Patents Represented by Attorney Williams, Morgan and Amerson

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  • Transportable systems for treating drilling fluid
    Patent number: 8133164
    Abstract: A system for well fluid treatment, the system being transportable, the system including a base, a support structure on the base, a brace apparatus connected to the base and to the support structure for bracing the support structure during movement of the system, the brace apparatus releasably secured to the support structure and releasably secured to the base, at least one holding tank on the base for holding well fluid to be treated, from an active rig well fluid system and the well fluid to be treated including solids, centrifuge apparatus for centrifuging a mixture of well fluid and solids from the at least one holding tank, producing reusable fluid, a first pump apparatus for pumping well fluid and solids from the at least one holding tank to the centrifuge apparatus, and a centrifuge support on the base for supporting the centrifuge apparatus.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: March 13, 2012
    Assignee: National Oilwell Varco L.P.
    Inventors: Randy Charles Beebe, Donald Tracey Crosswhite, Larry Jona Kellert, James Joseph Tait, Dean Mitchell Bird
  • Method of determining characteristics of access classes in wireless communication systems
    Patent number: 8134953
    Abstract: The present invention provides a method of determining characteristics of access classes in a wireless communication system. In one embodiment, a method is provided for implementation in an access network of a wireless communication system. The method includes mapping, at the access network, a plurality of priority levels to a plurality of access classes. Each access class is associated with at least one parameter used by access terminals to establish a wireless communication link with the access network. The method also includes transmitting, from the access network to a first access terminal, information indicating the mapping of the plurality of priority levels to the plurality of access classes in response to receiving a request to establish a communication session between the first access terminal and the access network.
    Type: Grant
    Filed: August 29, 2007
    Date of Patent: March 13, 2012
    Assignee: Alcatel Lucent
    Inventors: Christopher F. Mooney, David A. Rossetti, Jialin Zou
  • System and method providing region-granular, hardware-controlled memory encryption
    Patent number: 8135962
    Abstract: A memory, system, and method for providing security for data stored within a memory and arranged within a plurality of memory regions. The method includes receiving an address within a selected memory region and using the address to access an encryption indicator. The encryption indicator indicates whether data stored in the selected memory page are encrypted. The method also includes receiving a block of data from the selected memory region and the encryption indicator and decrypting the block of data dependent upon the encryption indicator.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: March 13, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Geoffrey S. Strongin, Brian C. Barnes, Rodney Schmidt
  • Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode
    Patent number: 8129236
    Abstract: After forming the outer drain and source regions of an N-channel transistor, the spacer structure may be removed on the basis of an appropriately designed etch stop layer so that a rigid material layer may be positioned more closely to the gate electrode, thereby enhancing the overall strain-inducing mechanism during a subsequent anneal process in the presence of the material layer and providing an enhanced stress memorization technique (SMT). In some illustrative embodiments, a selective SMT approach may be provided.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: March 6, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Andreas Gehring, Anthony Mowry, Andy Wei
  • Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors
    Patent number: 8129276
    Abstract: In sophisticated semiconductor devices, a contact structure may be formed on the basis of a void positioned between closely spaced transistor elements wherein disadvantageous metal migration along the void may be suppressed by sealing the voids after etching a contact opening and prior to filling in the contact metal. Consequently, significant yield losses may be avoided in well-established dual stress liner approaches while, at the same time, superior device performance may be achieved.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: March 6, 2012
    Assignee: Globalfoundries Inc.
    Inventors: Ralf Richter, Kai Frohberg, Holger Schuehrer
  • Multi-level buffering of transactional data
    Patent number: 8127057
    Abstract: An apparatus, method, and system for implementing a hardware transactional memory (HTM) system with multiple levels of transactional buffers. The apparatus comprises a data cache configured to buffer data in a shared (by a plurality of processing cores) memory accessed by speculative memory access operations and to retain the data during at least a portion of an attempt to execute the atomic memory transaction. The apparatus also comprises an overflow detection circuit configured to detect an overflow condition upon determining that the data cache has insufficient capacity to buffer a portion of data accessed as part of the atomic memory transaction, as well as a buffering circuit configured to respond to the detection of the overflow condition by preventing the portion of data from being buffered in the data cache and buffering the portion of data in a secondary buffer separate from the data cache.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: February 28, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jaewoong Chung, David S. Christie, Michael P. Hohmuth, Stephan Diestelhorst, Martin Pohlack
  • Mapping control information to a dedicated physical control channel
    Patent number: 8125947
    Abstract: The present invention provides a method of wireless communication involving at least one mobile unit and at least one base station configured to transmit data over first and second data channels and corresponding first and second control channels. The method includes accessing control information associated with data to be transmitted over the first data channel and mapping the control information to a portion of the second control channel.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: February 28, 2012
    Assignee: Alcatel Lucent
    Inventors: Rainer Bachl, Jens Mueckenheim, Mirko Schacht
  • Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
    Patent number: 8124532
    Abstract: By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: February 28, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christof Streck, Volker Kahlert, Alexander Hanke
  • Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
    Patent number: 8124467
    Abstract: In sophisticated P-channel transistors, a high germanium concentration may be used in a silicon/germanium alloy, wherein an additional semiconductor cap layer may provide enhanced process conditions during the formation of a metal silicide. For example, a silicon layer may be formed on the silicon/germanium alloy, possibly including a further strain-inducing atomic species other than germanium, in order to provide a high strain component while also providing superior conditions during the silicidation process.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: February 28, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Stephan Kronholz, Vassilios Papageorgiou, Maciej Wiatr
  • Method and system for controlling transport sequencing in a process tool by a look-ahead mode
    Patent number: 8126588
    Abstract: By providing a look-ahead functionality for a tool internal substrate handling system of process tools on the basis of a process history, the tool internal substrate sequencing may be significantly enhanced. The look-ahead functionality enables a prediction of process time of substrates currently being processed in a respective process module, thereby enabling the initiation of transport activity for substrate load operations in order to significantly reduce the overall idle time of process modules occurring during substrate exchange.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: February 28, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kilian Schmidt, Matthias Becker
  • Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment
    Patent number: 8119461
    Abstract: By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectrics may be improved, thereby reducing negative bias temperature instability effects in highly scaled P-channel transistors.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: February 21, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Martin Trentzsch, Thorsten Kammler, Rolf Stephan
  • Technique for monitoring dynamic processes in metal lines of microstructures
    Patent number: 8118932
    Abstract: By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficiently monitored and/or modified. For instance, OBIRCH and SEI techniques may be used in combination with the automated data recording and manipulation, thereby providing an efficient means for in situ failure analysis, defect identification, for any dynamic degradation processes in interconnects and interlayer dielectrics.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: February 21, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Joerg Buschbeck, Eckhard Langer, Marco Grafe
  • Shale shakers with cartridge screen assemblies
    Patent number: 8118172
    Abstract: A screening apparatus for separating components of a material by vibratory separation which, in certain aspects, includes a vibratable box connected via vibration isolators within a container, the box including screening apparatus thereon or the vibratory separator having replaceable screening cartridges within a container. This abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure and is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 C.F.R. 1.72(b).
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: February 21, 2012
    Assignee: National Oilwell Varco L.P.
    Inventor: George Alexander Burnett
  • Method and apparatus for emergency call routing using an end node
    Patent number: 8116720
    Abstract: A method is provided for routing an emergency call. The method comprises receiving an emergency call and identifying an end node associated with the call. The end node may be a communications device involved in establishing the emergency call that is geographically near the originator of the emergency call. A look-up table is then accessed to identify the appropriate public safety answering point (PSAP) associated with the end node, and the emergency call is routed to the identified PSAP.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: February 14, 2012
    Assignee: Alcatel Lucent
    Inventors: Stuart O. Goldman, Douglas H. Rollender
  • Image preview
    Patent number: 8117548
    Abstract: A method, apparatus, and system are provided for displaying a graphical representation of at least a portion of a file by interfacing with a graphical interface relating to the file. A request for viewing a file content is received. A window for viewing a graphical representation of at least a portion of the content of a file is provided.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: February 14, 2012
    Assignee: Apple Inc.
    Inventor: Gene Z. Ragan
  • Method and semiconductor structure for monitoring etch characteristics during fabrication of vias of interconnect structures
    Patent number: 8114688
    Abstract: By forming a trench-like test opening above a respective test metal region during the etch process for forming via openings in a dielectric layer stack of sophisticated metallization structures of semiconductor devices, the difference in etch rate in the respective openings may be used for generating a corresponding variation of electrical characteristics of the test metal region. Consequently, by means of the electrical characteristics, respective variations of the etch process may be identified.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: February 14, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Matthias Lehr
  • Method for forming double gate and tri-gate transistors on a bulk substrate
    Patent number: 8114746
    Abstract: Three-dimensional transistor structures such as FinFETS and tri-gate transistors may be formed on the basis of an enhanced masking regime, thereby enabling the formation of drain and source areas, the fins and isolation structures in a self-aligned manner within a bulk semiconductor material. After defining the basic fin structures, highly efficient manufacturing techniques of planar transistor configurations may be used, thereby even further enhancing overall performance of the three-dimensional transistor configurations.
    Type: Grant
    Filed: May 28, 2009
    Date of Patent: February 14, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Andy Wei, Robert Mulfinger, Thilo Scheiper, Thorsten Kammler
  • Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device
    Patent number: 8110498
    Abstract: When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: February 7, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Matthias Schaller, Daniel Fischer, Susanne Leppack
  • Method of creating a strained channel region in a transistor by deep implantation of strain-inducing species below the channel region
    Patent number: 8110487
    Abstract: By incorporating a carbon species below the channel region of a P-channel transistor prior to the formation of the gate electrode structure, an efficient strain-inducing mechanism may provided, thereby enhancing performance of P-channel transistors. The position and size of the strain-inducing region may be determined on the basis of an implantation mask and respective implantation parameters, thereby providing a high degree of compatibility with conventional techniques, since the strain-inducing region may be incorporated at an early manufacturing stage, directly to respective “large area” contact elements.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: February 7, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Uwe Griebenow, Kai Frohberg, Christoph Schwan, Kerstin Ruttloff
  • Christmas tree with internally positioned flowmeter
    Patent number: 8104337
    Abstract: A measurement device is disclosed which includes a structure adapted to be removably coupled to a Christmas tree, a sleeve operatively coupled to the structure and a flowmeter positioned at least partially within the sleeve.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: January 31, 2012
    Assignee: FMC Technologies, Inc.
    Inventors: David Zollo, Andrew Beck, Sean Walters