Abstract: A complementary metal oxide semiconductor (CMOS) imager flush reset circuit is provided. The flush reset circuit has an interface to receive first (e.g., VDD) and second (e.g., ground) reference voltages. The flush reset circuit has a solitary (flush) signal interface. There is also an interface connected to a transistor set power interface to supply a Vflush1 signal at least one threshold voltage different than the second reference voltage, in response to receiving a flush signal. The flush signal is used to create a CMOS imager hard reset prior to a soft reset.

Abstract: A fiber optical connector microlens is provided with a focal plane aligning fiber trap. The microlens is made from a convex first lens surface, a second lens surface (planar or convex), and a fiber trap integrally formed with the second lens surface for aligning a face of an optical fiber core in a microlens focal plane. In one aspect, the fiber trap includes a barrel attached to the second lens surface and a clamping mechanism to prevent an inserted fiber core, with a diameter about equal to a barrel interior surface diameter, from being withdrawn from the barrel. The fiber trap clamping mechanism can be an irregular barrel interior surface to frictionally engage a fiber core exterior surface, a constricted region of the barrel interior surface, having a diameter smaller than an uncompressed fiber core diameter, or a corkscrew region of the barrel interior surface.

Abstract: A system and method are provided for automatically acquiring a serial data stream clock. The method receives a serial data stream with an unknown clock frequency and coarsely determines the clock frequency. The frequency is coarsely determined by (initially) selecting a high frequency first reference clock (Fref1), and counting the number of data transitions in a first time segment of the serial data stream at a plurality of sample frequencies equal to Fref1/n, where n is an integer ?1. The count for each sampling frequency is compared to the count for Fref1 (n=1). Next, the highest sampling frequency (n=x) is determined, which has a lower count than Fref1, and the coarse clock frequency is set to Fc1=Fref1/(x?1).

Abstract: A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

Abstract: A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip.

Abstract: A system and method are provided for auto-squelching digital communications. The method receives digital information from a source node. If the receive channel is corrupted, an alarm condition is detected that is associated with the received digital information. The method transmits an alarm-condition signal to a destination node, and in response to transmitting the alarm-condition signal, maintains a valid link to the destination node. For example, detecting the alarm condition may include: comparing a frequency associated with the recovered clock signal, with a reference frequency; and, detecting a variance between the recovered clock signal frequency and the reference frequency. Alternately, loss of signal, loss of lock, out of band, and run length alarm conditions may be detected. The alarm-condition signal that is transmitted may be a serial data stream of information such as all “0”s data, all “1”s data, or alternating “0”s and “1”s data for example.

Abstract: System and methods are provided, in an Optical Transport Network (OTN), for communicating asynchronous Tributary Slots (TSs) via a synchronous Optical Payload Transport Unit of level k (OTUk) interface. The transmission method accepts a plurality of TSs at a corresponding plurality of asynchronous data rates. The TSs are mapped, using a tangible memory medium, into pseudo-Optical channel Data Tributary Unit (ODTU) frames synchronized to a common clock. Then, the synchronized pseudo-ODTU frames can be interleaved into an OTUk frame, without the need of a phase-locked loop (PLL) or buffering.

Abstract: A system and method are provided for peer-to-peer distributed file storage in a network of connected clients. The method transmits data file peer-storage information from a first peer node to a network-connected backup manager. The backup manager creates a mapping plan, for mapping data file segments to a peer group, which typically includes a plurality of network-connected peer nodes. The backup manager transmits the mapping plan to the first peer node. The first peer node distributes the data file segments to the peer group in accordance with the mapping plan, for storage in tangible memory media. Typically, the first peer node accepts a data file and encrypts the data file. In one aspect, the backup manager creates a mapping plan for distributing (n+x) erasure-coded segments. After receipt of the mapping plan, the first peer node creates the (n+x) erasure coded file segments in preparation for distribution.

Abstract: A color-tunable plasmonic device is provided with a partially modulated refractive index. A first dielectric layer overlies a bottom electrode, and has a refractive index non-responsive to an electric field. A second dielectric layer overlies the first dielectric layer, having a refractive index responsive to an electric field. An electrically conductive top electrode overlies the second dielectric layer. A plasmonic layer including a plurality of discrete plasmonic particles is interposed between the top and bottom electrodes. In one aspect, the plasmonic layer is interposed between the first and second dielectric layers. In a second aspect, the plasmonic layer is interposed between the first dielectric layer and the bottom electrode. In a third aspect, a first plasmonic layer is interposed between the first dielectric layer and the bottom electrode, and a second plasmonic layer of discrete plasmonic particles is interposed between the first dielectric layer and the second dielectric layer.

Abstract: A chemical bath deposition (CBD) process is provided for forming a textured zinc oxide film pattern from a zinc oxide printed seed layer. The process provides a substrate and prints a zinc oxide seed layer in a pattern overlying the substrate. Using a CBD process, a textured zinc oxide film is grown overlying the zinc oxide seed layer pattern, where the textured zinc oxide film has a variation in film thickness of greater than 200 nanometers (nm). In one aspect, growing the textured zinc oxide film includes: preparing a ZnO precursor bath; maintaining a bath temperature of about 70 degrees C.; and, leaving the substrate in the bath for about an hour. In another aspect, growing the textured zinc oxide film includes forming a textured zinc oxide film with zinc oxide crystals having a pyramidal shape with a height of greater than 200 nm.

Abstract: A method is provided for creating a print container with a series of resident fixed documents. The method opens a user interface (UI). Using the UI, a first plurality of elements stored in memory is selected and a print container is created. The print container preserves a second plurality of elements as separate entities in the print container. For example, a print container may have an element hierarchy of jobs in the print container, fixed documents in a job, and fixed pages in a fixed document may be created. Elements are defined as print containers, fixed documents, application-specific documents, page description language (PDL) documents, extensible markup language (XML) paper specification (XPS) fixed documents, or combinations of the above-mentioned elements. In one aspect, the selected elements are extensible markup language (XML) paper specification (XPS) fixed documents, which are preserved as separate entities in an XPS container.

Abstract: A system and method are provided for delivering document print instructions in a system of network-connected devices. The method comprises: accepting printer control data at a network-connected email address; generating the printer-controller form in response to the printer control data; calling the printer-controller form; populating printer-controller form parameters; attaching a document to the printer-controller form; emailing the printer-controller form, with attachment, to a network-connected printer; and, printing the attached document in response to the printer-controller form parameters. Printing the attachment in response to the printer-controller form parameters includes the printer: opening the emailed printer-controller form; parsing the printer-controller form parameters; and, printing in response to the parsed parameters.

Abstract: An integrated circuit (IC) inductor structure is provided with transverse electrical interfaces. The inductor structure is formed on at least one IC circuit layer and has a first axis planar to a circuit layer surface, bisecting the inductor into opposite first and second sides. An input interface is formed on the circuit layer and connected to the inductor first side, parallel to a second axis, which is perpendicular to the first axis. An output interface is formed on the circuit layer and connected to the inductor second side, parallel to the second axis. In one aspect, the inductor has a center tap electrical interface parallel to the axis. In another aspect, the inductor includes a three-dimensional (3D) loop formed over a plurality of the circuit layers.

Abstract: A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm2) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cm2 at an applied electric field lower than 3 MV/cm.

Abstract: A system and method are provided for determining an optical signal frequency range in an optical/electrical transceiver. The method receives an optical receive signal having a non-predetermined data rate via a network interface, and also receives an electrical reference clock signal having a non-predetermined frequency via a framer interface. The reference clock signal frequency is cross-referenced to an optical receive signal frequency. In one aspect a clock and data recovery (CDR) voltage controlled oscillator (VCO) is selected having an output frequency matching the cross-referenced optical receive signal frequency. The optical receive signal is converted to an electrical receive signal. Initially, the VCO is frequency-locked to the reference clock. Subsequent to frequency-locking the VCO output frequency, the converted optical signal is phase-locked, generating a receive data clock. The CDR supplies a converted optical receive signal and receive data clock to the framer interface.

Abstract: A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

Abstract: A full color range analog controlled interferometric modulation device is provided. The device includes a transparent substrate, and a transparent fixed-position electrically conductive electrode with a bottom surface overlying the substrate. A transparent spacer overlies the fixed-position electrode, and an induced absorber overlies the spacer. An optically reflective electrically conductive moveable membrane overlies the induced absorber. A cavity is formed between the induced absorber and the moveable membrane having a maximum air gap dimension less than the spacer thickness. In one aspect, the distance from the top surface of the fixed-position electrode to a cavity lower surface is at least twice as great as the cavity maximum air gap dimension. In another aspect, at least one anti-reflective coating (ARC) layer is interposed between the substrate and the fixed-position electrode, and at least one ARC layer is interposed between the fixed-position electrode and the spacer.

Abstract: Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing dielectric layer embedded Si nanoparticles overlying the bottom electrode. A transparent indium tin oxide (ITO) top electrode overlies the Si-containing dielectric layer, and a photonic bandgap (PBG) Bragg reflector underlies the Si bottom electrode. The PBG Bragg reflector includes at least one periodic bi-layer of films with different refractive indexes. The single-sided photonic bandgap planar waveguide interface is formed from a planar waveguide and a PBG Bragg reflector underlying the planar waveguide.

Abstract: A novel hashing function and hashing collision resolution method are introduced that combine multiple known hashing resolution methods to achieve a very low collision probability that is specifically useful in lookup of long keys, such as (for example) the VLAN and MAC lookup in Ethernet switches. However, the system and method introduced here can be used in any networking and telecommunication systems.

Abstract: A system and method are provided for imaging job authorization. The method comprises: an authorization server receiving a request from a first node print subsystem to communicate an imaging job; in response to analyzing imaging job information, sending an access inquiry to a second node; the authorization server receiving an authorization, including a one-time use public encryption key, from the second node; sending a confirmation, including the public key, to the first node print subsystem; the first node encrypting the imaging job using the public key; sending the encrypted imaging job to the second node from the first node; and, the second node decrypting the imaging job using a private key corresponding to the public key. The analyzed imaging job information used for access control may include user ID, job content, first node ID, first node communication address, imaging job access control, time/date, imaging job size, or imaging job options.