Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.
Type:
Grant
Filed:
October 21, 2003
Date of Patent:
August 31, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
In-kyeong Yoo, Chang-wook Moon, Dong-wook Kim
Abstract: A method of manufacturing a semiconductor device having a self-aligned contact includes providing a semiconductor substrate having a self-aligned contact region and a non-self-aligned contact region, forming a first insulating layer on the semiconductor substrate, forming a plurality of conductive patterns on the first insulating layer, forming sequentially second, third and fourth insulating layers over the entire surface of the semiconductor substrate, etching the fourth insulating layer to form spacers on sidewalls of the conductive patterns, forming sequentially fifth and sixth insulating layers over the entire surface of the semiconductor substrate; and etching the sixth insulating layer using a portion of the fifth insulating layer over the self-aligned contact region as an etch stopper, and etching the fifth insulating lever to form a self-aligned contact.
Type:
Grant
Filed:
April 10, 2003
Date of Patent:
August 31, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jun Seo, Tae-Hyuk Ahn, Myeong-Cheol Kim
Abstract: A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
Type:
Grant
Filed:
December 12, 2002
Date of Patent:
August 24, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Wan-jun Park, Tae-wan Kim, I-hun Song, Sang-jin Park, Richard J. Gambino
Abstract: An output control signal generating circuit in a synchronous semiconductor memory device preferably comprises 1) a plurality of selectable clock signal transfer circuits for selectively delaying an applied clock signal in order to generate an output control clock signal in response to a predetermined CAS latency signal, wherein each one of the plurality of selectable clock signal transfer circuits inserts one or more time delays into the output control clock signal, 2) a sampling circuit for generating a plurality of output signals from a read master signal, and 3) a selection circuit for selecting one of plurality of output signals, thereby indicating a valid data output time interval. A method for operating the output control signal generating circuit causes a clock signal to be delayed by a selectable number of additional clock cycles, thereby insuring the outputting of a data signal only at a time when the data is valid.
Abstract: A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
Abstract: A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water. When an organic material is spattered to adjacent equipment during implementing a coating process onto a wafer, the equipment is detached and then is dipped into the cleaning solution. Thereafter, the equipment is rinsed and dried. Cured and non-cured organic materials are advantageously removed. Cured organic materials left for a period of time, particularly anti-reflective layer components are advantageously removed.
Type:
Grant
Filed:
May 2, 2002
Date of Patent:
August 17, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Dong-Jin Park, Kyung-Dae Kim, Hoi-Sik Chung, Pil-Kwon Jun, Young-Ho Kim
Abstract: A tobacco preparation process having reduced contents of nicotine and tar, wherein dried platycodi radix (broad bellflower), ginseng radix (Panax ginseng) and peach kernel (persicae semen) into tabacco leaves are crushed and cut into a specified piece. Dried playhcodi radix (broad bellflower), ginseng radix (Panax ginseng) and peach kernel (presicae semen) are crushed, Eum-yang-kwak (dried leaves of epimedii herbal tea (Epimedium koreanum)) are cut into the same size as that of the cutted tobacco leaves and mixture of platycodi radix (a broad bellflower), ginseng radix (Panax ginseng) and peach kernel (persicae semen), Eum-yang-kwak (dried leaves of epimedii herbal tea (Epimedium koreanum)) and tobacco leaves at the same proportion.
Abstract: A non-invasive apparatus and method for measuring a temperature of a portion of a living body, includes a signal receiving unit receiving electromagnetic wave signals emitted from the portion of a living body to be measured, a signal processing unit processing the electromagnetic signals input from the signal receiving unit and outputting a radiation power signal, a medium characteristic measurement unit measuring a value of a conductivity or a permittivity of the portion of the living body to be measured and outputting the measured value, and a temperature conversion unit including a computer database storing a plurality of temperature conversion tables with respect to radiation power according to the conductivity or the permittivity of the portion of the living body and determining a corresponding temperature using the measured value of the conductivity or the permittivity of the portion of the living body and the radiation power signal of the signal processing unit.
Type:
Grant
Filed:
March 18, 2003
Date of Patent:
August 10, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Tae-woo Kim, Sang-min Lee, Jeong-whan Lee, Sang-jin Eom, Wan-taek Han
Abstract: Disclosed are methods for forming a conductive film or a conductive pattern on a semiconductor substrate, including nitrifying a semiconductor substrate on which a tungsten film having a partially oxidized surface is formed to form a tungsten nitride film on the surface of the tungsten film, oxidizing the surface of the tungsten film having the tungsten nitride film to change the tungsten nitride film into a tungsten oxy-nitride film, and removing the tungsten oxy-nitride film and any residue generated by a reaction of tungsten from the surface of the tungsten film to form a tungsten film. Complete removal of residues generated by a reaction of tungsten from the surface of the tungsten film is made possible. Therefore, resistance of the tungsten film may be reduced, and failures generated by reacted residues formed on tungsten films may be prevented.
Type:
Grant
Filed:
July 14, 2003
Date of Patent:
August 10, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Ju-Cheol Shin, Hyeon-Deok Lee, Hong-mi Park, In-Sun Park
Abstract: A trifluorostyrene and substituted vinyl compound based partially fluorinated copolymer, an ionic conductive polymer membrane including the same, and a fuel cell adopting the ionic conductive polymer membrane, wherein the partially fluorinated copolymer has formula (1):
where each of R1, R2 and R3 is F, H or CH3; X is a hydroxy group or a trifluoromethyl group; m is an integer greater than zero; n is an integer greater than zero; and p, q and r are zero or integers greater than zero.
Abstract: A polishing head and a chemical mechanical polishing apparatus having the polishing head including a plate having vacuum holes for transferring vacuum pumping force; a porous film having holes corresponding to the vacuum holes and attached to a lower surface of the plate; a retainer ring attached to the lower surface of the plate at an edge portion thereof and having a sloped surface; a clamp ring attached to the lower surface of the plate adjacent the retainer ring for clamping the retainer ring; an adjusting ring having a sloped surface parallel and in contact with the sloped surface of the retainer ring, the adjusting ring being installed between the retainer ring and the plate; and a diameter adjusting device for adjusting a diameter of the adjusting ring by moving the adjusting ring along the sloped surface of the retainer ring, thereby adjusting a height of the retainer ring.
Abstract: A method for preventing process errors in a semiconductor fabricating process allows only a few authorized engineers to release interlocks of semiconductor fabricating equipment when a count of interlock occurrences exceeds a predetermined number within a predetermined period of time. By allowing a semiconductor fabricating equipment operator only limited ability to reset equipment interlocks, repeated interlock conditions caused by test specification failures may be over-ridden only a predetermined number of times before the semiconductor fabricating equipment is disabled completely. The disabled semiconductor fabricating equipment may only be re-enabled using an authorization code, which is only made available to selected personnel, thereby ensuring that necessary repairs and corrections have been implemented on the semiconductor fabricating equipment.
Abstract: An optimum weight estimating apparatus and method of a mobile station for a mobile communication system in which a base station uses closed transmit diversity technology. Conventionally, all weight vectors stored in a lookup table should be applied to an optimum weight estimator to calculate receiving power, so that the amount of calculation considerably increases when there are many antennas. To overcome this problem, the weights of the lookup table are appropriately adjusted so that the variation of the differences between two adjacent vectors can be minimized. An optimum weight is obtained using the difference vector between weight vectors, thereby simplifying the calculation of receiving power. Therefore, the power loss of the mobile station can be minimized.
Abstract: An acetal group containing norbornene-based copolymer useful for a photoresist composition, a method for producing the same, and a photoresist composition containing the same are disclosed. According to the present invention, a copolymer of the present invention has excellent transparency at a wavelength of not more than about 250 nm, excellent resolution, excellent sensitivity, dry etching resistance and excellent adhesion to the substrate.
Type:
Grant
Filed:
April 22, 2002
Date of Patent:
July 13, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jung Han Shin, Bong Seok Moon, Ouck Han, Keun Byoung Yoon, Eun Sil Han
Abstract: The present invention is directed toward a structure and method by which trench isolation for a wide trench and a narrow trench formed in first and second regions of a substrate may be achieved without formation of a void in an isolation layer, a groove exposing an isolation layer, or an electrical bridge between gates in a subsequent process. A lower isolation layer is formed on the substrate in a first and second trench. The lower isolation layer is patterned to fill a lower region of the first trench, and an upper isolation pattern is formed to fill the second trench and a remainder of the first trench. An aspect ratio of first trench is reduced, thereby preventing the occurrence of a void in the upper isolation layer, or a gap between the upper isolation layer and the substrate.
Abstract: Methods and apparatus for varying the number and intensity of beams of a photo-lithographic light source for exposing photoresist materials include beam dividers and beam focusing means. Methods include producing an incident light beam having uniform intensity distribution, refracting the incident light beam into a plurality of divergent beams, refracting the plurality of divergent beams into a plurality of parallel beams, and exposing an object with light of the plurality of parallel beams. Apparatus includes source of light beam having uniform intensity distribution, first refracting element for refracting the light beam into a plurality of divergent beams, second refracting element for refracting the plurality of divergent beams into a plurality of parallel beams, and means for exposing the object with light of the plurality of parallel beams. Variations in the separations of the refractive elements allows for the control of the size, shape, and dispersion patterns of resultant beams.
Abstract: Disclosed are a method for assembling a polishing while inspecting for air leakage in the polishing head and an apparatus for performing the same. By the present invention, a polishing head may be tested for air leakage at each assembly step thereof, so that the polishing head may be assembled free of air leakage, thereby reducing testing time of the polishing head, and failure of the polishing head due to air leakage may be prevented. The apparatus includes a housing supporting the polishing head and having coupling lines coupled with ends of tubes provided in the assembled polishing head, or the polishing head being assembled. A pneumatic pressure regulating section selectively supplies positive pressure or vacuum to the tubes through the coupling lines. A sensor section detects the pressure and level of vacuum in the tubes. A determining section determines if there is air leakage in the polishing head.
Type:
Grant
Filed:
September 30, 2002
Date of Patent:
June 29, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Bong Choi, Jung-Hwan Sung, Yong-Seok Ro, Doeg-Jung Kim
Abstract: An ion implanter having means for scanning an ion beam on a wafer is provided, wherein the scanning means, on which the wafer is mounted, moves the wafer in a region where the ion beam is irradiated. A detecting means, which is fixedly mounted adjacent to the scanning means, detects the ion beam that is overly scanned out of the scanning means. The detecting means has an inclined surface so that a portion of the detecting means adjacent to the scanning means is positioned below a surface of the wafer that is disposed on the scanning means. Accordingly, the ion implanter may prevent the wafer in the scanning means from being polluted with sputtering particles generated from a surface of the scanning means.
Abstract: An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
Type:
Grant
Filed:
June 4, 2002
Date of Patent:
June 22, 2004
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Jung-hyun Lee, Dae-sig Kim, Yo-sep Min, Young-jin Cho
Abstract: A method for fabricating a membrane-electrode assembly, and fuel cells adopting a membrane-electrode assembly formed by the method, wherein the method includes: coating nano-sized catalytic metal particles on a proton exchange polymer membrane by sputtering a catalytic metal source; coating nano-sized carbon particles on the proton exchange polymer membrane by arc discharging or by sputtering a carbon source to form a nanophase catalyst layer; and bonding electrodes to the proton exchange polymer membrane having the nanophase catalyst layer. The nano-sized catalytic metal and nano-sized carbon particles can be coated on a proton exchanger polymer membrane to form a catalyst layer by simultaneously sputtering a catalyst metal source and a carbon source.