Abstract: A method for producing printed circuits utilizing direct printing methods to apply a pattern mask to a substrate. The direct printing methods include correcting positional errors in a printing apparatus by ascertaining the errors in the printer through comparison of a printed pattern and a known standard pattern. Printer inputs are manipulated to compensate for the ascertained errors of the printer. The pattern mask applied by the corrected printer may be an etch resist mask for forming conductive pathways by an etching process, or the pattern mask may be a plating mask with conductive pathways being formed by a plating operation. The process of the present invention is applicable to forming both single-sided and double-sided printed circuit boards.

Abstract: A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat.

Abstract: A coaxial plug member comprises a housing, an inner contact, an outer contact and an insulating piece which is arranged between the inner and outer contacts. The outer contact is pivotally attached to the housing, as a result of which also the insulating piece received in the outer contact and the inner contact received in the insulating piece are able to pivot as a unit.

Abstract: In a filter for an organic EL panel formed by a quarter-wave layer (&lgr;/4 plate), a polarizing layer and an anti-glare layer, the polarization of the polarizing layer is between 50% and 70%, and the haze value of the anti-glare layer is between 5% and 15%.

Abstract: In a semiconductor laser diode module including a semiconductor laser diode having a front facet for emitting a light beam, a collimating lens for receiving the light beam to generate a collimated light beam and a coupling lens for receiving the collimated light beam and converging the collimated light beam to an optical fiber, a bandpass filter is provided for receiving a first part of the collimated light beam, and a light detector is provided to have a first portion for receiving the first part of the collimated light beam through the bandpass filter and a second portion for receiving a second part of the collimated light beam. Thus, a wavelength of the semiconductor laser diode is controlled in accordance with an output signal of the first portion of the light detector, and a light intensity of the semiconductor laser diode is controlled in accordance with an output signal of the second portion of the light detector.

Abstract: Controlled quantities of powdered medication are formed in controlled release packages using electrostating metering. Also provided are combination medication therapy delivery packages comprising two or more active pharmaceuticals segregated from one another in a single delivery package.

Abstract: Color filters of R, G and B consisting of a negative resist film are simultaneously exposed by use of a photomask intercepting light for the regions connected to the transparent pixel electrodes after the source electrodes. Then, the color filters are simultaneously developed. Since the color filters consist of a negative resist film, the regions of the color filters corresponding to the light-intercepted regions, that is, the regions connected to the transparent pixel electrodes after the source electrodes are removed by the development, so that openings are formed.

Abstract: A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the channel layer and the field plate, the distance between the Schottky contact and the drain and the length of the field plate falls within the range of 300 nanometers to 600 nanometers thick, the range from 800 nanometers to 3000 nanometers long and the range of the distance between the Schottky contact and the drain is plus or minus 400 nanometers, respectively, so that the distortion and the return-loss are improved without sacrifice of the withstanding voltage.

Abstract: A method for the fabrication of a filter in a frame where a pre-formed pleated filter matrix is inserted into an injection mold tool. Then a suitable elastic thermoplastic material is injected into the tool. The amount of elastic thermoplastic material injected is less than the available space between the filter matrix and the tool so that the pressure will rapidly drop as the material flows from the point of injection.

Abstract: A Nb3Al superconducting wire and method for fabricating the same wherein Nb and Al powders in combination, or Nb—Al alloy powders are encapsulated in a metal tube, preferably copper or copper-alloy (e.g., CuNi), and the resultant composite is processed by conventional means to fine wire. Multifilamentary composites are produced by rebundling of the powder-filled wires into metal tubes followed by conventional processing to wire of a desired size. It is required for the use of Nb and Al powders in combination that the Nb and Al powder particle size be less than 100 nm. In the use of Nb—Al alloy powders, it is preferred, but not required, that the powder particle size be similarly of a nanometer scale. The use of nanometer-scale powders is beneficial to wire fabrication, allowing the production of long wire piece-lengths. At final wire size, the wires produced by practice of the present invention are heat treated at temperatures below the melting point of copper (1083° C.

Abstract: A data storage device is provided which stores audio/video data to a disk media with a small amount of buffer memory and improves response with a reduced cost. Data transmission timing is known from a DMA request signal (DREQ) and a DMA acknowledgement signal (DACK). Therefore, audio/video data from an encoder can be directly supplied to an interface device without being temporarily stored in a buffer memory located before the interface device.

Abstract: To predict residual settlement quantity and residual horizontal deformation quantity of ground where a liquefaction phenomenon has occurred due to earthquake. Soils in situ (stratum B to stratum D) are sampled from ground, and are made to be element test object stratums. A stratum whose characteristic is well-known, or the like may be substituted for a numerical model (stratum A). Next, setting of input conditions is performed, and vertical stress, horizontal stress and initial shear stress, which are equivalent to applied load that the ground at a depth of the point suffers, are worked on to each stratum. This recreates a stress status of soil before earthquake occurs. Then, shear displacement and the movement quantity of interstitial water by earthquake are given to the test piece, and the quantity of shear stress and pore water pressure, which have occurred, is obtained.

Abstract: A semiconductor device comprises: an insulating flexible film capable of changing its profile; first and second conductive layers provided on both surfaces of the flexible film and constituting wiring patterns; an LSI mounted on the first conductive layer; a conductor provided in a hole formed in the flexible film and making connection between the wiring pattern formed in the first conductive layer and the wiring pattern formed in the second wiring pattern; a stiffener; and a heat spreader. A part of the wiring pattern constituted by each of the first conductive layer and the second wiring pattern is a conductive wiring, whose characteristic impedance is previously calculated, for a high-speed signal and a connection portion for making connection to a mother board is provided on an end of the conductive wiring for a high-speed signal.

Abstract: A process for imaging a lithographic printing plate having a presensitizing coating. An ink jet printer is used to apply imagewise micro drops of an insolubilizing solution that insolubilizes exposed areas of the coating. The latent image is then developed. The process works with conventional, commercially available developing processors.

Abstract: The present invention provides an organic EL element and a manufacturing method therefor, which can reduce the number of steps and the cost required for manufacturing the organic EL element, and which can improve the reliability of the organic EL element, by preventing a short circuit, the breaking of a cathode, and the like. The organic EL element includes a plurality of transparent electrodes arranged in parallel on a base plate, a plurality of cathodes disposed above organic layers so as to cross the transparent electrodes, organic layers including light emission layers and disposed between the transparent electrodes and the cathodes, and an insulating organic layer disposed in spaces between adjacent transparent electrodes. The manufacturing method includes the steps of forming the transparent electrode, the insulating organic layer, the organic layer, and the cathode, which are carried out in a vacuum state.

Abstract: An organic EL element including an anode and a cathode opposing each other, and having a luminescent layer positioned therebetween, including an aromatic amine derivative designated by a general formula [1] and a dibenzo-{[f,f′]-4,4′,7,7′-tetraphenyl}-diindeno-[1,2,3-cd:1′,2′, 3′-lm] perylene derivative designated by a general formula [2]. The organic EL element has excellent luminescent efficiency, brightness and chromaticity.

Abstract: The object of the present invention is to realize a motion vector search apparatus and method that is able to perform highly accurate motion vector searching even in images containing discontinuous motion relative to encoded images immediately before. According to the present invention, global motion vector search unit searches for a global motion vector by evaluating differences between pixels at the same location of an input image and an NR reference image in the form of an input image input one frame earlier that is held in original image memory. CPU then determines the motion vector search area based on the results of this global motion vector search, and sets that range in motion vector search unit. Motion vector search unit then searches for and determines a motion vector from previously encoded reference images held in frame memory that are the same as the encoded image held in frame memory over the motion vector search area set by CPU.

Abstract: A hose having clamps secured at opposing ends is disclosed. The clamps provide a compressive force to secure the hose to an appropriately sized tube. A portion of the clamp is disposed between an inner surface and an outer surface of the hose to help prevent accidental removal. A portion of the clamp may extend out an opening expending from a passageway formed between the inner and outer surface. The openings at the opposing end of the hose may be rotational aligned relative to each other and optionally to curves in the hose itself.

Abstract: In a semiconductor memory device, a memory cell array has an even bank activated based on even numbered addresses and an odd bank activated based on odd numbered addresses. Even read data is outputted from the even bank in response to a first control signal, and odd read data is outputted from the odd bank in response to the first read control signal. A relaying unit receives the even read data on the first even data bus to output the even read data to the second even data bus in response to a second read control signal, and receives the odd read data on the first odd data bus to output the odd read data to the second odd data bus in response to the second read control signal. An I/O circuit receives the even read data from the second even data bus and the odd read data from the second odd data bus, and outputs one of the even read data and the odd read data to the common data bus and then outputs the other to the common data bus, in response to a third read control signal.