Abstract: An amplifier used in a tuner of video and/or audio equipment has to amplify the received input signal but should add as little as possible noise and distortion to the amplified signal. To improve the operation of the amplifier and includes tuner, the amplifier of the at least two gain stages and switches for short-circuiting a gain stage when it is not necessary for the overall gain value.

Abstract: A gripping device for positioning a component (47) on a substrate, comprising three fingers (1, 2, 3) arranged in a triangle (7), and a drive device for moving the fingers along parallel paths (4, 5, 6) relative to each other to grip or release a component. A middle finger (2) is movable in opposite directions with respect to the outer fingers (1, 3).

Abstract: A method of processing a substantially wafer-shaped product in semiconductor technology is described, which product is designed for the formation of a number of electronic circuit bodies over at least a first of its main surfaces, which circuit bodies are to be mechanically separated substantially perpendicularly to the first main surface, and which product has a second main surface lying opposite the first main surface.

Abstract: The invention relates to a device for amplifying electronic signals, including: an amplifier PRA, and a plurality of feedback loops G1, G2 placed between the output and the input of the amplifier, which feedback loops are arranged so that each feedback loop has an adjustable gain and all the feedback loops jointly form an assembly having an equivalent impedance which is substantially independent of the gain settings selected. Thanks to the invention, the amplification bandwidth can be easily adjusted without adversely affecting the performance of the device in terms of noise and high cut-off frequency.

Abstract: A ballast system in which mixed-mode gate signals are used to control the ballast circuit so as to produce a more straight ballast lines such than only a single solution exists between ballast lines and lamp lines over the whole operating range, whereby a stable of lamp performance is achieved. In a preferred embodiment, symmetric and asymmetric modes are arranged alternatively in every other switching cycle to produce mixed-mode PWM gate signals.

Abstract: An illumination module (20) for illuminating an object (10) comprises a number of illumination rings (62, 64, 66) each comprising a number of radiation-generating elements (50) which are all arranged on a flat plate (42). For each ring, a light guide (72, 82, 84) is provided for guiding the radiation from the ring to the exit window (60) where the radiation exits at a range of angles which are specific to said ring. The rings can be switched on individually, so that different kinds of illumination can be realized.

Abstract: The invention relates to a push-pull amplifier having a silent start circuit. To overcome the problem of noise during start up the amplifier of the invention comprises a silent start circuit, which decides the “perfect” moment to start the power switches without the known start-up noise.

Abstract: An electronic circuit for switching an inductive load (10) by way of a bipolar transistor (1) whereby a switching signal is supplied to the base (5) of a switching transistor (1) via an LRC circuit (6, 7, 9). During switching off the LRC circuit (6, 7, 9) causes a peak voltage at the base (5) of the switching transistor (1). The value of the peak voltage is a maximum when the power dissipation of the switching transistor (1) is a minimum. A regulator circuit (12-17) regulates a current source (18) in a primary winding of a switched transformer (22) in such a way that the peak voltage (Vp) is maximized.

Abstract: The invention relates to a method of manufacturing a high-voltage element, in particular, but not exclusively an LDMOS transistor in SOI with a drift region (13) which has a linearly increasing doping concentration between a back-gate region (8) and a drain (6). A doping mask (15) is used for doping the drift region, in which mask the pitch between the windows becomes smaller in the direction from source to drain at least within part of the drift region. This is achieved in an embodiment by means of windows which have identical dimensions but which lie closer together in proportion as they lie closer to the domain. It was found in experiments that a smooth doping profile can be obtained in this manner, so that peaks in the doping, and thus in the electric field, are avoided. The degree of impact ionization is reduced thereby, which benefits the robustness of the transistor.

Abstract: A plurality of peripheral devices are interfaced via a Slave Group Interface device to a bus. This allows for the transfer of clock signals, control signals including select signals, and information bits. In particular, the device ORs peripheral read data according to appropriate bit significance levels. In the absence of a write control signal all peripheral write data are maintained at an inconsequentiality level. Various control signals received from the peripheral devices are parallel-compacted to a compacted bus control signalization.

Abstract: In a method for encoding a non-interlaced signal (60P) into an interlaced signal (60I) and an auxiliary signal, the interlaced signal (60I) is generated in dependence on the non-interlaced signal (60P), and the auxiliary signal is generated by furnishing regeneration coefficients enabling a reconstruction of non-encoded lines (o: D) of the non-interlaced signal (60P) in dependence on the interlaced signal (60I: A, B, C) and the regeneration coefficients. The invention is preferably applied in a method of processing non-interlaced signals by equipment, such as studio equipment, developed for processing interlaced signals.

Abstract: A storage arrangement has a channel for accommodating chip-like electronic components in a predefined order and alignment. Simplified operation is achieved in that the channel between a first and a second end of the storage arrangement is led at least largely along a helical line. A device having such a storage arrangement optionally includes a first sub-assembly for preferably filling the storage arrangement with components and a second sub-assembly for preferably unloading the components, or a combination of the two.

Abstract: In an arrangement for coupling out an output current from a load current by a load (2), particularly a deflection coil of a cathode ray tube by means of an output resistor (4), which arrangement comprises an output current mirror (9, 10, 11), in which a control value in the form of the difference between two voltages dropping across two resistors (35, 36) for controlling the load current is generated and in which a reference current bank (12) is provided with a current mirror circuit whose input receives a constant current for generating constant currents, a minimal temperature dependence is obtained in that the output current is coupled to the emitter of at least a first output transistor (10) and at least a second output transistor (11) of the output current mirror, in that the reference current bank (12) supplies a first reference current which, together with the output current, is coupled to the emitter of the first output transistor (10) and the second output transistor (11) of the output current mirror,

Abstract: In the known method, a semiconductor element (1) is provided with two connecting conductors (2, 3) by arranging, preferably a large number of elements (1) between first and a second conductive plate (5, 6), the two connecting conductors (2, 3) secured at the upper surface and lower surface of an element (1) being formed from the two plates (5, 6). The first connecting conductor (5) is formed from a part (2) of the first plate (5) which borders on an opening (7), and the element (1) is covered with a protective envelope (4). The known method has the drawback that the devices obtained are not always directly suitable for surface mounting. Furthermore, the reliability of the device is sub-optimal.

Abstract: A high-frequency amplifier circuit includes an amplifying transistor and a bias circuit coupled to the amplifying transistor. The bias circuit includes a first bias subcircuit for controlling a quiescent current in the amplifying transistor and a second bias subcircuit for independently controlling a bias impedance of the amplifying transistor. Using this configuration, it is possible to set the gain and class of operation of the amplifying transistor, while independently controlling the bias impedance of the amplifying transistor to obtain improved linearity and tuning capability as well as increased efficiency.

Abstract: A cellular trench-gate field-effect transistor comprises a field plate (38) on dielectric material (28) in a perimeter trench (18). The dielectric material (28) forms a thicker dielectric layer than the gate dielectric layer (21) in the array trenches (11). The field plate (38) is connected to the source (3) or trench-gate (31) of the transistor and acts inwardly towards the cellular array rather than outwardly towards the body perimeter (15) because of its presence on the inside wall 18a of the trench (18) without acting on any outside wall (18b). The array and perimeter trenches (11,18) are sufficiently closely spaced, and the intermediate areas (4a, 4b) of the drain drift region (4) are sufficiently lowly doped, that the depletion layer (40) formed in the drain drift region (4) in the blocking state of the transistor depletes the whole of these intermediate areas between neighbouring trenches at a voltage less than the breakdown voltage.

Abstract: The invention relates to a semiconductor device comprising a bipolar transistor having a collector (1), a base (2) and an emitter (3) at its active area (A). The semiconductor body (10) of the device is covered with an insulating layer (20). At least a part of a base connection conductor (5) and an emitter connection conductor (6) extend over the insulating layer (20) and lead to a base connection area (8) and an emitter connection area (9), respectively. The known transistor is characterized by poor gain, particularly at high frequencies and at high power.

Abstract: A silicon carbide LMOSFET having a self-aligned gate with gate reach-through protection and method for making same. The LMOSFET includes a first layer of SiC semiconductor material having a p-type conductivity and a second layer of SiC semiconductor material having an n-type conductivity formed on the first layer. Source and drain regions having n-type conductivities are formed in the second SiC semiconductor layer. An etched trench extends through the second SiC semiconductor layer and partially into the first SiC semiconductor layer. The trench is coated with a layer of an electrically insulating oxide material and partially filled with a layer of metallic material thereby forming a gate structure. A channel region is defined in the first layer beneath the gate structure. The gate structure is rounded or buried to provide a current path in the channel region which avoids sharp corners.

Abstract: In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accordance with the invention, this first region (1) includes three distinct zones, namely a low-doped zone (23), a high-doped zone (25), and an intermediate additional zone (24). The low-doped zone (23) is provided by a semiconductor body portion (11) having a substantially uniform p-type doping concentration (P−) and forms the p-n junction (12) with the second region (2). The distinct additional zone (24) is present between the low-doped zone (23) and the high-doped zone (25). The high-doped zone (25) which may form a contact zone has a doping concentration (P++) which is higher than that of the low-doped zone (23) and which decreases towards the low-doped zone (23).

Abstract: A telecommunication system includes at least one switching center (1), a plurality of subscriber stations (2, 3) and a call diversion activator (7, 8-11) for automatically activating a call diversion from a first subscriber station (2) to a second subscriber station (3) at predefined instants. To ensure a reliable activation and deactivation of a call diversion also for subscribers who desire a call diversion in time periods ending at variable instants, the first subscriber station (2) includes a signaling device (13) for signaling an activated call diversion to the second subscriber station (3) and a manually operable call diversion deactivator (7, 8-11).