Abstract: It is described a programming method for a multilevel memory cell able to store a plurality of bits in a plurality of levels. The method comprises the phases of: initially programming a cell threshold value to a first set of levels [0;(m−1)] being m a submultiple of the plurality of levels of the multilevel cell; reprogramming without erasing another set of levels [m;(2m−1)] containing the same number m of levels as the first set; reiterating the reprogramming without erasing phase until the levels of the multilevel cell are exhausted. It is also described a multilevel memory device of the type comprising a plurality of multilevel memory cells organized into sectors, the sectors being themselves split into a plurality of data units wherein a data updating operation is performed in parallel, the data units being programmed by means of the programming method.

Abstract: The cells of the stacked type each comprise a MOS transistor formed in an active region of a substrate of semiconductor material and a capacitor formed above the active region; each MOS transistor has a first and a second conductive region and a control electrode and each capacitor has a first and a second plate separated by a dielectric region material, for example, ferroelectric one. The first conductive region of each MOS transistor is connected to the first plate of a respective capacitor, the second conductive region of each MOS transistor is connected to a respective bit line, the control electrode of each MOS transistor is connected to a respective word line, the second plate of each capacitor is connected to a respective plate line. The plate lines run perpendicular to the bit line and parallel to the word lines. At least two cells adjacent in a parallel direction to the bit lines share the same dielectric region material.

Abstract: The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure. The device includes a semiconductor substrate doped with impurities of the P type; a first buried layer doped with impurities of the N type to form a base region; and a second layer, overlying the first and having conductivity of the N type, to form an active area with opposite collector and emitter regions being formed in said active area and separated by a base channel region. The width of the base channel region is defined essentially by a contact opening formed above an oxide layer deposited over the base channel region. Advantageously, the contact opening is formed by shifting an emitter mask.

Abstract: The boost device comprises a charge pump circuit having an input and a main output between which an input stage, an intermediate stage and a main output stage are cascade connected. The charge pump circuit also comprises a stand-by output stage having an input node connected to an output node of said intermediate stage and an output node connected to a stand-by output of the charge pump circuit. The boost device further comprises a phase generator stage having a signal input receiving a suitable clock signal generated by a clock generator stage and output terminals generating phase signals supplied to phase inputs of the charge pump circuit.

Abstract: The data management method applies to a multilevel nonvolatile memory device having a memory array formed by a plurality of memory cells. Each of the memory cells stores a number of bits that is not an integer power of two, for example three. In this way, one data byte is stored in a non-integer number of memory cells. The managing method includes storing, in a same clock cycle, a data word formed by a plurality of bytes, by programming a preset number of adjacent memory cells. Reading is performed by reading, in a same clock cycle, the stored data word.

Abstract: The method for reading a memory cell is based upon integration in time of the current supplied to the memory cell by a capacitive element. The capacitive element is initially charged and then discharged linearly in a preset time, while the memory cell is biased at a constant voltage. In a first operating mode, initially a first capacitor and a second capacitor are respectively charged to a first charge value and to a second charge value. The second capacitor is discharged through the memory cell at a constant current in a preset time; the first charge is shared between the first capacitor and the second capacitor; and then the shared charge is measured.

Abstract: The manufacture process includes: forming a first wafer of semiconductor material housing integrated electronic components forming a microactuator control circuit and a signal preamplification circuit; forming microactuators, each including a rotor and a stator, in a surface portion of a second wafer of semiconductor material; attaching the second wafer to the first wafer, with the surface portion of the second wafer facing the first wafer; thinning the second wafer; attaching the second wafer to a third wafer to obtain a composite wafer; thinning the first wafer; cutting the composite wafer into a plurality of dice connected to a protection chip; removing the protection chip; attaching read/write transducers to the dice; and attaching the dice to supporting blocks for hard-disk drivers.

Abstract: The method for reading a memory cell includes supplying the cell with a first charge quantity through a capacitive integration element and reintegrating the first charge quantity through a plurality of second charge quantities supplied alternately and in succession to the capacitive integration element. In a first embodiment, the second charge quantities are initially stored in a plurality of capacitive charge-regeneration elements connected alternately and in succession to the capacitive integration element; the second charge quantities are then shared between the capacitive integration element and the capacitive charge-regeneration elements.

Abstract: A contact structure for a ferroelectric memory device integrated in a semiconductor substrate and includes an appropriate control circuitry and a matrix array of ferroelectric memory cells, wherein each cell includes a MOS device connected to a ferroelectric capacitor. The MOS device has first and second conduction terminals and is covered with an insulating layer. The ferroelectric capacitor has a lower plate formed on the insulating layer above the first conduction terminals and connected electrically to the first conduction terminals, which lower plate is covered with a layer of a ferroelectric material and coupled capacitively to an upper plate. Advantageously, the contact structure comprises a plurality of plugs filled with a non-conductive material between the first conduction terminals and the ferroelectric capacitor, and comprises a plurality of plugs filled with a conductive material and coupled to the second conduction terminals or the control circuitry.

Abstract: A method of arbitration among a plurality of n units which seek access to a resource is regulated according to grants identified by means of an arbitration method, which compares between one another the priorities, generating, for each pair of the units comprising in general a unit x and a unit y with respective priorities Px and Py, a selection signal at a high level if the result of the operation Px>=Py is true. The method generates, for the pairs of the units, respective cross-request signals and generates the grant for the ith unit as a logical product of all the cross-request signals req_i_z with z ranging from 1 to n, excluding the case of z=i.

Abstract: A method of depositing a dielectric ply structure to optimize the planarity of electronic devices that include a plurality of active elements having gate regions laid across the substrate as discrete parallel lines, such as the bit lines of memory cells. In accordance with the principles of the present invention, the plurality of bit lines may be isolated from one another by the dielectric ply structure to provide a planar architecture onto which an optional conductive layer may be deposited. The resulting planarization avoids the typical shortcomings of the prior art, such as the lack of electrical continuity in the word lines or their excessively high electrical resistance from slenderized portions in the conductive sections due to poor planarity of the surfaces upon which the conductive layer is deposited.

Abstract: A digital frequency divider has a single circulating shifter register loaded with a bit sequence of variable length and having two outputs adjacent such that are output is equal to the other delayed by one clock period. The outputs are passed to a multiplexer via further logic, the multiplexer selecting one of two inputs depending on whether a clock is high or low. Program logic is provided so that the circuit is configurable for odd, even or half integer division by detecting changes in the bit sequence between 0 and 1 and selectively “deleting” the first half clock cycle when a change is detected. This allows even, odd or half integer clock division with an “even” mark space ratio.

Abstract: A voltage/current controller device, particularly for interleaving switching regulators, comprises: a DC/DC converter having a plurality of modules, with each module including a drive transistor pair connected in series between first and second supply voltage references, a current sensor connected to one transistor in the pair, and a current read circuit connected to the sensor. Advantageously, the read circuit comprises a transconductance amplifier connected across the current sensor to sense a voltage signal related to a load current being applied to each module, the transconductance amplifier reading the voltage signal with the transistor in the conducting state.

Abstract: A process fabricates a vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate.

Abstract: A current amplifier includes an input branch having a first input; an output branch coupled to said input branch; a bias branch suitable for biasing said input branch. The input branch comprises at least one switch commanded by a first bias voltage supplied by said bias branch so as to substantially block the current flowing in said input branch and consequently substantially block the current flowing in said output branch when the current applied to said first input is null.

Abstract: A hard disk read/write unit is formed in a monolithic body of semiconductor material, including a suspension structure, a coupling or flexure element integral with the suspension structure, and a microactuator, integral with the coupling. The monolithic body has a first portion accommodating integrated electronic components, and a second portion, accommodating the coupling and the microactuator. The coupling is formed from a central region, accommodating the microactuator; an annular region, separated from the central region by a first trench, and from the suspension by a second trench; a first pair of suspension arms, extending between the central region and the annular region, along a first axis; and a second pair of suspension arms, extending between the annular region and the suspension structure, along a second axis perpendicular to the first axis.

Abstract: The buffer has an output stage formed by two complementary MOS transistors connected so as to operate in phase opposition between the supply terminals and two driver stages having the input in common. Each driver stage has a first branch comprising a current-generator connected between the gate electrode of the transistor to be driven and a supply terminal and an electronic switch controlled by the input and connected between the same gate electrode and the other supply terminal, and a second branch which comprises, connected in series, a transistor connected as a diode and an electronic switch controlled by the output, and is arranged between the gate electrode of the transistor to be driven and a respective supply terminal. The buffer can control a load with a constant switching current, is simple in structure, and occupies a small area.

Abstract: A circuit for splitting poles between a first stage and a second inverting voltage-amplifier stage of an electronic circuit, comprises, in series between the output of the first stage and the output of the second stage, and in that order, a first capacitor, a second capacitor and a resistor. The circuit further comprises a voltage-divider bridge which is connected between a terminal delivering a substantially constant voltage and the output of the first stage. The output of the voltage-divider bridge is linked to the common node between the first capacitor and the second capacitor, in such a way that a first resistor of the voltage-divider bridge is connected in parallel with the first capacitor.

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract: The integrated electronic device comprises a protection structure of metal, extending vertically and laterally to and along a predominant part of the periphery of an electronic component integrated underneath the pad region. The protection structure comprises a substantially annular region formed from a second metal layer and absorbing the stresses exerted on the pad during wire bonding. The annular region may be floating or form part of the path connecting the pad to the electronic component.