Abstract: The present invention provides methods for selecting a handover algorithm. The methods may include selecting the handover algorithm for a mobile unit based on at least one measurement indicative of a network state. The methods may also include receiving information indicative of the handover algorithm selected based on the measurement(s) indicative of the network state.

Abstract: The present invention provides a method involving a media server, a wireless access network, at least one media client, and a proxy server. The method includes accessing, at the proxy server, at least one message including information indicating impending establishment of a media session between the media server and said at least one media client. The method also includes providing, from the proxy server, information indicating the impending establishment of the media session and a request to receive feedback associated with the media session. The method further includes receiving, at the proxy server, feedback associated with the media session in response to providing the request to receive feedback associated with the media session.

Abstract: In a three-dimensional chip configuration, a heat spreading material may be positioned between adjacent chips and also between a chip and a carrier substrate, thereby significantly enhancing heat dissipation capability. Furthermore, appropriately sized and positioned through holes in the heat spreading material may enable electrical chip-to-chip connections, while responding thermally conductive connectors may extend to the heat sink without actually contacting the corresponding chips.

Abstract: A strain-inducing semiconductor alloy may be formed on the basis of cavities which may have a non-rectangular shape, which may be maintained even during corresponding high temperature treatments by providing an appropriate protection layer, such as a silicon dioxide material. Consequently, a lateral offset of the strain-inducing semiconductor material may be reduced, while nevertheless providing a sufficient thickness of corresponding offset spacers during the cavity etch process, thereby preserving gate electrode integrity. For instance, P-channel transistors may have a silicon/germanium alloy with a hexagonal shape, thereby significantly enhancing the overall strain transfer efficiency.

Abstract: A crosslinked lactic acid polymer composition containing (i) a macromer comprising (i-a) a flexible segment produced by the condensation of two or more compounds selected from the group consisting of lactones, furans, epoxies, isocyanates, anhydrides, dianhydrides, alcohols, diols, triols, carboxylic acids, dicarboxylic acids, tricarboxylic acids, esters, diesters, triesters, ethers, diethers, and triethers; and (ii) a lactic acid polymer produced by the condensation of a lactic acid monomer ordimer selected from the group consisting of D-lactic acid, L-lactic acid, D,L-lactic acid, L,L-lactide, D,D-lactide, and D,L-laclide; wherein the macromer and the lactic acid polymer contain carbon-carbon single-bond crosslinks.

Abstract: The present invention provides a method for assigning a mobile unit to a tracking area based upon a location update frequency. The method includes selecting one of a technology-specific tracking area and a shared tracking area based on a location update frequency associated with a mobile unit.

Abstract: A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used in the contact level of sophisticated integrated circuits, thereby providing high strain levels while not unduly contributing to signal propagation delay.

Abstract: A system for pumping fluid (e.g., but not limited to, drilling fluid), the system having pump apparatus; including a plurality of removable pump modules; and, in certain aspects, removable valve cartridges for such modules.

Abstract: In advanced SOI devices, a high tensile strain component may be achieved on the basis of a globally strained semiconductor layer, while at the same time a certain compressive strain may be induced in P-channel transistors by appropriately selecting a height-to-length aspect ratio of the corresponding active regions. It has been recognized that the finally obtained strain distribution in the active regions is strongly dependent on the aspect ratio of the active regions. Thus, by selecting a moderately low height-to-length aspect ratio for N-channel transistors, a significant fraction of the initial tensile strain component may be preserved. On the other hand, a moderately high height-to-length aspect ratio for the P-channel transistor may result in a compressive strain component in a central surface region of the active region.

Abstract: A high yield plasma etch process for an interlayer dielectric layer of a semiconductor device is provided, according to an embodiment of which a dielectric layer is etched with a nitrogen-containing plasma. In this way, the formation of polymers on a backside bevel of a substrate is avoided or substantially reduced. Remaining polymer at the backside bevel can be removed in situ by post-etch treatment. Further, a plasma etching device is provided comprising a chamber, a substrate receiving space for receiving a substrate, a plasma generator for generating a plasma in the chamber and a temperature conditioner for conditioning a temperature at an outer circumferential region of the substrate receiving space and thereby minimizing temperature gradients at a bevel of the wafer.

Abstract: By forming an appropriate material layer, such as a metal-containing material, on a appropriate substrate and patterning the material layer to obtain a cantilever portion and a tip portion, a specifically designed nano-probe may be provided. In some illustrative aspects, additionally, a three-dimensional template structure may be provided prior to the deposition of the probe material, thereby enabling the definition of sophisticated tip portions on the basis of lithography, wherein, alternatively or additionally, other material removal processes with high spatial resolution, such as FIB techniques, may be used for defining nano-probes, which may be used for electric interaction, highly resolved temperature measurements and the like. Thus, sophisticated measurement techniques may be established for advanced thermal scanning, strain measurement techniques and the like, in which a thermal and/or electrical interaction with the surface under consideration is required.

Abstract: By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced.

Abstract: A method comprises providing a semiconductor structure. The semiconductor structure comprises a feature comprising a first material and a layer of a second material formed over the feature. The semiconductor structure is exposed to an etchant. The etchant is adapted to selectively remove the first material, leaving the second material substantially intact. After exposing the semiconductor structure to the etchant, it is detected whether the feature has been affected by the etchant.

Abstract: A food product comprises an oligosaccharide composition that is digestion resistant or slowly digestible. The oligosaccharide composition can be produced by a process that comprises producing an aqueous composition that comprises at least one oligosaccharide and at least one monosaccharide by saccharification of starch, membrane filtering the aqueous composition to form a monosaccharide-rich stream and an oligosaccharide-rich stream, and recovering the oligosaccharide-rich stream. Alternatively, the oligosaccharide composition can be produced by a process that comprises heating an aqueous feed composition that comprises at least one monosaccharide or linear saccharide oligomer, and that has a solids concentration of at least about 70% by weight, to a temperature of at least about 40° C.

Abstract: A method and apparatus is provided for processing tasks with failure recovery. The method includes storing one or more tasks in a queue, wherein each task has an associated exit routine, and determining at least one task to process based on a priority scheme. The method further includes processing the at least one task, and calling the exit routine based on determining that the task has not completed processing within a preselected period of time.

Abstract: In complex metallization systems of sophisticated semiconductor devices, appropriate stress compensation mechanisms may be implemented in order to reduce undue substrate deformation during the overall manufacturing process. For example, additional dielectric material and/or functional layers of one or more metallization layers may be provided with appropriate internal stress levels so as to maintain substrate warpage at a non-critical level, thereby substantially reducing yield losses in the manufacturing process caused by non-reliable attachment of substrates to substrate holders in process and transport tools.

Abstract: The present case relates to a process for the purification of lactide from a crude lactide vapor product stream which process comprises a rectification/condensation step leading to a lactide-enriched condensate.

Abstract: A method for determining parking assignments for material handling vehicles in a manufacturing system is provided. The manufacturing system is operable to perform fabrication processes on a plurality of loads. The method includes identifying at least one idle material handling vehicle. A first cost factor associated with expected transit times for the at least one idle material handling vehicle to available parking locations in the manufacturing system is determined. A second cost factor based on a number of loads available to be serviced by the at least one idle material handling vehicle in the parking locations and relative priorities assigned to the loads is determined. A parking location for the at least one idle material handling vehicles is determined based on the first and second cost factors. A parking request is issued to the at least one idle material handling vehicle based on the determined parking locations.

Abstract: A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior.

Abstract: The present invention provides a method and an apparatus for controlling service quality of data communications in a wireless network in which quality of service control for voice over internet protocol packets is provided on a downlink shared channel. A method is provided for a wireless communications between at least a first and a second service user. The method comprises prioritizing transmission of voice over internet protocol packets for the first and second service users over a shared downlink channel based on a first end-to-end delay that the first service user experiences relative to a second end-to-end delay that the second service user experiences. For example, such a priority adaptation may provide quality of service control for voice over internet protocol over a high-speed downlink packet access channel based on an end-to-end delay that a mobile-to-mobile user may be currently experiencing relative to a mobile-to-land user.