Abstract: An improved radio frequency (RF) glow discharge apparatus is disclosed for depositing dielectric films onto substrates in a continuous operation. The apparatus includes one or more capacitively coupled electrodes, with a plate of a dielectric material that overlies the surface of the electrode(s) coupled with the plasma. The thickness of the plate is sufficient such that during deposition with the apparatus of this invention, the amount of material deposited on the electrodes is negligible, and the potential between the electrodes and the substrate remains substantially the same. This, in turn, insures that the chemical structure and properties of the deposited films are reproducible over long periods of operation.

Abstract: A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.

Abstract: An apparatus for holding an IC device for tinning the leads in a wave soldering machine is disclosed. The apparatus utilizes a pair of beveled surfaces, one on each side of the lead to be tinned, to limit the extent of penetration of the lead into the molten solder. The beveled surfaces are made of a material which cannot be wet by the molten solder, therefore, surface tension of the solder will tend to limit penetration of the molten solder into the area defined by the beveled surfaces.

Abstract: An improved thick film resistor is disclosed which is comprised of a substrate, a resistor body comprised of a plurality of overlying layers of a resistor material, and a pair of spaced apart terminals each of which has a primary contact portion and a plurality of spaced apart secondary contact portions. The secondary contact portions are interleaved between the layers of resistor material and extend partially into the resistor body and are in electrical and heat transferring contact with the respective primary contact portions of each terminal. The novel thick film resistor is compact in its dimensions and is capable of dissipating substantially large amounts of heat and providing lower current densities than conventional thick film resistors.

Abstract: An improved burnishing method suitable for planarizing bonding pads on fragile semiconductor devices is disclosed. The method comprises imparting scratches of predetermined depth and spacing onto a glass slide. The bonding pad surface is contacted to the scratched glass surface under a desired pressure and a relative motion is established therebetween. The motion is continued until a smooth, defect-free bonding pad surface has been provided.

Abstract: An apparatus for rapidly and accurately positioning and holding a very small elongated body, such as a stylus holder during manufacturing is disclosed. A pair of magnets or magnetized regions are utilized to position the stylus holder both rotationally and axially. A pusher mechanism, in conjunction with a pair of locating blocks very precisely aligns the stylus holder, causing it to engage the seat of an anvil for support during the manufacturing operation. A retaining mechanism retains the stylus holder within the apparatus until completion.

Abstract: Defocusing effects by undesired wafer tilt caused by photoresist debris in prior art photolithographic apparatus are substantially eliminated by a novel plate for supporting a wafer to be imaged without generating debris. Three tabs are provided along the periphery of an aperture in the plate. Each tab is provided with a spherical body, such as a ball, precisely positioned in a predetermined plane, and arranged to contact the wafer at a tangent to the surface of the spherical body. Relative movement while loading the wafer in the apparatus with respect to the supporting balls causes substantially no discernible debris from the wafer surface material. Imaging defects on the wafer due to photoresist debris are also substantially eliminated by the apparatus.

Abstract: A multilayer, photoresist recording medium is disclosed which comprises an absorptive layer and an oxygen plasma-resistant photoresist layer thereover. The structure is substantially free of intermixing of the two layers and separation of the photoresist layer during processing. The absorptive layer is formed by a two-step curing of a composition comprising a solution of a multifunctional acrylate or methacrylate monomer, a suitable dye and a photoinitiator in a suitable solvent. A coating of this composition is rapidly solidified to form an absorptive layer by high intensity irradiation and then baked to remove residual solvent and assure complete polymerization of the monomer.

Abstract: The present invention relates to methods of forming a charge-coupled device (CCD) image sensor which includes in a substrate of semiconductor material a plurality of parallel channel regions, a channel stop region between alternate pairs of adjacent channel regions, a blooming drain region in the channel stop region between the other alternate pairs of adjacent channel regions and a blooming drain barrier region around each blooming drain. The positions of the channel stop regions, the blooming drain regions and the blooming drain barrier regions are defined by a masking layer having openings therethrough and the channel stop regions, blooming drain regions and blooming drain barrier regions are formed by embedding ions of an appropriate conductivity modifier into the substrate through the openings in the masking layer.

Abstract: High power operation of an amplifier is more easily achieved in the 15 GHz and higher portion of the radio frequency spectrum by utilizing transmission line techniques to form the elements of the amplifier. Source, drain and gate members are arranged as elements of a radio frequency transmission line on a doped, semiconductor surface. When properly biased, the device operates as an amplifier.

Abstract: An electrically alterable, nonvolatile floating gate memory device is described wherein the word line and the floating gate are arranged in a parallel relationship with the word line positioned above the floating gate and coincident therewith. A program line is oriented perpendicularly to both the floating gate and the word line in order to minimize the floating gate-program line capacitance and maximize the floating gate-word line capacitance. The net result of using such an arrangement is to reduce the disturbance of the non-selected cells during the write cycle and also to achieve a significant higher packing density.

Abstract: A semiconductor device structure incorporates a semiconductor wafer having first and second opposing major surfaces and an edge. A first region of first conductivity type is contiguous with the second surface and includes an edge portion which is contiguous with the wafer edge at the first surface. A second region, of second conductivity type, extends into the wafer from the first surface so as to form a PN junction with the first region at a predetermined depth from the first surface. A third region, of second conductivity type, extends into the wafer from the first surface to a depth greater than the predetermined depth. The third region is disposed between and is contiguous with the second region and the edge portion of the first region. When the wafer is silicon the third region has an areal charge concentration of approximately 1 to 2.times.10.sup.12 cm.sup.-2.

Abstract: An apparatus for lapping a facet at the tip of a stylus by softly setting the tip down adjacent a rotating scaife comprises a moveable carriage supported on a platform. The carriage is moved vertically along a second axis substantially orthogonal to the first axis. A stylus holder operates to pivot the stylus toward the scaife and is biased by a spring or weight to assure a soft set down of the stylus tip on the scaife. A displacement sensor senses the angular displacement of the holder and generates a displacement signal proportional to the angular displacement relative to a predetermined reference position.

Abstract: An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to conventional oxidation, the time required for formation of a thick layer of silicon dioxide in accordance with the disclosed process is substantially reduced.

Abstract: The optical transmission of an amorphous, carbonaceous film having diamond-like properties is enhanced by the ion implantation thereof with carbon ions. The film preferably is between about 30 and 110 nanometers in thickness and is implanted with a dosage of between about 10.sup.12 and 10.sup.14 carbon ions per square centimeter.

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.

Abstract: A method and apparatus for determining the true edge length of a body subtended by two other body edges comprises exposing the body to a beam of light such that the edge is imaged by an optical system for projecting a linear section across the body as a silhouette-like image onto a linear array of photosensitive detectors. The image is usually blurred due to diffraction effects. The body is initially positioned in focus and then scanned moving the array provide an image of at least a portion of the desired edge to define a reference line representing the location of the edge. The array is then moved in scanned sequence from that reference line to provide fifty percent (50%) intensity level data points to define the other body edges. Lines are fitted through such data points and extended to intersect the reference line to determine the true length of the edge even with a blurred image of portions of that edge.

Abstract: A method is provided for determining the magnitude of flatness deviation in high density information discs, such as video discs, manifesting irregularities in playback. Such flatness deviations are known as "orange-peel." A stylus riding over a relatively large area (4-5 grooves) of the disc surface provides a vertical velocity signal within a given spatial or temporal frequency band. The signal in velocity or displacement form is the quantitative measure of deviation. The method is useful for other type discs where quantitative measurements in flatness deviation are desired.

Abstract: A back-to-back diode includes a substrate having five superimposed layers of hydrogenated amorphous silicon thereon. The first and fifth layers are of one conductivity type, the second and fourth layers are intrinsic, and the third layer is of the opposite conductivity type. The layers are all of the substantially the same thickness. A conductive layer contact is provided between the substrate and the first layer and a conductive layer contact is provided on the fifth layer. The intrinsic layers may include carbon alloyed with the hydrogenated amorphous silicon.

Abstract: A method for determining the contour of a spin-coated thin film of material, such as a photoresist solution, on an uneven topography, such as a patterned semiconductor wafer, utilizes a pattern of features as isolated, raised lines of different widths. The pattern serves to provide frequency weighted parameters used to estimate the coating conformality on both simple and complex topographies. One parameter indicating the contour is independent of coating thickness and the other parameter suggests the range of feature-to-feature interaction inherent in complex topographies. The pattern is useful as a "knock-out" portion of a product wafer to monitor the contour of the coating deposited by spun-coated process steps.Orienting the line pattern in radial and tangential position reveals coating thickness relationships dependent on feature orientation with respect to the centrifugal center of the substrate.