Abstract: While employing the same number of dedicated pins of an IC, a self-configurable interface circuit between a control bus and the IC recognizes whether the IC is being used in a system employing an SPI or a I2CBUS protocol for the transmission to the IC of control signals through the bus. The interface circuit employs an "inner" SPI interface standard block, to a third input of which either a true CE (chip-enable) signal coming from a third wire of the bus or a virtual CE signal that is self-generated by the interface circuit in case of operation in an I2CBUS environment, is fed. The third (ADDR) pin of the IC may be connected to the CE wire of the bus in case of an SPI application or it may be biased at the supply or ground voltage for selecting one or the other of two internal addresses of the IC, when functioning in an I2CBUS environment.

Abstract: Non-volatile memory cell with double level of polycrystalline silicon has a source region (38), a drain region (31), a channel region (34) between said source and drain regions, a floating gate (33), and a control gate (32) in which the channel region area extends into two lateral zones beneath the two gates and perpendicular to the source-drain direction.

Abstract: A new class of electronic systems, wherein microelectronic semiconductor integrated circuit devices are integrated on a common substrate with molecular electronic devices.

Abstract: A cell for a shift register comprises an input and an output connected to the line with which it is associated, the cell being parallel-connected on this line, and the output of the cell being separated from the rest of this cell by a tristate buffer circuit. This cell is made in such a way that the state of the inputs of the flip-flop circuits of the cell is never floating when these cells are insulated from the inputs of the cell.

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

Abstract: A bipolar control transistor, forming part of an integrated current-limiter device comprises inside an epitaxial layer superimposed over a semiconductor substrate of a first type of conductivity, a base region of a second type of conductivity accessible from a base contact and regions of collector and emitter of the first type of conductivity contained in the base region and accessible from respective collector and emitter contacts. The base region comprises at least one highly-doped deep-body region which contains almost completely said emitter region, a lightly-doped body region which contains the collector region and an intermediate-doped region which co-operates with the first deep-body region to completely contain the emitter region and a surface area of the base region that is included between the regions of collector and emitter.

Abstract: A circuit for dividing a reference current is composed of a number n of transistors connected in cascade, in a Darlington configuration, between current generator and a fractionary current output node and by N+k (where k is an integer different from zero) directly biased diodes in series, connected between the generator and the fractionary current output node. The circuit does not employ current mirrors, so all transistors may have the minimum size, which also minimizes the effects of leakage currents. Additionally, compensation elements may be used for compensating the leakage currents from the base regions of the transistors. The circuit is useful as a capacitance multiplier, or as a slow ramp generator in a large number of design situations. Independence from intrinsic parameters of the transistors used and/or from temperature of operation may be provided by employing a specifically designed reference current generator. Several embodiments are described.

Abstract: The breakdown characteristics of a lateral transistor integrated in an epitaxial layer of a first type of conductivity grown on a substrate of an opposite type of conductivity and comprising a drain region formed in said epitaxial layer, are markedly improved without recurring to critical adjustments of physical parameters of the integrated structure by forming a buried region having the same type of conductivity of the substrate and a slightly higher level of doping at the interface between the epitaxial layer and the substrate in a zone laying beneath the drain region of the transistor.

Abstract: A BiCMOS capacitive charge pump circuit for low supply voltage has a bipolar part, functionally reproducing a basic charge pump circuit and a CMOS part that comprises MOS transistors functionally connected in parallel with the driving switch toward ground potential of the charge transfer capacitance and in parallel with the output diode for substantially nullifying voltage drops on the respective bipolar components. A special driving circuit (T8, R2, I2), powered at the boosted output voltage (VOUT) responds to the rise of the voltage on the output node above a minimum level, as ensured by the bipolar part of the charge pump circuit, to drive said MOS transistors (M1, M2), thus allowing the output voltage to reach a level that is substantially double the supply voltage (Vs), even when the latter is exceptionally low, for reliably ensuring switching of the CMOS part of the circuit.

Abstract: A DFT technique for the detection of bridging faults in CMOS and BiCMOS logic ICs, employs purposely integrated monitoring inverters, driven by signal nodes of the functional circuits to be tested, for revealing the presence of intermediate voltages of a critical value. The monitoring inverters are supplied through a dedicated shadow line that is connected to either one of the supply rails of the functional circuits through a load: a resistance, for a static implementation, or a capacitor, for a dynamic (clocked) implementation. Absence of series connected built-in current sensors (BICSs) avoids degradation of the performance of the functional circuits and is compatible with scaling down of the power supply and with on-line testing techniques. Only critical bridging faults may be reliably and selectively detected, thus reducing the number of rejects, failing a conventional IDDQ test.

Abstract: The invention concerns a circuit for limiting the maximum current to be supplied to a load through a power MOS, being an improvement of the limiting circuitry which uses an equalizing capacitor. The addition of circuitry with a one-way current flow between a terminal of the equalizing capacitor and the gate terminal of the power MOS is effective to lower the voltage across the capacitor and to speed up its charging process, thereby making the current limiting action expected from the circuit a timely one. The circuitry which limits current flow to one direction may include a second MOS of the same type as the power MOS. In this way, any deviations of the power MOS from its designed operation, e.g. due to its manufacturing process variation and thermal drift phenomena, can also be compensated.

Abstract: An analog-to-digital converter (ADC), comprising an internal digital-to-analog converter (DAC), driven by a successive approximation register (SAR), and a comparator, is provided with a correction logic circuit that controls the execution of a verifying and correcting routine at the end of each conversion routine. Master-Slave cells that compose the SAR are provided with a dedicated circuitry, responding to said correction control circuit, for confirming, incrementing or decrementing the bit stored in the cell by at least an LSB. An extremely simple routine, performed at the end of each conversion cycle, allows correction of incorrectly converted digital data because of the occurrence of missing codes in the internal DAC. The corrector does not require the use of memories and/or analog circuits and is very cost- effective and permits a greatly improved production yield of complex devices containing ADCs.

Abstract: A circuit for controlled discharge of energy stored in an inductive load, comprising an active semiconductor device (T) connected serially with the inductive load (L) between first and second terminals of a voltage supply source and having a control terminal for connection to a driver circuit (C), and a control circuit (R1, R2, COMP) connected between the inductive load and said control terminal. The control circuit comprises a voltage divider (R1, R2) connected between the inductive load (L) and the first terminal of the voltage supply source, and a comparator (COMP) having first and second input terminals respectively connected to the voltage divider and to a voltage reference and an output terminal which is coupled to the control terminal of the active element (T).

Abstract: A voltage regulator for electrically programmable non-volatile semiconductor memory devices of the type comprising a gain stage (3), supplied by a programming voltage (V.sub.PP) and having an input terminal connected to a divider (6) of said programming voltage (V.sub.PP) and an output terminal (U) connected to a programming line (5) of at least one memory cell (2) comprises at least one circuit element (4) capable of adapting the line programming voltage (5) to the length (L) of the memory cell (2). This solution makes it possible to have on the bit line of the memory device a drain voltage varying according to the actual length of the memory cell.

Abstract: The invention relates to a transconductor circuit with a double input and a single output, comprising two input transistors (M1, M2) whose primary conduction terminals (D1, S1, D2, S2) are respectively connected together; in this way, variations in load current and voltage can be made lower, thereby also lowering distortion from changes in their transconductance.

Abstract: A chip card system provided with an offset portable electronic circuit includes a module that integrates one or more electronic components, a reader 4 of this module, an intermediate means 3 directly linked with the reader 4 and a conveyance means 2 to provide for the transmission of information between the module 1 and the intermediate means 3, and vice versa. The intermediate means is a chip card that enables access to standard readers. The module can be used to set up a complex application without any problem as regards available surface areas. Moreover, the reliability obtained is that of the mounting of electronic components. It is far greater than that obtained in the technology of mounting a chip in a chip card.

Abstract: A survival sequence register for a read channel employing a variable threshold peak qualification technique, has a first data shift register receiving a logic sum stream of two serial streams of coded digital data, corresponding to qualified peaks detected by a reading pick-up of positive and negative sign, respectively, and a pointer register. A control circuit generates an erase signal when an incoming pulse is recognized as corresponding to a detected peak of the same sign of the previously detected peak. The erase signal is input to logic gates which each drive a reset terminal of a flip-flop of the data shift register, with the exception of the first flip-flop of the register. The pointer register being reset when the control circuit receives a pulse corresponding to a peak of opposite polarity of the detected peak relative to the preceding pulse.

Abstract: A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance R.sub.p and a patterned width W.sub.p of the polysilicon stripes and the patterned width W.sub.M and sheet resistance R.sub.M, are related as R.sub.p W.sub.p =2R.sub.M W.sub.M. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.

Abstract: An integrated circuit containing both power and small-signal NPN bipolar devices. The small-signal devices use lateral current flow, and are completely surrounded (laterally and vertically) by an N-type well region. The N-type well region itself is completely surrounded (laterally and vertically) by a P-type isolation region. This double isolation provides improved protection against turn-on of parasitic devices, which can cause leakage problems in the conventional device structures. Optionally a self-aligned process step is used to provide a graded base doping profile in the small-signal devices.

Abstract: An electronic circuit for controlling an analog quartz clock, particularly for installation in automobiles, has first and second counters for generating control pulses at different rates according to whether the clock is to be operated in a normal mode, or a time-setting mode. In addition, a single 11-bit counter allows "fast" or "slow" resetting of the time by a single push button.