Abstract: Aspects relate to systems and methods for providing the ability to customize content delivery. A device can cache multiple presentations. The device can establish a cache depth upon initiation of the subscription service. The device can provide an interface to select a cache depth. The cache depth can be the number of presentations the device will maintain on the device at a given time.

Abstract: A method of debugging an embedded dynamic random access memory (eDRAM) element of a processor core is provided. An aspect includes, based on an error occurring in the eDRAM element, stopping a functional clock, and not stopping a refresh clock. Another aspect includes, based on the functional clock being stopped, creating a fence signal that prevents all commands other than a refresh command, the refresh command being based on the refresh clock, from entering into the eDRAM element. Another aspect includes initializing a line fetch controller of the processor core with at least one of write data and read data. Another aspect includes restarting the functional clock. Another aspect includes performing at least one of write requests and read requests to the eDRAM element based on the at least one of the write data and the read data from the line fetch controller based on the functional clock.

Abstract: For limiting data loss due to ATI or ATE, an apparatus may include a storage module, a tracking module, and a refresh module. The storage module is configured to store a risk value for a tracked storage division. The risk value indicates a risk level of data loss for the tracked storage division. The tracked storage division is one of a plurality of storage divisions of a data storage device. The tracking module is configured to update the risk value to indicate a higher risk level based on a write to a physically proximal storage division. The physically proximal storage division is within an interference range of the tracked storage division. The tracking module is configured to reset the risk value based on a write to the tracked storage division. The refresh module is configured to refresh the tracked storage division based on the risk value meeting a threshold value.

Abstract: A system provides for a signal to indicate when a memory device exits from self-refresh. Thus, substantially at the same time (before or after) the memory device exits self-refresh, an indicator signal can be triggered to indicate normal operation or standard refresh operation and normal memory access of the memory device. A memory controller can access the indicator signal to determine whether the memory device is in self-refresh. Thus, the memory controller can more carefully manage the timing of sending a command to the memory device while reducing the delay time typically associated with detecting a self-refresh condition.

Abstract: Techniques for performing refresh operations is disclosed. In response to a completion of a memory operation, a determination is made whether or not a refresh backlog count is greater than a first predetermined value. In a determination that the refresh backlog count is greater than the first predetermined value, a refresh operation is performed as soon as possible. In a determination that the refresh backlog count is not greater than the first predetermined value, a refresh operation is performed after a delay of an idle count value.

Abstract: A system, device, and method for designating a first rank among a plurality of memory ranks of a Memory Module as a primary rank and a second one or more ranks as secondary ranks, triggering, via hardware logic internal to the Memory Module coupled with the plurality of memory ranks, a refresh of the primary rank at a first time (e.g., Time1), and triggering a non overlapping staggered refresh of each of the secondary ranks at a second one or more times (e.g., Time2 through Timen) corresponding to each of the respective memory ranks designated as the secondary ranks.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: An information processing device includes a first storage section 2 that includes a plurality of cells to store data; a second storage section 3 that holds refresh intervals and the states of implementation of refresh operations for each of a plurality of the cells; and a control section that controls the refresh operation of each of the cells on the basis of the refresh intervals and the states of implementation of refresh operations held by the second storage section 3. The information processing device controls the refresh operation of each of the cells at refresh intervals set for respective cells.

Abstract: A memory system that includes a memory device and a memory controller. The memory device includes a plurality of memory cells, and a first storage unit configured to store information about a weak cell from among the plurality of memory cells. The memory controller is configured to transmit an operation command signal to the memory device, and control an operation of the memory device by using the information about the weak cell provided from the first storage unit. If the operation command signal is related to an operation to be performed using a first of the memory cells and the first memory cell is the weak cell, the memory device is configured to transmit the information about the weak cell to the memory controller.

Abstract: Aspects of the disclosure provide a method for encoding ranges in a ternary content addressable memory (TCAM). The method includes determining first positive ranges and first negative ranges corresponding to a first encoding range to be encoded in the TCAM. The first encoding range is in association with a first action. The first positive ranges include the first encoding range. The first negative ranges exclude the first encoding range. At least a first positive range and a first negative range are overlapping. Further, the method includes encoding the first positive ranges in first TCAM entries, and encoding the first negative ranges in second TCAM entries. At least one of the second TCAM entries has a higher priority than one of the first TCAM entries. Then, the method includes associating the first TCAM entries to the first action, and associating the second TCAM entries to a reject action.

Abstract: Systems and methods for reducing problems and disadvantages associated with power consumption in memory devices are disclosed. A method for reducing power consumption in memory may include tracking, by an operating system executing on a processor, one or more logical units of a memory system that are in use. The method may also include setting, by the operating system, a variable indicating a portion of the memory system in use based on the logical units of the memory system in use. The method may additionally include refreshing one or more of the one or more logical units of the memory system based on the variable.

Abstract: Multi-rank memories and methods for self-refreshing multi-rank memories are disclosed. One such multi-rank memory includes a plurality of ranks of memory and self-refresh logic coupled to the plurality of ranks of memory. The self-refresh logic is configured to refresh a first rank of memory in a self-refresh state in response to refreshing a second rank of memory not in a self-refresh state in response to receiving a non-self-refresh refresh command for the second rank of memory.

Abstract: Methods and apparatus to improve throughput and efficiency in memory devices are described. In one embodiment, a memory controller may include scheduler logic to issue read or write requests to a memory device in an optimal fashion, e.g., to maximize bandwidth and/or reduce latency. Other embodiments are also disclosed and claimed.

Abstract: A method for performing refresh operations on a rank of memory devices is disclosed. After the completion of a memory operation, a determination is made whether or not a refresh backlog count value is less than a predetermined value and the rank of memory devices is being powered down. If the refresh backlog count value is less than the predetermined value and the rank of memory devices is being powered down, an Idle Count threshold value is set to a maximum value such that a refresh operation will be performed after a maximum delay time. If the refresh backlog count value is not less than the predetermined value or the rank of memory devices is not in a powered down state, the Idle Count threshold value is set based on the slope of an Idle Delay Function such that a refresh operation will be performed accordingly.

Abstract: An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.

Abstract: A search system, method and computer program are disclosed in which characters of a search term are captured as they are entered into a client system (20) and used to predict search terms. Search results are obtained for a predetermined number of the predicted search terms and cached at the client system (20). Upon determining the complete search term has been entered, search results corresponding to the complete search term are displayed.

Abstract: A memory management unit manages a state of a memory which is to be accessed by bank interleaving. The memory includes p banks (where p is an integer of 2 or greater). The memory management unit includes a control unit that dynamically determines a bank to be accessed from among the p banks. When predetermined conditions for a reserving state of the memory are satisfied and there is any unused bank in the p banks, the control unit performs power consumption reduction to control the memory to cause power consumption of the unused bank(s) to be less than power consumption of other banks in the p banks except the unused bank(s).

Abstract: One embodiment sets forth an interface circuit configured to manage refresh command sequences that includes a system interface adapted to receive a refresh command from a memory controller, clock frequency detection circuitry configured to determine the timing for issuing staggered refresh commands to two or more memory devices coupled to the interface circuit based on the refresh command received from the memory controller, and at least two refresh command sequence outputs configured to generate the staggered refresh commands for the two or more memory devices

Abstract: Provided is a memory control technique for avoiding that the issue of a refresh command and the issue of a calibration command are arranged in succession. The memory control circuit issues a refresh command to make a request for a refresh operation based on a set refresh cycle, and issues a calibration command to make a request for a calibrating operation based on a set calibration cycle, for which the control function of suppressing the issue of the calibration command only for a given time after the issue of the refresh command, and suppressing the issue of the refresh command only for a given time after the issue of the calibration command is adopted.

Abstract: A method and apparatus for ordering a plurality (P) of entries having various prefix lengths for storage in a number (T) of available storage locations in a content addressable memory (CAM) array according to the prefix lengths is disclosed. Initially, a first number (N) of the entries of selected and used to generate a distribution graph of their prefix lengths. Then, for each unique prefix length, a corresponding subset of the T storage locations in the CAM array are allocated according to a predicted prefix length distribution indicated by the distribution graph. Then, all of the entries are stored in the corresponding allocated storage locations according to prefix length.

Abstract: A method is provided for achieving SRAM output characteristics from DRAMs, in which a plurality of DRAMs are arranged connected in parallel to a controller in such a way as to be able to obtain SRAM output characteristics using the DRAMs, comprising a process in which data is output to an external device when a control signal for data reading has been input from the external device, by sequentially repeating a step in which the controller sends a data output state control signal to one DRAM and sends a refresh standby state control signal to the other DRAMs, the data is read and sent to the external device from the DRAM in the output state, and a refresh standby state control signal is sent to the DRAM which was in the output state while an output state control signal is sent to another DRAM and data is read out from the DRAM in the output state, and a step in which the controller sends a control signal for changing the output state to the refresh standby state.

Abstract: An apparatus and system associated with memory are disclosed herein. In various embodiments, an apparatus may include first circuitry configured to queue pending refresh requests for a plurality of memory banks; and second circuitry coupled to the first circuitry and configured to set a refresh flag in response to a determination that a number of queued pending refresh requests for a memory bank from the plurality of memory banks exceeds a predetermined number. Other embodiments may be disclosed and/or claimed.

Abstract: Dynamic memory systems require each memory cell to be continually refreshed. During a memory refresh operation, the refreshed memory cells cannot be accessed by a memory read or write operation. In multi-bank dynamic memory systems, concurrent refresh systems allow memory refresh circuitry to refresh memory banks that are not currently involved in memory access operations. To efficiently refresh memory banks and advanced round robin refresh system refreshes memory banks in a nominal round robin manner but skips memory banks blocked by memory access operations. Skipped memory banks are prioritized and then refreshed when they are no longer blocked.

Abstract: Systems and methods to manage memory refreshes at a memory controller are disclosed. A method includes determining, at a memory controller device, that a number of transmission errors between a memory controller port and a memory redrive device exceeds an error threshold. The method may include initiating a first link retraining process between the memory controller port and the memory redrive device. The method may further include placing one or more dynamic random access memory modules associated with the memory redrive device in a self-refresh mode. The method may also include removing the one or more dynamic random access memory modules from the self-refresh mode after the link retraining process has completed. The method may further include enabling overlapping refreshes of the one or more dynamic random access memory modules.

Abstract: A system provides for a signal to indicate when a memory device exits from self-refresh. Thus, substantially at the same time (before or after) the memory device exits self-refresh, an indicator signal can be triggered to indicate normal operation or standard refresh operation and normal memory access of the memory device. A memory controller can access the indicator signal to determine whether the memory device is in self-refresh. Thus, the memory controller can more carefully manage the timing of sending a command to the memory device while reducing the delay time typically associated with detecting a self-refresh condition.

Abstract: A method for implementing embedded dynamic random access memory (eDRAM) refreshing in a high performance cache architecture. The method includes receiving a memory access request, via a cache controller, from a memory refresh requestor, the memory access request for a memory address range in a cache memory. The method also includes detecting that the cache memory located at the memory address range is available to receive the memory access request and sending the memory access request to a memory request interpreter. The method further includes receiving the memory access request from the cache controller, determining that the memory access request is a request to refresh contents of the memory address range in the cache memory, and refreshing data in the memory address range.

Abstract: A method and system to improve the operations of a registered memory module. In one embodiment of the invention, the registered memory module allows asynchronous read and write operations when a clock circuit in the registered memory module is being activated. In another embodiment of the invention, the registered memory module allows enabling or disabling of its clock circuit without any interruption of its operation. When the clock circuit in the registered memory module is disabled, the power consumption of the registered memory module can be reduced. In yet another embodiment of the invention, the registered memory module is allowed to enter or exit an asynchronous operation mode without entering or exiting a self-refresh or pre-charge power down operation mode of the registered memory module.

Abstract: Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device. The first device performs a refresh operation once in response to the self-refresh command and updates a state of a DLL circuit in response to the self-refresh exit command.

Abstract: A mechanism for facilitating improved refresh schemes for memory devices is described. In one embodiment, an apparatus includes a memory device having refresh logic and memory cells, the memory cells including data cells and supplemental cells, the supplemental cells to be observed. The supplemental cells emulate a decay characteristic of the data cells performing regular refresh operations according to an existing refresh policy. The apparatus may further include the refresh logic to receive, from the supplemental cells, observation data relating to decaying of the supplemental cells, and correlate the observation data to data cell performance. The refresh logic to generate a policy recommendation based on the observation data collected by the supplemental cells.

Abstract: A memory controller interface, mobile device and method are provided. The memory controller interface can allow a processor designed and configured to operate with NOR flash and static random access memory SRAM devices to instead operate using NAND flash and synchronous dynamic random access memory SDRAM. The system accomplishes this by caching sectors out of NAND flash into SDRAM, where the data can be randomly accessed by the processor as though it were accessing data from NOR flash/SRAM. Sectors containing data required by the processor are read out of NAND flash and written into SDRAM, where the data can be randomly accessed by the processor. Boot code is stored in memory accessible to the processor and is read out of the memory for execution. The boot code is scanned for a predetermined signature, and if the predetermined signature is found, a portion of the memory is write-protected.

Abstract: A method for refreshing memory is provided. The method comprises determining when a first memory of a plurality of memories is not being accessed and sending a refresh opportunity command from a master refresh controller to one of a plurality of local refresh controllers when the first memory is not being accessed, wherein the one of a plurality of local refresh controllers controls only the first memory. The method further comprises determining when the first memory needs refreshing and refreshing the first memory.

Abstract: Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.

Abstract: At least one refresh without scrubbing is performed on a corresponding portion of the memory device with a first frequency. In addition, at least one refresh with scrubbing is performed on a corresponding portion of the memory device with a second frequency less than the first frequency. Accordingly, refresh operations with data scrubbing are performed to prevent data error accumulation. Furthermore, refresh operations without data scrubbing are also performed to reduce undue power consumption from the data scrubbing.

Abstract: Optimizing EDRAM refresh rates in a high performance cache architecture. An aspect of the invention includes receiving a plurality of first signals. A refresh request is transmitted via a refresh requestor to a cache memory at a first refresh rate which includes an interval, including a subset of the first signals. The first refresh rate corresponds to a maximum refresh rate. A refresh counter is reset based on receiving a second signal. The refresh counter is incremented after receiving each of a number of refresh requests. A current count is transmitted from a refresh counter to the refresh requestor based on receiving a third signal. The refresh request is transmitted at a second refresh rate, which is less than the first refresh rate. The refresh request is transmitted based on receiving the current count from the refresh counter and determining that the current count is greater than a refresh threshold.

Abstract: Concurrent refresh in a cache memory includes calculating a refresh time interval at a centralized refresh controller, the centralized refresh controller being common to all cache memory banks of the cache memory, transmitting a starting time of the refresh time interval to a bank controller, the bank controller being local to, and associated with, only one cache memory bank of the cache memory, sampling a continuous refresh status indicative of a number of refreshes necessary to maintain data within the cache memory bank associated with the bank controller, requesting a gap in a processing pipeline of the cache memory to facilitate the number of refreshes necessary, receiving a refresh grant in response to the requesting, and transmitting an encoded refresh command to the bank controller, the encoded refresh command indicating a number of refresh operations granted to the cache memory bank associated with the bank controller.

Abstract: A method, apparatus, and system to enable a partial refresh scheme for DRAM which includes specifying at least a refresh start value, or a refresh start value and a refresh end value, to reduce the number of rows that must be refreshed during a refresh cycle, thus reducing the amount of power consumed during refresh.

Abstract: A microprocessor system having a microprocessor and a double data rate memory device having separate groups of external pins adapted to receive addressing, data, and control information and a memory controller adapted to set a burst type of the double data rate memory to interleaved or sequential by sending a signal through one of the external pins of the double data rate memory device, such that when a read command is sent by the controller, depending on the burst type set, the double data rate memory device returns interleaved or sequentially output data to the memory controller.

Abstract: A memory controller and data processor have their operation mode switched from the page-on mode for high-speed access to a same page to the page-off mode in response to consecutive events of access to different pages, so that the memory access is performed at a high speed and low power consumption.

Abstract: Embodiments of the present invention include computer-implemented methods for selectively applying remedial actions, according to a predefined order, for reducing the error rate in a computer memory system. In one embodiment, an ordered set of remedial actions are sequentially invoked in response to a single-bit error (SBE) in a DIMM reaching successive error thresholds. For example, in an air-cooled system, the remedial actions may include dynamically increasing a DIMM refresh rate, dynamically increasing a rate of airflow used to cool the DIMMs, and dynamically throttling the DIMMs. The remedial actions may be layered as they are successively invoked, to provide a cumulative remedial effect. At least two of the remedial actions may be simultaneously invoked in response to a multi-bit error rate reaching an associated threshold.

Abstract: Controlling refresh request transmission rates in a cache comprising: a refresh requestor configured to transmit a refresh request to a cache memory at a first refresh rate, the first refresh rate comprising an interval, the interval comprising receiving a plurality of first signals, the first refresh rate corresponding to a maximum refresh rate, and a refresh counter operatively coupled to the refresh requestor and configured to reset in response to receiving a second signal, increment in response to receiving each of a plurality of refresh requests from the refresh requestor, and reset and transmit a current count to the refresh requestor in response to receiving a third signal, wherein the refresh requestor is configured to transmit a refresh request at a second refresh rate, in response to receiving the current count from the refresh counter and determining that the current count is greater than a refresh threshold.

Abstract: A memory controller that controls data transfer between a volatile memory and a non-volatile memory, wherein data being held in a plurality of volatile memories each having a refresh operation mode and a self-refresh operation mode is transferred to the non-volatile memory. When readout of data from at least one volatile memory has been finished, the volatile memory is shifted from the refresh operation mode to the self-refresh operation mode. Then, control is performed so as to return the volatile memory from the self-refresh operation mode depending on the progress of writing of data to the non-volatile memory.

Abstract: A demonstration system for a peripheral such as a printer connects an external, non-volatile memory to the printer in place of the host computer. One such peripheral uses a peripheral cable containing a controller or formatter that includes a computer interface for communications with the host computer and an interface for memory accesses. The peripheral cable connects to the computer interface for communications with the host computer. The demonstration system employs a controller or formatter of the same type as used in the peripheral cable and connects the interface for reading from the external memory. The controller can load both demonstration code and demonstration data from the external memory and direct the peripheral to perform a demonstration.

Abstract: A processor includes a first translation look-aside buffer to support a guest operating mode. A second translation look-aside buffer supports a root operating mode. Hardware resources support the guest operating mode as controlled by guest mode control registers defining guest context. The guest context is used by the hardware resources to access the first translation look-aside buffer to translate a guest virtual address to a guest physical address. The hardware resources access the second translation look-aside buffer to translate the guest physical address to a physical address.

Abstract: Methods and systems are provided for aging EV-DO pages in a queue based on latency-sensitivity. An access node receives data for access terminals, and responsively generates pages and adds them to the back of a queue. The access node associates a respective aging value with any latency-tolerant pages. The access node transmits the pages in the queue, which involves: (a) assessing the pages on a first-in, first-out basis; (b) transmitting latency-sensitive pages when those pages reach the front of the queue; (c) sending latency-tolerant pages to the back of the queue (and incrementing their aging values) when those pages reach the front of the queue with an aging value that is less than a maximum-delay parameter; and (d) transmitting latency-tolerant pages when those pages reach the front of the queue with an aging value that is greater than or equal to the maximum-delay parameter.

Abstract: In some embodiments, an electronic apparatus comprises a communication interface, an input/output interface, a processor, and logic to collect, in the electronic apparatus, a first identifier associated with a first communication device and second identifier associated with a second communication device, logic to establish a communication connection between the electronic apparatus and the first communication device, and logic to initiate, in the electronic apparatus, a connection request for a communication connection between the first communication device and the second communication device. Other embodiments may be described.

Abstract: A memory controller has an interface to convey, over a first set of interconnect resources: a first command that specifies activation of a row of memory cells, a second command that specifies a write operation directed to the row of memory cells, a bit that specifies whether precharging will occur in connection with the write operation, a code that specifies whether data mask information will be issued in connection with the write operation, and if the code specifies that data mask information will be issued, data mask information that specifies whether to selectively write portions of write data associated with the write operation. The memory controller interface further conveys, over a second set of interconnect resources, separate from the first set of interconnect resource, the write data.

Abstract: A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.

Abstract: A memory system with a programmable refresh cycle including a memory device that includes a memory array of memory cells and refresh circuitry that is in communication with the memory array and with a memory controller. The refresh circuitry is configured to receive a refresh command from the memory controller and for refreshing a number of the memory cells in the memory device in response to receiving the refresh command. The number of memory cells refreshed in response to receiving the refresh command is programmable.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including an address decoder to selectively access memory cells within a memory array; a mode register with bit storage circuits to store an enable bit and at least one sub-channel select bit; and control logic. The control logic is coupled to a plurality of address signal lines, the address decoder, and the mode register. In response to the enable bit and the at least one sub-channel select bit, the control logic selects one or more of the address signal lines to capture independent address information to support independent sub-channel memory accesses into the memory array. The control logic couples the independent address information into the address decoder.

Abstract: A method for performing refresh operations is disclosed. In response to a completion of a memory operation, a determination is made whether or not a refresh backlog count is greater than a first predetermined value. In a determination that the refresh backlog count is greater than the first predetermined value, a refresh operation is performed as soon as possible. In a determination that the refresh backlog count is not greater than the first predetermined value, a refresh operation is performed after a delay of an idle count value.