Abstract: An indirect branch predictor includes a buffer storing branch target addresses corresponding to previously executed indirect branch instructions. The buffer is indexed with an index derived from history information corresponding to previously predicted indirect branch instructions and from the PC of the particular indirect branch instruction being predicted. In one embodiment, the buffer may be tagless and/or direct mapped. In various embodiments, the indirect branch target predictor may generate the index to the buffer using one or more techniques to improve the accuracy of the prediction: (i) offsetting the history information from the various previously predicted indirect branch instructions; (ii) weighting the history information based on the age of the previously predicted indirect branch instructions; and/or (iii) reversing the bit order of the PC of the particular indirect branch instruction being predicted.

Abstract: A semiconductor structure that includes an electrically conductive probe that extends from the back side of an integrated circuit to a selected region within the substrate. The structure includes a substrate having first and second surfaces. An active region is disposed in the substrate, and an electrically conductive probe extends from the first surface of the substrate to the active region. Probes can also be constructed to connect one to another and with well regions within the substrate.

Abstract: A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica or copper, which provide a high degree of surface coverage onto the reactive species, thereby occupying potential reaction sites, and which are sized to sterically hinder the collisions between two reactant molecules which result in new bond formation. The organic additive-containing slurry cain be utilized throughout the entire polish time. Alternatively, a slurry not containing the organic additive can be utilized for a first portion of the polish, and a slurry containing the organic additive or a polishing solution containing the organic additive can be utilized for a second portion of the polish.

Abstract: A method of manufacturing a MOSFET semiconductor device comprises providing a gate electrode having first and second opposing sidewalls over a substrate having source/drain regions; providing a gate oxide between the gate electrode and the substrate; forming first and second sidewall spacers respectively disposed adjacent the first and second sidewalls; pre-cleaning the sidewall spacers; forming a nickel layer; and forming nickel silicide layers disposed on the source/drain regions and the gate electrode. The nickel silicide layers are formed during a rapid thermal anneal at temperatures from about 380 to 600° C. The pre-clean uses a hydrogen reactive system in an atmosphere comprising hydrogen and helium. Also, the pre-clean and the formation of the nickel layer are sequentially performed in a single physical vapor deposition chamber system.

Abstract: A method of forming source/drain regions in a semiconductor device is provided. In one illustrative embodiment, the method comprises forming a gate electrode above a semiconducting substrate, forming source/drain regions in the substrate adjacent the gate electrode by performing at least the following steps: performing two ion implantation processes to form source/drain extensions for the device and performing a third ion implantation process to further form source/drain regions for the device. Various N-type and P-type dopant atoms such as arsenic, phosphorous, boron and boron difluoride may be used with the present invention.

Abstract: A method for controlling a process includes processing a first workpiece in a first process tool. An output characteristic of the first workpiece is measured. A second workpiece is processed in the first process tool. A tool health metric is determined for the first process tool corresponding to the processing of the second workpiece. A control action is determined based on the measured output characteristic and the tool health metric.

Abstract: A method and apparatus for buffering data samples in a software-based ADSL modem. The method includes generating data for transmission to a remote source and modulating the data to form a plurality of data symbols for transmission. The data symbols are stored in a buffer. An absence of a data symbol in the buffer is determined. In response to detecting an absence of a data symbol in the buffer, an idle data symbol is transmitted.

Abstract: A method comprises a “two-step” formation of a front side substrate contact in an FET formed over a buried insulator layer on a substrate, thereby avoiding the difficulties and problems involved in etching openings of high aspect ratio through a stack of different materials, as in a conventional front side substrate contact opening.

Abstract: A method of manufacturing an integrated circuit includes a semiconductor substrate having bitlines under a charge-trapping material over a core region and a gate insulator material over a periphery region. A wordline-gate material, a hard mask, and a first photoresist are deposited and patterned over the core region while covering the periphery region. After removing the first photoresist, wordlines are formed from the wordline-gate material in the core region. An anti-reflective coating and a second photoresist are deposited and patterned over the periphery region and covering the core region. The anti-reflective coating is removable without damaging the charge-trapping material. After removing the second photoresist and the anti-reflective coating, gates are formed from the wordline-gate material in the periphery region and the integrated circuit completed.

Abstract: A novel method of providing an external host processor with access to registers located in different clock domains. The method comprises the steps of translating host processor interface signals into internal register interface signals, and performing handshaking with the registers via the internal register interface. The handshaking includes supplying registers with a register access signal for enabling access to a selected register, and producing a register ready signal in response to the register access signal. Synchronization signals delayed with respect to the register ready signal may be used for synchronizing registers located in different clock domains with the processor interface.

Abstract: A thermal protection circuit for high output power supplies. A power supply circuit includes a switching control circuit coupled to a switching regulator circuit. The switching control circuit is configured to generate a plurality of switching control signals for controlling the switching regulator circuit. The power supply circuit also includes a temperature sensitive circuit which includes a thermistor. The temperature sensitive circuit is configured to provide a variable voltage level output to the phase control circuit. The switching control circuit is also configured to suspend operation of the switching regulator circuit upon detecting a predetermined voltage level at the output.

Abstract: An indirect branch predictor includes a buffer storing branch target addresses corresponding to previously executed indirect branch instructions. The buffer is indexed with an index derived from history information corresponding to previously predicted indirect branch instructions and from the PC of the particular indirect branch instruction being predicted. In one embodiment, the buffer may be tagless and/or direct mapped. In various embodiments, the indirect branch target predictor may generate the index to the buffer using one or more techniques to improve the accuracy of the prediction: (i) offsetting the history information from the various previously predicted indirect branch instructions; (ii) weighting the history information based on the age of the previously predicted indirect branch instructions; and/or (iii) reversing the bit order of the PC of the particular indirect branch instruction being predicted.

Abstract: A device and method for making a semiconductor-on-insulator (SOI) structure having a leaky, thermally conductive material (LTCIM) layer disposed between a semiconductor substrate and a semiconductor layer.

Abstract: A method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu—Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a reduced-oxygen Cu—Zn alloy as fill (30) for the via (6) in forming the dual-inlaid interconnect structure (35). The alloy fill (30) is formed by electroplating the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the fill (30) on the Cu surface (20); and annealing the electroplated Cu—Zn alloy fill (30); and planarizing the Cu—Zn alloy fill (30), thereby forming the dual-inlaid copper interconnect line (35).

Abstract: The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology data is performed. At least one modified manufacturing parameter is calculated based upon the scatterometry overlay analysis.

Abstract: A self-aligned transistor and method making a self-aligned transistor, the transistor including a first silicon portion on an isolation layer, the silicon portion having formed therein a source region and a drain region separated by a channel region. The channel region has a first side and a second side and a top portion, and a gate oxide surrounds the channel on said first side, second side and top portion. A first, a second and a third silicon gate regions are positioned in a second silicon portion surrounding the first silicon portion about the first side, second side and top portion and the channel region.

Abstract: The electromigration resistance of planarized metallization patterns, for example copper, inlaid in the surface of a layer of dielectric material, is enhanced by a process comprising blanket-depositing on the planarized, upper surfaces of the metallization features and the dielectric layer at least one alloying layer comprising at least one alloying element for the metal of the features, and diffusing the at least one alloying element within the metallization features to effect alloying therewith. The at least one alloying element diffused within the metallization features, under conditions wherein an oxide layer forms on the surface of the metallization features, forms a stable oxide layer on the surface of the metallization features. The stable oxide layer reduces electromigration from the metallization features along the oxide layer.

Abstract: One aspect of the invention relates to a virtual ground array floating gate flash memory device with salicided buried bit lines. The bit lines are implanted and salicided after formation of memory cell stacks, but before formation of word lines. The salicide can form over control gates for the memory cells and can contact a third poly layer from which the word lines are patterned. According to another aspect of the invention, an interpoly dielectric coats the sides of the floating gates and significantly improves the capacitance between the floating gate and the memory cell channel. The present invention provides very compact and reliable non-volatile memory.

Abstract: A flash memory structure and its fabrication process, whereby stacks, of a first poly-crystalline silicon material or an amorphous silicon material (polysilicon), are processed for formation of a pre-interpoly dielectric treatment layer over the first polysilicon material. The pre-interpoly dielectric treatment layer being a solid material formed by a chemical reaction formed for purposes of improving the reliability of an interpoly dielectric member and results in changing the capacitor coupling ratio of the flash memory element and allows the use of new power supply and programming voltages. The pre-interpoly dielectric treatment layer is formed by exposing the polysilicon stacks to a selected one of at least three ambient reagent gases. The selected gaseous ambient and exposure of the polysilicon stacks being performed in a fabrication tool such as a batch furnace, a single wafer rapid thermal anneal tool, or a plasma chamber.

Abstract: The invention relates generally to radix-r FFTs (Fast Fourier Transforms), and more particularly to a method and an apparatus for assigning data samples to memory when computing a radix-r FFT. In one embodiment, the apparatus comprises a plurality of memory banks for storing the data samples, a memory bank counter indicating the memory banks, a data sample counter for counting an increment of the data samples, a region difference counter for counting a region difference change of a butterfly stage, a computer program having the current values of the data sample counter and the region difference counter as input values for determining whether the fractional part of the current data sample value divided by the current region difference value equals zero, and a multiplexer for multiplexing the current data sample to an assigned memory bank if the fractional part is not equal zero.