A memory controller and data processor have their operation mode switched from the page-on mode for high-speed access to a same page to the page-off mode in response to consecutive events of access to different pages, so that the memory access is performed at a high speed and low power consumption.

Abstract: A method for implementing dynamic refresh protocols for DRAM based cache includes partitioning a DRAM cache into a refreshable portion and a non-refreshable portion, and assigning incoming individual cache lines to one of the refreshable portion and the non-refreshable portion of the cache based on a usage history of the cache lines. Cache lines corresponding to data having a usage history below a defined frequency are assigned to the refreshable portion of the cache, and cache lines corresponding to data having a usage history at or above the defined frequency are assigned to the non-refreshable portion of the cache.

Abstract: Systems and methods to manage memory refreshes at a memory controller are disclosed. A method includes determining, at a memory controller device, that a number of transmission errors between a memory controller port and a memory redrive device exceeds an error threshold. The method may include initiating a first link retraining process between the memory controller port and the memory redrive device. The method may further include placing one or more dynamic random access memory modules associated with the memory redrive device in a self-refresh mode. The method may also include removing the one or more dynamic random access memory modules from the self-refresh mode after the link retraining process has completed. The method may further include enabling overlapping refreshes of the one or more dynamic random access memory modules.

Abstract: A semiconductor device comprises a first memory cell array, a register storing information of whether or not one of the word lines in an active state exists in a unit area and storing address information, and a control circuit controlling a refresh operation for a refresh word line based on the information in the register when receiving a refresh request. When the one of the word lines in an active state does not exist, memory cells connected to the refresh word line are refreshed. When the one of the word lines in an active state exists, the one of the word lines in an active state is set into an inactive state temporarily and the memory cells connected to the refresh word line are refreshed after precharging bit lines of the memory cells.

Abstract: In a method of controlling a memory device, the following is conveyed over a first set of interconnect resources: a first command that specifies activation of a row of memory cells; a second command that specifies a write operation, wherein write data is written to the row; a bit that specifies whether precharging occurs after the write data is written; and a code that specifies whether data mask information will be issued for the write operation. If the code specifies that the information will be issued, then the information, which specifies whether to selectively write portions of the write data, is conveyed over the first set of interconnect resources after conveying the code. The write data to be written in connection with the write operation is conveyed over a second set of interconnect resources that is separate from the first set of interconnect resources.

Abstract: In a method, system and apparatus for management of dynamic memory in battery-powered devices, information is stored in dynamic memory, such as SDRAM chips. Chip partitioning minimizes the number of chips requiring power, minimum refresh rates reduce the power needed to maintain information, and a threshold for determining when to power down a battery powered device are used to maximize battery life.