Abstract: A novel, nonvolatile, floating gate memory structure, and a method for its fabrication, is described wherein the floating gate is substantially shielded from the substrate by the program or control gate. The program or control gate is provided with an aperture located over an auxiliary channel region. A portion of the floating gate is formed to extend through the aperture to allow charge to be played on the floating gate.
Abstract: An apparatus for accurately aligning an information-containing-disc stylus and assembling the stylus to a stylus holder. The apparatus transfers the stylus from a magazine holding a plurality of such styli into a rotary collet which is then rotated by an operator until a laser beam of light is reflected off a known surface of the stylus and impinges on a fixed target. The apparatus then causes the point of the stylus to pierce the stylus holder to a specific depth whereby the stylus is held firmly by the stylus holder.
Abstract: Capacitive electronic discs having thin conductive layers are prepared by coating a core disc with a finely particulate conductive composition comprising a thermoplastic resin, conductive carbon black particles and suitable additives. The powder coating is compressed under heat and pressure to fuse the powder to the surface of the core disc. An information pattern is embossed therein, preferably simultaneously.
Type:
Grant
Filed:
June 12, 1984
Date of Patent:
December 10, 1985
Assignee:
RCA Corporation
Inventors:
Helmut G. Kiess, Bruno K. Binggeli, Max Derendinger
Abstract: A bond region is provided on an integrated circuit chip wherein the bond region has two or more sets of closely spaced conductors, each of which is electrically connected to a different point of the integrated circuit. During the manufacturing of the device, at the time of assembly of the chip into the package one end of a connector wire may, optionally, be bonded to the bond region thereby effecting a multiple connection of these different points of the integrated circuit. Such a procedure will enable a specific mode of operation of a multi-mode device.
Abstract: A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8.degree. and 14.degree. from a particular <001> direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.
Type:
Grant
Filed:
May 7, 1984
Date of Patent:
December 10, 1985
Assignee:
RCA Corporation
Inventors:
Joseph T. McGinn, Lubomir L. Jastrzebski, John F. Corboy, Jr.
Abstract: Thin, flexible capacitive electronic discs are formed by directly compression molding a powder composition having a particle size such that no particles are larger than about 400 micrometers and a substantial portion is between about 25 and 300 micrometers and comprising a thermoplastic resin, conductive carbon black particles and suitable additives. An information track is embossed into at least one surface of the disc, preferably simultaneously with the molding step. The discs are from about 0.15 to 0.6 mm thick. Preferably, the discs are about 0.2 mm thick, which is about one-tenth of the thickness of present commercial discs.
Type:
Grant
Filed:
June 12, 1984
Date of Patent:
December 10, 1985
Assignee:
RCA Corporation
Inventors:
Helmut G. Kiess, Bruno K. Binggeli, Max Derendinger
Abstract: An integrated device which incorporates a plurality of interconnected vertical IGFETs on a single substrate is described. A monocrystalline silicon region extends from an area of the substrate surface and a plurality of insulated gate electrodes are disposed so as to be contiguous with the monocrystalline silicon region. Each of the insulated gate electrodes can be selectively biased with a predetermined voltage so as to create an inversion channel in a segment of the monocrystalline silicon region contiguous therewith.
Abstract: A semiconductor device and method for making same having three transistors, NPN, PNP, and junction field effect, concurrently formed integral to a common semiconductor device.
Abstract: It has been found that an additive comprising a mixture of phenazine dyestuffs in the combination from about 30 to 40 percent by weight of (a) a Janus Green B type dyestuff or a mixture thereof and (b) from about 70 to 60 percent by weight of Safranine T, when added to an aqueous acidic copper sulfate bath in the amount of about 0.03 to about 0.10 gram per liter of the bath, deposits copper consistently with the required properties for micromachining.
Abstract: An apparatus is shown for applying a homogeneous uniform layer of a powder to a surface of a part. The apparatus utilizes two belts which are made to track about two pairs of rollers in unison. A hopper containing the powder having an opening in the bottom is disposed so that the opening is closed off by one or both of the belts except for a slit aperture. The aperture is formed by a space between abutting ends of the two belt-roller assemblies. The apparatus is arranged so that as the belts track about the rollers the aperture traverses the opening in the hopper thereby permitting powder to pass through the aperture and fall to the part to be coated which is positioned directly below the opening.
Abstract: A layer of P-type hydrogenated amorphous silicon having a wide band gap and relatively low conductivity is formed by subjecting a substance to a gaseous mixture of a silicon hydride and an acceptor material in a glow discharge while heating the substrate to a temperature of no greater than 120.degree. C. The deposited acceptor-doped hydrogenated amorphous silicon layer is then heated at a temperature of between 130.degree. C. and 300.degree. C. to increase the conductivity of the layer.
Abstract: A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.
Type:
Grant
Filed:
November 18, 1983
Date of Patent:
October 29, 1985
Assignee:
RCA Corporation
Inventors:
John F. Corboy, Jr., Lubomir L. Jastrzebski, Scott C. Blackstone, Robert H. Pagliaro, Jr.
Abstract: A thickness monitor useful in deposition or etching reactor systems comprising a crystal-controlled oscillator in which the crystal is deposited or etched to change the frequency of the oscillator. The crystal rests within a thermally conductive metallic housing and arranged to be temperature controlled. Electrode contacts are made to the surface primarily by gravity force such that the crystal is substantially free of stress otherwise induced by high temperature.
Abstract: A phase-locked laser array including a plurality of closely spaced channels in the surface of the substrate with lands therebetween with the laser oscillation occurring in a cavity region over each of the channels. A broad-area electrical contact provides uniform electrical current flow to each of the lasing regions. The individual oscillators are coupled by the overlap of their evanescent optical fields. The invention also includes a method of fabricating this array which includes the steps of forming a plurality of corrugations in the surface of a substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the surface and forming planar lands between the concave portions of the corrugations.
Abstract: The invention comprises an improved optical recording medium and information record wherein the light sensitive layer comprises a tracking layer having one or more openings extending therethrough and an absorber layer overlying the tracking layer and the openings therein thereby forming first and second regions of the light sensitive layer having different reflectivities which can be used to provide radial tracking information.The method of the invention includes the steps of depositing a tracking layer onto a light reflective layer, forming one or more openings through the tracking layer and depositing an absorber layer over the tracking layer and into the openings therein.
Abstract: An improved method of depositing borophosphosilicate glass (BPSG) on a substrate is disclosed. The improved method uses temperatures substantially lower than conventional and a volume ratio of oxygen to the total hydride content in the deposition mixture substantially higher than conventional. A BPSG film of increased purity is produced at a rate of deposition substantially faster than conventional procedures.
Abstract: A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.
Type:
Grant
Filed:
November 5, 1982
Date of Patent:
October 8, 1985
Assignee:
RCA Corporation
Inventors:
Scott C. Blackstone, Lubomir L. Jastrzebski, John F. Corboy, Jr.
Abstract: The performance of a photodetector is reduced by the presence of an electrical defect such as a short or a shunt. The invention is a method of improving the performance of this photodetector by preferentially removing a portion of an exposed surface of a detector electrode at the defect site. The preferential etching of the exposed surface is obtained by immersing the photodetector in a chemical etching ambient which has an etching rate for the exposed surface of the electrode which increases with increasing temperature while applying a reverse-bias voltage to the electrodes. The reverse-bias voltage has sufficient magnitude to cause a local increase in temperature of the exposed surface at the defect site.
Abstract: Cleaning apparatus for cleaning semiconductor wafers and the like in a chamber of cleaning fluid vibrating at ultrasonic (megasonic) frequencies utilizing an electrically energized transducer, such as a piezoelectric crystal, mounted on a conductive foil formed of tantalum or zirconium. Pinholes or other ruptures in the foil can cause high energy arcs capable of exploding vapors of inflammable solvents. The foil carrying the transducers is isolated from the cleaning fluid vapors by a closed buffer chamber containing an inert liquid that couples vibratory energy to the cleaning fluid and another closed chamber enclosing the transducers. Accordingly, cleaning fluids, such as the acetones, alcohols and ketones, heretofore considered hazardous fluids, can be used in the apparatus.
Abstract: Topographical defect detecting apparatus and process for optically inspecting a circular or spiral track surface defining a diffraction grating such as exists on a video disc or optical disc record. Light from a substantially point source illuminates the track surface. Diffracted reflections from the surface are viewed by the human eye with or without the aid of a TV camera and monitor.Non-uniformities in track spacing and deviation from average surface flatness are readily observable.
Type:
Grant
Filed:
April 15, 1983
Date of Patent:
September 17, 1985
Assignee:
RCA Corporation
Inventors:
Horatio N. Crooks, Martin J. Kelly, Jr.