Abstract: An apparatus for use in coating a selected area of a surface of a body, such as a flat disc type body, includes a support member having a recess in one side which is adapted to receive the body and an opening through the bottom of the recess which is smaller than the recess. A cup-shaped cover plate is adapted to fit into the recess in the support member. The cover plate has a bottom which is adapted to engage the body and hold it firmly against the bottom of the recess with the surface of the body to be coated being exposed through the opening in the support member. A mask of a magnetic material is adapted to fit in the opening in the support member against the surface of the body. A permanent magnet is adapted to be seated against the bottom of the cover member and attract the mask to hold the mask against the surface of the body.

Abstract: A semiconductor device and method for making same having dielectrically isolated individual elements such as transistors, diodes, et al. Some of the isolated elements having fuses formed integral thereto.

Abstract: Apparatus for detecting defects and dust on patterned surfaces, such as patterned wafers, or grooved video disks, utilizes a scanning laser that provides light scattered by defects and dust. The scattered light is detected substantially free of diffracted beams from the pattern by a mask having apertures arranged to pass to the detector only scattered light and to block diffracted light and specular reflections.

Abstract: A method for making a TFT comprises forming an amorphous silicon layer having a smooth upper surface. An insulating layer is then formed on the smooth surface at or below the critical temperature for the instantaneous crystallization of amorphous. This slowly converts the amorphous silicon to polycrystalline silicon while retaining the smooth surface. TFTs incorporating the invention have a relatively high field effect (surface) mobility.

Abstract: An apparatus for consistently and automatically positioning the point of a stylus within the field of view and at the focal point of a high power microscope while the stylus remains in the stylus cartridge. All positioning is effected through physical contact between the stylus and the apparatus without contact of the fragile stylus point occurring.

Abstract: A method for revealing the presence of heavy metal impurities that may have been introduced during the formation of a layer, such as the deposition of an epitaxial layer on a semiconductor substrate, uses the constant-magnitude steady-state surface photovoltage (SPV) method for determining the minority-carrier diffusion length by essentially two determination steps. A large ratio of the respective diffusion lengths determined before (actually measured or based on a priori knowledge of similar material) and after the epitaxial deposition step is indicative of the presence of a heavy metal impurity in the epitaxial layer. The method is based on the fact that the contaminating metal distributes itself substantially uniformly not only through the epitaxial layer but also throughout the substrate.

Abstract: A photodetector includes a cap layer over an absorptive layer with the P-N junction formed in the absorptive layer by diffusion of conductivity modifiers from the cap layer. If this diffusion extends too far into the absorptive layer, the detector is rendered useless. The invention includes a photodetector with a buffer layer between the absorptive and cap layers. The concentration of conductivity modifiers is substantially constant in the cap layer, decreases with distance in the buffer layer from the cap layer and extends into the absorptive layer. The invention also includes a method of making this device which includes the steps of forming a buffer layer over the absorptive layer, forming a cap layer over the buffer layer and diffusing the opposite type conductivity modifiers from the cap layer into the buffer and absorptive layers.

Abstract: There is disclosed herein an ion implantation apparatus providing for electron flooding during ion implantation to not only neutralize the positive space-charge on an ion beam but also provide a slightly negative space-charge on the beam whereby accumulated positive charges on an insulated device is obviated and only harmless negative charges remain.

Abstract: The protection circuit is a four layer PNPN device which includes a PMOS IGFET. The device is designed to pass current to ground when large transients are imposed across its two external terminals, thereby protecting the integrated circuit.

Abstract: A phase-locked semiconductor array wherein the lasing regions of the array are spaced an effective distance apart such that the modes of oscillation of the different lasing regions are phase-locked to one another. The center-to-center spacing between the lasing regions is non-uniform. This variation in spacing perturbs the preferred 180.degree. phase difference between adjacent lasing regions thereby providing an increased yield of arrays exhibiting a single-lobed, far-field radiation pattern.

Abstract: A continuous, in-line deposition system is disclosed for coating large substrates. The apparatus includes loadlock chambers for loading and unloading substrates arranged in carriers. The carriers transport through the apparatus a plurality of pairs of substrates with their principal faces, that is faces to be coated, held in a plane that is both parallel to the electric field of the glow discharge reaction and perpendicular to the direction of motion of the substrates through the apparatus.

Abstract: A conventional vapor phase deposition reactor tube typically formed of quartz is provided with a tubular liner supporting one or two crucibles carrying in turn one or two boats for holding constituents used for the deposition process. The liner, crucibles and boats are formed preferably of pyrolytic boron nitride (PBN). Reactant or constituent gas carrying tubes are formed preferably of sapphire. A buffer zone of an inert gas upstream of the liner and between the liner and the tube serves to isolate the liner and reactor tube from contaminating gases.

Abstract: Monocrystalline silicon is deposited on first and second portions of a substrate, the first and second portions having substantially unequal dimensions. The method comprises subjecting the substrate to a silicon-source gas and a predetermined concentration of chloride at a predetermined temperature. The chloride concentration is selected so as to create a substantially equally thick monocrystalline silicon deposit on each of the substrate portions.

Abstract: A collet is described for use in die bonding of semiconductor dies which is comprised of a shank portion and a die holder portion which has triangular side walls and is open ended.

Abstract: Apparatus, comprising a series of staggered metal contacts, is used to join adjacent ends of adjacent sets of substantially parallel semiconductor lines. The lines of one set can have a conductivity type opposite that of the lines of the adjacent set. Also, one of the sets may comprise epitaxial silicon, grown on an insulating substrate such as sapphire, while the other set comprises polycrystalline silicon.

Abstract: A diode structure is disclosed wherein the diode includes a body of a first type conductivity material; a first region of a second conductivity material in the body and having an opening therein through which a portion of the body projects; and a second region of the first conductivity material in the portion of the body that projects through the opening. The second region is rotationally positioned with respect to the first region so that it partially overlaps the first region at points of intersection of the two regions. These points of intersection are the rectifying junctions. The respective shapes of the opening and of the second region are arranged so that the sum of the areas of the breakdown junctions is a constant value notwithstanding that the second region may be displaced or misaligned with respect to the first region, provided that relative displacement or misalignment of the two regions is within defined limits.

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

Abstract: A solder is disclosed which consists essentially of from about 55 to about 65 percent by weight of tin, from about 2 to about 3.9 percent by weight of calcium with the remainder being lead. The calcium modified tin-lead solders of this invention are characterized by excellent soldering properties, especially uniform solidification on cooling, and by forming solder joints with a tensile strength of at least about 7000 PSI (49.21.times.10.sup.5 kg/sq m).

Abstract: A lenticular array which is a body having a flat surface and an opposed surface with a plurality of convex lenses thereon is aligned with a substrate having a pattern therein by placing the lenticular array over the substrate with the flat surface facing the substrate. Radiant energy is directed through the substrate and the lenticular array to project the patterns onto the lens surface of the lenticular array. The lenticular array is moved with respect to the substrate until the images of the patterns are aligned on the surfaces of the lenses.

Abstract: An imager includes an imaging device and an lenticular array mounted on the imaging device. The imaging device includes a substrate of a semiconductor material having a pair of opposed major surfaces and an array of detectors at one of the major surfaces. The lenticular array includes a substrate having a pair of major surfaces and an array of lenses at one of the major surfaces. The lenticular array is mounted on the detector device with the other major surface of the lenticular array substrate being in closely spaced relation to the other major surface of the detector device substrate. Between the two opposed major surfaces of the two substrates is a bonding cement which extends only around the detector array. Dispersed within the bonding cement are hard spacer particles which are engaged by the opposed major surfaces of the two substrates to space the substrates apart.