Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region, a second region overlying the first region and having a central zone which is thinner than a peripheral zone and a third region overlying the second region. The high electric field required for avalanche multiplication is then restricted to the portion of the first region adjacent the central zone while the field at the periphery is less than that necessary for avalanche multiplication.

Abstract: A reusable centrifuge fixture is disclosed for holding small parts, such as integrated circuit chips, during high speed rotation. The fixture is made of a moldable material having a depression formed therein conforming to the contours of the part. The fixture is made by pouring the moldable material into an open cavity of a form and the part to be centrifuged, or a replica thereof, is impressed into the surface of the moldable material prior to curing. A permanent magnet is used in conjunction with the fixture to hold the part within the centrifuge machine during set-up of the machine.

Abstract: A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.

Abstract: A process of forming conductive lines of fine dimensions over a substrate having topographical features without the formation of conductive stringers is disclosed. Openings of the desired dimensions overlying the topographical features are lithographically defined in a layer of planarizing dielectric material deposited on the substrate. A layer of doped silicon is deposited thereover and isotropically etched to remove all except for the portion in the openings in the dielectric layer. A layer of metal is deposited to overlie only the silicon in the openings in the dielectric layer. The structure is annealed to convert the metal to metal silicide and the remaining dielectric layer is removed.

Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a central zone which is thicker than a surrounding peripheral zone and a second region overlying the first region. The avalanche region is then restricted to the thicker central zone of the first region.

Abstract: The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region, a first region overlying the absorptive region and having a higher concentration zone and a surrounding peripheral zone and a second region overlying the first region. The high electric field in the avalanche region is then restricted to the higher conductivity central zone thereby reducing the electric field at the detector surfaces when a reverse-bias voltage sufficient to produce avalanche multiplication is applied to the detector.

Abstract: A CCD imager includes a thin semiconductor substrate having a glass support mounted in a recess in a housing with a portion of the glass support being exposed through a window opening in the bottom of the housing recess. A portion of the glass support is removed by securing a glass backing plate to the other surface of the silicon substrate, filling the housing recess with an epoxy material and applying a layer of an epoxy over the filling material and the backing plate. An etch resistance masking tape is placed across the center portion of the exposed surface of the glass support leaving the portions of the glass support at the corners of the housing opening exposed. The exposed portions of the glass support at the corners of the housing opening are pre-etched with a suitable etchant.

Abstract: A process of forming a low-dose ion implant of one or more of phosphorus, arsenic or boron is described. The desired impurity ion implant is preceded by an amorphizing implant of at least about 10.sup.15 ions/cm.sup.2 of fluorine ions. The implants are advantageously annealed at a temperature below about 800.degree. C.

Abstract: Multilevel metallization structures in semiconductor devices are improved by utilizing a two- or three-layer dielectric system wherein the dielectric layers differ in flow temperature by at least 50.degree. and preferably 100.degree. C., so that one layer may be flowed without reflow or mutual dissolution with an underlying contacting dielectric layer. The first dielectric layer is phosphosilicate glass and the second is borophosphosilicate glass. A third layer is also borophosphosilicate glass differing in composition from the second so as to provide the required flow temperature differential.

Abstract: A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

Abstract: An improved light emitting device, comprising a light emitting element affixed to a tapered quadrilateral mounting surface of a copper heatsink, is disclosed. The tapered mounting surface includes two slightly divergent mounting edges whereby the width of the mounting surface varies to accommodate light emitting elements of varying sizes. The angle of divergence between the two mounting edges should be kept small to provide accurate facet-to-edge alignment of the light emitting element to the mounting surface.

Abstract: A transfer apparatus is provided for advancing a molded article from the molding station to the flash trimming station of an automated molding press. The transfer apparatus is comprised of a support member having a retainer and an expandable clamp member. The expandable clamp member is mounted within the retainer. The expandable clamp member, in its fully expanded position, has an interior size sufficient to hold a molded article by flash formed about the outer edge of the molded article. In the contracted position, the clamp has an inner edge larger than the size of the flash formed about the outer edge of the article. The transfer apparatus is pivotally mounted to oscillate between the molding station and the flash trimming station. In use, the transfer apparatus is positioned with the clamp member in the fully expanded position between the molds of the molding station so as to form a molding surface against which the flash can be molded in a uniform configuration.

Abstract: An optical profilometer for surface contours subject to tilt is optically scanned to measure the surface contours. Surface tilt effects are obviated by slitted apertures in the paths of the reflection beams to pass the beams with large surface tilts (on the order of 30.degree.) without loss of sensitivity, accuracy, or precision.

Abstract: The present invention relates to a method of forming a frame transfer CCD imager having in a substrate of single crystalline silicon of one conductivity type a plurality of parallel channels of the opposite conductivity type extending along a surface of the substrate, channel stop regions between the channels, blooming drains within the channel stop regions and potential barrier region beneath each blooming drain. The method includes forming on the surface of the substrate a first masking layer of silicon oxide and a second masking layer of a photoresist over the first masking layer. Aligned openings are formed in the first and second masking layers with the openings in the first masking layer having sides which taper back under the second masking layer. Ions of a desired conductivity modifier are implanted into the substrate through the aligned openings to form the blooming drains.

Abstract: A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.

Abstract: A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm.sup.2 and preferably about 6 Watts/cm.sup.2. By maintaining the substrate temperature below about 300.degree. C., and preferably at about 130.degree. C., it has been found that a high quality silicon dioxide film up to about 1000.ANG. in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.

Abstract: A structure having dual word line, electrically alterable, nonvolatile floating gate memory cell is described wherein the word-line-to-floating gate capacitance is made significantly greater than either the program-line-to-floating gate capacitance or the floating-gate-to-substrate capacitance. This allows the program line and word line to be counter driven to minimize coupling to the floating gate during the write/erase cycle and to maximize coupling during the read cycle. The net result is higher write/erase/read efficiencies than heretofore possible.

Abstract: A method for matching the bonding pad surfaces of a device and heatsinks to be bonded, which method maximizes the uniformity of pressure applied during thermocompression bonding, is disclosed. The method comprises using the collet of a die bonding machine to burnish the bonding pad on a heatsink. The collet is then traversed to a second workstage where the collet is used to pick up a device and burnish the device bonding pad against a suitable burnishing medium. The collet, with the device, is then traversed back to the main workstage where thermocompression bonding of the device to the heatsink is carried out. The alignment of the collet is locked and maintained throughout all of the steps to insure that all burnished surfaces are parallel and that the pressure during bonding is perfectly perpendicular to those parallel surfaces.

Abstract: Apparatus for flood exposing deep ultraviolet (DUV) photoresist material from a xenon lamp source providing pulsed radiation in the DUV range formed into an annular beam by a paraboloid reflector. The radiation beam is substantially collimated with a preferred divergence of 4.degree. for mask (imaging) development. Wafers having single-layer or multi-layer photoresist material sensitive to UV radiation are flood exposed to achieve, with high resolution, imaging, even if the photoresist layers are thin. The apparatus is also used to cure DUV-sensitive photoresist material with the radiation beam having the same or preferably greater divergence. The photoresist material is flood exposed for either imaging or curing that is both rapid and uniform.

Abstract: At least one layer of a conductive organic polymer, formed by electropolymerization on the anode in a two electrode cell, is bonded to a plastic substrate by compression with sufficient heat and pressure to cause it to bond to the substrate and release from the anode. Improved sandwich-type capacitive electronic discs having an information pattern in ultra thin outer conductive layers which are homogeneous and which contain no conductive particles are formed by this process by providing as the anode a mastering disc containing an information pattern which is the negative of the desired information pattern.