Abstract: A processor supports a mode in which the default operand size is 32 bits, but which supports operand size overrides to 64 bits. Furthermore, the default operand size may automatically be overridden to 64 bits for instructions having an implicit stack pointer reference and for near branch instructions. The overriding of the default operand size may occur without requiring an operand size override encoding in these instructions. In one embodiment, the instruction set specifying the instructions may be a variable byte length instruction set (e.g. x86), and the operand size override encoding may be a prefix byte which increases the instruction length.

Abstract: A network switch, configured for performing layer 2 and layer 3 switching in an Ethernet (IEEE 802.3) network without blocking of incoming data packets, includes a network switch port having a filter (i.e., a packet classifier module) configured for evaluating an incoming data packet on an instantaneous basis. The filter performs simultaneous comparisons between the incoming data stream of the data packet and multiple templates configured for identifying respective data protocols. Each template is composed of a plurality of min terms, wherein each min term specifies a prescribed comparison operation within a selected data byte of the incoming data packet. The packet classifier includes a separate FIFO for storing the payload of the layer 2 data frame (e.g., the IP packet), and buffer read logic that enables the packet classifier to read selected portions of the payload as it is received by the network switch port.

Abstract: According to one exemplary embodiment, a method for determining a Weibull slope at a specified bias voltage comprises a step of performing a number of groups of failure tests on a test structure to determine a number of groups of test data, where each of the groups of failure tests is performed at a respective one of a number of test bias voltages, and where each group of failure tests corresponds to a respective group of test data. The test structure may be an array of MOS transistors, for example. The method further comprises utilizing the number of groups of test data to determine a scaling line. According to this exemplary embodiment, the method further comprises utilizing the scaling line to determine the Weibull slope at the specified bias voltage. The method may further comprise utilizing the Weibull slope to determine a lifetime of a semiconductor die.

Abstract: A lithography mask or reticle and method of making the same is disclosed wherein the fidelity of pattern transfers is enhanced by way of a reduction in the opportunity for contaminating particles to become wedged between the mask and a chuck upon which the mask may rest during semiconductor processing via electrostatic chucking, and also by facilitating heat dissipation within the mask via thermal conductance to mitigate warping of the mask. One or more thermally conductive pads formed within one or more layers applied to the mask facilitate the thermal conductance, and spaces or apertures formed within the layers reduce the potential for particle contamination.

Abstract: Gas-assisted etching (GAE) for integrated circuit dies is enhanced via a method and system that enable halide-assisted etching of dies having copper material. According to an example embodiment of the present invention, an integrated circuit die having copper is etched using a focused ion beam (FIB) and a halide etch gas, such as chlorine. A selected amount of oxygen-containing gas is supplied to the die to react with the halide and prevent the corrosion of exposed copper material in the die. In this manner, the benefits of halide-assisted etching are realized while inhibiting the corrosion of copper that typically occurs with integrated circuit dies having copper material.

Abstract: A semiconductor component having an optical interconnect formed thereover and a method for manufacturing the semiconductor component. The semiconductor component has a transistor coupled to a light emitting device and another transistor coupled to a light detecting device by a metallization system. The light emitting device is optically coupled to the light detecting device by an optical interconnect formed over the transistors and the metallization system.

Abstract: A copper line that is formed in a patterned dielectric layer has a copper/silicon film formed on a surface thereof to substantially suppress an electromigration path through this surface. In an in situ process, the exposed copper surface is first cleaned by a reactive plasma ambient including nitrogen and ammonia and after a certain clean period, a gaseous compound comprising silicon, for example silane, is added to the reactive plasma ambient to form the copper/silicon film. Additionally, a capping layer may be deposited, wherein due to the copper/silicon film, any deposition technique or even spin-coating may be used.

Abstract: A processor supports several operating modes. In at least one of the operating modes, a segmented address space is used. In at least one other operating mode, an unsegmented address space is used. In the unsegmented address space, a canonical check applies to addresses. In the segmented address space, a segment limit check applies. In some cases, both a segment limit check and a canonical check applies dependent on the segment used (e.g. either user or table segments). An exception circuit selects one or more of the canonical check result(s) and the segment limit check result to generate an exception indication. The selection is dependent on the operating mode and the segment of the data reference. The processor may also perform selective truncation of addresses based on the operating mode and the segment.

Abstract: A memory system having a memory cell subject to read and write operations with shadow circuitry including a shadow cell configured to parallel operation of the memory cell. A wordline is connected to the memory cell and bitlines are connected to the memory cell and the shadow cell. Sense circuitry is connected to the bitlines for receiving data from the memory cell. An interlock cell is connected to the sense circuitry and the shadow cell to determine an occurrence of a non-redundant write operation, to provide the non-redundant write operation to the shadow cell, and to have the shadow cell prepare the bitlines for a read operation upon completion of the non-redundant write operation.

Abstract: An insulated gate semiconductor device (100) having reduced gate resistance and a method for manufacturing the semiconductor device (100). A gate structure (112) is formed on a major surface (104) of a semiconductor substrate (102). Successive nitride spacers (118, 128) are formed adjacent the sidewalls of the gate structure (112). The nitride spacers (118, 128) are etched and recessed using a single etch to expose the upper portions (115A, 117A) of the gate structure (112). Source (132) and drain (134) regions are formed in the semiconductor substrate (102). Silicide regions (140, 142, 144) are formed on the top surface (109) and the exposed upper portions (115A, 117A) of the gate structure (112) and the source region (132) and the drain region (134). Electrodes (150, 152, 154) are formed in contact with the silicide (140, 142, 144) of the respective gate structure (112), source region (132), and the drain region (134).

Abstract: A network switch includes network switch ports, and switching logic for determining the output port for each received layer 2 type data packet. The switching logic includes an address table configured for storing address-based switching decisions, a trunk table configured for assigning each network switch port to a corresponding identified trunk, and a trunk distribution table identifying the network switch ports assigned to each identified trunk. The switching logic determines the output port for each corresponding received layer 2 type data packet based on a corresponding switching decision for the received layer 2 type data packet, and based on selection of an entry in the trunk distribution table based on information within the received layer 2 type data packet. Hence, the network switch is able to perform trunk-based switching with minimal complexity, ensuring switching of data packets at the wire rate.

Abstract: A processor, apparatus and method for storing segment descriptors of different sizes in a segment descriptor table are disclosed. Smaller segment descriptors may be segment descriptors similar to the x86 architecture definition, and larger segment descriptors may be used to provide virtual addresses (e.g. base addresses or offsets) having more the 32 bits. By providing a segment descriptor table that stores different sized segment descriptors, maintaining multiple segment descriptor tables for different operating modes may be avoidable while providing support for segment descriptors having addresses greater than 32 bits. In one embodiment, the larger segment descriptors may be twice the size of the smaller segment descriptors. The segment descriptor table may comprise entries, each capable of storing the smaller segment descriptor, and a larger segment descriptor may occupy two entries of the table.

Abstract: The present invention allows the manufacturing of field effect transistors with reduced thermal budget. A first amorphized region and a second amorphized region are formed in a substrate adjacent to the gate electrode by implanting ions of a non-doping element, the presence of which does not significantly alter the conductive properties of the substrate. The formation of the amorphized regions may be performed before or after the formation of a source region, a drain region, an extended source region and an extended drain region. The substrate is annealed to achieve solid phase epitaxial regrowth of the amorphized regions and to activate dopants in the source region, the drain region, the extended source region and the extended drain region.

Abstract: A method and system for providing a semiconductor device are described. The method and system include providing a plurality of gate stacks and a first source drain halo implant. The first source and drain halo implant uses the plurality of gate stacks as a mask. The method and system also include providing a lightly doped source and drain implant and a N+ source and drain implant. The source connection implant is for connecting a portion of the plurality of sources. The second source and drain implant uses the plurality of gate stacks as a mask. Moreover, CoSi formed on the source region provides a lower resistence for lines connecting the sources, allowing a lower dose to be used for the N+ source and drain implant.

Abstract: A network interface examines a field of a successfully transmitted frame following a contention resolution and transmission ordering among a plurality of nodes contending for transmission of a frame. The field indicates whether the successfully transmitting node has any additional frames to transmit. The number of backoff slots is maintained at a current value, rather than decremented, if the field indicates that the successfully transmitting node has an additional frame to transmit. The next frame to be transmitted is assigned the highest backoff slot. This procedure avoids re-contention and re-ordering when the contending nodes have additional frames to transmit, thereby improving overall network performance.

Abstract: A computer system I/O node. An input/output node for a computer system includes a first receiver unit configured to receive a first command on a first communication path and a first transmitter unit coupled to transmit a first corresponding command that corresponds to the first command on a second communication path. The input/output node also includes a second receiver unit configured to receive a second command on a third communication path and a second transmitter unit coupled to transmit a second corresponding command that corresponds to the second command on a fourth communication path. Further, the input/output node includes a bridge unit coupled to receive selected commands from the first receiver and the second receiver and configured to transmit commands corresponding to the selected commands upon a peripheral bus.

Abstract: The invention provides an improved well structure for electrically separating n-channel and p-channel MOSFETs. The invention first forms a shallow well in a substrate. A buried amorphous layer is then formed below the shallow well. A deep well is then formed below the buried amorphous layer. The substrate is then subjected to a rapid thermal anneal to recrystallize the buried amorphous layer. The well structure is formed by the shallow well and the deep well. A conventional semiconductor device may then be formed above the well structure. The buried amorphous layer suppresses the channeling effect during the forming of the deep well without requiring a tilt angle.

Abstract: A semiconductor structure includes a fin and a layer formed on the fin. The fin includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer is formed on the surfaces and includes a second crystalline material. The first crystalline material has a different lattice constant than the second crystalline material to induce tensile strain within the first layer.

Abstract: A multiport switching device includes an Internal Rules Checker (IRC) that determines forwarding information for packets received at the device. The IRC uses an internal address lookup table to determine the forwarding information when the received packet conforms to version four of the Internet Protocol (IPv4). When the received packet has a longer destination address, consistent with version six of the Internet Protocol (IPv6), the IRC uses an externally located CPU to assist the IRC in determining the forwarding information.

Abstract: A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at least some pinholes that are present in the lowermost PECVD layer are closed by upper PECVD layers and therefore do not extend through all of the PECVD layers. As a result the upper surface of the uppermost PECVD layer has a lower pinhole density than the lower PECVD layer. This reduces photoresist poisoning by dopant in the amorphous carbon layer, and etching of the amorphous carbon layer by photoresist stripping chemistry.