Abstract: An information handling system (IHS) includes a memory controller, a memory device, and firmware. A failing memory region and a spare memory region are included on the memory device. A memory buffer in the memory device is coupled to the failing memory region and the spare memory region. The memory buffer is operable to perform copy operations without instruction from the memory controller in order to copy data from the failing memory region to the spare memory region in response to firmware operations performed by the firmware. Firmware operations may include instructing the memory controller to produce additional refresh or calibration operation time periods, or providing an instruction to perform a data transfer operation to the spare memory region. The memory buffer is also operable to route requests from the memory controller to one of the failing memory region and the spare memory region during the copy operations.

Abstract: A system includes multiple master devices and at least one memory refresh scheduler. When a master device needs higher priority for memory access, the master device sends a dynamic priority signal to the memory refresh scheduler and in response, the memory refresh scheduler changes its policy for issuing refresh commands.

Abstract: An information recording device includes a recording medium in which renewal data, which is a target of a data refresh operation, is recorded, a reading module that reads the renewal data recorded in the recording medium, a renewal module that performs updating of a value indicating a state of the data refresh operation, a generation module that generates parity data based on the value and the read renewal data, and a recording module that records the renewal data after recording the generated parity data.

Abstract: Device, system, and method of memory allocation. For example, an apparatus includes: a Dual In-line Memory Module (DIMM) including a plurality of Dynamic Random Access Memory (DRAM) units to store data, wherein each DRAM unit includes a plurality of banks and each bank is divided into a plurality of sub-banks; and a memory management unit to allocate a set of interleaved sub-banks of said DIMM to a memory page of an Operating System, wherein a combined memory size of the set of interleaved sub-banks is equal to a size of the memory page of the Operating System.

Abstract: This invention improves the access efficiency of each of a plurality of memory devices mounted on a semiconductor chip. The invention provides a memory control circuit including a queue buffer unit, a management unit to set the CKE signal at High for a memory device to which a determination target access command is to be issued when it is determined that the determination target access command has shifted to the head position of the queue buffer unit, a command generating unit to issue an access command, and a data interface unit to execute processing specified by an access command. The management unit performs control to set the CKE signal to Low for the memory device to which the determination target access command is to be issued based on the state of the queue buffer unit when it is determined that the processing by the data interface unit is complete.

Abstract: A method for providing reduced power consumption in a computer memory system is provided. The method includes calibrating, by a processor, a volatile memory of the computer memory system at a first and a second operating speed, where the second operating speed is higher than the first operating speed. The method also includes operating, by a memory controller coupled to the processor and the volatile memory, the volatile memory at the second operating speed if a main power source provides power to the computer memory system. The method further includes operating, by the memory controller, the volatile memory at the first operating speed if a backup power source provides power to the memory controller and the volatile memory. The backup power source provides power to the memory controller and the volatile memory when there is a loss of main power to the computer memory system.

Abstract: A volatile memory device includes a memory cell array, a command decoder, a self-refresh circuit, and a register. The command decoder is configured to decode a self-refresh entry command, a self-refresh exit command, and a register read command based on external command signals received from outside the volatile memory device. The self-refresh circuit is configured to automatically refresh the memory cell array during a self-refresh mode which be entered in response to the self-refresh entry command and be exited in response to the self-refresh exit command. The register is configured to store an accessible state in response to the self-refresh exit command, and output the stored accessible state in response to the register read command. The accessible state indicates whether or not the memory cell array is ready to be read or written.

Abstract: A memory controller to implement targeted refreshes of potential victim rows of a row hammer event. In an embodiment, the memory controller receives an indication that a specific row of a memory device is experiencing repeated accesses which threaten the integrity of data in one or more victim rows physically adjacent to the specific row. The memory controller accesses default offset information in the absence of address map information which specifies an offset between physically adjacent rows of the memory device. In another embodiment, the memory controller determines addresses for potential victim rows based on the default offset information. In response to the received indication of the row hammer event, the memory controller sends for each of the determined plurality of addresses a respective command to the memory device, where the commands are for the memory device to perform targeted refreshes of potential victim rows.

Abstract: A method for controlling memory refresh operations in dynamic random access memories. The method includes determining a count of deferred memory refresh operations for a first memory rank. Responsive to the count approaching a high priority threshold, issuing an early high priority refresh notification for the first memory rank, which indicates the pre-determined time for performing a high priority memory refresh operation at the first memory rank. Responsive to the early high priority refresh notification, the behavior of a read reorder queue is dynamically modified to give priority scheduling to at least one read command targeting the first memory rank, and one or more of the at least one read command is executed on the first memory rank according to the priority scheduling. Priority scheduling removes these commands from the re-order queue before the refresh operation is initiated at the first memory rank.

Abstract: A multi-channel semiconductor memory device and a method of refreshing the same. In the multi-channel semiconductor memory device and method, a common refresh controller is prepared to detect refresh operation states of a plurality of sub-memory circuits (e.g. ICs) and to adjust refresh operation times of multiple sub-memory ICs so that two or more sub-memory ICs do not simultaneously perform a refresh operation, thereby reducing the peak current.

Abstract: A method of refreshing a memory is disclosed. The method includes accessing from active memory an active memory map. The active memory map is generated by software and identifies addresses corresponding to the active memory and associated refresh criteria for the addresses. The refresh criteria are evaluated for a portion of the active memory, and an operation initiated to refresh a portion of the active memory is based on the refresh criteria.

Abstract: A refresh control circuit includes an internal chip information unit configured to provide internal chip information related to a retention characteristic of a memory cell, a mode information modification unit configured to output modified mode information based on the internal chip information, wherein the modified mode information represent a number of memory banks for refresh operation, and a selection signal activation unit configured to activate one or more of selection signals for selecting corresponding one or more of the memory banks in response to the modified mode information.

Abstract: A memory controller issues a targeted refresh command. A specific row of a memory device can be the target of repeated accesses. When the row is accessed repeatedly within a time threshold (also referred to as “hammered” or a “row hammer event”), physically adjacent row (a “victim” row) may experience data corruption. The memory controller receives an indication of a row hammer event, identifies the row associated with the row hammer event, and sends one or more commands to the memory device to cause the memory device to perform a targeted refresh that will refresh the victim row.

Abstract: A method and apparatus for refreshing data in a flash memory device is disclosed. A counter is maintained for each memory block. When a memory block is erased, the counter for that erase block is set to zero while the remaining counters are incremented. When a memory block counter reaches a predetermined threshold value, the associated memory block is refreshed.

Abstract: An application program identifies a plurality of least recently accessed constructs of the application program that reside in DRAM memory. The application program causes the aggregation of at least a portion of the identified least recently accessed constructs onto one or more pages of the DRAM memory. The application program then causes the one or more memory pages of the DRAM memory to be put into self-refresh operation mode.

Abstract: Representative locations of a non-volatile, solid-state memory of an apparatus store characterization data. An event during which elapsed time is not measured by the apparatus is determined. In response to the event, temporal degradation of the non-volatile, solid-state memory during the event is estimated based on electrical characteristics of the representative locations.

Abstract: A computer memory, having one or more of a semiconductor memory device having an internal memory array comprising a plurality of semiconductor dynamic random access memory (DRAM) cells arranged in a matrix of rows and columns, and provided as a memory module rank of such memory devices arranged in an array on a DIMM of one or more of said semiconductor memory device on a substrate which can be coupled via a memory device data interface to a memory system as a memory subsystem, each of said memory device having a low power shut-down state that can be activated using a common memory data interface. Control of power to a DRAM issues over the data interface two commands to a DRAM power control command decode, a power-state program signal and a power-state reset signal as a power-state control commands to control the power state of said DRAM, and to activate for READ/WRITE a memory cell as a normal active or spare device.

Abstract: A method for performing refresh operations is disclosed. In response to a completion of a memory operation, a determination is made whether or not a refresh backlog count is greater than a first predetermined value. In a determination that the refresh backlog count is greater than the first predetermined value, a refresh operation is performed as soon as possible. In a determination that the refresh backlog count is not greater than the first predetermined value, a refresh operation is performed after a delay of an idle count value.

Abstract: An electronic device includes a memory control circuit that controls a DRAM, and the memory control circuit performs: a first distributed refresh process for issuing refresh commands to the DRAM at a predetermined interval so that storage elements of which the DRAM is configured are refreshed at least once in a predetermined period Ts; a concentrated refresh process for issuing, triggered by a predetermined request to the DRAM, a predetermined number of times Nc of the refresh commands in a burst at an interval that is shorter than the predetermined interval; and a second distributed refresh process for, when the predetermined number of times Nc of refresh commands have been issued, calculating a refresh interval Tr for refreshing remaining storage elements that have not yet been refreshed in the predetermined period Ts and issues refresh commands at the calculated refresh interval Tr.

Abstract: A dynamic random access memory (DRAM) unit and a data refreshing method thereof are provided. The DRAM unit includes a memory array, a refresh address module, and a refresh control module. The memory array includes multiple memory cells. The refresh address module produces a refresh word line address cyclically during a refresh mode. The refresh control module coupled to the memory array and the refresh address module obtains a start word line address and a stop word line address corresponding to the start word line address to form a memory word line address interval. Then, the refresh control module determines that the refresh word line address is within the memory word line address interval to execute a data charging operation to the memory cells corresponding to the refresh word line address, or stop the data charging operation otherwise, so as to reduce power consumption during the refresh mode.

Abstract: A system monitors data accesses to specific rows of memory to determine if a row hammer condition exists. The system can monitor accessed rows of memory to determine if the number of accesses to any of the rows exceeds a threshold associated with risk of data corruption on a row of memory physically adjacent to the row with high access. Based on the monitoring, a memory controller can determine if the number of accesses to a row exceeds the threshold, and indicate address information for the row whose access count reaches the threshold.

Abstract: A memory controller issues a targeted refresh command. A specific row of a memory device can be the target of repeated accesses. When the row is accessed repeatedly within a time threshold (also referred to as “hammered” or a “row hammer event”), physically adjacent row (a “victim” row) may experience data corruption. The memory controller receives an indication of a row hammer event, identifies the row associated with the row hammer event, and sends one or more commands to the memory device to cause the memory device to perform a targeted refresh that will refresh the victim row.

Abstract: A mechanism is described for facilitating write tracking for following data eye movements across changing thermal conditions in memory systems according to one embodiment of the invention. A method of embodiments of the invention includes monitoring movements of a valid data eye associated with a memory device of a plurality of memory devices of a memory system at a computing system. The monitoring may include initiating write commands during one or more refresh periods associated with the valid data eye. The method may include determining drifting in the movement of the data eye, and correcting the drifting based on adjusting one or more existing phase interpolator values associated with the movements of the data eye.

Abstract: A method for managing operation of a memory includes determining a status of data stored at a memory address, assigning a code based on the status of the data, and selectively performing a power management operation for an area of a memory that includes the memory address based on the code.

Abstract: Provided are memory control apparatus and methods for controlling data transfer between a memory controller and at least two logical memory busses connected to memory, comprising a memory controller; a buffer; a bidirectional data bus connecting the controller and the buffer; a control interface connecting the controller and the buffer, the buffer being connected to at least two logical memory busses for memory read and write operations, the buffer comprising data storage areas to buffer data between the controller and the logical memory busses, and logic circuits to decode memory interface control commands from the controller; and a data access and control bus connecting the buffer and each of the logical memory busses to control memory read and write operations.

Abstract: Systems and methods for retaining data in non-volatile solid-state are disclosed in which refresh copy operations are performed on data stored in non-volatile solid-state memory. A controller can comprise a data retention module configured to issue copy commands within different periods of time, and to maintain usage data on a storage subsystem. A refresh copy operation helps ensure that data written to memory retain integrity by causing data to be programmed again onto the memory, which minimizes the risk of data error caused by electron leak in the non-volatile solid-state memory. One or more data structures may be used to determine memory blocks that require refresh copy operations. In one embodiment, a validity bit array is used to track blocks that contain valid data. In another embodiment, a least recently used list is used to track blocks that have been least recently written.

Abstract: The memory controller is provided with a refresh clock generation unit, a control signal generation unit, and a refresh request generation unit. The refresh clock generation unit generates a clock obtained by frequency dividing a system clock, as a refresh clock. The control signal generation unit issues a refresh command to a memory, based on the refresh clock. The refresh request generation unit curtails, based on a specified refresh count in a specified refresh period determined by the memory, a supply to the control signal generation unit of a redundant refresh clock generated exceeding the specified refresh count, the refresh clock being generated within the specified refresh period.

Abstract: A system for designing a circuit, which includes a module, uses a computer. A user may program or adapt the computer to perform computer-aided design functions. The computer obtains a description of the module from the user. The computer parses the description of the module to identify a port of the module, and to obtain information about the port. The computer presents to the user the information that it has obtained about the port.

Abstract: A method and system for refreshing DRAM having a plurality of banks, each of the banks including a plurality of rows includes dividing all banks in DRAM into a plurality of groups of banks, each of the groups having n banks, wherein n is an integer greater than or equal to 1. A threshold of available retention time for each group of banks is determined. Each row of banks in each group of banks is refreshed. Refreshing one row of a bank in one group of banks includes determining whether a refresh operation for the row of the bank conflicts with an access operation for the bank where the row of the bank is located. If there is a conflict, then it is determined whether to perform the refresh operation or the access operation for the current row of the bank. If it is determined to perform the access operation, the access operation is continued. If it is determined to perform the recess operation, the current row of the bank is refreshed. DRAM access performance is improved.

Abstract: Embodiments include a system, an apparatus, a device, and a method. The apparatus includes a processor, a dynamic memory, and a hardware-implemented memory control circuit. The hardware-implemented control circuit includes a control circuit for establishing an extended refresh period of the dynamic memory based at least in part on a monitored result that indicates an occurrence of a memory loss in the dynamic memory. The hardware-implemented control circuit also includes a control circuit for causing a refresh of the dynamic memory during each of at least two extended refresh periods.

Abstract: A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device.

Abstract: An integrated circuit includes: a resistive memory having an array of resistive memory cells; a memory controller that controls operation of the resistive memory in accordance with external commands from an external device; and a memory scheduler coupled to the resistive memory and to the memory controller. The memory scheduler schedules internal maintenance operations within the resistive memory in response to trigger conditions indicated by at least one sensor signal or external command. The operation of the memory scheduler and performance of the internal maintenance operations are transparent to the external device and, optionally, transparent to the memory controller.

Abstract: A memory device, a memory system, and operating methods thereof are provided. The method of operating the memory device, which includes a first memory cell and a second memory cell neighboring the first memory cell, includes counting a disturbance value of the second memory cell each time the first memory cell is accessed, updating a disturbance count value of the second memory cell based on the counting, adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.

Abstract: There are provided a DDR controller, a method for implementing the same and a chip, which are applicable to the field of DDR controller technology. The method includes the steps of: parsing a plurality of buffered commands concurrently (S501); prejudging relationships between a bank and a row of an address to be accessed by each parsed command and a bank and a row of an address for a currently executed command; and transmitting a PRECHARGE command and an ACTIVE command in advance. With the above technical solution, the PRECHARGE command and ACTIVE command which should have been transmitted serially can be transmitted in advance by being hidden in parallel in a Read or WRITE period to thereby make full use of a bandwidth of a DDR device.

Abstract: A method of operating a volatile memory device includes storing address information of weak cell rows. According to some examples, after writing to a weak cell row, a refresh operation is performed on the weak cell row within a predetermined time. According to some examples, the writing operation to a weak cell row may be performed with a longer write recovery time than a write recovery time to normal cell rows.

Abstract: One embodiment sets forth an interface circuit configured to manage refresh command sequences that includes a system interface adapted to receive a refresh command from a memory controller, clock frequency detection circuitry configured to determine the timing for issuing staggered refresh commands to two or more memory devices coupled to the interface circuit based on the refresh command received from the memory controller, and at least two refresh command sequence outputs configured to generate the staggered refresh commands for the two or more memory devices.

Abstract: Dynamic operations for operations for 3D stacked memory using thermal data. An embodiment of a memory device includes memory having multiple coupled memory elements and multiple thermal sensors, including a first thermal sensor in a first area of the memory stack and a second thermal sensor in a second area of the memory stack. A memory controller is to provide operations to modify thermal conditions of the memory elements based at least in part on thermal information generated by the thermal sensors.

Abstract: Embodiments relate to embedded Dynamic Random Access Memory (eDRAM) refresh rates in a high performance cache architecture. An aspect includes receiving a plurality of first signals. A refresh request is transmitted via a refresh requestor to a cache memory at a first refresh rate which includes an interval, including a subset of the first signals. The first refresh rate corresponds to a maximum refresh rate. A refresh counter is reset based on receiving a second signal. The refresh counter is incremented after receiving each of a number of refresh requests. A current count is transmitted from a refresh counter to the refresh requestor based on receiving a third signal. The refresh request is transmitted at a second refresh rate, which is less than the first refresh rate. The refresh request is transmitted based on receiving the current count from the refresh counter and determining that the current count is greater than a refresh threshold.

Abstract: An apparatus for controlling a dynamic random access memory (DRAM), the apparatus comprising an interface to transmit, over a first plurality of wires, to the DRAM a first code to indicate that first data is to be written to the DRAM and a column address to indicate a column location of a memory core in the DRAM where the first data is to be written. The interface is further to transmit a second code to indicate whether mask information for the first data will be sent to the DRAM. If the second code indicates that mask information will be sent, a portion of the column address and a portion of the mask information are sent after the second code is sent. The interface is further to transmit to the DRAM, over a second plurality of wires separate from the first plurality of wires, the first data.

Abstract: Diverting condition storage unit 15 stores diverting conditions describing conditions for hardware configurations and software configurations. Monitoring data storage unit 13 stores monitoring data on the hardware configurations and the software configurations on monitored devices. Monitoring setting information storage unit stores monitoring setting information on the monitored devices. By referencing monitoring data and diverting conditions, first setting-diverting unit judges if monitoring setting information set in a monitored device may be diverted as monitoring setting information on another monitored device and outputs the result to a management terminal. The system administrator diverts the monitoring setting information among multiple monitored devices based on judgment result.

Abstract: A chip includes a memory array and a refresh counter. The refresh counter is configured to receive refresh trigger signals. The refresh counter is configured or configurable to initiate a refresh of the memory array only once per i of the received refresh trigger signals where i is a number greater than 1.

Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: Systems and methods for reducing problems and disadvantages associated with power consumption in memory devices are disclosed. A method for reducing power consumption in memory may include tracking, by an operating system executing on a processor, one or more logical units of a memory system that are in use. The method may also include setting, by the operating system, a variable indicating a portion of the memory system in use based on the logical units of the memory system in use. The method may additionally include refreshing one or more of the one or more logical units of the memory system based on the variable.

Abstract: A memory control apparatus includes memory control sections that read and write data from and to the DRAMs. The memory control sections periodically refresh the DRAMs. The refresh rate is set to avoid the conflict of the refresh operations as well as read and write operations that consume high power. A memory control method includes connecting memories in a memory control section where the memories perform periodic refresh and perform data write, data read, and refresh operations. Refresh commands are issued at optimum intervals and with arbitrary timing such that commands that consume high power do not conflict with each other.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: A method for operating a resistivity changing memory including applying a programming voltage to a resistivity changing memory cell to define a programmed state and applying a refresh voltage to the resistivity changing memory cell for maintaining the programmed state of the resistivity changing memory cell. In one embodiment, the refresh voltage is less than the programming voltage.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry to determine a number of queued pending refresh requests for a memory bank based on a comparison of a count from a refresh-request counter to a count from a refresh-address counter; and second circuitry to set a refresh flag in response to a determination that the number of queued pending refresh requests exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: In one embodiment, a method includes periodically collecting device operation data from a plurality of client devices of a distributed computing system, and making power management decisions for the distributed computing system based on the collected data.

Abstract: A memory system and data processing system for controlling memory refresh operations in dynamic random access memories. The memory controller comprises logic that: tracks a time remaining before a scheduled time for performing a high priority, high latency operation a first memory rank of the memory system; responsive to the time remaining reaching a pre-established early notification time before the schedule time for performing the high priority, high latency operation, biases the re-order queue containing memory access operations targeting the plurality of ranks to prioritize scheduling of any first memory access operations that target the first memory rank. The logic further: schedules the first memory access operations to the first memory rank for early completion relative to other memory access operations in the re-order queue that target other memory ranks; and performs the high priority, high latency operation at the first memory rank at the scheduled time.