Abstract: A switching circuit incorporating a high voltage transistor protection technique for use in an integrated circuit device having dual voltage supplies which extends the maximum pumped voltage (“VCCP”) for reliable MOS transistor operation to VCCP=VTN+(2*VCC), where VTN is the threshold voltage of the transistor and VCC is the supply voltage level. This is effectuated by adding an additional relatively thick gate oxide transistor in series with the relatively thin gate oxide MOS N-channel transistors in a conventional high voltage switching circuit to increase the reliable maximum voltage for the high voltage power supply.

Abstract: An error-correcting partial latch stage includes a first pass gate having an input for receiving a data input signal, an output, and a control node for receiving a control signal, a second pass gate having an input coupled to the output of the first pass gate, an output for providing a data output signal, and a control node for receiving the control signal, an inverter having an input coupled to the output of the first pass gate and an output; and a correcting inverter stage having a first input coupled to the output of the inverter, and second and third inputs for receiving voting signals from adjacent error-correcting latch stages, and an output coupled to the output of the second pass gate. A full latch stage includes three interconnected partial latch stages. The full latch stage has a high degree of immunity from SEU events and from on-chip noise coupling.

Abstract: A cell generator for UTMC's gate array library of core logic cells is implemented using Cadence® Relative Object Design (ROD) software. The ROD functions use design rules to create and align ROD objects. Design rules can be specified for different foundries and technologies, or can be altered to special design requirements. ROD user-defined handles are created to facilitate internal routing and to accommodate different UTMC architectures. Hierarchy is used to minimize the ROD code, and a Cadence® SKILL Makefile generates the entire library automatically.

Abstract: A warmswap operation to replace modules in a mirrored cache system has been accomplished by disabling mirrored write operations in the cache system; testing the replacement memory module in the cache system; and restoring the mirrored data in the cache system. The restoring operation is accomplished by first quiescing write operations to stop writing data in the cache system not backed up in non-volatile data storage. Then data is copied from surviving memory modules to the replacement module, and the cooperative interaction of the surviving memory modules with the replacement memory module is validated. The validating operation verifies the cache modules are ready and the controllers are synchronized. After validation the quiesced write operations are un-quiesced, and mirrored-write operations for the cache system are enabled.

Abstract: A base cell for a gate array or standard cell integrated circuit design has N and P wells organized in checkerboard fashion, each well containing several P and N devices respectively. A first of the plurality of relatively deep P regions is adjacent to at least a first and a second of the plurality of relatively deep N regions. The first relatively deep N region is adjacent to the first relatively deep P region along a first edge of the first relatively deep N region, and to the second relatively deep P region along a second edge of the relatively deep N region. The first and second edges of the relatively deep N region are perpendicular. An array of the base cells therefore has a checkerboard pattern, unlike the striped pattern of typical gate array and standard cell designs. The array of the base cells is amenable to minimizing clock parasitic capacitance when clocked inverters, including the complimentary clocked inverters of latches, are laid out at vertexes of the checkerboard pattern.

Abstract: An improved transresistance amplifier for generating an output voltage from an input current includes: a current buffer for shifting a dominant pole associated with the input current to a higher frequency, thereby increasing the bandwidth of the transresistance amplifier; a current amplifier for amplifying the buffered input current, thereby generating a high transresistance for the transresistance amplifier; and an I/V amplifier for converting the buffered and amplified input current into the output voltage. The current amplifier includes a current mirror and a current source that draws current from the mirrored side of the current mirror.

Abstract: An integrated data input sorting and timing circuit for double data rate (“DDR”) dynamic random access memory (“DRAM”) devices in which a sorting of the input data into odd/even is integrated with the necessary timing to allow synchronization with the on-chip Y-clock signal (column address select) without the need to provide separate circuits. In those devices having multiple DQS inputs, any skew between DQS pins is allowed as long as no one DQS pin violates the DQS-to-clock (“DQS-CLK”) skew requirements. The circuit and method of the present invention also allows a write to occur at command +2 cycles (last data+½). Functionally, both rising and falling data (i.e., data on the rising and falling edges of DQS) is captured by the DQS inputs and presented in parallel to the chips internal write path and data is passed on the falling edge of DQS.

Abstract: A memory cell layout for use in a 1T/1C ferroelectric memory array includes an access transistor having a gate coupled to a word line and a current path coupled between a bit line and an internal cell node, a shunt word line extending across the memory cell that is electrically isolated from the word line and the access transistor within the physical boundary of the memory cell, and a ferroelectric capacitor coupled between the internal cell node and a plate line.

Abstract: A method, apparatus, computer implemented method and computer programmed product for recovering data from a split sector associated with an inoperable servo timing mark. Instead of using a servo timing mark to synchronize the read/write head to the spin speed variation of a storage media, the trailing end of the data fragment preceding the inoperable servo timing mark is used as a reference point. After detecting the reference point, the read operation is halted a predetermined delay time after which the read operation is resumed recovering the data from the sector relying on the inoperable servo timing mark.

Abstract: A sense amplifier design for DRAM devices (as well as those incorporating embedded DRAM) which provides improved read and write speed without requiring the use of an extra signal line to the gate of a transistor coupling the sense amplifier latch nodes to the associated bit lines. In accordance with the present invention, an additional circuit element is added between the latch nodes and the bit lines which serves as a resistive path therebetween. Functionally, this additional circuit element serves to isolate the latch nodes from the relatively large bit line capacitance during a write operation such that the latch nodes can change state more quickly. These additional circuit elements may take the form of N-channel transistors having their gate tied to a pumped voltage level VCCP, resistors, various configurations of depletion transistors or CMOS pass gates.

Abstract: A small signal, low power read data bus driver for integrated circuit devices incorporating memory arrays which advantageously utilizes non-precharged data lines and reduced output voltage swing to reduce power requirements, tri-stateable outputs to allow several circuits to be multiplexed on the same data line and provides a buffer between the sense amplifier and the data lines to improve data line switching speed.

Abstract: A packet-based dynamic random access memory (“DRAM”) device incorporating an on-chip row register cache which is functional to reduce the initial device latency, reduce “page miss” latency and reduce chip layout overhead by reducing bus sizes and the level of required multiplexing and demultiplexing compared to Rambus® Direct RDRAM™ (trademarks, of Rambus, Inc., Mountain View, Calif.) devices. In accordance with an embodiment of the present invention, the row register cache and a separate write path, or bus, are integrated into each DRAM bank serving to improve DRAM latency parameters and pipeline burst rate. The row register holds “read” data during burst reads to allow hidden precharge and same bank activation to minimize “page miss” latency. The faster pipelined burst rate simplifies Direct RDRAM multiplexer/demultiplexer logic and reduces internal data bus size by 50%.

Abstract: An inductive load driver circuit including a first switch that switches between a conductive state and a non-conductive state selectively applies a first power supply potential to a first side of the inductive load in response to a control signal. A second switch that switches between a non-conductive state and a conductive state selectively applies a second power supply potential to a second side of the inductive load in response to the control signal. The control signal places a control node of the second switch at a lower potential than the second side of the inductive load while the second switch is in the conductive state. In operation, a steady state current in a first direction is driven through the inductive load. The nodes of the inductive load are placed in a high impedance state, after which a steady state current is driven in a second direction through the inductive load.

Abstract: A mechanism for managing a plurality of profile data structures including a plurality of profile objects having an interface for sending and receiving information and a profile service mechanism having an interface for sending and receiving information. A protocol layer operatively coupled to the profile objects interface and the profile service interface, the protocol layer defining a plurality of request elements and a plurality of response elements. A protocol layer interface within the protocol layer receives user-entity specified set of request elements from the user entity and sends a responsive set of response elements to the user entity. A first set of methods within the profile service mechanism that create instances of the profile objects, where each of the first set of methods correspond to one of the request elements and one of the response elements.

Abstract: A bandgap reference circuit has a pre-regulator that achieves a low temperature coefficient through the use of a first component that generates a first voltage having a negative temperature coefficient and a second component coupled in series to the first component and which generates a second voltage having a positive temperature coefficient. This low temperature coefficient in the pre-regulator allows the bandgap reference circuit to output the bandgap voltage VBG with a low temperature coefficient.

Abstract: A low voltage boost circuit suitable for use in a ferroelectric memory is realized implementing five N-channel devices and two ferroelectric capacitors. The voltage on a word line is boosted using charge sharing techniques in order to assure proper operation at lower power supply voltage conditions. In operation, the gate of an N-channel pass gate is boosted to supply a full VDD voltage on the bottom electrode of a ferroelectric capacitor, which capacitively couples into the word line for an efficient word line voltage boost.

Abstract: A negative voltage driver circuit having reduced current flow to the negative supply voltage source and improved reliability comprises first, second and third series coupled switching devices defining an output and intermediate nodes therebetween respectively for coupling a high voltage source to a reference voltage level. Control terminals of the first and second switching devices are coupled to a first circuit node and a control terminal of the third switching device is coupled to a second circuit node. A fourth switching device is coupled between the lower intermediate node and a negative voltage source, with a control terminal of the fourth switching device being coupled to a third circuit node. In operation, the first circuit node is activated, followed sequentially by the second and third circuit nodes, the second circuit node being deactivated substantially concurrently with the activation of the third circuit node.

Abstract: An event correlation system for network management has computer code for at least one model of a process to be run on a node of a network, where said process is intended to be run on a different node of the network than the model. The correlation system also has code for an alarm monitor comparing the apparent behavior of the model to actual events generated by the process and generating alarm messages when the actual events of the process do not match expected events from the model. It also has code for an event correlation utility; and means for communicating alarms from the alarm monitor to the event correlation utility.

Abstract: a firm ware based technique related to managing defective data sector information in a disk drive. Specially, technique provides for a dynamic method by which the number of spare or served alternate sectors and their locations can be allocated in the event defective data sectors exist. One advantage of the present invention exists for certain applications where the capacity and/or configuration of the drive are configured at run time. The present invention also has the advantage of improving performance when accessing “grown” defects by allowing the block relocation information to be placed physically closer to the location of the defective blocks.

Abstract: A driver timing and circuit technique for a low noise charge pump circuit of particular applicability with respect to integrated circuit devices requiring voltage levels either more positive than or more negative than, externally supplied voltages. In accordance with the technique of the present invention, the pump capacitor is driven “high” by one transistor and “low” by another. By correctly sizing the devices driving them, each transistor can be turned “off” quickly and “on” slowly and, in an alternative embodiment, both transistors may be “off” at the same time resulting in “tri-state” operation.