Abstract: A light projecting apparatus of a scanner module, including: a substrate, a plurality of light emitting diodes (LEDs), positioned on the substrate and adapted to generate a plurality of incident beams; a diffusion plate, corresponding to the plurality of LEDs, adapted to receive the plurality of incident beams and diffuse the plurality of incident beams uniformly over a scanned object and including: a first plane, receiving the plurality of incident beams; two end faces; connected to the two ends of the first plane in a transverse direction; and a second plane, the two ends thereof being respectively connected to the two end faces, adapted to diffuse the plurality of incident beams uniformly over the scanned object and including: a plurality of second transverse concave portions, adapted to diffuse the plurality of incident beams; and a plurality of second transverse convex portions, adapted to gather the plurality of incident beams, where the plurality of second transverse convex portions and the plurality o

Abstract: The present invention uses the capacitive, inductive, or resistive impedance component to constitute the first impedance, and uses the inductive impedance component and capacitive impedance component which produce parallel resonance after parallel connection to constitute the second impedance, whereby the first impedance and the second impedance are series connected for inputting pulsed DC power, and the divided power thereof is rectified to drive the uni-directional light emitting diode.

Abstract: Provided is an optimum resource allocation method in distributed medium access control in a wireless personal area network, including: defining needed parameters in advance; calculating an overhead AckOverhead needed for an acknowledgement policy and calculating an overhead MasOverhead generated per medium access slot by using the calculated overhead AckOverhead and an amount of the medium access slots which remain after transmitting a frame; calculating the number of frame bits to be transmitted per superframe; determining the number of medium access slots primarily needed per the superframe by using the calculated number of frame bits and the calculated overhead MasOverhead generated per the medium access slot; and optimizing the number of medium access slots finally needed per the superframe.

Abstract: The present invention relates to a delay-locked loop-based multiphase clock generator that generates a plurality of multiphase clocks from an input clock signal using a voltage controlled delay line including a plurality of dummy cells. The delay-locked loop-based multiphase clock generator includes an anti-harmonic lock circuit that receives an input clock and a reference clock of multiple clocks, determines whether a pulse signal derived from the input clock is within a normal locking range of the reference clock, and outputs a compulsory control signal to compulsorily control an output signal of a phase detector if it is determined that the pulse signal is not within the normal locking range.

Abstract: The present invention comprises of a first impedance constituted by the capacitive impedance and a second impedance constituted by the inductive impedance, wherein the first and second impedance after series connection appears in the series resonance status to generate a bi-directional divided power in series resonance to drive the bi-directional conducting light emitting diode parallel connected with the first or second impedance.

Abstract: Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.

Abstract: A reflective film thickness measurement method includes reading an original spectral image of a thin film measured by a broadband light source passing through a measurement system, transforming the original spectral image into a broadband reflectance wavelength function and then into a broadband frequency-domain function, dividing the broadband frequency-domain function by a single-wavelength frequency-domain function to obtain an ideal frequency-domain function, inverse-transforming the ideal frequency-domain function into an ideal reflectance wavelength function, and performing a curve fitting on the ideal reflectance wavelength function and a reflectance wavelength thickness general expression, so as to obtain a thickness of the thin film. A spectral image spatial axis direction processing method is performed to eliminate optical aberration in a deconvolution manner, so as to obtain spectral images of high spatial resolution.

Abstract: The present invention includes a swinging switching structure of outlet device fixed below a shower body, a water-dividing body sealed and fixed above an outlet device; said water-dividing body having at least two water-dividing bores so as to connect to the water cavities with different function of said outlet device having a movable switching device in the shower, and by the co-operation of shower and water-supply pipe-joint, when flapped, the shower will swing and inclined, then the movable switching device will control the water to spray out through different bores of water-diving body, thus achieving the switching of function. This water switching function of the shower is more efficient and flexible.

Abstract: An integrated circuit, in which the influence of parasitic capacitance between a semiconductor substrate and a resistor and between the semiconductor substrate and a capacitor can be inhibited, and a DC-DC converter provided with the integrated circuit. A shielding layer of an n-type semiconductor is formed between a p-type semiconductor substrate and a resistor formed thereon and between the semiconductor substrate and a capacitor formed thereon. A point BOOT is connected to the shielding layer, at which an electric potential changes in the same way as a change in the reference potential of a functional circuit carrying out a specified operation by using the resistor and the capacitor.

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract: A bipolar (dis)charge LED drive method and circuit thereof which is having a diode connected in series of forward polarity with an light emitting diode before being connected in parallel with a bipolar capacitor of the same polarity to constitute the first component, and having a diode, a capacitor and an optional light emitting diode to constitute the second component; the first and second components are connected in series of reversed polarity to be driven by AC, or DC power capable of periodical exchange polarity.

Abstract: A multi-chip package type semiconductor device includes an insulating substrate having first and second conductive patterns thereon, a first semiconductor chip on the insulating substrate and having a first terminal pad and a relay pad isolated from the first terminal pad. The device further includes a second semiconductor chip on the first semiconductor chip having a second terminal pad. The first semiconductor chip is connected to the first pattern by a first bonding wire. The second semiconductor chip is connected to the second pattern by a second bonding wire, which connects the second pattern to the relay pad, and a third bonding wire, which connects the relay pad to the second terminal pad. The lengths of the first, second and third bonding wire are approximately the same.

Abstract: An organic semiconductor light emitting device wherein efficiency of injecting a carrier from an organic semiconductor active layer to an organic semiconductor light emitting part is improved. The organic semiconductor light emitting device includes the organic semiconductor active layer having a source area and a drain area set at an interval of a channel length, a source electrode joined to the source area, the organic semiconductor light emitting part joined to the drain area, a drain electrode joined to the organic semiconductor light emitting part, and a gate electrode arranged to face the organic semiconductor active layer with an insulating film interposed. The organic semiconductor light emitting part includes an organic semiconductor light emitting layer which receives electrons and holes from the drain electrode and holes from the drain electrode and the organic semiconductor active layer and generates light by recombination of the electrons and the holes.

Abstract: The present invention uses the capacitive impedance component to constituted the first impedance and the inductive impedance component to constituted the second impedance, which is characterized as that the first and second impedances in series connection is configured to appear series resonance with the inputting bi-directional power to form a bi-directional divided power, thereby using the bi-directional divided power to drive the bi-directional conducting light emitting diode in parallel connection with the first impedance and second impedance.

Abstract: Provided is a field emission display (FED) capable of driving on the basis of current and preventing leakage current caused by thin film transistors (TFTs). The FED includes: a plurality of unit pixels including an emission element in which cathode luminescence of a phosphor occurs and a TFT for driving the emission element; a current source for applying a scan signal to each unit pixel; and a voltage source for applying a data signal to each unit pixel. Here, the on-current of the current source is high enough to take care of the load resistance and capacitance of a scan row within a given writing time, and the off-current of the current source is so low that the electron emission of each pixel can be ignored. In addition, the pulse amplitude or pulse width of the data signal applied from the voltage source is changed, and thereby the gray scale of the display is represented.

Abstract: A method for fabricating a liquid crystal display (LCD) is provided. The method includes the steps stated below. At first, providing an LCD panel including a first substrate, a second substrate and a liquid crystal layer therebetween. The liquid crystal layer includes several photo-sensitive monomers and several liquid crystal molecules. The LCD panel has at least a first pixel and a second pixel. Afterwards, correspondingly driving the first pixel and the second pixel by the first voltage and the second voltage. At last, applying a ultra-violet source onto the LCD panel to enable several photo-sensitive monomers to polymerize several alignment polymers on the first substrate and the second substrate.

Abstract: Provided are a terahertz wave transmission and reception (Tx/Rx) module package and method of manufacturing the same. The complete and separate terahertz wave Tx/Rx module package is implemented by simply aligning a silicon ball lens, a photoconductive antenna and a focusing lens, and thus facilitates generation or measurement of a terahertz wave. The terahertz wave Tx/Rx module package and method can remarkably reduce time and cost required to build a terahertz wave generation and measurement system, and simplify and miniaturize the terahertz wave generation and measurement system. In addition, characteristics of a terahertz wave generated by the photoconductive antenna can be simply measured. Furthermore, the terahertz wave Tx/Rx module package can be stored and transported with a photoconductive antenna, a silicon ball lens and a focusing lens kept aligned as they are, and also it is possible to minimize pollution of terahertz wave devices caused by surroundings.