Abstract: A structure for a "universal crossunder" which can reliably interconnect two spaced regions of semiconductor material of the same conductivity type is described. The structure is comprised of two layers, one P type and the other N type which lies in the area between the regions which are to be electrically joined. Accordingly, whether the regions to be electrically connected are P type or N type, electrical connection is made between them through one of the layers of the crossunder.The method of making the "universal crossunder" entails introducing a fast diffusing impurity of one conductivity type and a slow diffusing impurity of the opposite conductivity type into the area between the regions to be joined. Thus, electrical contact between the two spaced regions will be made through one or the other of the layers of the circuit.

Abstract: The audio signal-to-noise ratio obtainable in a capacitance electronic disc system which includes a conductive disc formed from a plastic resin containing conductive particles and a playback stylus is increased by spacing the playback stylus at a slight distance from the surface of the conductive disc. This spacing can be attained by depositing a thin coating of a dielectric material on the surface of the conductive disc.

Abstract: An apparatus and method is shown for measuring the shoe length of a video disc stylus and displaying a digital representation of the measured value in standard units of length for viewing by a human observer. The apparatus utilizes a video slicer for providing a selectively positionable sampling line on the screen of a monitor which displays an image of the part to be measured. The sampling line is positioned directly over the part to be measured and a signal is generated having a pulse amplitude corresponding to the brightness of the image only along the sampling line, and having a pulse width corresponding to the length of the image along the sampling line.

Abstract: Leadless electronic components are secured to the bottom surface of a printed circuit board in a manner so as to prevent or substantially reduce the displacement of the leadless components prior to or during mass soldering. The technique used to improve the bonding of the leadless components is comprised of a series of steps. Initially, holes are formed through the circuit boards at the positions where it is desired to mount leadless components. A hardenable adhesive is then applied at each of the holes where a leadless component is to be mounted. The amount of adhesive which is applied to each hole is at least sufficient to form a bond with the dielectric body of the leadless component and also to extend partially into the hole formed in the printed circuit board. The leadless components are then brought into contact with the adhesive so as to form an adhesive plug which is bonded to the dielectric body of the leadless component and also to extend into the hole formed in the board.

Abstract: A method of manufacturing a semiconductor device is disclosed wherein a matched capacitor having a relatively high capacitance is formed in the structure of a linear MOS device. The method utilizes the standard procedure for manufacturing MOS devices which includes two separate mask steps for forming contact openings to a field effect transistor. During the first mask step, the opening for the upper plate contact of the capacitor is fully etched while the opening for the lower plate contact is only partially etched. During the second mask step, the opening for the lower plate contact of the capacitor is fully etched to the lower plate. In this manner the existing standard procedure may be used without the addition of nonstandard mask and diffusion steps.

Abstract: It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.

Abstract: An apparatus and method is shown for measuring the width of a data pulse of a video signal containing a synchronizing pulse associated with each data pulse. Every N.sup.th data pulse is measured and a digital representation of the measured value is displayed in standard units of length for viewing by a human observer.

Abstract: A method for forming disilane comprises flowing monosilane gas into a reaction vessel while maintaining a glow discharge in the monosilane and flowing the reaction product comprising the disilane out of the reaction vessel at a rate such that the monosilane gas resonance time in the reaction vessel is less than about one second. An apparatus for forming disilane comprises a source of flowing monosilane, a reaction vessel and electrical means for maintaining a glow discharge in the flowing monosilane in the reaction vessel.

Abstract: A multi-layer optical record blank and information record comprises a light-reflective layer, a light-transmissive layer, a light-absorptive layer, and a heat-sensitive information layer wherein the thicknesses of the layers are chosen to achieve a low-reflection condition. Information is recorded as variations of an optical property in the information layer indirectly heated by light absorbed in the absorptive layer.

Abstract: A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction.

Abstract: Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry inside an integrated circuit from damage due to high voltage transients. The protection circuit comprises a PNPN structure forming a silicon control rectifier (SCR) and a resistive element integral to the SCR structure. In one embodiment the resistive element is a linear resistor and in another embodiment is a non-linear resistor in the form of a diode connected transistor. The SCR and the resistive element are arranged to form a two terminal, high current protection circuit which is rendered conductive when the potential difference across the two terminals is greater than one forward biased PN junction voltage drop. One terminal of the protection circuit is connected to an input or output terminal of the protected circuit, and the other terminal is connected to the most positive power supply potential.

Abstract: An improved lapping apparatus is disclosed of the type having a disc shaped lapping surface that rotates while a part to be lapped is held in engagement therewith. The improvement includes control apparatus for controlling the speed of rotation of the lap with respect to the radial position of the part on the lapping surface so that the surface speed of the lap relative to the part is held at a constant level as the part traverses the lapping surface.

Abstract: The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (I.sub.o) versus reciprocal absorption coefficient (.alpha..sup.-1) in upward-facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.

Abstract: A CMOS device incorporates a plurality of interconnected vertical IGFETs on a substrate. An insulated gate electrode is located on the substrate surface and a pair of monocrystalline silicon regions extend from the substrate surface such that each of the monocrystalline silicon regions is contiguous with a portion of the insulated gate electrode. One of the monocrystalline regions has a body region of first conductivity type and the other monocrystalline region has a body region of second conductivity type. Both of the body regions are located with respect to the insulated gate electrode such that an inversion channel can selectively be created in one of the body regions by applying a predetermined voltage to the insulated gate electrode.

Abstract: The lapping of a facet into a conical diamond tip brazed to a metallic (titanium) shank is controlled by sensing an electrical pulse generated when the diamond facet is enlarged in the vicinity of the titanium shank. A pulse detecting circuit responding to the pulse generates a control signal for energizing a mechanism to lift the stylus from the lapping scaife to cease lapping.

Abstract: A method and apparatus for aligning a surface of a pyramidal-shaped workpiece (such as a stylus) with respect to a positioning ring attached to a holder supporting the workpiece. One surface of the workpiece (electrode of the stylus) is exposed to an incident light beam of large diameter so that only a portion of the incident beam is reflected from the surface onto a calibrated screen. A mirror reflects the remaining portion of the light beam back to the other two stylus surfaces to provide a pair of reflected beams onto the same screen. The workpiece is rotated to position the three reflections on the calibrated screen for comparison to a standard.

Abstract: A gate controlled semiconductor device comprises a cathode region having a current defocusing region associated therewith. The defocusing region is unmetallized but substantially completely surrounded by cathode metallization. The defocusing region comprises only a relatively small percentage of the total cathode region and conducts current during the on-state of the device. However, during turn-off of the device substantially all of the conducting plasma is forced to flow in the defocusing region.

Abstract: An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.

Abstract: A method for positioning a diamond stone in an indented shank is described. A wetting agent put in contact with a diamond draws it upwardly into the indentation in the shank. A brazing material is added to the wetting agent to be drawn into the interface between the diamond and the shank indentation. After drying the wetting agent from the assembly, a laser beam heating the shank effects a strong, acid resistant braze of the shank and diamond. A novel brazing material in weight percent of 71% silver, 28% copper, 0.75% nickel, with 0.25 to 0.35% in the aggregate of any one or more of ruthenium, rhodium or iridium provides a strong bond with significant acid resistance.

Abstract: The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the avalanche region. This photodetector includes an absorptive region having a planar surface area surrounded by a non-planar surface area. A first region overlies the planar area and a second region of opposite conductivity type overlies both the first region and the non-planar area of the absorptive region. The high electric fields are restricted to the first region which is isolated from the surfaces of the photodetector.