Abstract: A semiconductor memory device is disclosed that realizes the external-8K Ref/internal-4K Ref standard without lengthening the refresh cycle. Successive selection and simultaneous activation of two normal word lines that do not belong to the same mat is first carried out while preventing replacement by redundant word lines by activating a redundancy non-access signal; following which successive selection and simultaneous activation of two redundant word lines that do not belong to the same mat is carried out while preventing the activation of normal word lines by activating a redundancy access signal. Since the refreshing of normal word lines and refreshing of redundant word lines are each performed while preventing replacement of normal word lines by redundant word lines, two word lines in the same mat are not simultaneously activated even though two word lines are refreshed by means of one refresh command.

Abstract: A process and osteodensitometry system using a dual-energy cone beam of X-rays is described. The system comprises an X-ray source capable of supplying a cone beam of X-rays with at least a first energy called the high energy and a second energy called the low energy, a two dimensional X-ray detector and electronic processor for processing images supplied by the detector. According to the process, a low energy image of a part of the anatomy of a patient, and a high energy image of the same part of the anatomy of a patient are acquired, and the images acquired at low energy and at high energy are matched before building up the map of bone densities of the part of the anatomy.

Abstract: Light is emitted to each of right and left eyes, the emission of light is controlled according to light stimulation steps defined by a combination of light intensities and light emission times, and presence or absence of reaction of a test subject to light is detected at the respective stimulation steps.

Abstract: A knee and foot protective support device is provided for removing pressure from the knees, legs and feet of a person who is kneeling. The device includes a rigid frame having a back portion, a front portion, a side panel and a foot panel. The front portion of the frame has a top section and a bottom section. Padding is attached to the back portion and provides support for the knee, front portion of the leg and foot. A plurality of securing members are attached to the frame for removably securing the device to the leg.

Abstract: A plasma display panel is provided with a transparent substrate, and scanning electrodes and sustaining electrodes formed on the transparent substrate extending in a first direction. An area of the scanning electrode is smaller than an area of the sustaining electrode in each of display cells. The widths of the scanning electrode and the sustaining electrode in a second direction crossing the first direction are substantially equal to each other.

Abstract: A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.

Abstract: A process for imaging a lithographic printing plate having a coating containing diazo resins. An ink jet printer is used to apply micro drops of a basic chemical solution that insolubilizes the affected areas of the coating to a developing solution. The latent image may be cured by heating the plate for a short period, and is then developed. The process works with conventional, commercially available lithographic plates and developers.

Abstract: A semiconductor device equipped with a TAB (tape automated bonding) tape. A desired pattern of wiring is formed on one surface of the TAB tape and a semiconductor chip having two or more chip electrodes is disposed on the other surface of the TAB tape. The wiring and the chip electrodes are electrically interconnected via bumps that are formed in through-holes of the wiring in conforming relationship with the chip electrodes. This prevents fault connection between the chip electrodes and the bumps.

Abstract: An electrode structure with white balance adjustment for plasma display panel is described. The electrode structure has a comb electrode, a first transparent electrode and a second transparent electrode. The first transparent electrode and the second transparent electrode are separated from the comb electrode, respectively. Changing the profile of the first transparent electrode and the second transparent electrode increases the flexibility of the transparent electrodes. Further, the width of the first electrodes responsive to the luminous regions is adjusted to control the luminance through the first transparent electrode so that white balance of the plasma display panel is precisely corrected.

Abstract: A manufacturing method of the present invention comprises the steps of patterning to form a gate electrode pattern as well as an oxide film pattern by applying dry etching to a layered film which is formed, on a semiconductor substrate, of an oxide film and a SiGe film, being laid in this order; a first cleaning wherein, after the step of the patterning, the semiconductor substrate is cleaned with a first cleaning solution containing hydrofluoric acid; and a second cleaning wherein, after the step of the first cleaning, the semiconductor substrate is cleaned with a second cleaning solution containing ammonia and hydrogen peroxide.

Abstract: In forming a metal oxide dielectric film of perovskite type for capacitor, an array of lower electrodes and a crystallization-assisting conductive film are simultaneously formed. The crystallization-assisting conductive film is formed outside the lower electrode array, at a distance of about 10 &mgr;m or less from the outermost lower electrodes, in a width of 20 &mgr;m or more. Then, a metal oxide dielectric film is formed thereon. Since the crystallization-assisting conductive film assists the crystallization of metal oxide dielectric film, capacitor elements which are superior in properties and reliability even when the capacitor elements are produced in a fine structure is obtained.

Abstract: A clock control circuit comprises a control circuit 102 for outputting a control signal for adding or subtracting a phase to a reference clock, which is an input clock or a clock generated from the input clock, on each clock period of the reference clock, and a phase adjustment circuit 101 fed with the input clock and outputting an output clock having the phase adjusted to the reference clock.

Abstract: A clock control circuit comprises a control circuit 102 for outputting a control signal for adding or subtracting a phase to a reference clock, which is an input clock or a clock generated from the input clock, on each clock period of the reference clock, and a phase adjustment circuit 101 fed with the input clock and outputting an output clock having the phase adjusted to the reference clock.

Abstract: A PLL circuit is disclosed which extracts phase difference information of a high S/N ratio from a readout signal uses the phase difference information for PLL control. An A/D converter samples the input signal to produce a digital signal. A pattern string detector identifies a type of an input pattern string formed from a plurality of successive sample values successively outputted from the A/D converter and outputs pattern string identification information which indicates an identification result. A phase difference generator outputs phase difference information which indicates a phase error of the output of the A/D converter based on the pattern string identification information and the output of the A/D converter. A loop filter, a D/A converter and a voltage controlled oscillator generate a clock signal from the phase difference information to control the sampling timing of the A/D converter.

Abstract: Disclosed is a device and a method for enabling a programmable semiconductor memory device to provide a block selection transistor of a high voltage withstand type, to prevent the voltage from being decreased at the time of programming, to prevent the readout current from being decreased and to provide a constant sum resistance of the electrically conductive regions without dependency upon the memory cell locations.

Abstract: An object is to reduce impact load applied on a bonding subject at the time of wire contact detection and achieve a stable and highly precise fabrication of a bonding ball so as to shorten the bonding time. A wire bonding arm comprises: a Z driving shaft supported by a Z-axis base capable of swinging via a first shaft; and a low pressurizing shaft with a smaller inertia than that of the Z driving shaft having a capillary, which is supported on one end of the Z driving shaft to be capable of swinging via a second shaft. The capillary is brought down by the Z driving shaft to the position of the height right before an initial ball comes to contact with a first bonding point. Then, only the low pressurizing shaft is driven at low speed to be brought down while holding the Z driving shaft in position. At the point where the initial ball comes in contact with the first bonding point, a prescribed weight and ultrasonic vibrations are applied for bonding it to the first bonding point.

Abstract: Alignment marks are formed when source and drain electrodes of a TFT are formed and thereon a thick red filter in formed. So that, the following respective color layers can be made thin on the red filter. Also, the exposure alignment laser permeates in an exposure step, and thereby the alignment marks can be accurately detected.

Abstract: In an optical head for use in an optical data recording/reproducing apparatus of the present invention, light emitted from a semiconductor laser is split into a main beam that is zeroth order light and sub-beams that are plus and minus first-order diffracted light. A focus error signal is detected from each of the main beam and sub-beams. A diffractive optical lens causes the main beam and sub-beams to differ in light intensity distribution from each other when incident to an objective lens. As a result, when a disk or optical recording medium has a thickness error, the focus error signal derived from the main beam and focus error signals derived from the sub-beams differ in zero-crossing point from each other. The thickness error is detected on the basis of the difference between the zero-crossing points.

Abstract: A driver circuit substrate is prepared and a mirror substrate is so provided as to be placed on the driver circuit substrate. Nine mirror elements are lad out on the mirror substrate in a 3×3 matrix form. The mirror elements are prepared by a microelectromechanical system (MEMS). An insulating substrate is provided on the driver circuit substrate and a driver circuit which drives a light reflecting mirror element is provided on the insulating substrate. The driver circuit substrate is connected to the mirror substrate via a resin layer of a thermosetting adhesive or the like.