Abstract: A technique for measuring peak voltages is provided that may be used in RF transceivers or receivers of wireless local area network systems. In an apparatus for measuring a peak value of an analog voltage, an analog to digital converter is connected to receive an input voltage. A voltage level detection unit detects a voltage level of a received input voltage, and a digital memory receives and stores the detected voltage level. The digital memory updates the stored voltage level only if the currently detected voltage level is higher, or lower, than the stored level. A digital code is output that corresponds to the stored voltage level. The provided technique may allow for a more simple and less complex implementation.

Abstract: The electromigration resistance of Cu lines is significantly improved by depositing a low-k capping layer thereon, e.g., a silicon carbide capping layer having a dielectric constant of about 4.5 to about 5.5. Embodiments include sequentially treating the exposed planarized surface of inlaid Cu with a plasma containing NH3 diluted with N2, discontinuing the plasma and flow of NH3 and N2, pumping out the chamber; introducing trimethylsilane, NH3 and He, initiating PECVD to deposit the silicon carbide capping layer, as at a thickness of about 200 Å to about 800 Å. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.

Abstract: A method is presented for compensating for the effects of charge neutralization in calculating the ‘true’ ion dose, i.e., the dose assuming no changes of charge state of ions during an implantation process. An ion beam is generated under normal operating conditions, e.g., stable vacuum exists, and no target is being implanted. At least one additional detector would be positioned in the target chamber, and a dose measurement conducted simultaneously with a measurement of the beam current with the Faraday, which is located outside of the charge neutralization region, to establish a reference ratio. A wafer is then placed at the target location, and simultaneous measurements made with the additional detector and Faraday, as before, to determine the ratio between the beam current and the detector during wafer implantation. Any drift from the reference ratio indicates the dose error due to charge neutralization from wafer outgassing during implantation.

Abstract: Aspects for increasing accuracy in predicting HCI degradation in semiconductor devices are described. The aspects include a gated ring oscillator structure utilized to perform HCI degradation testing with controlling of the gated ring oscillator structure to isolate voltage acceleration degradation from frequency degradation directly during the HCI degradation testing. Further included is a plurality of ring oscillators coupled in series, and first and second control logic for the plurality of ring oscillators for enabling selection of gated operation of the plurality of ring oscillators, wherein each ring oscillator performs a same number of transitions to allow an accurate assessment of HCI degradation based solely on voltage acceleration.

Abstract: Various methods of controlling conformal film deposition processes, and a system for accomplishing same are disclosed. In one embodiment, the method comprises forming a plurality of features above a semiconducting substrate, determining at least one of a critical dimension and a cross-sectional profile of at least one of the plurality of features, determining a thickness for a layer of material to be conformally deposited around the plurality of features based upon at least one of the determined critical dimension and cross-sectional profile and depositing the layer of material around the plurality of features to the determined thickness.

Abstract: A computer system has multiple performance states. The computer system periodically determines if the software power state maintained by power management software that represents the power state of the processor or other computer system component matches the actual power state of the processor or other computer system component. If not, the actual power state and the software power state are resynchronized, for example, by reinitializing the power management software or otherwise causing the software power state to match the hardware power state.

Abstract: One aspect of the present invention relates to a system for determining and controlling a microloading effect in order to achieve desired feature depth on a wafer. The system includes a semiconductor structure having one or more layers formed over a substrate, a fabrication process assembly for forming features on the semiconductor structure, a microloading characterization system for monitoring the fabrication process, measuring feature depth, and for processing the measurements in order to ascertain the microloading effect, a detection apparatus operatively coupled to the microloading characterization system to facilitate monitoring the fabrication process and measuring feature depth, and a control system for regulating the fabrication process based on the output from the microloading characterization system.

Abstract: In order to maintain a semiconductor device under test at a generally constant temperature, the temperature change of the device under test is characterized as the device under test undergoes changes in power level in response to an electrical testing sequence. Additionally, the temperature change of the device under test is characterized in response to changes in power level of a thermal head associated with the device under test. This information is used to select power levels of the thermal head during the electrical testing sequence so that the device under test remains at a substantially constant temperature during the electrical testing sequence.

Abstract: A method is provided, the method including forming a gate dielectric layer above a substrate layer and forming a gate conductor layer above the gate dielectric layer. The method also includes forming an inorganic bottom anti-reflective coating layer above the gate conductor layer and treating the inorganic bottom anti-reflective coating layer with an oxidizing treatment during a rapid thermal anneal process.

Abstract: A method of detecting a charge stored on a charge storage region of a first dual bit dielectric memory cell within an array of dual bit dielectric memory cells comprises applying a source voltage to a first bit line that is the source of the selected memory cell and applying a drain voltage to a second bit line that forms a drain junction with the channel region. The source voltage may be a small positive voltage and the drain voltage may be greater than the source voltage. A read voltage is applied to a selected one of the word lines that forms a gate over the charge storage region and a bias voltage is applied to non-selected word lines in the array. The bias voltage may be a negative voltage.

Abstract: An apparatus for providing a high speed asynchronous bus for a plurality of modules of an integrated circuit is disclosed. Each of the modules may comprise one or more clock domains. The apparatus comprises a distributed AND structure capable of receiving a data strobe signal and a data signal from each of the plurality of modules. A method for sampling data from the high speed asynchronous bus is also disclosed. Data is sampled when a sampling criterion has occurred. The sampling criterion is based upon detecting changes in a data strobe signal or in a delayed data strobe signal.

Abstract: A system for programming a charge stored on a charge storage region of a dielectric charge trapping layer of a first dual bit dielectric memory cell within an array of dual bit dielectric memory cells comprises applying a positive source programming bias to a first bit line that is the source of the selected memory cell while applying a drain programming voltage to a second bit line that forms a drain junction with the channel region and while applying a positive voltage to a selected word line. The source voltage may be applied by coupling the source bit line to a voltage divider or by coupling the source bit line to a resistor which in turn is coupled to a ground. A negative programming bias may also be applied to the substrate and to unselected word lines.

Abstract: A method for asymmetric spacer formation integratable into a manufacturing process for integrated circuit semiconductor devices is presented. The method comprises forming a gate structure over a substrate, and forming a sidewall layer overlying the gate structure and substrate, wherein the sidewall layer comprises a first portion overlying a first sidewall of the gate structure. A photoresist structure is formed adjacent to the first portion, and subjected to an ion beam. The photoresist structure serves to shield at least part of the first portion from the ion beam. During irradiation, the wafer is oriented such that a non-orthogonal tilt angle exists between a path of the ion beam and a surface of the first sidewall. Formation of asymmetric spacers is possible because radiation damage to unshielded sidewall portions permits subsequent etches to proceed at a faster rate.

Abstract: The degradation of deposited low dielectric constant interlayer dielectrics and gap fill layers, such as HSQ layers, during formation of contacts/vias is significantly reduced or prevented by employing a plasma containing CF4+H2O to remove the photoresist mask and cleaning the contact/via opening after anisotropic etching. The CF4+H2O plasma also enables rapid photoresist stripping at a rate of about 10 to about 20 KÅ/min. Embodiments include photoresist stripping and cleaning the contact/via opening with a CF4+H2O plasma to prevent reduction of the number of Si—H bonds of an as-deposited HSQ layer below about 70%.

Abstract: A scatterometer system comprises a pitch calibration station that allows the monitoring of a tool status of the scatterometry system without involving a user's interaction. The pitch calibration station comprises a pitch calibration standard, for example in the form of a grid pattern that may conveniently be evaluated on the basis of a reference data library. By providing the pitch calibration station, the measurement process may easily be adapted to include reference measurements on a regular basis so as to increase the reliability of measurement values obtained by scatterometry. In one particular example, a corresponding set of instructions for performing the calibration measurement may be implemented into a self-test routine of the scatterometry system.

Abstract: The present invention relates to a memory array comprising a substrate and a plurality of bitlines having contacts and a plurality of wordlines intersecting the bitlines. A protective spacer is used to separate the bitline contacts from the wordlines adjacent to the bitline contacts to prevent damage caused during the formation of the bitline contacts. The present invention also relates to a method of forming the memory array.

Abstract: A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The liner for the trench is formed from a semiconductor or metal layer which is deposited in a low temperature process which reduces germanium outgassing. The low temperature process can be a CVD process.

Abstract: The source resistance of a MOSFET is determined by grounding the source and applying a voltage to the substrate to force a current Isub-S through the source. The gate and drain are allowed to float while the current is forced. Since no current flows between the source and drain, a voltage VDS detected at the drain is the product of the forced current Isub-S and the source resistance RS. Accordingly, the source resistance RS is determined to be the drain voltage VDS divided by the forced current Isub-S. Drain resistance RD may be measured in an analogous manner.

Abstract: An I/O node for a computer system including an integrated graphics engine. An input/output node is implemented upon an integrated circuit chip. The I/O node includes a first transceiver unit, a second transceiver unit, a packet tunnel, a graphics engine and a graphics interface. The first transceiver unit may receive and transmit packet transactions on a first link of a packet bus and the second transceiver unit may receive and transmit packet transactions on a second link. The packet tunnel may convey selected packet transactions between the first and the second transceiver unit. The graphics engine may receive graphics packet transactions from the first transceiver unit and may render digital image information in response to receiving the graphics transactions. The graphics interface may receive additional graphics packet transactions from the first transceiver unit and may translate the additional graphics packet transactions into transactions suitable for transmission upon a graphics bus.

Abstract: The invention provides a method of small geometry gate formation on the surface of a high-K gate dielectric. The method provides for processing steps that include gate pattern trimming, gate stack etch, and removal of exposed regions of the high-K dielectric to be performed efficiently in a single etch chamber. As such, process complexity and processing costs are reduced while throughput and overall process efficiency is improved. The method includes fabricating a high-K gate dielectric etch stop dielectric layer on the surface of a silicon substrate to protect the silicon substrate from erosion during an etch step and to prove a gate dielectric. A polysilicon layer is fabricated above the high-K dielectric layer. An anti-reflective coating layer above the polysilicon layer, and a mask is fabricated above the anti-reflective coating layer to define a gate region and an erosion region.