Abstract: An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
Type:
Grant
Filed:
November 26, 2007
Date of Patent:
August 7, 2012
Assignee:
Infineon Technologies Austria AG
Inventors:
Frank Pfirsch, Hans-Joachim Schulze, Franz-Josef Niedernostheide
Abstract: An electronic assembly is disclosed. One embodiment includes at least one semiconductor chip and a package structure embedding the semiconductor chip. The package structure includes at least one conducting line extending into an area of the package structure outside of the outline of the chip. The electronic assembly further includes a substrate embedding the package structure.
Abstract: A power semiconductor module with segmented base plate. One embodiment provides a semiconductor module including a base plate and at least two circuit carriers. The base plate includes at least two base plate segments spaced distant from one another. Each of the circuit carriers includes a ceramic substrate provided with at least a first metallization layer. Each of the circuit carriers is arranged on exactly one of the base plate segments. At least two of the circuit carriers are spaced distant from one another.
Abstract: A method of controlling access to a device. First information is provided. Second information is retrieved from the device. The first information is used to retrieve associated third information. A key is generated based on the second information and the third information. Access to the device is controlled by using the key.
Abstract: A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. Further, the semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A first trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure includes electrically conductive material arranged in the first trench and coupled to the first electrode and a highly-doped diverter region of the second conductivity type.
Abstract: An electronic device and manufacturing thereof. One embodiment provides a carrier and multiple contact elements. The carrier defines a first plane. A power semiconductor chip is attached to the carrier. A body is formed of an electrically insulating material covering the power semiconductor chip. The body defines a second plane parallel to the first plane and side faces extends from the first plane to the second plane. At least one of the multiple contact elements has a cross section in a direction orthogonal to the first plane that is longer than 60% of the distance between the first plane and the second plane.
Abstract: A trench IGBT is disclosed. One embodiment includes an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region including additional scattering centers for holes, the embedded structure being arranged below the body contact region such that the embedded structure and the body contact region overlap in a horizontal projection.
Type:
Grant
Filed:
December 21, 2011
Date of Patent:
July 17, 2012
Assignee:
Infineon Technologies Austria AG
Inventors:
Hans-Joachim Schulze, Francisco Javier Santos Rodriguez
Abstract: One embodiment of a circuit arrangement includes first and second input voltage terminals for applying an input voltage, and at least one first semiconductor switching element having a drive terminal and a load path, the load path being connected between the input voltage terminals. A drive circuit is configured to receive a supply voltage, and has a drive output connected to the drive terminal of the at least one semiconductor switching element. A free-running oscillator is configured to generate an oscillating output voltage. A voltage supply circuit is provided for receiving the oscillating output voltage or a voltage dependent on the oscillating output voltage, and for providing the supply voltage of the drive circuit.
Abstract: A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.
Type:
Grant
Filed:
March 29, 2007
Date of Patent:
July 17, 2012
Assignee:
Infineon Technologies AG
Inventors:
Reinhold Bayerer, Guido Strotmann, Dirk Froebus, Reinhold Spanke
Abstract: An integrated circuit test controller and method defining a number N of failure events, applying the test to an integrated circuit under test by applying a predetermined sequence of input and output operations according to a test algorithm. Output data is compared to expected data, and a failure signal is generated when the output data does not correspond to the expected data. If a failure signal is generated, failure data related to the failure event is stored in a failure data register set. If the number N of failure events has been reached or if there are no more tests left, the content of the data failure register set is read out through a parallel failure data output port.
Type:
Grant
Filed:
June 13, 2005
Date of Patent:
July 17, 2012
Assignee:
Infineon Technologies AG
Inventors:
Kumar Rajeev, Renaud F. H. Gelin, Kar Meng Thong
Abstract: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.
Abstract: Disclosed is a method of injecting LPG gas into a diesel fuel engine for combustion with diesel fuel therein. One aspect includes injecting LPG gas into an air-stream of an engine air intake or manifold, measuring the percentage of LPG gas injected into the airstream or other efficiency gauge, varying the rate of injection of LPG gas into the airstream in response to the measured percentage of LPG gas therein and injecting the LPG gas at a pre-determined rate so as to maintain an LPG gas concentration in the air intake stream in the range of 0.2% to 0.6% by volume of LPG gas.
Type:
Grant
Filed:
November 28, 2007
Date of Patent:
July 3, 2012
Assignee:
Gas Tek Solutions Pty. Ltd.
Inventors:
Derek Robert Watkins, Bruce Robert Watkins, Keith Murray Rumbel
Abstract: One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.
Abstract: A rotary mower has a center deck and wing decks extend laterally outward from the center deck and are oriented horizontally when in the field position. An actuator moves each wing deck from the field position to the raised transport position where the wing decks extend upward. A transport wheel and a field wheel are mounted on each side so that in the field position, the transport wheel is above the ground and the field wheel is supports the wing deck and in the raised transport position the field wheel is above the ground and the transport wheel supports the wing deck. A wing wheel supports each wing deck when in the field position. As the center deck is towed forward in the raised transport position, the wing decks pivot rearward with respect to the center deck from the raised transport position to the trailing transport position.