Abstract: A PLL frequency synthesizer able to automatically set an appropriate operating mode of the voltage controlled oscillator is provided. The voltage controlled oscillator is operable in a plurality of operating modes each defining a different operating frequency range of the voltage controlled oscillator. The appropriate operating mode is selected based on an error signal detected by a phase/frequency detector of the PLL frequency synthesizer. A window comparator is used for switching to adjacent operating modes if the error signal exceeds or falls below predefined upper and lower error voltage limits.

Abstract: The present invention is generally directed to various methods of correcting non-linearity in metrology tools, and a system for performing same. In one illustrative embodiment, the method comprises creating a non-linear model of measurement data produced by a metrology tool when measuring a plurality of features, each of which has a different, known feature size, measuring a production feature using the metrology tool to produce metrology data for the production feature, determining a correction factor to be applied to the metrology data for the production feature by comparing the non-linear model to a linear model, and applying the determined correction factor to the metrology data for the production feature.

Abstract: A system and method for synchronizing the skip pattern to two clock domains and initializing the clock skipping buffer which enables data transfers between the two clock domains. In one embodiment, a circuit comprises a pair of alignment detection units, a synchronous reset unit, a skip pattern generator, a counter reset unit and a data transfer buffer. Each of the alignment units is configured to detect the alignment of the clock signal in one of the clock domains with a reference clock signal and generate a signal indicative of the alignment. This signal is conveyed to the synchronous reset unit and the counter reset unit. The alignment signal generated by one alignment unit is also conveyed to the skip pattern generator. The synchronous reset unit accepts the alignment signals from the alignment units and generates concurrent reset signals (i.e., one for each of the two clock domains) to initialize the counter reset unit.

Abstract: Disclosed herein are a method and apparatus to provide a deterministic power-on voltage in a system having a processor-controlled voltage level. In one embodiment, the system includes a DC/DC converter, a processor, and a selection circuit. The DC/DC converter receives a voltage setting signal or signals from the selection circuit and provides an adjustable power output signal having a voltage indicated by the voltage setting signal. The processor is powered by the adjustable power output signal. When powered, the processor provides a programmable voltage setting signal or signals. The selection circuit receives the programmable voltage setting signal or signals, a hardwired voltage setting signal, and a selection signal or signals, and when the selection signal is in a predetermined condition, the selection circuit provides the programmable voltage setting signal or signals from the processor to the DC/DC converter.

Abstract: A computer system has a communication link that includes a control signal and data lines. A first control packet having a-plurality of bytes is transferred over the data lines from a first to a second node on the communication link. The control line is asserted to indicate transfer of a control packet. After transfer of the first control packet, a first portion of a multi-byte data packet associated with the first control packet is transferred with the control line deasserted. During transfer of the data packet the control line is asserted and transfer of the data packet is suspended. A second control packet is then transferred over the data lines. Subsequent to transferring the second control packet, the remainder of the data packet is transferred with the control line deasserted.

Abstract: In one illustrative embodiment, a system is comprised of a semiconductor processing tool, an etcher, a metrology tool, and a controller. The semiconductor processing tool is capable of forming a process layer above a semiconducting substrate. The etcher is capable of removing at least a portion of the process layer. The metrology tool is capable of measuring a first depth of the etch at a first location in a first preselected region of the semiconducting substrate. The controller is capable of comparing the first depth to a desired depth, and varying the temperature of a subsequently processed semiconducting substrate in a region corresponding to the first preselected region in response to the first depth being different from the desired depth.

Abstract: One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response.

Abstract: Disclosed are methods of processing a semiconductor structure, involving the steps of depositing a light-degradable surface coupling agent on a semiconductor substrate; depositing a resist over the light-degradable surface coupling agent; irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes; and developing the resist.

Abstract: An organic memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.

Abstract: A method for improving the channel doping profile of deep-submicron field effect transistors and MOSFETs. The method involves a highly localized halo implant formed in the channel region but not in the source/drain junction. The halo implant is performed through a gap formed by removal of a temporary spacer. The MOSFET is then further completed.

Abstract: A memory circuit for programming a target cell is disclosed. According to one embodiment, the memory circuit comprises the target cell having a drain terminal connected to a bit line. A drain voltage is coupled to the bit line and supplies a voltage greater than a ground voltage, while a gate voltage is coupled to a gate terminal of the target cell and supplies a voltage greater the ground voltage. A source voltage is coupled to a source terminal of the target cell and supplies a voltage less than the ground voltage, and a substrate voltage is coupled to a substrate of the target cell and supplies a voltage less than the ground voltage.

Abstract: In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.

Abstract: Semiconductor devices with reduced NiSi/Si interface contact resistance are fabricated by forming preamorphized regions in a substrate at a depth overlapping the subsequently formed NiSi/Si interface, ion implanting impurities to form deep source/drain implants overlapping the preamorphized regions deeper in the substrate and laser thermal annealing to activate the deep source/drain regions. Nickel silicide layers are then formed in a main surface of the substrate and on the gate electrode. Embodiments include forming deep source/drain regions with an activated impurity concentration of 1×1020 to 1×1021 atoms/cm3 at the NiSi/Si interface.

Abstract: A command storage technique that fulfils ordering rules is provided. This technique may be used in HyperTransport compliant southbridge devices. A command transmit engine comprises a command storage unit that is adapted to receive incoming commands of different command types and store the command in the order in which the commands were received. The command transmit engine further comprises an ordering rule controller that is connected to the command storage unit to select stored commands to be transmitted. The ordering rule controller is adapted to perform the selection according to predefined command ordering rules. The command ordering rules are command type dependent.

Abstract: A network switch, configured for performing layer 2 and layer 3 switching in an Ethernet (IEEE 802.3) network without blocking of incoming data packets, includes a network switch port having a filter (i.e., a packet classifier module) configured for evaluating an incoming data packet on an instantaneous basis. The filter performs simultaneous comparisons between the incoming data stream of the data packet and multiple templates configured for identifying respective data protocols. Each template is composed of a plurality of min terms, wherein each min term specifies a prescribed comparison operation within a selected data byte of the incoming data packet. The templates may be programmed by a user and stored in an internal min term memory. Moreover, the multiple simultaneous comparisons enable the network switch to perform layer 3 switching for 100 Mbps and gigabit networks without blocking in the network switch.

Abstract: The adhesion of a capping layer, e.g., silicon nitride, to inlaid Cu is improved with an attendant reduction in hillock formation and, hence, improvement in electromigration resistance, by laser thermal annealing the exposed surface of the inlaid Cu after CMP to remove copper oxide therefrom. Embodiments include laser thermal annealing in NH3 or H2 at a temperature of about 370° to about 420° for a short period of time, e.g., about 10 to about 100 nanoseconds, to remove the copper oxide. Embodiments also include sequentially and contiguously laser thermal annealing the exposed planarized surface of inlaid Cu, ramping up the introduction of SiH4 and then initiating (PECVD) of a silicon nitride capping layer. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.

Abstract: The present invention is a method for fabricating nitride memory cells using a floating gate fabrication process. In one embodiment of the present invention, the fabrication process of a floating gate memory cell is accessed. The floating gate memory cell fabrication process is then altered to produce an altered floating gate memory cell fabrication process. The altered floating gate memory cell fabrication process is then used to form a nitride memory cell.

Abstract: Micro-miniaturized semiconductor devices having transistors with abrupt high concentration shallow source/drain extensions are fabricated by sequentially forming deep source/drain regions, pre-amorphizing intended shallow source/drain extension regions, ion implanting impurities into the pre-amorphized regions and then laser thermal annealing to crystallize the pre-amorphized regions and to activate the source/drain extensions. Embodiments include forming the deep source/drain regions using removable sidewall spacers on the gate electrode, removing the sidewall spacers, forming the ion implanted pre-amorphized source/drain exension implants, forming laser transparent oxide sidewall spacers on the gate electrode and laser thermal annealing through the oxide laser transparent sidewall spacers to selectively activate the source/drain extensions.

Abstract: A core memory array having a plurality of charge trapping dielectric memory devices. The core memory array can include a substrate having a first semiconductor bit line and a second semiconductor bit line formed therein and a body region interposed between the first and the second bit lines. Over the body region can be formed a first dielectric layer disposed, a dielectric charge trapping layer and a second dielectric layer. At least one word line can be disposed over the second dielectric layer, which defines a channel within the body region. Each bit line can include a bit line contact assembly having a locally metalized portion of the bit line and a conductive via traversing a dielectric region.

Abstract: In a non-volatile SONOS-type memory device having a charge storing layer disposed between top and bottom dielectric layers, a method of programming the memory device includes selectively storing charge in an upper portion of the charge storing layer. The method includes performing a channel hot electron injection procedure followed by a soft erase operation in which charge within a bottom portion of the first charging cell is removed. A verification procedure is performed to determine whether at least one charge storing cell is in a programmed state. The method provides a programmed cell in which the stored charge is disposed adjacent an upper portion of the cell near the top dielectric.